Power Management

S1212B

Seiko Instruments Inc

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR

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www.sii-ic.com HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR © SII Semiconductor Corporation, 2015-2016 Rev.3.0_00 The S-1212B/D Series, developed by using high-withstand voltage CMOS process technology, is a positive voltage regulator with a high-withstand voltage, low current consumption and high-accuracy output voltage, and has a built-in ON / OFF circuit. The S-1212B/D Series operates at the maximum operation voltage of 36 V and a low cu rrent consumption of 6.5 μA typ., and has a built-in low on-resistance output transistor which provides a very small dropout voltage and a large output current. Also, a built-in overcurrent protection circuit to limit overcurrent of the output transistor and a built-in thermal shutdown circuit to limit heat are included.  Features

Output voltage: 2.5 V to 16.0 V, selectable in 0.1 V step
Input voltage: 3.0 V to 36 V
Output voltage accuracy: ±2.0% (Ta = +25°C)
Current consumption: During operation: 6.5 μA typ. (Ta = +25°C) During power-off: 0.1 μA typ. (Ta = +25°C)
Output current: Possible to output 250 mA (at VIN ≥ VOUT(S) + 2.0 V)*1
Input capacitor: A ceramic capacitor can be used. (1.0 μF or more)
Output capacitor: A ceramic capacitor can be used. (1.0 μF to 100 μF)
Built-in overcurrent protection circuit: Limits overcurrent of output transistor.
Built-in thermal shutdown circuit: Detection temperature 165 °C typ.
Built-in ON / OFF circuit: Ensures long battery life.
Built-in discharge shunt circuit: Discharges the electric charge of the output capacitor during power-off. LOW = 70 kΩ typ.)
Operation temperature range: Ta = −40°C to +105°C
Lead-free (Sn 100%), halogen-free *1. Please make sure that the loss of the IC will not exce ed the power dissipation when the output current is large.  Applications
Constant-voltage power supply for industrial equipment
Constant-voltage power supply for home electric appliance  Packages
TO-252-5S(A)
HSOP-8A
HSOP-6
SOT-89-5
HTMSOP-8
SOT-23-5

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00  Block Diagram Reference voltage circuit ON / OFF ON / OFF circuit VIN VSS VOUT Overcurrent protection circuit Thermal shutdown circuit *1. Parasitic diode *2. The ON / OFF circuit controls the internal circuit and the output transistor. Figure 1

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Product Name Structure Users can select the output voltage and package type for the S-1212B/D Series. Refer to " 1. Product name " regarding the contents of product name, " 2. Function list of product types " regarding the product type, " 3. Packages " regarding the package drawings and "4. Product name list " for details of product names. 1. Product name S-1212 x xx - xxxx U Package abbreviation and IC packing specifications*1 V5T2: TO-252-5S(A), Tape E8T1: HSOP-8A, Tape E6T1: HSOP-6, Tape U5T1: SOT-89-5, Tape S8T1: HTMSOP-8, Tape M5T1: SOT-23-5, Tape Set output voltage 25 to G0 (e.g., when the set output voltage is 2.5 V, it is expressed as 25. when the set output voltage is 10.0 V, it is expressed as A0. when the set output voltage is 11.0 V, it is expressed as B0. when the set output voltage is 16. 0 V, it is expressed as G0.) Product type B, D Environmental code U: Lead-free (Sn 100%), halogen-free *1. Refer to the tape drawing. *2. Refer to " 2. Function list of product types " and "3. ON / OFF pin " in " Operation". 2. Function list of product types Table 1 Product Type ON / OFF Logic ON / OFF Pin Input Voltage "H" ON / OFF Pin Input Voltage "L" B Active "H" 1.5 V min. 0.25 V max. D Active "H" 2.0 V min. 0.8 V max. 3. Packages Table 2 Package Drawing Codes Package Name Dimension Tape Reel Land TO-252-5S(A) VA005-A-P-SD VA005-A-C-SD VA005-A-R-SD VA005-A-L-SD HSOP-8A FH008-A-P-SD FH008-A-C-SD FH008-A-R-SD FH008-A-L-SD HSOP-6 FH006-A-P-SD FH006-A-C-SD FH006-A-R-S1 − SOT-89-5 UP005-A-P-SD UP005-A-C-SD UP005-A-R-SD − HTMSOP-8 FP008-A-P-SD FP008-A-C-SD FP008-A-R-SD FP008-A-L-SD SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD −

