S5712E

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HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH ICwww.sii-ic.com © SII Semiconductor Corporation, 2017 Rev.1.0_00 This IC, developed by CMOS technology, is a high-accuracy Hall effect switch IC that operates at a low voltage with a high- speed detection. The output voltage changes when this IC detects the intensity level of magnetic flux density. Using this IC with a magnet makes it possible to detect the open / close in various devices. High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package. Due to its low voltage operation and low curr ent consumption, this IC is suitable for battery-operated portable devices. Also, due to its high-accuracy magnetic characte ristics, this IC can make operation's dispersion in the system combined with magnet smaller. SII Semiconductor Corporation offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall ICs for customer systems. Our magnetic simulation se rvice will reduce prototype pr oduction, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetic simulation service, contact our sales office.  Features

• Pole detection*1: Detection of omnipolar, S pole or N pole
• Output logic*1: Active "L", active "H"
• Output form*1: Nch open-drain output, CMOS output
• Magnetic sensitivity*1: B OP = 3.0 mT typ. B OP = 4.5 mT typ. B OP = 7.0 mT typ.
• Operating cycle (current consumption): Product with omnipolar detection t CYCLE = 0.10 ms (IDD = 640 μA) typ. Product with S pole or N pole detection t CYCLE = 0.05 ms (IDD = 640 μA) typ.
• Power supply voltage range: VDD = 1.6 V to 3.5 V
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free *1. The option can be selected.  Applications
• Mobile phone, smart phone
• Notebook PC, tablet PC
• Digital video camera
• Plaything, portable game
• Home appliance  Package
• SOT-23-3
• SNT-4A

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Product Name Structure 1. Product name S-5712 E x x x x - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and packing specifications*1 M3T1: SOT-23-3, Tape I4T1: SNT-4A, Tape Magnetic sensitivity 1: B OP = 3.0 mT typ. 2: B OP = 4.5 mT typ. 3: B OP = 7.0 mT typ. Output logic L: Active "L" H: Active "H" Pole detection D: Detection of omnipolar S: Detection of S pole N: Detection of N pole Output form N: Nch open-drain output C: CMOS output Operating cycle E: t CYCLE = 0.10 ms typ. (Product with omnipolar detection) t CYCLE =0.05 ms typ. (Product with S pole or N pole detection) *1. Refer to the tape drawing. 2. Package Table 1 Package Drawing Codes Package Name Dimension Tape Reel Land SOT-23-3 MP003-C-P-SD MP003-C-C-SD MP003-Z-R-SD − SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00 3. Product name list 3. 1 SNT-4A 3. 1. 1 CMOS output product Table 2 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Output Logic Magnetic Sensitivity (BOP) S-5712ECSL2-I4T1U 0.05 ms typ. CMOS out put S pole Active "L" 4.5 mT typ. S-5712ECSL3-I4T1U 0.05 ms typ. CMOS out put S pole Active "L" 7.0 mT typ. Remark Please contact our sales office for products other than the above.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Pin Configuration 1. SOT-23-3 Top view Figure 3 Table 3 Pin No. Symbol Pin Description

