S8211C

Seiko Instruments Inc

High-accuracy voltage detection circuit

Manufacturer: Seiko Instruments Inc

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www.sii-ic.com BATTERY PROTECTION IC FOR 1-CELL PACK © Seiko Instruments Inc., 2004-2015 Rev.7.7_00 Seiko Instruments Inc. 1 The S-8211C Series is a protection IC for 1-cell lithium-i on / lithium polymer rechargeable battery and includes high- accuracy voltage detection circuits and delay circuits. The S-8211C Series is suitable for protecting 1-cell lithiu m-ion / lithium polymer rechargeable battery packs from overcharge, overdischarge, and overcurrent.  Features

High-accuracy voltage detection circuit Overcharge detection voltage 3.9 V to 4.5 V (5 mV step) Accuracy ±25 mV (Ta = +25°C) Accuracy ±30 mV (Ta = −5°C to +55°C) Overcharge release voltage 3.8 V to 4.43 V P PAccuracy ±50 mV Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV Overdischarge release voltage 2.0 V to 3.4 V P PAccuracy ±100 mV Discharge overcurrent detection voltage 0. 05 V to 0.30 V (10 mV step) Accuracy ±15 mV Load short-circuiting detection voltage 0.5 V (fixed) Accuracy ±200 mV Charge overcurrent detection voltage −0.1 V (fixed) Accuracy ±30 mV
Detection delay times are generated only by an internal circuit (external capacitors are unnecessary). Accuracy ±20%
High-withstand voltage device is used for charger connection pins (VM pin and CO pin: Absolute maximum rating = 28 V)
0 V battery charge function "available" / "unavailable" is selectable.
Power-down function "available" / "unavailable" is selectable.
Wide operation temperature range Ta = −40°C to +85°C
Low current consumption During operation 3.0 μA typ., 5.5 μA max. (Ta = +25°C) During power-down 0.2 μA max. (Ta = +25°C)
Lead-free, Sn 100%, halogen-freeP *1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.) *2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.) *3. Refer to "  Product Name Structure" for details.  Applications
Lithium-ion rechargeable battery pack
Lithium polymer rechargeable battery pack  Packages
SOT-23-5
SNT-6A

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 2  Block Diagram VM VSS VDD CO DO Overcharge detection comparator Discharge overcurrent detection comparator Load short-circuiting detection comparator Output control circuit Charge overcurrent detection comparator RVMD RVMS Charger detection circuit

0 V battery charge /

Remark All diodes shown in figure are parasitic diodes. Figure 1

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 3  Product Name Structure 1. Product name 1. 1 SOT-23-5 S-8211C xx - M5T1 x Serial code*2 Sequentially set from AA to ZZ Package name (abbreviation) and IC packing specifications*1 M5T1: SOT-23-5, Tape Environmental code U: Lead-free (Sn 100%), halogen-free G: Lead-free (for details, please contact our sales office) *1. Refer to the tape drawing. *2. Refer to "3. Product name list". 1. 2 SNT-6A S-8211C xx - I6T1 U Serial code*2 Sequentially set from AA to ZZ Package name (abbreviation) and IC packing specifications*1 I6T1: SNT-6A, Tape Environmental code U: Lead-free (Sn 100%), halogen-free *1. Refer to the tape drawing. *2. Refer to "3. Product name list". 2. Packages Table 1 Package Drawing Codes Package Name Dimension Tape Reel Land SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD − SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 4 3. Product name list 3. 1 SOT-23-5 Table 2 Product Name Over- charge Detection Voltage [VCU] Over- charge Release Voltage [VCL] Over- discharge Detection Voltage [VDL] Over- discharge Release Voltage [VDU] Discharge Overcurrent Detection Voltage [VDIOV]