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 4. Product name list 4. 1 S-1212B/D Series B type ON / OFF logic: Active "H" ON / OFF pin input voltage "H" (VSH) = 1.5 V min., ON / OFF pin input voltage "L" (VSL) = 0.25 V max. Table 3 Output Voltage TO-252-5S(A) HSOP-8A HSOP-6 SOT-89-5 HTMSOP-8 SOT-23-5 3.3 V ± 2.0% S-1212B33-V5T2U S-1212B33-E8T1U S-1212B33-E6T1U S-1212B33-U5T1U S-1212B33-S8T1U S-1212B33-M5T1U 5.0 V ± 2.0% S-1212B50-V5T2U S-1212B50-E8T1U S-1212B50-E6T1U S-1212B50-U5T1U S-1212B50-S8T1U S-1212B50-M5T1U 8.0 V ± 2.0% S-1212B80-V5T2U S-1212B80-E8T1U S-1212B80-E6T1U S-1212B80-U5T1U S-1212B80-S8T1U S-1212B80-M5T1U 12.0 V ± 2.0% S-1212BC0-V5T2U S-1212BC0-E8T1U S-1212BC0-E6T1U S-1212BC0-U5T1U S-1212BC0-S8T1U S-1212BC0-M5T1U Remark Please contact our sales office for products with specifications other than the above output voltage. 4. 2 S-1212B/D Series D type ON / OFF logic: Active "H" ON / OFF pin input voltage "H" (V SH) = 2.0 V min., ON / OFF pin input voltage "L" (VSL) = 0.8 V max. Table 4 Output Voltage TO-252-5S(A) HSOP-8A HSOP-6 SOT-89-5 HTMSOP-8 SOT-23-5 3.3 V ± 2.0% S-1212D33-V5T2U S-1212D33-E8T1U S-1212D33-E6T1U S-1212D33-U5T1U S-1212D33-S8T1U S-1212D33-M5T1U 5.0 V ± 2.0% S-1212D50-V5T2U S-1212D50-E8T1U S-1212D50-E6T1U S-1212D50-U5T1U S-1212D50-S8T1U S-1212D50-M5T1U 8.0 V ± 2.0% S-1212D80-V5T2U S-1212D80-E8T1U S-1212D80-E6T1U S-1212D80-U5T1U S-1212D80-S8T1U S-1212D80-M5T1U 12.0 V ± 2.0% S-1212DC0-V5T2U S-1212DC0-E8T1U S-1212DC0-E6T1U S-1212DC0-U5T1U S-1212DC0-S8T1U S-1212DC0-M5T1U Remark Please contact our sales office for products with specifications other than the above output voltage.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Pin Configurations 1. TO-252-5S(A) Top view 51 4 2 Figure 2 Table 5 Pin No. Symbol Description

1 VOUT Output voltage pin

2 ON / OFF ON / OFF pin

3 VSS GND pin

4 NC*1 No connection

5 VIN Input voltage pin

*1. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin. 2. HSOP-8A Bottom view Top view Table 6 Pin No. Symbol Description

2 NC*2 No connection

3 NC*2 No connection

4 ON / OFF ON / OFF pin

5 VSS GND pin

6 NC*2 No connection

7 NC*2 No connection

8 VIN Input voltage pin

*1. Connect the heat sink of backside at shadowed area to the board, and set electric potential GND. However, do not use it as the function of electrode. *2. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 3. HSOP-6 13 2 465 Top view Figure 4 Table 7 Pin No. Symbol Description

2 VSS GND pin

3 ON / OFF ON / OFF pin

6 VIN Input voltage pin

*1. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin. 4. SOT-89-5 13 2 Top view Figure 5 Table 8 Pin No. Symbol Description

1 NC*1 No connection

3 VIN Input voltage pin

4 VOUT Output voltage pin

5 ON / OFF ON / OFF pin

*1. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin. 5. HTMSOP-8 Bottom view Top view Figure 6 Table 9 Pin No. Symbol Description *1. Connect the heat sink of backside at shadowed area to the board, and set electric potential GND. However, do not use it as the function of electrode. *2. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 6. SOT-23-5 13 2 4 5 Top view Figure 7 Table 10 Pin No. Symbol Description

