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5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN
SWITCHING REGULATOR WITH 10 μA QUIESCENT CURRENT © SII Semiconductor Corporation, 2017 Rev.1.0_00 The S-85V1A Series is a step-down switching regulator whic h features high efficiency and fast transient response. Since PWM / PFM switching control automatically switches to PFM control when under light load, high efficiency is realized. This IC is suitable for mobile devices and battery powered devices due to introduction of own distinctive COT (Constant On-Time) control. Also, high-density mounting is realized by adopting super-s mall, thin SNT-6A package. Therefore, the occupancy area including a coil, an input capacitor and an output capacitor can be reduced to 2.0 mm × 4.5 mm = 9.0 mm 2, and it contributes to miniaturizatio n of electronic equipment. Features Applications
- Current consumption: 10 μA quiescent current • Bluetooth device
- Efficiency: 93% • Wireless sensor network device
- Fast transient response: COT control • Healthcare equipment
- Input voltage: 2.2 V to 5.5 V • Smart meter
- Output voltage: 0.7 V to 2.5 V, in 0.05 V step • Portable game device 2.6 V to 3.9 V, in 0.1 V step • Remote control
- Output voltage accuracy: ±1.5% (1.0 V ≤ VOUT ≤ 3.9 V) Package
- SNT-6A (1.80 mm × 1.57 mm × t0.5 mm max.) ±15 mV (0.7 V ≤ VOUT < 1.0 V)
- Switching frequency: 1.0 MHz (at PWM operation)
- High side power MOS FET on-resistance: 450 m Ω
- Low side power MOS FET on-resistance: 350 m Ω
- Soft-start function: 1 ms typ.
- Under voltage lockout function (UVLO): 1.8 V typ. (detection voltage)
- Thermal shutdown function: 135°C typ. (detection temperature)
- Overcurrent limit function: 450 mA (at L = 2.2 μH)
- Automatic recovery type short-circuit protection function:Hiccup control
- Input and output capacitors: Ceramic capacitor compatible
- Operation temperature range: Ta = −40°C to +85°C
- Lead-free (Sn 100%), halogen-free Typical Application Circuit VSS VIN CIN 10 F PVSS VOUT EN SW COUT 10 F L 2.2 H VOUTVIN Efficiency VOUT(S) = 1.8 V η [%] IOUT [mA] 11 00.1 1000 100 100 VIN = 2.5 V VIN = 3.6 V VIN = 4.2 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 10 μA QUIESCENT CURRENT
S-85V1A Series Rev.1.0_00 Block Diagram VSS VIN PVSS SW L CIN COUT VIN VOUT VOUT EN SWRipple generation circuit ON time generation circuit Error amplifier Enable circuit UVP circuit Reverse current detection circuit Overcurrent protection circuit Output control circuit Reference voltage circuit Soft-start cicuit Thermal shutdown circuit UVLO circuit Figure 1
Rev.1.0_00 S-85V1A Series Product Name Structure Users can select output voltage for the S-85V1A Series. Refer to " 1. Product name " regarding the contents of product name, " 2. Package " regarding the package, " 3. Product name list " regarding details of the product name. 1. Product name S-85V1A B x x - I 6 T 1 U Package name abbreviation and packing specification*1 I6T1: SNT-6A, Tape Environmental code U: Lead-free (Sn 100%), halogen-free Output voltage*2, *3 07 to 39 (e.g., when the output voltage is 0.7 V, it is expressed as 07.) *1. Refer to the tape drawing. *2. Refer to " 3. Product name list ". Contact our sales office when the product is necessary. 2. Package Table 1 Package Drawing Codes Package Name Dimension Tape Reel Land SNT-6A PG006-A-P-SD PG006-A-C- SD PG006-A-R-SD PG006-A-L-SD
S-85V1A Series Rev.1.0_00 3. Product name list Table 2 Output Voltage (VOUT) S-85V1A Series
0.7 V ± 15 mV S-85V1AB07-I6T1U
0.8 V ± 15 mV S-85V1AB08-I6T1U
0.9 V ± 15 mV S-85V1AB09-I6T1U
1.0 V ± 1.5% S-85V1AB10-I6T1U 1.1 V ± 1.5% S-85V1AB11-I6T1U 1.2 V ± 1.5% S-85V1AB12-I6T1U 1.3 V ± 1.5% S-85V1AB13-I6T1U 1.4 V ± 1.5% S-85V1AB14-I6T1U 1.5 V ± 1.5% S-85V1AB15-I6T1U 1.6 V ± 1.5% S-85V1AB16-I6T1U 1.7 V ± 1.5% S-85V1AB17-I6T1U 1.8 V ± 1.5% S-85V1AB18-I6T1U 1.9 V ± 1.5% S-85V1AB19-I6T1U 2.0 V ± 1.5% S-85V1AB20-I6T1U 2.1 V ± 1.5% S-85V1AB21-I6T1U 2.2 V ± 1.5% S-85V1AB22-I6T1U 2.3 V ± 1.5% S-85V1AB23-I6T1U 2.4 V ± 1.5% S-85V1AB24-I6T1U 2.5 V ± 1.5% S-85V1AB25-I6T1U 2.6 V ± 1.5% S-85V1AB26-I6T1U 2.7 V ± 1.5% S-85V1AB27-I6T1U 2.8 V ± 1.5% S-85V1AB28-I6T1U 2.9 V ± 1.5% S-85V1AB29-I6T1U 3.0 V ± 1.5% S-85V1AB30-I6T1U 3.1 V ± 1.5% S-85V1AB31-I6T1U 3.2 V ± 1.5% S-85V1AB32-I6T1U 3.3 V ± 1.5% S-85V1AB33-I6T1U 3.4 V ± 1.5% S-85V1AB34-I6T1U 3.5 V ± 1.5% S-85V1AB35-I6T1U 3.6 V ± 1.5% S-85V1AB36-I6T1U 3.7 V ± 1.5% S-85V1AB37-I6T1U 3.8 V ± 1.5% S-85V1AB38-I6T1U 3.9 V ± 1.5% S-85V1AB39-I6T1U Remark Please contact our sales office for products with specifications other than the above.
