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www.sii-ic.com BATTERY PROTECTION IC FOR 1-CELL PACK © SII Semiconductor Corporation, 2016 Rev.1.0_00 The S-8240B Series is a protection IC for lithium-ion / lith ium polymer rechargeable batteries and includes high-accuracy voltage detection circuits and delay circuits. The S-8240B Series is suitable for protecting 1-cell lithium-ion / lithium polymer rechargeable battery packs from overcharge, overdischarge, and overcurrent. Features
- High-accuracy voltage detection circuit Overcharge detection voltage 3.5 V to 4.6 V (5 mV step) Accuracy ±20 mV Overcharge release voltage 3.1 V to 4.6 V *1 Accuracy ±50 mV Overdischarge detection voltage 2.0 V to 3.4 V (10 mV step) Accuracy ±50 mV Overdischarge release voltage 2.0 V to 3.4 V *2 Accuracy ±100 mV Discharge overcurrent detection voltage 0. 015 V to 0.100 V (1 mV step) Accuracy ±3 mV Load short-circuiting detection voltage 0.065 V to 0.500 V (25 mV step)*3 Accuracy ±40 mV Charge overcurrent detection voltage −0.100 V to −0.015 V (1 mV step) Accuracy ±3 mV
- Detection delay times are generated only by an internal circuit (external capacitors are unnecessary).
- 0 V battery charge function is selectable: Available, unavailable
- Power-down function is selectable: Available, unavailable
- Release condition of discharge overcurrent status is selectable: Load disconnection, charger connection
- Release voltage of discharge overcurrent status is selectable: V RIOV, VDIOV
- High-withstand voltage: VM pin and CO pin: Absolute maximum rating 28 V
- Wide operation temperature range: Ta = −40°C to +85°C
- Low current consumption During operation: 1.5 μA typ., 3.0 μA max. (Ta = +25°C) During power-down: 50 nA max. (Ta = +25°C) During overdischarge: 500 nA max. (Ta = +25°C)
- Lead-free (Sn 100%), halogen-free *1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected from a range of 0 V to 0.4 V in 50 mV step.) *2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected from a range of 0 V to 0.7 V in 100 mV step.) *3. Load short-circuiting detection voltage = Discharge overcurrent detection voltage + 0.025 × n (n can be selected from any integer value greater or equal to 2) Applications
- Lithium-ion rechargeable battery pack
- Lithium polymer rechargeable battery pack Packages
- SNT-6A
- HSNT-6 (1212)
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 Block Diagram Discharge overcurrent detection comparator Control logic Delay circuit Oscillator VM VSS VDD CO DO Overcharge detection comparator Overdischarge detection comparator Load short-circuiting detection comparator Charge overcurrent detection comparator Figure 1
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Product Name Structure 1. Product name S-8240B xx - xxxx U Package abbreviation and IC packing specifications*1 I6T1: SNT-6A, Tape A6T2: HSNT-6 (1212), Tape Serial code*2 Sequentially set from AA to ZZ Environmental code U: Lead-free (Sn 100%), halogen-free *1. Refer to the tape drawing. *2. Refer to "3. Product name list". 2. Packages Table 1 Package Drawing Codes Package Name Dimension Tape Reel Land SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD HSNT-6 (1212) PM006-A-P-SD PM006-A- C-SD PM006-A-R-SD PM006-A-L-SD 3. Product name list 3. 1 SNT-6A Table 2 (1 / 2) Product Name Overcharge Detection Voltage [VCU] Overcharge Release Voltage [VCL] Overdischarge Detection Voltage [VDL] Overdischarge Release Voltage [VDU] Discharge Overcurrent Detection Voltage [VDIOV] Load Short- circuiting Detection Voltage [VSHORT] Charge Overcurrent Detection Voltage [VCIOV] Table 2 (2 / 2) Product Name Delay Time Combination*1
0 V Battery Charge
Function Power-down Function Release Condition of Discharge Overcurrent Status Release Voltage of Discharge Overcurrent Status S-8240BAA-I6T1U (1) Available Unavail able Load disconnection VRIOV S-8240BAB-I6T1U (2) Available Unavail able Load disconnection VRIOV S-8240BAE-I6T1U (3) Available Unavail able Load disconnection VRIOV *1. Refer to Table 4 about the details of the delay time combinations. Remark Please contact our sales office for the products with detection voltage value other than those specified above.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 3. 2 HSNT-6 (1212) Table 3 (1 / 2) Product Name Overcharge Detection Voltage [VCU] Overcharge Release Voltage [VCL] Overdischarge Detection Voltage [VDL] Overdischarge Release Voltage [VDU] Discharge Overcurrent Detection Voltage [VDIOV] Load Short- circuiting Detection Voltage [VSHORT] Charge Overcurrent Detection Voltage [VCIOV] Table 3 (2 / 2) Product Name Delay Time Combination*1
0 V Battery