1 VIN Input voltage pin

3 NC*1 No connection

5 VOUT

*1. The NC pin is electrically open. The NC pin can be connected to the VIN pin or the VSS pin.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00  Absolute Maximum Ratings Table 11 (Ta = +25°C unless otherwise specified) Item Symbol Absolute Maximum Rating Unit Input voltage VIN V SS − 0.3 to VSS + 45 V VON / OFF V SS − 0.3 to VIN + 0.3 ≤ VSS + 45 V Output voltage VOUT V SS − 0.3 to VIN + 0.3 ≤ VSS + 45 V Output current IOUT 280 mA Junction temperature Tj −40 to +150 °C Operation ambient temperature T opr −40 to +105 °C Storage temperature Tstg −40 to +150 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.  Thermal Resistance Value Table 12 Item Symbol Condition Min. Typ. Max. Unit Junction-to-ambient thermal resistance*1 θja TO-252-5S(A) Board A − 90 − ° C/W Board B − 58 − ° C/W Board C − 38 − ° C/W Board D − 30 − ° C/W Board E − 29 − ° C/W HSOP-8A Board A − 115 − ° C/W Board B − 82 − ° C/W Board C − 42 − ° C/W Board D − 43 − ° C/W Board E − 35 − ° C/W HSOP-6 Board A − 106 − ° C/W Board B − 82 − ° C/W Board C − − − ° C/W Board D − 51 − ° C/W Board E − 48 − ° C/W SOT-89-5 Board A − 123 − ° C/W Board B − 90 − ° C/W Board C − − − ° C/W Board D − 53 − ° C/W Board E − 41 − ° C/W HTMSOP-8 Board A − 161 − ° C/W Board B − 116 − ° C/W Board C − 44 − ° C/W Board D − 44 − ° C/W Board E − 35 − ° C/W SOT-23-5 Board A − 180 − ° C/W Board B − 143 − ° C/W Board C − − − ° C/W Board D − − − ° C/W Board E − − − ° C/W *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Refer to " Power Dissipation" and "Test Board" for details.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Electrical Characteristics Table 13 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Output voltage*1 V OUT(E) V IN = VOUT(S) + 2.0 V, IOUT = 10 mA VOUT(S) × 0.980 VOUT(S) VOUT(S) × 1.020 V 1 Output current*2 IOUT V IN ≥ VOUT(S) + 2.0 V 250*4 − − mA 3 Dropout voltage*3 V drop IOUT = 125 mA − 0.35 − V1 IOUT = 250 mA − 0.80 − V1 Line regulation ΔVOUT1 ΔVIN • VOUT VOUT(S) + 0.5 V ≤ VIN ≤ 36 V, IOUT = 10 mA, Load regulation ΔVOUT2 VIN = VOUT(S) + 2.0 V, 2.5 V ≤ VOUT(S) < 5.1 V, 0.1 mA ≤ IOUT ≤ 40 mA, Tj = +25°C − 16 30 mV 1 VIN = VOUT(S) + 2.0 V, 5.1 V ≤ VOUT(S) < 12.1 V, 0.1 mA ≤ IOUT ≤ 40 mA, Tj = +25°C − 16 35 mV 1 VIN = VOUT(S) + 2.0 V, 12.1 V ≤ VOUT(S) ≤ 16.0 V, 0.1 mA ≤ IOUT ≤ 40 mA, Tj = +25°C − 16 40 mV 1 Current consumption during operation ISS1 VIN = 18.0 V, VON / OFF = VIN, IOUT = 0.01 mA − 6.5 8.5 μA2 Current consumption during power-off I SS2 VIN = 18.0 V, VON / OFF = 0 V, no load − 0.1 3.5 μA2 Input voltage V IN − 3.0 − 36 V − ON / OFF pin input voltage "H" V SH VIN = 18.0 V, RL = 1.0 kΩ, determined by VOUT output level B type (ON / OFF logic active "H") 1.5 − − V 4 Dt y p e (ON / OFF logic active "H") 2.0 − − V 4 ON / OFF pin input voltage "L" V SL VIN = 18.0 V, RL = 1.0 kΩ, determined by VOUT output level B type (ON / OFF logic active "H") − − 0.25 V 4 Dt y p e (ON / OFF logic active "H") − − 0.8 V 4 ON / OFF pin input current "H" I SH V IN = 18.0 V, VON / OFF = VIN −0.1 − 0.1 μA4 ON / OFF pin input current "L" ISL V IN = 18.0 V, VON / OFF = 0 V −0.1 − 0.1 μA4 Ripple rejection |RR| VIN = VOUT(S) + 2.0 V, f = 100 Hz, ΔVrip = 0.5 Vrms, IOUT = 10 mA 2.5 V ≤ VOUT(S) < 3.6 V − 45 − dB 5 3.6 V ≤ VOUT(S) < 6.1 V − 40 − dB 5 6.1 V ≤ VOUT(S) < 10.1 V − 35 − dB 5 10.1 V ≤ VOUT(S) ≤ 16.0 V − 30 − dB 5 Short-circuit current I short VIN = VOUT(S) + 2.0 V, VON / OFF = VIN, VOUT = 0 V − 120 − mA 3 Thermal shutdown detection temperature T SD Junction temperature − 165 − °C − Thermal shutdown release temperature T SR Junction temperature − 140 − °C − Discharge shunt resistance during power-off R LOW V IN = 18.0 V, VON / OFF = 0 V, VOUT = 2.0 V − 70 − kΩ 6 *1. V OUT(S): Set output voltage V OUT(E): Actual output voltage The output voltage when V IN = VOUT(S) + 2.0 V, IOUT = 10 mA *2. The output current at which the output voltage becomes 95% of VOUT(E) after gradually increasing the output current. *3. V drop = VIN1 − (VOUT3 × 0.98) V IN1 is the input voltage at which the output voltage becomes 98% of V OUT3 after gradually decreasing the input voltage. V OUT3 is the output voltage when VIN = VOUT(S) + 2.0 V, and IOUT = 125 mA or 250 mA. *4. Due to limitation of the power dissipation, this value ma y not be satisfied. Attention should be paid to the power dissipation when the output current is large. This specification is guaranteed by design.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series Set to GND VOUTVIN VSS VON / OFF A Figure 13 Test Circuit 6