Rev.1.0_00 S-85V1A Series Pin Configuration 1. SNT-6A Table 3 Top view Figure 2 Pin No. Symbol Description
1 VOUT Voltage output pin
2 VSS GND pin
3 SW External inductor connection pin
4 PVSS Power GND pin
5 VIN Power supply pin
"H" : Enable (normal operation) "L" : Disable (standby)
S-85V1A Series Rev.1.0_00 Absolute Maximum Ratings Table 4 (Unless otherwise specified: Ta = +25°C, VSS = 0 V) Item Symbol Abso lute Maximum Rating Unit VIN pin voltage V IN V SS − 0.3 to VSS + 6.0 V EN pin voltage VEN VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V VOUT pin voltage V OUT VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V SW pin voltage V SW VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V PVSS pin voltage V PVSS VSS − 0.3 to VSS + 0.3 ≤ VSS + 6.0 V Operation temperature T opr −40 to +85 °C Storage temperature T stg −40 to +125 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Thermal Resistance Value Table 5 Item Symbol Condition Min. Typ. Max. Unit Junction-to-ambient thermal resistance *1 θja SNT-6A Board A − 224 − ° C/W Board B − 176 − ° C/W Board C − − − ° C/W Board D − − − ° C/W Board E − − − ° C/W *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Refer to " Power Dissipation" and "Test Board" for details.
Rev.1.0_00 S-85V1A Series Electrical Characteristics Table 6 (VIN = 3.6 V*1, Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Operating input voltage V IN − 2.2 3.6 5.5 V Output voltage*2 VOUT 1.0 V ≤ VOUT ≤ 3.9 V, no external parts VOUT(S) × 0.985 VOUT(S) VOUT(S) × 1.015 V 0.7 V ≤ VOUT < 1.0 V, no external parts VOUT(S) − 0.015 VOUT(S) VOUT(S) + 0.015 V Current consumption at shutdown ISSS V EN = 0 V − − 1 μA Current consumption at switching off ISS1 VOUT = VOUT(S) + 0.1 V, VEN = VIN, no external parts, no switching operation − 10 20 μA High level input voltage V SH V IN = 2.2 V to 5.5 V, EN pin 1.1 − − V Low level input voltage V SL V IN = 2.2 V to 5.5 V, EN pin − − 0.3 V High level input current I SH V IN = 2.2 V to 5.5 V, EN pin, V EN = VIN −0.1 − 0.1 μA Low level input current I SL V IN = 2.2 V to 5.5 V, EN pin, V EN = 0 V −0.1 − 0.1 μA High side power MOS FET on-resistance RHFET I SW = 100 mA − 450 − m Ω Low side power MOS FET on-resistance RLFET I SW = −100 mA − 350 − m Ω High side power MOS FET leakage current IHSW V IN = 2.2 V to 5.5 V, V EN = 0 V, VSW = 0 V − − 0.5 μA Low side power MOS FET leakage current ILSW V IN = 2.2 V to 5.5 V, V EN = 0 V, VSW = VIN −0.5 − − μA Current limit*3 ILIM L = 2.2 μH − 450 − mA ON time*4 tON tON(S) = 1/fSW *5 × VOUT/VIN, VOUT = VOUT(S) × 0.9 tON(S)/1.3 tON(S) t ON(S)/0.7 ns Minimum OFF time t OFF(MIN) − − 100 − ns UVLO detection voltage V UVLO− When V IN falls 1.7 1.8 1.9 V UVLO release voltage V UVLO+ When V IN rises 1.9 2.0 2.1 V UVP detection voltage V UVP − − VOUT(S) × 0.7 − V Soft-start wait time t SSW Time until V OUT starts rising − 1.5 − ms Soft-start time t SS Time until VOUT reaches 90% after it starts rising − 1.0 − ms Thermal shutdown detection temperature TSD Junction temperature − 135 − °C Thermal shutdown release temperature TSR Junction temperature − 115 − °C *1. VIN = VOUT(S) + 1.0 V (VOUT(S) ≥ 2.6 V) *2. VOUT: Actual output voltage VOUT(S): Set output voltage *3. The current limit changes according to the L value for the inductor to be used, input volt age, and output voltage. Refer to " Operation" for details. *4. tON: Actual ON time tON(S): Set ON time *5. fSW: Switching frequency (1 MHz)
S-85V1A Series Rev.1.0_00 Operation 1. Fast transient response Distinctive COT (Constant On-Time) control is used for DC-DC converter control. The S-85V1A Series monitors the output voltage (V OUT) using a comparator and if V OUT falls below the targeted value, the high side power MOS FET will turn on for a cert ain amount of time. Since the high side power MOS FET turns on and V OUT rises immediately after the load current fluctuates rapidly and V OUT falls, the fast transient response is realized. The S-85V1A Series outputs ON time in proportion to V OUT and in inverse proportion to power supply voltage. Therefore, when in continuous mode, even if the power supply voltage or V OUT settings would change, it always operates at a quasi-fixe d frequency of 1 MHz. 2. PWM / PFM switching control The S-85V1A Series automatically switches between the pulse width modulation method (PWM) and pulse frequency modulation method (PFM) according to the load current. If the output current (I OUT) is large, the IC will operate using PWM control. If I OUT is small, the IC using PFM control, the pulse will skip according to the load current. This reduces switching loss and improves efficiency when under light load. The S-85V1A Series has a built-in reverse current detecti on circuit. The reverse current detection circuit monitors the current flowing through the inductor. If the bottom of ripp le current in the inductor falls to 0 mA, the high side power MOS FET and low side power MOS FET will turn off and switching operation will stop. Switching frequency will fall from 1.0 MHz by skipping a pulse. This means that the smaller I OUT is, the more the switching frequency (f SW) will drop, and it