1 VSS GND pin

2 VDD Power supply pin

3 OUT Output pin

1. SNT-4A 3 2 Top view Figure 4 Table 4 Pin No. Symbol Pin Description

1 VDD Power supply pin

2 VSS GND pin

3 NC*1 No connection

4 OUT Output pin

*1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00  Absolute Maximum Ratings Table 5 (Ta = +25°C unless otherwise specified) Item Symbol Absolute Maximum Rating Unit Power supply voltage VDD VSS − 0.3 to VSS + 7.0 V Output current IOUT ±1.0 mA Output voltage Nch open-drain output product VOUT VSS − 0.3 to VSS + 7.0 V CMOS output product VSS − 0.3 to VDD + 0.3 V Operation ambient temperature T opr −40 to +85 °C Storage temperature Tstg −40 to +125 °C Caution The absolute maximum ratings are rated values exceeding whic h the product could suffer physical damage. These values must therefore not be exceeded under any conditions.  Thermal Resistance Value Table 6 Item Symbol Condition Min. Typ. Max. Unit Junction-to-ambient thermal resistance*1 θja SOT-23-3 Board A − 200 − ° C/W Board B − 165 − ° C/W Board C − − − ° C/W Board D − − − ° C/W Board E − − − ° C/W SNT-4A Board A − 300 − ° C/W Board B − 242 − ° C/W Board C − − − ° C/W Board D − − − ° C/W Board E − − − ° C/W *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Refer to " Power Dissipation" and "Test Board" for details.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Electrical Characteristics 1. Product with omnipolar detection 1. 1 S-5712ExDxx Table 7 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD − 1.60 1.85 3.50 V − Current consumption I DD Average value − 640 1000 μA 1 Output voltage V OUT Nch open-drain output product Output transistor Nch, I OUT = 0.5 mA − − 0.4 V 2 CMOS output product Output transistor Nch, I OUT = 0.5 mA − − 0.4 V 2 Output transistor Pch, I OUT = −0.5 mA VDD − 0.4 − − V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V − − 1 μA 4 Operating cycle t CYCLE − − 0.10 0.20 ms − 2. Product with S pole or N pole detection 2. 1 S-5712ExSxx, S-5712ExNxx Table 8 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD − 1.60 1.85 3.50 V − Current consumption I DD Average value − 640 1000 μA 1 Output voltage V OUT Nch open-drain output product Output transistor Nch, I OUT = 0.5 mA − − 0.4 V 2 CMOS output product Output transistor Nch, I OUT = 0.5 mA − − 0.4 V 2 Output transistor Pch, I OUT = −0.5 mA VDD − 0.4 − − V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V − − 1 μA 4 Operating cycle t CYCLE − − 0.05 0.10 ms −

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00  Magnetic Characteristics 1. Product with omnipolar detection 1.1 Product with B OP = 3.0 mT typ. Table 9 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 1.4 3.0 4.0 mT 5 N pole B OPN − −4.0 −3.0 −1.4 mT 5 Release point*2 S pole B RPS − 1.1 2.2 3.7 mT 5 N pole B RPN − −3.7 −2.2 −1.1 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 0.8 − mT 5 N pole B HYSN B HYSN = |BOPN − BRPN| − 0.8 − mT 5 1. 2 Product with B OP = 4.5 mT typ. Table 10 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 2.5 4.5 6.0 mT 5 N pole B OPN − −6.0 −4.5 −2.5 mT 5 Release point*2 S pole B RPS − 2.0 3.5 5.5 mT 5 N pole B RPN − −5.5 −3.5 −2.0 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 1.0 − mT 5 N pole B HYSN B HYSN = |BOPN − BRPN| − 1.0 − mT 5 1. 3 Product with B OP = 7.0 mT typ. Table 11 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 5.0 7.0 8.5 mT 5 N pole B OPN − −8.5 −7.0 −5.0 mT 5 Release point*2 S pole B RPS − 3.7 5.2 7.2 mT 5 N pole B RPN − −7.2 −5.2 −3.7 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 1.8 − mT 5 N pole B HYSN B HYSN = |BOPN − BRPN| − 1.8 − mT 5

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series 2. Product with S pole detection 2. 1 Product with B OP = 3.0 mT typ. Table 12 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 1.4 3.0 4.0 mT 5 Release point*2 S pole B RPS − 1.1 2.2 3.7 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 0.8 − mT 5 2. 2 Product with B OP = 4.5 mT typ. Table 13 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 2.5 4.5 6.0 mT 5 Release point*2 S pole B RPS − 2.0 3.5 5.5 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 1.0 − mT 5 2. 3 Product with B OP = 7.0 mT typ. Table 14 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 S pole B OPS − 5.0 7.0 8.5 mT 5 Release point*2 S pole B RPS − 3.7 5.2 7.2 mT 5 Hysteresis width*3 S pole B HYSS B HYSS = BOPS − BRPS − 1.8 − mT 5