Charge Function Power-down Function Release Condition of Discharge Overcurrent Status Release Voltage of Discharge Overcurrent Status S-8240BAA-A6T2U (1) Available Unavail able Load disconnection VRIOV S-8240BAB-A6T2U (2) Available Unavail able Load disconnection VRIOV *1. Refer to Table 4 about the details of the delay time combinations. Remark Please contact our sales office for the products with detection voltage value other than those specified above. Table 4 Delay Time Combination Overcharge Detection Delay Time [tCU] Overdischarge Detection Delay Time [tDL] Discharge Overcurrent Detection Delay Time [tDIOV] Load Short-circuiting Detection Delay Time [tSHORT] Charge Overcurrent Detection Delay Time [tCIOV] (1) 1.0 s 64 ms 8 ms 280 μs 8 ms (2) 1.0 s 64 ms 16 ms 530 μs 16 ms (3) 1.0 s 64 ms 64 ms 280 μs 64 ms Remark The delay times can be changed within the range listed in Table 5. For details, please contact our sales office. Table 5 Delay Time Symbol Selection Range Remark Overcharge detection delay time tCU 256 ms 512 ms 1.0 s Select a value from the left. Overdischarge detection delay time tDL 32 ms 64 ms 128 ms Select a value from the left. Discharge overcurrent detection delay time t DIOV 4 ms 8 ms 16 ms Select a value from the left. Load short-circuiting detection delay time t SHORT 280 μs 530 μs − Select a value from the left. Charge overcurrent detection delay time t CIOV 4 ms 8 ms 16 ms Select a value from the left.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Pin Configurations 1. SNT-6A Top view Figure 2 Table 6 Pin No. Symbol Description
1 NC*1 No connection
2 CO Connection pin of charge control FET gate
(CMOS output)
3 DO Connection pin of discharge control FET gate
(CMOS output)
4 VSS Input pin for negative power supply
5 VDD Input pin for positive power supply
6 VM Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD pin or VSS pin. 2. HSNT-6 (1212) Top view Bottom view Figure 3 Table 7 Pin No. Symbol Description
1 NC*2 No connection
(CMOS output) (CMOS output) (Overcurrent / charger detection pin) *1. Connect the heat sink of backside at shadowed area to the board, and set electric potential open or VDD. However, do not use it as the function of electrode. *2. The NC pin is electrically open. The NC pin can be connected to VDD pin or VSS pin.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 Absolute Maximum Ratings Table 8 (Ta = +25°C unless otherwise specified) Item Symbol Applied Pin Absolute Maximum Rating Unit Input voltage between VDD pin and VSS pin V DS VDD VSS − 0.3 to VSS + 6 V VM pin input voltage VVM VM V DD − 28 to VDD + 0.3 V DO pin output voltage VDO DO V SS − 0.3 to VDD + 0.3 V CO pin output voltage VCO CO V VM − 0.3 to VDD + 0.3 V Power dissipation SNT-6A PD − 400*1 mW HSNT-6 (1212) − 480*1 mW Operation ambient temperature Topr − −40 to +85 °C Storage temperature Tstg − −55 to +125 °C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 0 50 100 150 400 200 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 700 300 100 500 600 SNT-6A HSNT-6 (1212) Figure 4 Power Dissipation of Package (When Mounted on Board)
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Electrical Characteristics 1. Ta = +25°C Table 9 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Detection Voltage Overcharge detection voltage VCU − V CU − 0.020 V CU V CU + 0.020 V 1 Ta = −10°C to +60°C*1 VCU − 0.025 V CU V CU + 0.025 V 1 Overcharge release voltage VCL VCL ≠ VCU V CL − 0.050 V CL V CL + 0.050 V 1 VCL = VCU V CL − 0.025 V CL V CL + 0.020 V 1 Overdischarge detection voltage VDL − V DL − 0.050 V DL V DL + 0.050 V 2 Overdischarge release voltage VDU VDL ≠ VDU V DU − 0.100 V DU V DU + 0.100 V 2 VDL = VDU V DU − 0.050 V DU V DU + 0.050 V 2 Discharge overcurrent detection voltage VDIOV − V DIOV − 0.003 V DIOV V DIOV + 0.003 V 2 Load short-circuiting detection voltage VSHORT − V SHORT − 0.040 V SHORT V SHORT + 0.040 V 2 Charge overcurrent detection voltage VCIOV − V CIOV − 0.003 V CIOV V CIOV + 0.003 V 2 Discharge overcurrent release voltage VRIOV − V DD − 1.2 V DD − 0.8 V DD − 0.5 V 2
0 V Battery Charge Function
0 V battery charge starting charger voltage V0CHA 0 V battery charge function
"available" 0.0 0.7 1.5 V 2
0 V battery charge inhibition battery voltage V0INH 0 V battery charge function
"unavailable" 0.9 1.2 1.5 V 2 Internal Resistance Resistance between VDD pin and VM pin RVMD V DD = 1.8 V, VVM = 0 V 750 1500 3000 kΩ 3 Resistance between VM pin and VSS pin RVMS V DD = 3.4 V, VVM = 1.0 V 10 20 30 k Ω 3 Input Voltage Operation voltage between VDD pin and VSS pin V DSOP1 − 1.5 − 6.0 V − Operation voltage between VDD pin and VM pin V DSOP2 − 1.5 − 28 V − Input Current Current consumption during operation IOPE V DD = 3.4 V, VVM = 0 V − 1.5 3.0 μA 3 Current consumption during power-down IPDN V DD = VVM = 1.5 V − − 50 nA 3 Current consumption during overdischarge IOPED V DD = VVM = 1.5 V − − 0.5 μA 3 Output Resistance CO pin resistance "H" RCOH − 5 10 20 kΩ 4 CO pin resistance "L" RCOL − 5 10 20 kΩ 4 DO pin resistance "H" RDOH − 5 10 20 kΩ 4 DO pin resistance "L" RDOL − 5 10 20 kΩ 4 Delay Time Overcharge detection delay time tCU − t CU × 0.7 tCU tCU × 1.3 − 5 Overdischarge detection delay time tDL − tDL × 0.7 tDL tDL × 1.3 − 5 Discharge overcurrent detection delay time tDIOV − tDIOV × 0.7 tDIOV tDIOV × 1.3 − 5 Load short-circuiting detection delay time tSHORT − tSHORT × 0.7 tSHORT tSHORT × 1.3 − 5 Charge overcurrent detection delay time tCIOV − tCIOV × 0.7 tCIOV tCIOV × 1.3 − 5 *1. Since products are not screened at high and low temperature, the spec ification for this temperat ure range is guaranteed by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 2. Ta = −40°C to +85°C*1 Table 10 (Ta = −40°C to +85°C*1 unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Detection Voltage Overcharge detection voltage VCU − V CU − 0.045 V CU V CU + 0.030 V 1 Overcharge release voltage VCL VCL ≠ VCU V CL − 0.080 V CL V CL + 0.060 V 1 VCL = VCU V CL − 0.050 V CL V CL + 0.030 V 1 Overdischarge detection voltage VDL − V DL − 0.080 V DL V DL + 0.060 V 2 Overdischarge release voltage VDU VDL ≠ VDU V DU − 0.130 V DU V DU + 0.110 V 2 VDL = VDU V DU − 0.080 V DU V DU + 0.060 V 2 Discharge overcurrent detection voltage VDIOV − V DIOV − 0.003 V DIOV V DIOV + 0.003 V 2 Load short-circuiting detection voltage VSHORT − V SHORT − 0.040 V SHORT V SHORT + 0.040 V 2 Charge overcurrent detection voltage VCIOV − V CIOV − 0.003 V CIOV V CIOV + 0.003 V 2 Discharge overcurrent release voltage VRIOV − V DD − 1.4 V DD − 0.8 V DD − 0.3 V 2 "available" 0.0 0.7 1.7 V 2 "unavailable" 0.7 1.2 1.7 V 2 Internal Resistance Resistance between VDD pin and VM pin RVMD V DD = 1.8 V, VVM = 0 V 500 1500 6000 kΩ 3 Resistance between VM pin and VSS pin RVMS V DD = 3.4 V, VVM = 1.0 V 7.5 20 40 k Ω 3 Input Voltage Operation voltage between VDD pin and VSS pin V DSOP1 − 1.5 − 6.0 V − Operation voltage between VDD pin and VM pin V DSOP2 − 1.5 − 28 V − Input Current Current consumption during operation IOPE V DD = 3.4 V, VVM = 0 V − 1.5 4.0 μA 3 Current consumption during power-down IPDN V DD = VVM = 1.5 V − − 150 nA 3 Current consumption during overdischarge IOPED V DD = VVM = 1.5 V − − 1.0 μA 3 Output Resistance CO pin resistance "H" RCOH − 2.5 10 30 k Ω 4 CO pin resistance "L" RCOL − 2.5 10 30 k Ω 4 DO pin resistance "H" RDOH − 2.5 10 30 k Ω 4 DO pin resistance "L" RDOL − 2.5 10 30 kΩ 4 Delay Time Overcharge detection delay time tCU − tCU × 0.5 tCU tCU × 2.5 − 5 Overdischarge detection delay time tDL − tDL × 0.5 tDL tDL × 2.5 − 5 Discharge overcurrent detection delay time tDIOV − tDIOV × 0.5 tDIOV tDIOV × 2.5 − 5 Load short-circuiting detection delay time tSHORT − tSHORT × 0.5 tSHORT tSHORT × 2.5 − 5 Charge overcurrent detection delay time tCIOV − tCIOV × 0.5 tCIOV tCIOV × 2.5 − 5 *1. Since products are not screened at high and low temperature, the spec ification for this temperat ure range is guaranteed by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Test Circuits Caution Unless otherwise specified, the output voltage levels "H" and "L" at CO pin (V CO) and DO pin (V DO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to V VM and the DO pin level with respect to VSS. 1. Overcharge detection voltage, overcharge release voltage (Test circuit 1) Overcharge detection voltage (VCU) is defined as the voltage V1 at which V CO goes from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.4 V. Overcharge release voltage (V CL) is defined as the voltage V1 at which V CO goes from "L" to "H" when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference between VCU and VCL. 2. Overdischarge detection voltage, overdischarge release voltage (Test circuit 2) Overdischarge detection voltage (V DL) is defined as the voltage V1 at which V DO goes from "H" to "L" when the voltage V1 is gradually decreased from the star ting conditions of V1 = 3.4 V, V2 = 0 V. Overdischarge release voltage (V DU) is defined as the voltage V1 at which V DO goes from "L" to "H" when setting V2 = 0.01 V and when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is defined as the difference between VDU and VDL. 3. Discharge overcurrent detection voltage, discharge overcurrent release voltage (Test circuit 2) 3. 1 Release voltage of discharge overcurrent status "VDIOV" Discharge overcurrent detection voltage (V DIOV) is defined as the voltage V2 whose delay time for changing V DO from "H" to "L" is discharge overcurrent detection delay time (t DIOV) when the voltage V2 is increased from the starting conditions of V1 = 3.4 V, V2 = 0 V. V DO goes from "L" to "H" when setting V2 = 3.4 V and when the voltage V2 is then gradually decreased to VDIOV typ. or lower. 3. 