reduces switching loss. 3. EN pin This pin starts and stops switching operation. When the EN pi n is set to "L", the operation of all internal circuits, including the high side power MOS FET, is stopped, reduc ing current consumption. Cu rrent consumption increases when a voltage of 0.3 V to V IN − 0.3 V is applied to the EN pin. When not us ing the EN pin, connect it to the VIN pin. Since the EN pin is neither pulled down nor pulled up inter nally, do not use it in the floa ting status. The structure of the EN pin is shown in Figure 3. Table 7 EN Pin Internal Circuit VOUT Pin Voltage "H" Enable (normal operation) VOUT "L" Disable (standby) "High-Z" *1. Refer to *2 in Table 6 in " Electrical Characteristics ". VIN VSS EN Figure 3 4. Under voltage lockout function (UVLO) The S-85V1A Series has a built-in UVLO circuit to prevent t he IC from malfunctioning due to a transient status at power-on or a momentary drop in the supply voltage. When UVLO status is detected, t he high side power MOS FET and low side power MOS FET will turn off, and the SW pin will change to "High-Z". Fo r this reason, switching operation will stop. The soft-start function is reset if UVLO status is detected once, and is restarted by releasing the UVLO status. Note that the other internal circuits operate normally and the status is different from the disabled status. Also, there is a hysteresis width for avoiding malfunctions due to generation of noise etc. in the input voltage.
Rev.1.0_00 S-85V1A Series 5. Thermal shutdown function The S-85V1A Series has a built-in thermal shutdown circui t to limit overheating. When the junction temperature increases to 135°C typ., the thermal shutdown circuit becom es the detection status, and the switching operation is stopped. When the junction temperature decreases to 115°C typ., the thermal shutdown circuit becomes the release status, and the switching o peration is restarted. If the thermal shutdown circuit becomes the detection status due to self-heatin g, the switching operation is stopped and output voltage (V OUT) decreases. For this reason, the self-heating is limited and the temperature of the IC decreases. The thermal shutdown circuit becomes release status when the temperature of the IC decreases, and the switching operation is re started, thus the se lf-heating is generated again. Repeat ing this procedure makes the waveform of V OUT into a pulse-like form. Switching operation sto pping and starting can be stopped by either setting the EN pin to "L", lowering the output current (I OUT) to reduce internal power consumption, or decreasing the ambient temperature. Table 8 Thermal Shutdown Circuit VOUT Pin Voltage Release: 115°C typ.*1 Set value Detection: 135°C typ.*1 "High-Z" *1. Junction temperature 6. Overcurrent protection function The S-85V1A Series has a built-in current limit circuit. The overcurrent protection circuit monitors the current that flows through the low side power MOS FET and limits current to prevent thermal destruction of the IC due to an overload, magnetic saturation in the inductor, etc. When a current exceeding the current limit (I LIM) flows through the low side power MOS FET, the current limit circuit operates and prohibits turning on the high side power MOS FET until the current falls below the low side current limit (ILIMDET). If the value of the current that flows through the low side power MOS FET falls to the I LIMDET or lower, the S-85V1A Series returns to normal operation. I LIMDET is fixed at 270 mA typ. in the IC, and I LIM will vary depending on the external parts to be used. The relation between I LIM, the inductor value (L), the input voltage (V IN), and the output voltage (V OUT) are shown in the following expression. ILIM = ILIMDET + 1 2 × L × fSW × (VIN − VOUT) × VOUT VIN
S-85V1A Series Rev.1.0_00 7. Automatic recovery type short-circuit protection function (Hiccup control) The S-85V1A Series has a built-in automatic recovery type short-circuit protection function for Hiccup control. Hiccup control is a method for periodically carrying out aut omatic recovery when the IC detects overcurrent and stops the switching operation. 7. 1 When over load status is released <1> Overcurrent detection <2> Under voltage protection circuit (UVP circuit) detects a drop in the output voltage (V OUT). <3> 220 μs elapse <4> Switching operation stop (for 9 ms typ.) <5> Overload status release <6> The IC restarts, soft-start function starts. In this case, it is unnecessary to in put an external reset signal for restart. <7> V OUT reaches VOUT(S) after 1.0 ms typ. elapses. <1> <5> <3> <7> VSW VOUT IL 220 s 9.0 ms typ. 1.0 ms typ. ILIMDET = 270 mA typ. IOUT = 200 mA max. 0 A 0 V 0 V VOUT(S) VUVP typ. Overload status Normal load status *1. Inductor current Figure 4 7. 2 When over load status continues <1> Overcurrent detection <2> The UVP circuit detects a drop in V OUT. <3> 220 μs elapse <4> Switching operation stop (for 9 ms typ.) <5> The IC restarts, soft-start function starts. <6> The status returns to <2> when over load status continues after 1.25 ms typ. elapses. <1> VSW VOUT IL ILIMDET = 270 mA typ. IOUT = 200 mA max. 0 A 0 V 0 V VOUT(S) VUVP typ. Overload status *1. Inductor current Figure 5