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00 3. Product with N pole detection 3. 1 Product with B OP = 3.0 mT typ. Table 15 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 N pole B OPN − −4.0 −3.0 −1.4 mT 5 Release point*2 N pole B RPN − −3.7 −2.2 −1.1 mT 5 Hysteresis width*3 N pole B HYSN B HYSN = |BOPN − BRPN| − 0.8 − mT 5 3. 2 Product with B OP = 4.5 mT typ. Table 16 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 N pole B OPN − −6.0 −4.5 −2.5 mT 5 Release point*2 N pole B RPN − −5.5 −3.5 −2.0 mT 5 Hysteresis width*3 N pole B HYSN B HYSN = |BOPN − BRPN| − 1.0 − mT 5 3. 3 Product with B OP = 7.0 mT typ. Table 17 (Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1 N pole B OPN − −8.5 −7.0 −5.0 mT 5 Release point*2 N pole B RPN − −7.2 −5.2 −3.7 mT 5 Hysteresis width*3 N pole B HYSN B HYSN = |BOPN − BRPN| − 1.8 − mT 5 *1. B OPN, BOPS: Operation points BOPN and B OPS are the values of magnetic fl ux density when t he output voltage (V OUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. *2. B RPN, BRPS: Release points BRPN and B RPS are the values of magnetic fl ux density when t he output voltage (V OUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. *3. B HYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Standard Circuit S-5712E Series VDD VSS OUTCIN R*1 100 kΩ 0.1 μF *1. Resistor (R) is unnecessary for the CMOS output product. Figure 10 Caution The above connection diag ram and constant will not guara ntee successful operation. Perform thorough evaluation using the actual application to set the constant.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series 3. Basic operation This IC changes the output voltage level (V OUT) according to the level of the magnet ic flux density (N pole or S pole) applied by a magnet. The following explains the operation when the output logic is active "L". 3. 1 Product with omnipolar detection When the magnetic flux density ve rtical to the marking surfac e exceeds the operation point (B OPN or B OPS) after the S pole or N pole of a magnet is moved clos er to the marking surface of this IC, V OUT changes from "H" to "L". When the S pole or N pole of a magnet is moved further away from the ma rking surface of this IC and the magnetic flux density is lower than the release point (BRPN or BRPS), VOUT changes from "L" to "H". Figure 15 shows the relationship between the magnetic flux density and VOUT. VOUT 0BOPN B RPN BRPS BOPS BHYSSBHYSN H L Magnetic flux density (B) N pole S pole Figure 15 3. 2 Product with S pole detection When the magnetic flux dens ity vertical to the ma rking surface exceeds B OPS after the S pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "H" to "L". W hen the S pole of a magnet is moved further away from the mark ing surface of this IC and the m agnetic flux density is lower than B RPS, VOUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic flux density and VOUT. VOUT

0 BRPS BOPS

H L Magnetic flux density (B) N pole S pole Figure 16

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00  Precautions

• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed- through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes.
• Do not apply an electrostatic discharge to this IC that ex ceeds the performance ratings of the built-in electrostatic protection circuit.
• Large stress on this IC may affect t he magnetic characteristics. Avoid lar ge stress which is caused by the handling during or after mounting the IC on a board.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Characteristics (Typical Data) 1. S-5712ExSxx 1. 1 Operation point, release point (B OP, BRP) vs. Temperature (Ta) 1. 1. 1 S-5712ExSx2 1. 1. 2 S-5712ExSx3 BOP, BRP [mT] 0.0 2.0 4.0 6.0 −40 VDD = 1.85 V +85−25 0 +25 +50 +75 Ta [°C] BOPS BRPS BOP, BRP [mT] 0.0 2.5 5.0 7.5 10.0 −40 VDD = 1.85 V +85−25 0 +25 +50 +75 Ta [°C] BOPS BRPS 1. 2 Operation point, release point (B OP, BRP) vs. Power supply voltage (VDD) 1. 2. 1 S-5712ExSx2 1. 2. 2 S-5712ExSx3 BOP, BRP [mT] 6.0 4.0 2.0 0.0 1.5 3.5 2.0 2.5 3.0 VDD [V] Ta = +25°C BOPS BRPS BOP, BRP [mT] 10.0 7.5 5.0 2.5 0.0 VDD [V] Ta = +25°C BOPS BRPS