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00  Standard Circuit CIN *1 CL Input Output GNDSingle GND VOUTVIN VSS ON / OFF *1. CIN is a capacitor for stabilizing the input. *2. CL is a capacitor for stabilizing the output. Figure 14 Caution The above connection diagram and constants will not guarantee successful operation. Perform thorough evaluation using an actual application to set the constants.  Condition of Application Input capacitor (C IN): A ceramic capacitor wi th capacitance of 1.0 μF or more is recommended. Output capacitor (CL): A ceramic capacitor wi th capacitance of 1.0 μF to 100 μF is recommended. Caution Generally, in a voltage regul ator, an oscillation may occur depending on the selection of the external parts. Perform thorough evaluation including th e temperature characteristics with an actual application using the above capacitors to confirm no oscillation occurs.  Selection of Input Capacitor (CIN) and Output Capacitor (CL) The S-1212B/D Series requires C L between the VOUT pin and the VSS pin for phase compensation. The operation is stabilized by a ceramic capacitor with capacitance of 1.0 μF to 100 μF. When using an OS capacitor, a tantalum capacitor or an aluminum electrolytic ca pacitor, the capacitance also must be 1.0 μF to 100 μF. However, an oscillation may occur depending on the equivalent series resistance (ESR). Moreover, the S-1212B/D Series requires C IN between the VIN pin and the VSS pin for a stable operation. Generally, an oscillaiton may occur when a voltage regulator is used under the conditon that the impedance of the power supply is high. Note that the output voltage transient characteristics varies depending on the capacitance of C IN and CL and the value of ESR. Caution Perform thorough evaluation including the temperature characteristics with an actual application to select C IN and CL.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Explanation of Terms 1. Low dropout voltage regulator This is a voltage regulator which made dropout voltage small by its built-in low on-resistance output transistor. 2. Output voltage (V OUT) This voltage is output at an accuracy of ±2.0% when the input voltag e, the output current and the temperature are in a certain condition*1. *1. Differs depending on the product. Caution If the certain condition is not satisfied, the output voltage may exceed the accuracy range of ±2.0%. Refer to " Electrical Characteristics" and " Characteristics (Typical Data)" for details. 3. Line regulation  ΔVOUT1 ΔVIN • VOUT Indicates the dependency of the output voltage against th e input voltage. That is, the value shows how much the output voltage changes due to a change in the input voltage after fixing output current constant. 4. Load regulation ( ΔVOUT2) Indicates the dependency of the output voltage against the output current. T hat is, the value shows how much the output voltage changes due to a change in the output current after fixing input voltage constant. 5. Dropout voltage (V drop) Indicates the difference between input voltage (VIN1) and the output voltage when the output voltage becomes 98% of the output voltage value (VOUT3) at VIN = VOUT(S) + 2.0 V after the input voltage (VIN) is decreased gradually. Vdrop = VIN1 − (VOUT3 × 0.98)

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 3. ON / OFF pin The ON / OFF pin controls the internal circuit and the out put transistor in order to st art and stop the regulator. When the ON / OFF pin is set to OFF, the internal circuit st ops operating and the output transistor between the VIN pin and the VOUT pin is turned off, reducing current consumption significantly. The internal equivalent circuit related to the ON / OFF pin is configured as shown in Figure 16. Since the ON / OFF pin is neither pulled down nor pulled up, do not use it in the floating status. When not using the ON / OFF pin, connect it to the VIN pin. Note that the current consumption increases when a voltage of VSL max.*1 to VIN − 0.3 V is applied to the ON / OFF pin. Table 14 Product Type ON / OFF Pin Internal Circuit VOUT Pin Voltage Current Consumption B / D "H": ON Operate Constant value*2 ISS1 B / D "L": OFF Stop Pulled down to VSS *3 ISS2 *1. Refer to Table 13 in " Electrical Characteristics". *2. The constant value is output due to the regulating based on the set output voltage value. *3. The VOUT pin voltage is pulled down to V SS due to the discharge shunt circuit (R LOW = 70 k Ω typ.), the feedback resistors (Rs and Rf) and a load. VSS ON / OFF VIN Figure 16 4. Overcurrent protection circuit The S-1212B/D Series has a built-in overcu rrent protection circuit to limit the overcurrent of the output transistor. When the VOUT pin is shor ted with the VSS pin, that is, at the time of the output shor t-circuit, the output current is limited to 120 mA typ. due to the over current protection circuit operation. T he S-1212B/D Series restarts regulating when the output transistor is released from the overcurrent status. Caution 1. This overcurrent protection circuit does not work as for thermal protection. For example, when the output transistor keeps the overcurrent status long at the ti me of output short-circuit or due to other reasons, pay attention to the conditions of the input voltage and the load current so as not to exceed the power dissipation. 2. Note that any interference may be caused in the output voltage start-up when a load heavier than V OUT(S) 100 mA is connected.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 5. Thermal shutdown circuit The S-1212B/D Series has a built-in thermal shutdown circ uit to limit overheating. When the junction temperature increases to 165°C typ., the thermal shutdown circuit becomes the detection status, and t he regulating is stopped. When the junction temperature decreases to 140 °C typ., the thermal shutdown circuit becomes the release status, and the regulator is restarted. If the thermal shutdown circuit becomes the detection status due to self-heatin g, the regulating is stopped and V OUT decreases. For this reason, the self -heating is limited and the temperature of the IC decreases. The thermal shutdown circuit becomes release status when the temperature of t he IC decreases, and the r egulating is restarted, thus the self-heating is generat ed again. Repeating this proced ure makes the waveform of V OUT into a pulse-like form. This phenomenon continues unless decreasing either or both of the input voltage and the output current in order to reduce the internal power consumption, or decre asing the ambient temperature. Note that the product may suffer physical damage such as deterioration if the above phenomenon occurs continuously. Caution 1. When the heat radiation of the application is not in a good condition, the self-heating cannot be limited immediately, and the IC may suffer physical damage. Perform thorough evaluation including the temperature characteristics with an actual application to confirm no problems happen. 2. If a large load current flows during the restart process of regulating after the thermal shutdown circuit changes to the release status from the detection status, the thermal shutdown circuit becomes the detection status again due to self-heating, and a problem may happen in the restart of regulating. A large load current, for example, occurs when charging to the C L whose capacitance is large. Perform thorough evaluation including the temperature characteristics with an actual application to select CL. Table 15 Thermal Shutdown Circuit VOUT Pin Voltage Release: 140°C typ.*1 Constant value *2 Detection: 165°C typ.*1 Pulled down to V SS *1. Junction temperature *2. The constant value is output due to the r egulating based on the set output voltage value. *3. The VOUT pin voltage is pulled down to V SS due to the feedback resistors (Rs and Rf) and a load.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Precautions