Rev.1.0_00 S-85V1A Series 8. Pre-bias compatible soft-start function The S-85V1A Series has a built-in pre-bias compatible soft-start circuit. If the pre-bias compatible soft-start circuit starts w hen electrical charge remains in the output voltage (V OUT) as a result of power supply restart, etc., or when V OUT is biased beforehand (pre-bias status), switching operation is stopped until the soft-start voltage exceeds the internal feedback voltage, and then V OUT is maintained. If the soft-start voltage exceeds the internal feedback voltage, switching operation will restart and V OUT will rise to the output voltage setting value (V OUT(S)). This allows VOUT(S) to be reached without lowering the pre-biased V OUT. In soft-start circuits which are not pre-bias compatible, a large current flows as a resu lt of the discharge of the residual electric charge through the low side power MOS FET when switching operation starts, which could cause damage, however in a pre-bias compatible soft-start circuit, the IC is protected from the large current when switching operation starts, and it makes power supply design for the application circuit simpler. In the S-85V1A Series, V OUT reaches VOUT(S) gradually due to t he soft-start circuit. In the following cases, rush current and VOUT overshoot are reduced.
- At power-on
- When the EN pin changes from "L" to "H".
- When UVLO operation is released.
- When thermal shutdown is released.
- At short-circuit recovery In addition, the soft-start circuit operates under the following conditions. The soft-start circuit starts operating after "H" is input to the EN pin and the soft-start wait time (t SSW) = 1.5 ms typ. elapses. The soft-start time (t SS) is set to 1.0 ms typ.
- At power supply restart (the IC restart)
- At UVLO detection (after UVLO release)
- At thermal shutdown detection (after thermal shutdown release)
- After Hiccup control VEN (tSSW)( t SS) VOUT VSW Soft-start operation during pre-biasSoft-start wait time Soft-start time Figure 6
S-85V1A Series Rev.1.0_00 Typical Circuit VSS VIN PVSS SW L 2.2 μH 10 μF 10 μF CIN COUT VIN VOUT VOUT EN SS SWRipple generation circuit ON time generation circuit Error amplifier UVP circuit Output control circuit Reference voltage circuit Soft-start cicuit Thermal shutdown circuit UVLO cicuit Reverse current detection circuit Overcurrent protection circuit Figure 7 Caution The above connection diagram and constants will not guarantee successful operation. Perform thorough evaluation using an actual application to set the constants.
Rev.1.0_00 S-85V1A Series External Parts Selection Selectable values and recommended values for external parts are shown in Table 9. Use ceramic capacitors for C IN and COUT. Table 9 Item Input Capacitor (C IN) Output Capacitor (C OUT) Inductor (L) Selectable value 2.2 μF or larger 4.7 μF to 100 μF 1.5 μH to 10 μH Recommended value 10 μF 10 μF 2.2 μH 1. Input capacitor (C IN) CIN can lower the power supply impedance, average the input current, improve the efficiency and noise tolerance. Select a capacitor according to the impedance of the powe r supply to be used. Also take into consideration the DC bias characteristics of the capacitor to be used. 2. Output capacitor (C OUT) COUT is used to smooth output voltage. If the capacitance is large, the overshoot and undershoot during load transient and output ripple voltage can be improved ev en more. Select a proper capacitor after the sufficient evaluation under actual conditions. Table 10 Recommended Capacitors (C IN, COUT) List (at VOUT(S) ≤ 3.3 V) Manufacturer Part Number Capacitance Withstanding Voltage Dimensions (L × W × H) TDK Corporation C1005X5R0J106M050BC 10 μF 6.3 V 1.0 mm × 0.5 mm × 0.5 mm TDK Corporation C1608X5R0J106K080AB 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.8 mm Table 11 Recommended Capacitors (C IN, COUT) List (at VOUT(S) > 3.3 V) Manufacturer Part Number Capacitance Withstanding Voltage Dimensions (L × W × H) TDK Corporation C1608X5R0J106K080AB 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.8 mm 3. Inductor (L) When selecting L, note the allowable current. If a current ex ceeding this allowable current flows through the inductor, magnetic saturation may occur, and there may be risks wh ich substantially lower efficiency and damage the IC as a result of large current. Therefore, select an inductor so that peak current value (I PK), even during overcurrent detection, does not exceed the allowable current. When prioritizing the load response, select an inductor with a small L value such as 2.2 μH. When prioritizing the efficiency, select an inductor with a large L value such as 10 μH. IPK is calculated using the following expression. IPK = IOUT + 1 2 × L × fSW × (VIN − VOUT) × VOUT VIN Table 12 Recommended Inductors (L) List Manufacturer Part Number Inductance Rated Current Dimensions (L × W × H) TDK Corporation MLP2016G2R2M 2.2 μH 850 mA 2.0 mm × 1.6 mm × 1.0 mm
S-85V1A Series Rev.1.0_00 Board Layout Guidelines Note the following cautions when determining the board layout for the S-85V1A Series.