2 Release voltage of discharge overcurrent status "VRIOV" VDIOV is defined as the voltage V2 whose delay time for changing VDO from "H" to "L" is tDIOV when the voltage V2 is increased from the starting conditi ons of V1 = 3.4 V, V2 = 0 V. Di scharge overcurrent release voltage (V RIOV) is defined as the voltage V2 at which V DO goes from "L" to "H" when setting V2 = 3.4 V and when the voltage V2 is then gradually decreased. 4. Load short-circuiting detection voltage (Test circuit 2) Load short-circuiting detection voltage (VSHORT) is defined as the voltage V2 whose delay time for changing VDO from "H" to "L" is load short-circuiting detection delay time (t SHORT) when the voltage V2 is increased from the starting conditions of V1 = 3.4 V, V2 = 0 V. 5. Charge overcurrent detection voltage (Test circuit 2) Charge overcurrent detection voltage (VCIOV) is defined as the voltage V2 whose delay time for changing VCO from "H" to "L" is charge overcurrent detection delay time (tCIOV) when the voltage V2 is decreased from the starting conditions of V1 = 3.4 V, V2 = 0 V. 6. Current consumption during operation (Test circuit 3) The current consumption during operation (I OPE) is the current that fl ows through the VDD pin (I DD) under the set conditions of V1 = 3.4 V and V2 = 0 V.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 7. Current consumption during power-down, current consumption during overdischarge (Test circuit 3) 7. 1 With power-down function The current consumption during power-down (IPDN) is IDD under the set conditions of V1 = V2 = 1.5 V. 7. 2 Without power-down function The current consumption during overdischarge (IOPED) is IDD under the set conditions of V1 = V2 = 1.5 V. 8. Resistance between VDD pin and VM pin (Test circuit 3) RVMD is the resistance between VDD pin and VM pin under the set conditions of V1 = 1.8 V, V2 = 0 V. 9. Resistance between VM pin and VSS pin (Release condition of discharge overcurrent status "load disconnection") (Test circuit 3) RVMS is the resistance between VM pin and VSS pin under the set conditions of V1 = 3.4 V, V2 = 1.0 V. 10. CO pin resistance "H" (Test circuit 4) The CO pin resistance "H" (RCOH) is the resistance between VDD pin and CO pin under the set conditions of V1 = 3.4 V, V2 = 0 V, V3 = 3.0 V. 11. CO pin resistance "L" (Test circuit 4) The CO pin resistance "L" (RCOL) is the resistance between VM pin and CO pin under the set conditions of V1 = 4.7 V, V2 = 0 V, V3 = 0.4 V. 12. DO pin resistance "H" (Test circuit 4) The DO pin resistance "H" (RDOH) is the resistance between VDD pin and DO pin under the set conditions of V1 = 3.4 V, V2 = 0 V, V4 = 3.0 V. 13. DO pin resistance "L" (Test circuit 4) The DO pin resistance "L" (RDOL) is the resistance between VSS pin and DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.4 V. 14. Overcharge detection delay time (Test circuit 5) The overcharge detection delay time (tCU) is the time needed for VCO to go to "L" just after the voltage V1 increases and exceeds VCU under the set conditions of V1 = 3.4 V, V2 = 0 V. 15. Overdischarge detection delay time (Test circuit 5) The overdischarge detection delay time (tDL) is the time needed for VDO to go to "L" after the voltage V1 decreases and falls below VDL under the set conditions of V1 = 3.4 V, V2 = 0 V.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series 16. Discharge overcurrent detection delay time (Test circuit 5) The discharge overcurrent detection delay time (t DIOV) is the time needed for V DO to go to "L" after the voltage V2 increases and exceeds VDIOV under the set conditions of V1 = 3.4 V, V2 = 0 V. 17. Load short-circuiting detection delay time (Test circuit 5) The load short-circuiting detection delay time (t SHORT) is the time needed for V DO to go to "L" after the voltage V2 increases and exceeds VSHORT under the set conditions of V1 = 3.4 V, V2 = 0 V. 18. Charge overcurrent detection delay time (Test circuit 5) The charge overcurrent detection delay time (t CIOV) is the time needed for V CO to go to "L" after the voltage V2 decreases and falls below VCIOV under the set conditions of V1 = 3.4 V, V2 = 0 V. 19. 0 V battery charge starting charger voltage (0 V battery charge function "available") (Test circuit 2) The 0 V battery charge starting charger voltage (V 0CHA) is defined as the absolute va lue of voltage V2 at which V CO goes to "H" (VCO = VDD) when the voltage V2 is gradually decreased from the starting condition of V1 = V2 = 0 V. 20. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable") (Test circuit 2) The 0 V battery charge inhibition battery voltage (V 0INH) is defined as the voltage V1 at which V CO goes to "L" (V CO = VVM) when the voltage V1 is gradually decreased, after setting V1 = 1.9 V, V2 = −4.0 V.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Operation Remark 1. Refer to " Battery Protection IC Connection Example". 