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-5712E Series Rev.1.0_00 1. 3 Current consumption (I DD) vs. Temperature (Ta) 1. 4 Current consumption (I DD) vs. Power supply voltage (VDD) −40 0 +25 +50 1200 Ta [°C] −25 +85+75 IDD [μA] 1000 800 600 400 200 VDD = 1.85 V VDD = 3.0 V 1.5 3.5 IDD [μA] VDD [V] 3.02.52.0 1200 1000 800 600 400 200 Ta = +85°C Ta = +25°C Ta = −40°C 1. 5 Operating cycle (t CYCLE) vs. Temperature (Ta) 1. 6 Operating cycle (t CYCLE) vs. Power supply voltage (VDD) −40 0 +25 +50 200 Ta [°C] −25 150 100 +85+75 VDD = 3.0 V VDD = 1.85 V tCYCLE [μs] 200 150 100 VDD [V] tCYCLE [μs] Ta = +85°C Ta = −40°C Ta = +25°C

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.0_00 S-5712E Series  Power Dissipation 0 25 50 75 100 125 150 1750.0 0.2 0.4 0.6 0.8 1.0 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 125C max. SOT-23-3 B A 0 25 50 75 100 125 150 1750.0 0.2 0.4 0.6 0.8 1.0 Ambient temperature (Ta) [C] Power dissipation (PD) [W] Tj = 125C max. SNT-4A B A Board Power Dissipation (PD) Board Power Dissipation (PD) A 0.50 W A 0.33 W B 0.61 W B 0.41 W C − C − D − D − E − E −

(1) (2) Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 74.2 x 74.2 x t0.070 Thermal via - Board B Item Specification Size [mm] 114.3 x 76.2 x t1.6 Thermal via - Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 IC Mount Area SOT-23-3/5/6 Test Board No. SOT23x-A-Board-SD-1.0 SII Semiconductor Corporation

(1) (2) Thermal via - Material FR-4 Board A Item Specification Size [mm] 114.3 x 76.2 x t1.6 Number of copper foil layer 2 Copper foil layer [mm] Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Size [mm] 114.3 x 76.2 x t1.6 Board B Item Specification Thermal via - Material FR-4 Number of copper foil layer 4 Copper foil layer [mm] IC Mount Area SNT-4A Test Board No. SNT4A-A-Board-SD-1.0 SII Semiconductor Corporation

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Disclaimers (Handling Precautions) 1. All the information described herei n (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is cu rrent as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or infringement of third-party intellectual property rights and any other rights due to the use of the information described herein. 3. SII Semiconductor Corporation is not responsible for da mages caused by the incorrect information described herein. 4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. SII Semiconductor Corporation is not re sponsible for damages caused by failures and/or accidents, etc. that occur due to the use of products outside their specified ranges. 5. When using the products described herei n, confirm their applicatio ns, and the laws and regulat ions of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products described herein must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or militar y use. SII Semiconductor Corporation is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biol ogical or chemical weapons, missiles, or other military use. 8. The products described herein are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention sy stems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation. Especially, the products described her ein cannot be used for life support dev ices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of these products s hould therefore take responsibility to gi ve thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products described herein do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Take care when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright info rmation and know-how of SII Semiconductor Corporation. The information described herein does not convey any lic ense under any intellectual property rights or any other rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information described herein for the purpose of disclosing it to a thir d-party without the express permission of SII Semiconductor Corporation is strictly prohibited. 14. For more details on the information de scribed herein, contact our sales office. 1.0-2016.01 www.sii-ic.com