- Place CIN as close to the VIN pin and the PVSS pin as possible.
- Make the VIN pattern and GND pa ttern as wide as possible.
- Place thermal vias in the GND pattern to ensure sufficient heat dissipation.
- Keep thermal vias near C IN and COUT approximately 3 mm to 4 mm away from capacitor pins.
- Large current flows through the SW pin. Make the wiring area of the pattern to be connected to the SW pin small to minimize parasitic capacitance and emission noise.
- Do not wire the SW pin pattern under the IC. Total size 2.0 mm × 4.5 mm = 9.0 mm2 Figure 8 Reference Board Pattern Caution The above pattern diagram does not guarantee successful operation. Perform thorough evaluation using the actual application to determine the pattern. Remark Refer to the land drawing of SNT-6A and " SNT Package User's Guide ".
Rev.1.0_00 S-85V1A Series Precautions
- Mount external capacitors and inductors as close as possible to the IC, and make single GND.
- Characteristic ripple voltage and spike noise occur in the IC containing switching regulators. Moreover rush current flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and impedance of power supply to be used, fully check them using an actually mounted model.
- The 10 μF capacitor connected between the VIN pin and the VSS pin is a bypass capacitor. It stabilizes the power supply in the IC when application is used with a heav y load, and thus effectively works for stable switching regulator operation. Allocate the bypass capacitor as clos e to the IC as possible, prioritized over other parts.
- Although the IC contains a static elec tricity protection circuit, static electric ity or voltage that exceeds the limit of the protection circuit should not be applied.
- The power dissipation of the IC greatly varies depending on the size and material of the board to be connected. Perform sufficient evaluation using an actual application before designing.
- SII Semiconductor Corporation assumes no responsibility for the way in which this IC is used on products created using this IC or for the specificat ions of that product, nor does SII Semiconductor Corporation assume any responsibility for any infringement of patents or copyrights by products that include this IC either in Japan or in other countries.
S-85V1A Series Rev.1.0_00 Characteristics (Typical Data) 1. Example of major power supply dependence characteristics (Ta = +25°C) 1. 1 Current consumption at switching off (I SS1) vs. Input voltage (VIN) 1. 2 Current consumption during shutdown (I SSS) vs. Input voltage (VIN) 5.52.0 VIN [V] ISS1 [μA] 5.52.0 VIN [V] ISSS [nA] 100 1. 3 Output voltage (V OUT) vs. Input voltage (V IN) VOUT(S) = 1.2 V 1. 4 Output voltage (V OUT) vs. Input voltage (V IN) VOUT(S) = 1.8 V 5.52.0 1.170 VIN [V] VOUT [V] 1.230 1.220 1.210 1.200 1.190 1.180 5.52.0 VIN [V] VOUT [V] 1.840 1.820 1.800 1.780 1.760 1. 5 Output voltage (V OUT) vs. Input voltage (V IN) VOUT(S) = 2.5 V 5.52.0 VIN [V] VOUT [V] 2.600 2.400 2.200 2.000 1.800 1. 6 ON time (t ON) vs. Input voltage (V IN) VOUT(S) = 1.8 V 1. 7 Switching frequency (f SW) vs. Input voltage (V IN) VOUT(S) = 1.8 V 5.52.0 VIN [V] tON [s] 1.0 0.8 0.6 0.4 0.2 0.0 5.52.0 VIN [V] fSW [MHz] 1.4 1.2 1.0 0.8 0.6
Rev.1.0_00 S-85V1A Series 1. 8 Soft-start wait time (t SSW) vs. Input voltage (V IN) 1. 9 Soft-start time (t SS) vs. Input voltage (V IN) 5.52.0 VIN [V] tSSW [ms] 2.50 2.00 1.50 1.00 0.50 0.00 5.52.0 VIN [V] tSS [ms] 2.50 2.00 1.50 1.00 0.50 0.00 1. 10 High side power MOS FET on-resistance (R HFET) vs. Input voltage (V IN) 1. 11 Low side power MOS FET on-resistance (R LFET) vs. Input voltage (V IN) 5.52.0 VIN [V] RHFET [m] 800 700 600 500 400 300 200 100 5.52.0 VIN [V] RHFET [m] 800 700 600 500 400 300 200 100 1. 12 High side power MOS FET leakage current (I HSW) vs. Input voltage (V IN) 1. 13 Low side power MOS FET leakage current (I LSW) vs. Input voltage (V IN) 5.52.0 VIN [V] IHSW [nA] 100 5.52.0 VIN [V] ILSW [nA] 100 1. 14 High level input voltage (V SH) vs. Input voltage (V IN) 1. 15 Low level input voltage (V SL) vs. Input voltage (V IN) 5.52.0 0.0 VIN [V] VSH [V] 1.2 1.0 0.8 0.6 0.4 0.2 5.52.0 0.0 VIN [V] VSL [V] 1.2 1.0 0.8 0.6 0.4 0.2