Generally, when a voltage regulator is used under the condition that the load current value is small (0.1 mA or less), the output voltage may increase due to the leakage current of an output transistor.
Generally, when a voltage regulator is used under the condition th at the temperature is hi gh, the output voltage may increase due to the leakage current of an output transistor.
Generally, when the ON / OFF pin is used under the cond ition of OFF, the output voltage may increase due to the leakage current of an output transistor.
Generally, when a voltage regulator is used under the condition that the impedance of the power supply is high, an oscillation may occur. Perform thorough evaluation including the temperature charac teristics with an actual application to select CIN.
Generally, in a voltage regulator, an oscillation may oc cur depending on the selection of the external parts. The following use conditions are recommended in the S-1212B/D Series, however, perform thorough evaluation including the temperature characteristics with an actual application to select CIN and CL. Input capacitor (C IN): A ceramic capacitor wi th capacitance of 1.0 μF or more is recommended. Output capacitor (CL): A ceramic capacitor wi th capacitance of 1.0 μF to 100 μF is recommended.
Generally, in a voltage regulator, the values of an overshoot and an undershoot in the output voltage vary depending on the variation factors of input voltage start-up, input voltage fluctuation and lo ad fluctuation etc., or the capacitance of C IN or C L and the value of the equivalent series resistanc e (ESR), which may cause a problem to the stable operation. Perform thorough evaluation in cluding the temperature characteristics with an actual application to select CIN and CL.
Generally, in a voltage regulator, an overshoot may occur in the output voltage momentarily if the input voltage steeply changes when the input voltage is started up or the input voltage fluctuates etc. Perform thorough evaluation including the temperature characteristics with an actual application to confirm no problems happen.
Generally, in a voltage regulator, if the VOUT pin is steeply shorted with GND, a negative voltage exceeding the absolute maximum ratings may occur in the VOUT pin due to resonance phenomenon of the inductance and the capacitance including CL on the application. The resonance phenomenon is expected to be weakened by inserting a series resistor into the resonance pat h, and the negative voltage is expected to be limited by inserting a protection diode between the VOUT pin and the VSS pin.
If the input voltage is start ed up steeply under the condition that the capacitance of C L is large, the thermal shutdown circuit may be in the detection status by self-heating due to the charge current to CL.
Make sure of the conditions for the input voltage, output vo ltage and the load current so that the internal loss does not exceed the power dissipation.
Do not apply an electrostatic discharge to this IC that ex ceeds the performance ratings of the built-in electrostatic protection circuit.
When considering the output current value t hat the IC is able to output, make sure of the output current value specified in Table 13 in " Electrical Characteristics" and footnote *4 of the table.
Wiring patterns on the application related to the VIN pin, the VOUT pin and the VSS pin should be designed so that the impedance is low. When mounting C IN between the VIN pin and the VSS pin and C L between the VOUT pin and the VSS pin, connect the capacitors as close as possible to the respective destination pins of the IC.
In the package equipped with heat sink of backside, mount the heat sink firmly. Sinc e the heat radiation differs according to the condition of the app lication, perform thorough evaluation with an actual application to confirm no problems happen.
SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00  Characteristics (Typical Data) 1. Output voltage vs. Output current (When load current increases) (Ta = +25°C) 1. 1 V OUT = 2.5 V 1. 2 V OUT = 5.0 V 100 200 300 400 500 600 700 8000 3.0 1.5 1.0 0.5 2.0 2.5 0.0 VOUT [V] IOUT [mA] VIN = 3.0 V VIN = 4.5 V VIN = 3.5 V VIN = 9.0 V 100 200 300 400 500 600 700 8000 6.0 3.0 2.0 1.0 4.0 5.0 0.0 VOUT [V] IOUT [mA] VIN = 5.5 V VIN = 7.0 V VIN = 6.0 V VIN = 9.0 V Remark In determining the output current, attention should be paid to the following. 1. The minimum output current value and footnote *4 of Table 13 in " Electrical Characteristics" 2. Power dissipation 2. Output voltage vs. Input voltage (Ta = +25°C) 2. 1 V OUT = 2.5 V 2. 2 V OUT = 5.0 V 6 1 21 82 43 03 60 2.9 1.7 VOUT [V] VIN [V] 2.3 1.9 2.5 2.1 2.7 IOUT = 0.1 mA IOUT = 10 mA IOUT = 40 mA 6 1 21 82 43 03 60 5.4 4.2 VOUT [V] VIN [V] 4.8 4.4 5.0 4.6 5.2 IOUT = 0.1 mA IOUT = 10 mA IOUT = 40 mA 2. 3 V OUT = 16.0 V 6 1 21 82 43 03 60 16.4 15.2 VOUT [V] VIN [V] 15.8 15.4 16.0 15.6 16.2 IOUT = 0.1 mA IOUT = 10 mA IOUT = 40 mA