2. Unless otherwise specified, the VM pin voltage is based on VSS. 1. Normal status The S-8240B Series monitors the voltage of the battery connected between VDD pin and VSS pin, the voltage between VM pin and VSS pin to control charging and discharging. When the battery voltage is in the range from overdischarge detection voltage (V DL) to overcharge detection voltage (V CU), and the VM pin voltage is in the range from charge overcurrent detection voltage (V CIOV) to discharge overcurrent detection voltage (V DIOV), the S-8240B Series turns both the charge and discharge control FETs on. This condition is called the normal status, and in this condition charging and discharging can be carried out freely. The resistance between VDD pin and VM pin (R VMD), and the resistance between VM pin and VSS pin (R VMS) are not connected in the normal status. Caution After the battery is connect ed, discharging may not be carried out. In this case, the S-8240B Series becomes the normal status by connecting a charger. 2. Overcharge status 2. 1 VCL ≠ VCU (Product in which overcharge release voltage differs from overcharge detection voltage) When the battery voltage becomes higher than V CU during charging in the normal st atus and the condition continues for the overcharge detection delay time (t CU) or longer, the S-8240B Series turn s the charge contro l FET off to stop charging. This condition is called the overcharge status. The overcharge status is released in the following two cases. (1) In the case that the VM pin voltage is lower than VDIOV, the S-8240B Series releases the overcharge status when the battery voltage falls below overcharge release voltage (VCL). (2) In the case that the VM pin vo ltage is equal to or higher than V DIOV, the S-8240B Series releases the overcharge status when the battery voltage falls below V CU. When the discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises by the V f voltage of the parasitic dio de than the VSS pin voltage, be cause the discharge current flows through the parasitic diode in the charge control FET. If this VM pin voltage is equal to or higher than V DIOV, the S-8240B Series releases the overcharge status when the battery voltage is equal to or lower than VCU. Caution If the battery is charged to a voltage higher than V CU and the battery voltage does not fall below V CU even when a heavy load is connected, discharge overcurrent detection and load short-circuiting detection do not function until the battery voltage falls below V CU. Since an actual battery has an internal impedance of tens of m Ω, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and discharge overcurrent detection and load short-circuiting detection function. 2. 2 V CL = VCU (Product in which overcharge release voltage is the same as overcharge detection voltage) When the battery voltage becomes higher than V CU during charging in the normal st atus and the condition continues for the overcharge detection delay time (t CU) or longer, the S-8240B Series turn s the charge contro l FET off to stop charging. This condition is called the overcharge status. In the case that the VM pin voltage is equal to or higher than 0 V typ., the S-8240B Series releases the overcharge status when the battery voltage falls below VCU. Caution 1. If the battery is charged to a voltage higher than V CU and the battery voltage does not fall below V CU even when a heavy load is connected, discharge overcurrent detection and load short-circuiting detection do not function until the battery voltage falls below V CU. Since an actual battery has an internal impedance of tens of m Ω, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and discharge overcurrent detection and load short-circuiting detection function. 2. When a charger is connected after overcharge detection, the overcharge status is not released even if the battery voltage is below V CL. The overcharge status is released when the VM pin voltage goes over 0 V typ. by removing the charger.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 3. Overdischarge status When the battery voltage falls below V DL during discharging in the normal stat us and the condition continues for the overdischarge detection delay time (t DL) or longer, the S-8240B Series turns the discharge control FET off to stop discharging. This condition is called the overdischarge status. Under the overdischarge status, VDD pin and VM pin are shorted by R VMD in the S-8240B Series. The VM pin voltage is pulled up by RVMD. RVMS is not connected in the overdischarge status. 3. 1 With power-down function Under the overdischarge status, when voltage difference between VDD pin and VM pin is 0.8 V typ. or lower, the power-down function works and the current consumption is reduced to the current consumption during power-down (IPDN). By connecting a battery charger, the power-down function is released when the VM pin voltage is 0.7 V typ. or lower.