S-85V1A Series Rev.1.0_00 2. Example of major temperature characteristics (Ta = −40°C to +85°C) 2. 1 Current consumption at switching off (I SS1) vs. Temperature (Ta) 2. 2 Current consumption during shutdown (I SSS) vs. Temperature (Ta) ISS1 [μA] −40 85 7550250−25 Ta [°C] VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 200 ISSS [nA] −40 8 57550250−25 Ta [C] 150 100 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 2. 3 Output voltage (V OUT) vs. Temperature (Ta) VOUT(S) = 1.2 V 2. 4 Output voltage (V OUT) vs. Temperature (Ta) VOUT(S) = 1.8 V 1.170 1.230VOUT [V] −40 8 57550250−25 Ta [C] 1.220 1.210 1.200 1.190 1.180 VDD = 2.2 VVDD = 5.5 V VDD = 3.6 V 1.760 1.840VOUT [V] −40 8 57550250−25 Ta [C] 1.820 1.800 1.780 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 2. 5 Output voltage (V OUT) vs. Temperature (Ta) VOUT(S) = 2.5 V 2.440 2.560VOUT [V] 40 85 755025025 Ta [C] 2.540 2.520 2.500 2.480 2.460 VDD = 5.5 V VDD = 3.6 V 2. 6 ON time (t ON) vs. Temperature (Ta) 2. 7 Switching frequency (f SW) vs. Temperature (Ta) 0.0 1.2 tON [s] −40 8 57550250−25 Ta [C] 1.0 0.8 0.6 0.4 0.2 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V −40 8 57550250−25 Ta [C] fSW [MHz] 1.4 1.2 1.0 0.8 0.6 VDD = 2.2 VVDD = 5.5 V VDD = 3.6 V
Rev.1.0_00 S-85V1A Series 2. 8 Soft-start wait time (t SSW) vs. Temperature (Ta) 2. 9 Soft-start time (t SS) vs. Temperature (Ta) 40 85 755025025 Ta [C] tSSW [ms] 2.50 2.00 1.50 1.00 0.50 0.00 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 40 85 755025025 Ta [C] tSS [ms] 2.50 2.00 1.50 1.00 0.50 0.00 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 2. 10 High side power MOS FET on-resistance (R HFET) vs. Temperature (Ta) 2. 11 Low side power MOS FET on-resistance (R LFET) vs. Temperature (Ta) 40 85 755025025 Ta [C] RHFET [m] 800 700 600 500 400 300 200 100 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 40 85 755025025 Ta [C] RLFET [m] 800 700 600 500 400 300 200 100 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V 2. 12 High side power MOS FET leakage current (I HSW) vs. Temperature (Ta) 2. 13 Low side power MOS FET leakage current (I LSW) vs. Temperature (Ta) −40 8 57550250−25 Ta [C] IHSW [nA] 300 250 200 150 100 VDD = 5.5 VVDD = 3.6 V VDD = 2.2 V −40 8 57550250−25 Ta [C] ILSW [nA] 300 250 200 150 100 VDD = 5.5 V VDD = 3.6 V VDD = 2.2 V 2. 14 High level input voltage (V SH) vs. Temperature (Ta) 2. 15 Low level input voltage (V SL) vs. Temperature (Ta) −40 8 57550250−25 Ta [C] VSH [V] 0.0 1.2 1.0 0.8 0.6 0.4 0.2 VDD = 5.5 V VDD = 3.6 VVDD = 2.2 V 40 85 755025025 Ta [C] VSL [V] 0.0 1.2 1.0 0.8 0.6 0.4 0.2 VDD = 2.2 V VDD = 5.5 V VDD = 3.6 V
S-85V1A Series Rev.1.0_00 2. 16 UVLO detection voltage (V UVLO−) vs. Temperature (Ta) 2. 17 UVLO release voltage (V UVLO+) vs. Temperature (Ta) 40 85 755025025 Ta [C] VUVLO [V] 1.6 2.2 2.1 2.0 1.9 1.8 1.7 40 85 755025025 Ta [C] VUVLO [V] 1.6 2.2 2.1 2.0 1.9 1.8 1.7