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 3. Dropout voltage vs. Output current 3. 1 V OUT = 2.5 V 3. 2 V OUT = 5.0 V 50 100 150 200 2500 Vdrop [V] IOUT [mA] 1.2 0.0 0.6 0.2 0.8 0.4

1.0 Tj = +150C

Tj = +25C Tj = 40C 50 100 150 200 2500 Vdrop [V] IOUT [mA] 1.2 0.0 0.6 0.2 0.8 0.4 Tj = +25C Tj = 40C 3. 3 V OUT = 16.0 V 50 100 150 200 2500 Vdrop [V] IOUT [mA] 1.2 0.0 0.6 0.2 0.8 0.4 Tj = +25C Tj = 40C 4. Dropout voltage vs. Junction temperature 4. 1 V OUT = 2.5 V 4. 2 V OUT = 5.0 V −25 0 150 125 100 75 50 25−40 0.0 0.6 Vdrop [V] 0.5 0.4 0.3 0.2 0.1 T j [C] IOUT = 10 mA IOUT = 125 mA −25 0 150 125 100 75 50 25−40 0.0 0.6 Vdrop [V] 0.5 0.4 0.3 0.2 0.1 T j [C] IOUT = 10 mA IOUT = 125 mA 4. 3 V OUT = 16.0 V −25 0 150 125 100 75 50 25−40 0.0 0.6 Vdrop [V] 0.5 0.4 0.3 0.2 0.1 T j [C] IOUT = 10 mA IOUT = 125 mA

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 5. Dropout voltage vs. Set output voltage (Ta = +25°C) 1.0 0.0 VOUT(S) [V] 0.8 0.6 0.4 0.2 Vdrop [V] IOUT = 0.1 mA IOUT = 10 mA IOUT = 40 mA IOUT = 125 mA IOUT = 250 mA 6. Output voltage vs. Junction temperature 6. 1 V OUT = 2.5 V VIN = 4.5 V 6. 2 V OUT = 5.0 V VIN = 7.0 V −25 0 150 125 100 75 50 25−40 2.45 2.55 Tj [C] 2.53 2.51 2.49 2.47 VOUT [V] −25 0 150 125 100 75 50 25−40 4.90 5.10 Tj [C] 5.06 5.02 4.98 4.94 VOUT [V] 6. 3 V OUT = 16.0 V VIN = 18.0 V −25 0 150 125 100 75 50 25−40 4.90 5.10 Tj [C] 5.06 5.02 4.98 4.94 VOUT [V]

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 7. Current consumption during operation vs. Input voltage (When ON / OFF pin is ON, no load) 7. 1 V OUT = 2.5 V 7. 2 V OUT = 5.0 V 6 1 21 82 43 03 60 50.0 0.0 ISS1 [A] VIN [V] 40.0 30.0 20.0 10.0 Tj = 150C Tj = 25C Tj = 40C 6 1 21 82 43 03 60 50.0 0.0 ISS1 [A] VIN [V] 40.0 30.0 20.0 10.0 Tj = 150C Tj = 25C Tj = 40C 7. 3 V OUT = 16.0 V 6 1 21 82 43 03 60 50.0 0.0 ISS1 [A] VIN [V] 40.0 30.0 20.0 10.0 Tj = 150C Tj = 25C Tj = 40C 8. Current consumption during operation vs. Junction temperature 8. 1 V OUT = 2.5 V VIN = 18.0 V 8. 2 V OUT = 5.0 V VIN = 18.0 V 25 50 75 100 125 1500 10.0 0.0 Tj [C] 8.0 6.0 4.0 2.0 ISS1 [A] 25 50 75 100 125 1500 10.0 0.0 Tj [C] 8.0 6.0 4.0 2.0 ISS1 [A] 8. 3 V OUT = 16.0 V VIN = 18.0 V 25 50 75 100 125 1500 10.0 0.0 Tj [C] 8.0 6.0 4.0 2.0 ISS1 [A]

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 9. Current consumption during operation vs. Output current (Ta = +25°C) 9. 1 V OUT = 2.5 V 9. 2 V OUT = 5.0 V 50 100 150 200 2500 50.0 0.0 40.0 30.0 20.0 10.0 ISS1 [A] IOUT [mA] VIN = 13.5 V VIN = 3.5 V 50 100 150 200 2500 50.0 0.0 40.0 30.0 20.0 10.0 ISS1 [A] IOUT [mA] VIN = 13.5 V VIN = 6.0 V 9. 3 V OUT = 16.0 V 50 100 150 200 2500 50.0 0.0 40.0 30.0 20.0 10.0 ISS1 [A] IOUT [mA] VIN = 20.0 V VIN = 17.0 V 10. Ripple rejection (Ta = +25°C) 10. 1 V OUT = 2.5 V VIN = 4.5 V, CL = 1.0 μF 10. 2 V OUT = 5.0 V VIN = 7.0 V, CL = 1.0 μF Ripple Rejection [dB] Frequency [Hz] 10 100k 120 10k1k100 100 IOUT = 10 mA IOUT = 250 mA IOUT = 0.01 mA Ripple Rejection [dB] Frequency [Hz] 10 100k 120 10k1k100 100 IOUT = 10 mA IOUT = 250 mA IOUT = 0.01 mA 10. 3 V OUT = 16.0 V VIN = 18.0 V, CL = 1.0 μF Ripple Rejection [dB] Frequency [Hz] 10 100k 120 10k1k100 100 IOUT = 10 mA IOUT = 250 mA IOUT = 0.01 mA