- When a battery is not connected to a charger and the VM pin voltage ≥ 0.7 V typ., the S-8240B Series maintains the overdischarge status even when the battery voltage reaches VDU or higher.
- When a battery is connected to a charger and 0.7 V typ. > the VM pin voltage > 0 V typ., the battery voltage reaches VDU or higher and the S-8240B Series releases the overdischarge status.
- When a battery is connected to a charger and 0 V typ. ≥ the VM pin voltage, the battery voltage reaches V DL or higher and the S-8240B Series releases the overdischarge status. 3. 2 Without power-down function The power-down function does not work even when voltage difference between VDD pin and VM pin is 0.8 V typ. or lower.
- When a battery is not connected to a charger and the VM pin voltage ≥ 0.7 V typ., the battery voltage reaches V DU or higher and the S-8240B Series releases the overdischarge status.
- When a battery is connected to a charger and 0.7 V typ. > the VM pin voltage > 0 V typ., the battery voltage reaches VDU or higher and the S-8240B Series releases the overdischarge status.
- When a battery is connected to a charger and 0 V typ. ≥ the VM pin voltage, the battery voltage reaches V DL or higher and the S-8240B Series releases the overdischarge status. 4. Discharge overcurrent status (discharge overcurrent, load short-circuiting) When a battery in the normal status is in the status where the VM pin voltage is equal to or higher than V DIOV because the discharge current is equal to or hi gher than the specified val ue and the status lasts for the discharge overcurrent detection delay time (t DIOV) or longer, the discharge control FET is turned off and discharging is stopped. This status is called the discharge overcurrent status. 4. 1 Release condition of discharge overcurrent status "load disconnection" and release voltage of discharge overcurrent status "VDIOV" Under the discharge overcurrent status , VM pin and VSS pin are shorted by R VMS in the S-8240B Series. However, the VM pin voltage is the VDD pin vo ltage due to the load as long as the load is connected. When the load is disconnected, VM pin returns to the VSS pin voltage. When the VM pin voltage returns to VDIOV or lower, the S-8240B Series releases the discharge overcurrent status. RVMD is not connected in the discharge overcurrent status. 4. 2 Release condition of discharge overcurrent status "load disconnection" and release voltage of discharge overcurrent status "VRIOV" Under the discharge overcurrent status , VM pin and VSS pin are shorted by R VMS in the S-8240B Series. However, the VM pin voltage is the VDD pin voltage due to the load as long as the load is connected. When the load is disconnected, VM pin returns to the VSS pin voltage. When the VM pin voltage returns to VRIOV or lower, the S-8240B Series releases the discharge overcurrent status. RVMD is not connected in the discharge overcurrent status. 4. 3 Release condition of discharge overcurrent status "charger connection" Under the discharge overcurrent status, VM pin and VDD pin are shorted by RVMD in the S-8240B Series. When a battery is connected to a charger and the VM pin voltage returns to V DIOV or lower, the S-8240B Series releases the discharge overcurrent status. R VMS is not connected in the discharge overcurrent status.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series 5. Charge overcurrent status When a battery in the normal status is in the status where the VM pin vo ltage is equal to or lower than VCIOV because the charge current is equal to or higher than the specified value and t he status lasts for the c harge overcurrent detection delay time (tCIOV) or longer, the charge control FET is turned off and char ging is stopped. This status is called the charge overcurrent status. The S-8240B Series releases the charge over current status when the VM pin voltag e returns to 0 V typ. or higher by removing the charger. The charge overcurrent detection does not function in the overdischarge status. 6. 0 V battery charge function "available" This function is used to recharge a battery whose voltage is 0 V due to self-discharge. When the 0 V battery charge starting charger voltage (V 0CHA) or a higher voltage is applied between the EB + and EB − pins by connecting a charger, the charge control FET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charge control FET becomes equal to or higher than the threshold voltage due to the charger volt age, the charge control FET is turned on to start charging. At this time, the discharge control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes equal to or higher than V DL, the S-8240B Series enters the normal status. Caution 1. Some battery providers do not recommend charging for a completely self-discharged lithium-ion rechargeable battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function. 