Rev.1.0_00 S-85V1A Series 3. Transient response characteristics The external parts shown in Table 13 are used in "3. Transient response characteristics ". Table 13 Element Name Constant Manufacturer Part Number Inductor 2.2 μH ALPS ELECTRIC CO., LTD. GLUHK2R201A Input capacitor 10 μF TDK Corporation C1608X5R0J106K080AB Output capacitor 10 μF TDK Corporation C1608X5R0J106K080AB 3. 1 Power-on (V OUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C) Time [ms] 43210 IL [mA] 700 600 500 400 300 200 100 100 VIN [V], VOUT [V] VOUT IL VIN Time [ms] 43210 IL [mA] 700 600 500 400 300 200 100 100 VIN [V], VOUT [V] VOUT IL VIN 3. 2 Transient response characteristics of EN pin (VOUT = 1.8 V, VIN = 3.6 V, VEN = 0 V → 3.6 V, Ta = +25°C) Time [ms] 43210 IL [mA] 700 600 500 400 300 200 100 100 VEN [V], VOUT [V] VOUT IL VEN Time [ms] 43210 IL [mA] 700 600 500 400 300 200 100 100 VEN [V], VOUT [V] VOUT IL VEN 3. 3 Power supply fluctuation (V OUT = 1.8 V, Ta = +25°C) Time [ms] 403020100 VOUT [V] 2.10 2.00 1.90 1.80 1.70 VIN [V] VOUT VIN Time [ms] 403020100 VOUT [V] 2.10 2.00 1.90 1.80 1.70 VIN [V] VOUT VIN
S-85V1A Series Rev.1.0_00 3. 4 Load fluctuation (V OUT = 1.8 V, VIN = 3.6 V, Ta = +25°C) 1.0 Time [ms] VOUT [V] 2.00 20 1.95 10 1.90 0 1.85 10 1.80 20 1.75 30 1.70 IOUT [mA] VOUT IOUT 1.0 Time [ms] 300 VOUT [V] 2.00 200 1.95 100 1.90 0 1.85 100 1.80 200 1.75 300 1.70 IOUT [mA] VOUT IOUT Reference Data The external parts shown in Table 14 are used in " Reference Data". Table 14 Condition Inductor (L) Input Capacitor (C IN) Output Capacitor (C OUT) <1> GLUHK2R201A (2.2 μH) ALPS ELECTRIC CO., LTD C1005X5R0J106M050BC (10 μF) TDK Corporation C1005X5R0J106M050BC (10 μF) TDK Corporation <2> DFE201210S (2.2 μH) Toko Ink. C1005X5R0J106M050BC (10 μF) TDK Corporation C1005X5R0J106M050BC (10 μF) TDK Corporation 1. V OUT = 1.2 V (External parts: Condition<1>) 1. 1 Efficiency ( η) vs. Output current (I OUT) 1. 2 Output voltage (V OUT) vs. Output current (I OUT) η [%] IOUT [mA] 0.1 10.01 100 10 100 VIN = 3.6 V VIN = 5.5 V VOUT [V] IOUT [mA] 0.01 0.1 10.001 100 10 1.0 1.5 1.4 1.3 1.2 1.1 VIN = 3.6 V VIN = 5.5 V 2. V OUT = 1.8 V (External parts: Condition<1>) 2. 1 Efficiency ( η) vs. Output current (I OUT) 2. 2 Output voltage (V OUT) vs. Output current (I OUT) η [%] IOUT [mA] 0.1 10.01 100 10 100 VIN = 3.6 V VIN = 5.5 V VOUT [V] IOUT [mA] 0.01 0.1 10.001 100 10 1.5 2.0 1.9 1.8 1.7 1.6 VIN = 3.6 V VIN = 5.5 V
Rev.1.0_00 S-85V1A Series 3. V OUT = 1.2 V (External parts: Condition<2>) 3. 1 Efficiency ( η) vs. Output current (I OUT) 3. 2 Output voltage (V OUT) vs. Output current (I OUT) η [%] IOUT [mA] 0.1 10.01 100 10 100 VIN = 3.6 V VIN = 5.5 V VOUT [V] IOUT [mA] 0.01 0.1 10.001 100 10 1.0 1.5 1.4 1.3 1.2 1.1 VIN = 3.6 V VIN = 5.5 V 4. V OUT = 1.8 V (External parts: Condition<2>) 4. 1 Efficiency ( η) vs. Output current (I OUT) 4. 2 Output voltage (V OUT) vs. Output current (I OUT) η [%] IOUT [mA] 0.1 10.01 100 10 100 VIN = 3.6 V VIN = 5.5 V VOUT [V] IOUT [mA] 0.01 0.1 10.001 100 10 1.5 2.0 1.9 1.8 1.7 1.6 VIN = 3.6 V VIN = 5.5 V
S-85V1A Series Rev.1.0_00 Power Dissipation 0 25 50 75 100 125 150 1750.0 0.2 0.4 0.6 0.8 1.0 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 125C max. SNT-6A B A Board Power Dissipation (P D) A 0.45 W B 0.57 W C − D − E −
(1) (2) Thermal via - Material FR-4 Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 Board B Item Specification Thermal via - Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] IC Mount Area SNT-6A Test Board No. SNT6A-A-Board-SD-1.0 SII Semiconductor Corporation
/X53/X49/X49/X20/X53/X65/X6D/X69/X63/X6F/X6E/X64/X75/X63/X74/X6F/X72/X20/X43/X6F/X72/X70/X6F/X72/X61/X74/X69/X6F/X6E /X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X55/X4E/X49/X54 /X41/X4E/X47/X4C/X45 /X6D/X6D /X53/X4E/X54/X2D/X36/X41/X2D/X41/X2D/X50/X4B/X47/X20/X44/X69/X6D/X65/X6E/X73/X69/X6F/X6E/X73 /X50/X47/X30/X30/X36/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X32/X2E/X31 /X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X32/X2E/X31 /X30/X2E/X32/XB1/X30/X2E/X30/X35 /X30/X2E/X34/X38/XB1/X30/X2E/X30/X32 /X30/X2E/X30/X38/X2B/X30/X2E/X30/X35 /X2D/X30/X2E/X30/X32 /X30/X2E/X35 /X31/X2E/X35/X37/XB1/X30/X2E/X30/X33 /X31/X32 /X33 /X34/X35/X36