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series  Reference Data 1. Characteristics of input transient response (Ta = +25°C) 1. 1 V OUT = 2.5 V IOUT = 40 mA, CIN = 1.0 μF, VIN = 11.5 V ↔ 13.5 V, tr = tf = 5.0 μs 1. 2 V OUT = 5.0 V IOUT = 40 mA, CIN = 1.0 μF, VIN = 11.5 V ↔ 13.5 V, tr = tf = 5.0 μs VOUT [V] t [ms] VIN [V] 3.3 2.3 3.1 2.9 2.7 2.5 CL = 10.0 FVIN VOUT CL = 22.0 F VOUT [V] t [ms] VIN [V] 5.8 4.8 5.6 5.4 5.2 5.0 CL = 10.0 FVIN VOUT CL = 22.0 F 1. 3 V OUT = 16.0 V IOUT = 40 mA, CIN = 1.0 μF, VIN = 18.0 V ↔ 19.5 V, tr = tf = 5.0 μs VOUT [V] t [ms] VIN [V] 16.8 15.8 16.6 16.4 16.2 16.0 CL = 10.0 F VIN VOUT CL = 22.0 F 2. Characteristics of load transient response (Ta = +25°C) 2. 1 V OUT = 2.5 V VIN = 13.5 V, CIN = 1.0 μF, IOUT = 50 mA ↔ 100 mA 2. 2 V OUT = 5.0 V VIN = 13.5 V, CIN = 1.0 μF, IOUT = 50 mA ↔ 100 mA VOUT [V] t [ms] 2.9 2.3 150 150 2.6 2.4 2.7 2.5 2.8 100 50 100 IOUT [mA] CL = 10.0 F IOUT VOUT CL = 22.0 F VOUT [V] t [ms] 5.4 4.8 150 150 5.1 4.9 5.2 5.0 5.3 100 50 100 IOUT [mA] CL = 10.0 F IOUT VOUT CL = 22.0 F 2. 3 V OUT = 16.0 V VIN = 18.0 V, CIN = 1.0 μF, IOUT = 50 mA ↔ 100 mA VOUT [V] t [ms] 16.4 15.8 150 150 16.1 15.9 16.2 16.0 16.3 100 50 100 IOUT [mA] CL = 10.0 F IOUT VOUT CL = 22.0 F

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00 3. Transient response characteristics of ON / OFF pin (Ta = +25°C) 3. 1 V OUT = 2.5 V VIN = 13.5 V, CL = 10.0 μF, CIN = 1.0 μF, IOUT = 125 mA, VON / OFF = 0 V → 13.5 V 3. 2 V OUT = 5.0 V VIN = 13.5 V, CL = 10.0 μF, CIN = 1.0 μF, IOUT = 125 mA, VON / OFF = 0 V → 13.5 V VON / OFF [V] t [ms] 6.0 0.0 9.0 3.0 12.0 15.0 3.0 12 18 VOUT [V] VOUT VON / OFF VON / OFF [V] t [ms] 6.0 0.0 9.0 3.0 12.0 15.0 3.0 12 18 VOUT [V] VOUT VON / OFF 4. Load transient response characteristics dependent on capacitance (Ta = +25°C) 4. 1 V OUT = 5.0 V VIN = 13.5 V, CIN = 1.0 μF, IOUT = 50 mA → 100 mA VIN = 13.5 V, CIN = 1.0 μF, IOUT = 100 mA → 50 mA 20 40 60 80 1000 0.20 Undershoot [V] CL [F] 0.15 0.10 0.05 0.00 20 40 60 80 1000 0.20 Overshoot [V] CL [F] 0.15 0.10 0.05 0.00 5. Input transient response characteristics dependent on capacitance (Ta = +25°C) 5. 1 V OUT = 5.0 V VIN = 7.0 V → 12.0 V, tr = 5.0 μs, CIN = 1.0 μF, IOUT = 40 mA VIN = 12.0 V → 7.0 V, tr = 5.0 μs, CIN = 1.0 μF, IOUT = 40 mA 20 40 60 80 1000 2.0 Overshoot [V] CL [μF] 1.5 1.0 0.5 0.0 20 40 60 80 1000 2.0 Undershoot [V] CL [μF] 1.5 1.0 0.5 0.0

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 6. Example of equivalent series resistance vs. Output current characteristics (Ta = +25°C) 100 0.1 250 IOUT [mA] RESR [Ω] CIN = CL = 1.0 μF Stable CIN VIN VSS CL RESR S-1212B/D Series VOUT ON / OFF *1. CL: TDK Corporation CGA5L3X8R1H105M (1.0 μ F) Figure 17 Figure 18