2. The 0 V battery charge function has higher priority than the charge overcurrent detection function. Consequently, a product in which use of the 0 V battery charge function is enabled charges a battery forcibly and the charge overcurrent cannot be detected when the battery voltage is lower than V DL. 7. 0 V battery charge function "unavailable" This function inhibits recharging when a battery that is inte rnally short-circuited (0 V battery) is connected. When the battery voltage is the 0 V battery charge inhibition battery voltage (V 0INH) or lower, the charge control FET gate is fixed to the EB− pin voltage to inhibit charging. When the battery voltage is V0INH or higher, charging can be performed. Caution Some battery providers do not recommend charging for a completely self-discharged lithium-ion rechargeable battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 8. Delay circuit The detection delay times are determined by dividing a clock of approximately 4 kHz by the counter. Remark tDIOV and t SHORT start when V DIOV is detected. When V SHORT is detected over t SHORT after V DIOV, the S-8240B Series turns the discharge control FET off within tSHORT from the time of detecting VSHORT. DO pin voltage VM pin voltage VDD VDD Time VDIOV VSS VSS VSHORT tSHORT Time tD 0 ≤ tD ≤ tSHORT Figure 10
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Timing Charts 1. Overcharge detection, overdischarge detection VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage VSS CO pin voltage VDD DO pin voltage VSS Charger connection Load connection Status*1 VDIOV VSS VM pin voltage VDD VEB− VDD VCIOV VEB− Overdischarge detection delay time (tDL) Overcharge detection delay time (tCU) *1. (1): Normal status (2): Overcharge status (3): Overdischarge status Figure 11
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 2. Discharge overcurrent detection 2. 1 Release condition of discharge overcurrent status "load disconnection" VRIOV VDD VSS VSHORT (1) (2) (1) (1)(2) VDIOV VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage VSS CO pin voltage VDD DO pin voltage VSS Load connection Status*1 VM pin voltage VDD Discharge overcurrent detection delay time (tDIOV) Load short-circuiting detection delay time (tSHORT) *1. (1): Normal status (2): Discharge overcurrent status Figure 12
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series 2. 2 Release condition of discharge overcurrent status "charger connection" VDD VSS VSHORT VDIOV VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage VSS CO pin voltage VDD DO pin voltage VSS Load connection VM pin voltage VDD VCIOV Charger connection VEB− (1) (2) (1) (1)(2) Status*1 VRIOV Discharge overcurrent detection delay time (tDIOV) Load short-circuiting detection delay time (tSHORT) *1. (1): Normal status (2): Discharge overcurrent status Figure 13
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 3. Charge overcurrent detection (2) Load connection Overdischarge detection delay time (tDL) (1) (1) (2) VDD DO pin voltage VSS VDD VSS CO pin voltage VDD VSS VM pin voltage VCIOV Status*1 (3) (1) Charger connection VEB− VEB− Charge overcurrent detection delay time (tCIOV) VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage Charge overcurrent detection delay time (tCIOV) *1. (1): Normal status (2): Charge overcurrent status (3): Overdischarge status Figure 14
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Battery Protection IC Connection Example Battery C1 VSS DO VDD CO VM S-8240B Series FET1 FET2 EB− EB+ Figure 15 Table 11 Constants for External Components Symbol Part Purpose Min. Typ. Max. Remark FET1 N-channel MOS FET Discharge control − − − Threshold voltage ≤ Overdischarge detection voltage*1 FET2 N-channel MOS FET Charge control − − − Threshold voltage ≤ Overdischarge detection voltage R1 Resistor ESD protection, For power fluctuation 270 Ω 330 Ω 1 k Ω − C1 Capacitor For power fluctuation 0.068 μF 0.1 μF 1.0 μF Caution should be exercised when setting VDIOV ≤ 20 mV, VCIOV ≥ −20 mV.*2 R2 Resistor ESD protection, Protection for reverse connection of a charger 300 Ω 470 Ω 4 k Ω Caution should be exercised when an FET with a large gate capacitance is used. *1. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected. *2. When setting V DIOV ≤ 20 mV, V CIOV ≥ −20 mV for power fluctuation protection, the condition of R1 × C1 ≥ 47 μF • Ω should be met. *3. If an FET with a gate capacitance equal to or more than 5 nF is used, charge overcurrent detection voltage may become lower when R2 resistance is large. R2 resistance should be set to a smaller value when an FET with a gate capacitance equal to or more than 5 nF is used. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above a nd the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant.
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 Precautions
- The application conditions for the input voltage, output voltage, and load curr ent should not exceed the package power dissipation.
- Do not apply an electrostatic discharge to this IC that ex ceeds the performance ratings of the built-in electrostatic protection circuit.
- SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Characteristics (Typical Data) 1. Current consumption 1. 1 IOPE vs. Ta 1. 2 IPDN vs. Ta 4.0 IOPE [A] 40 85 75 50025 Ta [C] 0.0 3.0 2.0 1.0 0.10 IPDN [A] 40 85 75 50025 Ta [C] 0.00 0.08 0.05 0.03 1. 3 IOPED vs. Ta 1.0 IOPED [A] 40 85 75 50 25 025 Ta [C] 0.0 0.8 0.6 0.4 0.2 1. 4 IOPE vs. VDD 1. 4. 1 With power-down function 1. 4. 2 Without power-down function 4.0 IOPE [A] VDD [V] 0.0 3.0 2.0 1.0 5 4 3 2 1 4.0 IOPE [A] VDD [V] 0.0 3.0 2.0 1.0 5 4 3 2 1
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 2. Detection voltage 2. 1 VCU vs. Ta 2. 2 VCL vs. Ta 4.46 VCU [V] 40 85 75 50 25 025 Ta [C] 4.38 4.44 4.42 4.40 4.30 VCL [V] 40 85 75 50 25 025 Ta [C] 4.14 4.26 4.22 4.18 2. 3 VDL vs. Ta 2. 4 VDU vs. Ta 2.60 VDL [V] 40 85 75 50 25 025 Ta [C] 2.40 2.55 2.50 2.45 3.04 VDU [V] 40 85 75 50 25 025 Ta [C] 2.76 2.97 2.90 2.83 2. 5 VDIOV vs. Ta 2. 6 VSHORT vs. Ta 0.024VDIOV [V] 40 85 75 50 25 025 Ta [C] 0.016 0.022 0.020 0.018 0.11 VSHORT [V] 40 85 75 50 25 025 Ta [C] 0.03 0.09 0.07 0.05 2. 7 VCIOV vs. Ta 0.016VCIOV [V] 40 85 75 50 25 025 Ta [C] 0.024 0.018 0.020 0.022
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series 3. Delay time 3. 1 tCU vs. Ta 3. 2 tDL vs. Ta 2.5 tCU [s] 40 85 75 50 25 025 Ta [C] 0.0 2.0 1.5 1.0 0.5 160 tDL [ms] 40 85 75 50 25 025 Ta [C] 120 3. 3 tDIOV vs. VDD 3. 4 tDIOV vs. Ta tDIOV [ms] 2.6 4.2 VDD [V] 3.83.43.0 tDIOV [ms] 40 85 75 50 25 025 Ta [C] 3. 5 tSHORT vs. VDD 3. 6 tSHORT vs. Ta 2.6 4.2 VDD [V] 3.83.43.0 800 600 400 tSHORT [s] 200 800 40 85 75 50 25 025 Ta [C] 600 400 200 tSHORT [s] 3. 7 tCIOV vs. VDD 3. 8 tCIOV vs. Ta tCIOV [ms] VDD [V] 4.23.83.02.6 3.4 40 85 75 50 25 025 Ta [C] tCIOV [ms]
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 4. Output resistance 4. 1 RCOH vs. VCO 4. 2 RCOL vs. VCO RCOH [k] VCO [V] 4 3 2 1 RCOL [k] VCO [V] 4 3 2 1 4. 3 RDOH vs. VDO 4. 4 RDOL vs. VDO RDOH [k] VDO [V] 4 3 2 1 RDOL [k] VDO [V] 4 3 2 1
BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series Marking Specifications 1. SNT-6A Top view 13 2 64 5 (1) (2) (3) (4) (5) (6) (1) to (3): Product code (refer to Product name vs. Product code) (4) to (6): Lot number Product name vs. Product code Product Name Product Code (1) (2) (3) S-8240BAA-I6T1U 5 4 A S-8240BAB-I6T1U 5 4 B S-8240BAE-I6T1U 5 4 E
BATTERY PROTECTION IC FOR 1-CELL PACK S-8240B Series Rev.1.0_00 2. HSNT-6 (1212) 13 2 465 Top view (1) (2) (3) (4) (5) (1) to (3): Product code (refer to Product name vs. Product code) (4), (5): Lot number Product name vs. Product code Product Name Product Code (1) (2) (3) S-8240BAA-A6T2U 5 4 A S-8240BAB-A6T2U 5 4 B
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Disclaimers (Handling Precautions) 1. All the information described herei n (product data, specifications, figur es, tables, programs, algorithms and application circuit examples, etc.) is cu rrent as of publishing dat e of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or infringement of third-party intellectual property rights and any other rights due to the use of the information described herein. 3. SII Semiconductor Corporation is not responsible for da mages caused by the incorrect information described herein. 4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. SII Semiconductor Corporation is not re sponsible for damages caused by failu res and/or accidents, etc. that occur due to the use of products outside their specified ranges. 5. When using the products described herei n, confirm their applicatio ns, and the laws and regulat ions of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products described herein must not be used or prov ided (exported) for the purposes of the development of weapons of mass destruction or militar y use. SII Semiconductor Corporation is not responsible for any provision (export) to those whose purpose is to develop, manufactur e, use or store nuclear, biol ogical or chemical weapons, missiles, or other military use. 8. The products described herein are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equi pment, disaster prevention sy stems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation. Especially, the products described her ein cannot be used for life support dev ices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of these products s hould therefore take responsibility to gi ve thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products described herein are not designed to be radi ation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products described herein do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Take care when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright info rmation and know-how of SII Semiconductor Corporation. The information described herein does not convey any lic ense under any intellectual property rights or any other rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information described herein for the purpose of disclosing it to a thir d-party without the express permission of SII Semiconductor Corporation is strictly prohibited. 14. For more details on the information de scribed herein, contact our sales office. 1.0-2016.01 www.sii-ic.com