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/X53/X49/X49/X20/X53/X65/X6D/X69/X63/X6F/X6E/X64/X75/X63/X74/X6F/X72/X20/X43/X6F/X72/X70/X6F/X72/X61/X74/X69/X6F/X6E /X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X55/X4E/X49/X54 /X41/X4E/X47/X4C/X45 /X31/X32/X2E/X35/X6D/X61/X78/X2E /X39/X2E/X30/XB1/X30/X2E/X33 /XF8/X31/X33/XB1/X30/X2E/X32 /X28/X36/X30/XB0/X29 /X28/X36/X30/XB0/X29 /X51/X54/X59/X2E /X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X30 /X50/X47/X30/X30/X36/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X30 /X45/X6E/X6C/X61/X72/X67/X65/X64/X20/X64/X72/X61/X77/X69/X6E/X67/X20/X69/X6E/X20/X74/X68/X65/X20/X63/X65/X6E/X74/X72/X61/X6C/X20/X70/X61/X72/X74 /X53/X4E/X54/X2D/X36/X41/X2D/X41/X2D/X52/X65/X65/X6C /X35/X2C/X30/X30/X30/X20 /X6D/X6D
/X53/X49/X49/X20/X53/X65/X6D/X69/X63/X6F/X6E/X64/X75/X63/X74/X6F/X72/X20/X43/X6F/X72/X70/X6F/X72/X61/X74/X69/X6F/X6E /X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X55/X4E/X49/X54 /X41/X4E/X47/X4C/X45 /X6D/X6D /X53/X4E/X54/X2D/X36/X41/X2D/X41 /X20/X20/X20/X20/X20/X20/X2D/X4C/X61/X6E/X64/X20/X52/X65/X63/X6F/X6D/X6D/X65/X6E/X64/X61/X74/X69/X6F/X6E /X50/X47/X30/X30/X36/X2D/X41/X2D/X4C/X2D/X53/X44/X2D/X34/X2E/X31/X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X4C/X2D/X53/X44/X2D/X34/X2E/X31 /X30/X2E/X33/X30/X2E/X32 /X30/X2E/X35/X32 /X31/X2E/X33/X36 /X30/X2E/X35/X32 /X31 /X32 /X43/X61/X75/X74/X69/X6F/X6E /X31/X2E/X20/X44/X6F/X20/X6E/X6F/X74/X20/X64/X6F/X20/X73/X69/X6C/X6B/X73/X63/X72/X65/X65/X6E/X20/X70/X72/X69/X6E/X74/X69/X6E/X67/X20/X61/X6E/X64/X20/X73/X6F/X6C/X64/X65/X72/X20/X70/X72/X69/X6E/X74/X69/X6E/X67/X20/X75/X6E/X64/X65/X72/X20/X74/X68/X65/X20/X6D/X6F/X6C/X64/X20/X72/X65/X73/X69/X6E/X20/X6F/X66/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X2E /X32/X2E/X20/X54/X68/X65/X20/X74/X68/X69/X63/X6B/X6E/X65/X73/X73/X20/X6F/X66/X20/X74/X68/X65/X20/X73/X6F/X6C/X64/X65/X72/X20/X72/X65/X73/X69/X73/X74/X20/X6F/X6E/X20/X74/X68/X65/X20/X77/X69/X72/X65/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X75/X6E/X64/X65/X72/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X20/X73/X68/X6F/X75/X6C/X64/X20/X62/X65/X20/X30/X2E/X30/X33/X20/X6D/X6D /X20/X6F/X72/X20/X6C/X65/X73/X73/X20/X66/X72/X6F/X6D/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X73/X75/X72/X66/X61/X63/X65/X2E /X33/X2E/X20/X4D/X61/X74/X63/X68/X20/X74/X68/X65/X20/X6D/X61/X73/X6B/X20/X61/X70/X65/X72/X74/X75/X72/X65/X20/X73/X69/X7A/X65/X20/X61/X6E/X64/X20/X61/X70/X65/X72/X74/X75/X72/X65/X20/X70/X6F/X73/X69/X74/X69/X6F/X6E/X20/X77/X69/X74/X68/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X2E /X34/X2E/X20/X52/X65/X66/X65/X72/X20/X74/X6F/X20/X22/X53/X4E/X54/X20/X50/X61/X63/X6B/X61/X67/X65/X20/X55/X73/X65/X72/X27/X73/X20/X47/X75/X69/X64/X65/X22/X20/X66/X6F/X72/X20/X64/X65/X74/X61/X69/X6C/X73/X2E /X31/X2E/X20 /X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29 /X32/X2E/X20 /X20/X28/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X29 /X30/X2E/X30/X33/X20/X6D/X6D /X53/X4E/X54 /X31/X2E/X20/X50/X61/X79/X20/X61/X74/X74/X65/X6E/X74/X69/X6F/X6E/X20/X74/X6F/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X77/X69/X64/X74/X68/X20/X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29/X2E /X32/X2E/X20/X44/X6F/X20/X6E/X6F/X74/X20/X77/X69/X64/X65/X6E/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X74/X6F/X20/X74/X68/X65/X20/X63/X65/X6E/X74/X65/X72/X20/X6F/X66/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X20/X20/X28/X20/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X20/X29/X2E /X31/X2E /X32/X2E/X20 /X28/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X29 /X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29
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