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR S-1212B/D Series Rev.3.0_00  Power Dissipation 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. TO-252-5S(A) E D C B A 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. HSOP-8A E D C B A Board Power Dissipation (PD) Board Power Dissipation (PD) A 1.39 W A 1.09 W B 2.16 W B 1.52 W C 3.29 W C 2.98 W D 4.17 W D 2.91 W E 4.31 W E 3.57 W 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. HSOP-6 E D B A 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. SOT-89-5 E D B A Board Power Dissipation (PD) Board Power Dissipation (PD) A 1.18 W A 1.02 W B 1.52 W B 1.39 W C − C − D 2.45 W D 2.36 W E 2.60 W E 3.05 W

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 S-1212B/D Series 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. HTMSOP-8 E D C B A 0 25 50 75 100 125 150 1750 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 150C max. SOT-23-5 B A Board Power Dissipation (PD) Board Power Dissipation (PD) A 0.78 W A 0.69 W B 1.08 W B 0.87 W C 2.84 W C − D 2.84 W D − E 3.57 W E −

(1) (2) (3) 74.2 x 74.2 x t0.070 Thermal via - Material FR-4 Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via - Size [mm] 114.3 x 76.2 x t1.6 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Thermal via Number: 4 Diameter: 0.3 mm Board B Item Specification Size [mm] 114.3 x 76.2 x t1.6 Board C Item Specification Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 IC Mount Area enlarged view TO-252-5S Test Board No. TO252-5S-A-Board-SD-1.0 SII Semiconductor Corporation

(4) (5) Board D Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 74.2 x 74.2 x t0.070 Thermal via - Board E Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via Number: 4 Diameter: 0.3 mm Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 enlarged view IC Mount Area TO-252-5S Test Board No. TO252-5S-A-Board-SD-1.0 SII Semiconductor Corporation

(1) (2) (3) Size [mm] 114.3 x 76.2 x t1.6 Item Specification Thermal via - Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 Item Specification 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Material FR-4 Thermal via - Item Specification Board A Board B Board C Thermal via Number: 4 Diameter: 0.3 mm Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 IC Mount Area enlarged view HSOP-8A Test Board No. HSOP8A-A-Board-SD-1.0 SII Semiconductor Corporation

(4) (5) Board D Board E Thermal via Number: 4 Diameter: 0.3 mm Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Thermal via - Item Specification Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Item Specification enlarged view IC Mount Area HSOP-8A Test Board No. HSOP8A-A-Board-SD-1.0 SII Semiconductor Corporation

(1) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] 1 Land pattern and wiring for testing: t0.070 4 74.2 x 74.2 x t0.070 (2) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 (3) Item Specification (4) 4 74.2 x 74.2 x t0.070 Size [mm] Material FR-4 Number of copper foil layer 4 74.2 x 74.2 x t0.035 Copper foil layer [mm] Thermal via Number: 4 Diameter: 0.3 mm Material FR-4 Number of copper foil layer 74.2 x 74.2 x t0.035 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 114.3 x 76.2 x t1.6 Item Specification Board D -Thermal via 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Board E Thermal via - Size [mm] 114.3 x 76.2 x t1.6 Copper foil layer [mm] Pattern for heat radiation: 2000mm2 t0.070 Thermal via - Board A 74.2 x 74.2 x t0.070 Board B 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 Land pattern and wiring for testing: t0.070 IC Mount Area enlarged view HSOP-6 Test Board No. HSOP6-A-Board-SD-1.0 SII Semiconductor Corporation

(1) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] 1 Land pattern and wiring for testing: t0.070 4 74.2 x 74.2 x t0.070 (2) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] 1 Land pattern and wiring for testing: t0.070 2 74.2 x 74.2 x t0.035 3 74.2 x 74.2 x t0.035 4 74.2 x 74.2 x t0.070 (3) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] 1 Pattern for heat radiation: 2000mm 2 t0.070 2 74.2 x 74.2 x t0.035 3 74.2 x 74.2 x t0.035 4 74.2 x 74.2 x t0.070 (4) Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] 1 Pattern for heat radiation: 2000mm 2 t0.070 2 74.2 x 74.2 x t0.035 3 74.2 x 74.2 x t0.035 4 74.2 x 74.2 x t0.070 Board B Thermal via - Thermal via - Board A Board E Thermal via Number: 4 Diameter: 0.3 mm Board D Thermal via - IC Mount Area enlarged view SOT-89-5 Test Board No. SOT895-A-Board-SD-1.0 SII Semiconductor Corporation

(1) (2) (3) Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 Thermal via - Board B Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Thermal via - Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via Number: 4 Diameter: 0.3 mm Board C Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 IC Mount Area enlarged view HTMSOP-8/HMSOP-8 Test Board No. HTMSOP8/HMSOP8-A-Board-SD-1.0 SII Semiconductor Corporation

(4) (5) Board D Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Thermal via - Board E Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via Number: 4 Diameter: 0.3 mm Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Pattern for heat radiation: 2000mm 2 t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 IC Mount Area enlarged view HTMSOP-8/HMSOP-8 Test Board No. HTMSOP8/HMSOP8-A-Board-SD-1.0 SII Semiconductor Corporation

(1) (2) Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 74.2 x 74.2 x t0.070 Thermal via - Board B Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via - Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 IC Mount Area SOT-23-3/5/6 Test Board No. SOT23x-A-Board-SD-1.0 SII Semiconductor Corporation

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Product Information

S1212B specifications and overview.

Summary

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Description

HIGH-WITHSTAND VOLTAGE LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR

Source title S1212B Datasheet(PDF) - Seiko Instruments Inc

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