0 V Battery

*1. Refer to Table 4 about the details of the delay time combinations. *2. The charge overcurrent detection voltage: −0.15 V ± 0.03 V (Ta = +25°C) Remark 1. Please contact our sales office for the products with de tection voltage value other than those specified above. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 5 3. 2 SNT-6A Table 3 (1 / 2) Product Name Over- charge Detection Voltage [VCU] Over- charge Release Voltage [VCL] Over- discharge Detection Voltage [VDL] Over- discharge Release Voltage [VDU] Discharge Overcurrent Detection Voltage [VDIOV]

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 6 Table 3 (2 / 2) Product Name Over-charge Detection Voltage [VCU] Over- charge Release Voltage [VCL] Over- discharge Detection Voltage [VDL] Over- discharge Release Voltage [VDU] Discharge Overcurrent Detection Voltage [VDIOV] *1. Refer to Table 4 about the details of the delay time combinations. *2. The charge overcurrent detection voltage: −0.15 V ± 0.03 V (Ta = +25°C) Remark Please contact our sales office for the products with de tection voltage value other than those specified above.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 7 Table 4 Delay Time Combination Overcharge Detection Delay Time [tCU] Overdischarge Detection Delay Time [tDL] Discharge Overcurrent Detection Delay Time [tDIOV] Load Short-circuiting Detection Delay Time [tSHORT] Charge Overcurrent Detection Delay Time [tCIOV] (1) 1.2 s 150 ms 9 ms 300 μs 9 ms (2) 1.2 s 150 ms 9 ms 560 μs 9 ms (3) 143 ms 38 ms 18 ms 300 μs 9 ms (4) 1.2 s 150 ms 18 ms 300 μs 9 ms (5) 1.2 s 38 ms 9 ms 300 μs 9 ms (6) 1.2 s 150 ms 4.5 ms 300 μs 9 ms (7) 573 ms 150 ms 4.5 ms 300 μs 4.5 ms (8) 1.2 s 75 ms 9 ms 300 μs 9 ms (9) 1.2 s 300 ms 9 ms 300 μs 9 ms Remark The delay times can be changed within the range listed in Table 5. For details, please contact our sales office. Table 5 Delay Time Symbol Selection Range Remark Overcharge detection delay time tCU − 143 ms 573 ms 1.2 sP *1 Select a value from the left. Overdischarge detection delay time tDL 38 ms 75 ms 150 msP *1 300 ms Select a value from the left. Discharge overcurrent detection delay time tDIOV − 4.5 ms 9 msP *1 18 ms Select a value from the left. Load short-circuiting detection delay time t SHORT − − 300 μsP *1 560 μs Select a value from the left. Charge overcurrent detection delay time tCIOV − 4.5 ms 9 msP *1 18 ms Select a value from the left. *1. The value is the delay time of the standard products.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 8  Pin Configurations 1. SOT-23-5 13 2 Top view Figure 2 Table 6 Pin No. Symbol Description

1 VM Voltage detection pin between VM pin and VSS pin

(Overcurrent / charger detection pin)

2 VDD Input pin for positive power supply

3 VSS Input pin for negative power supply

4 DO Connection pin of discharge control FET gate

(CMOS output)

5 CO Connection pin of charge control FET gate

(CMOS output) 2. SNT-6A Top view Figure 3 Table 7 Pin No. Symbol Description

1 NCP

*1 No connection

2 CO Connection pin of charge control FET gate

(CMOS output)

3 DO Connection pin of discharge control FET gate

(CMOS output)

4 VSS Input pin for negative power supply

5 VDD Input pin for positive power supply

6 VM Voltage detection pin between VM pin and VSS pin

(Overcurrent / charger detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD pin or VSS pin.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 9  Absolute Maximum Ratings Table 8 (Ta = +25°C unless otherwise specified) Item Symbol Applied pin Abso lute Maximum Rating Unit Input voltage between VDD pin and VSS pin VDS VDD VSS − 0.3 to VSS + 12 V VM pin input voltage V VM VM V DD − 28 to VDD + 0.3 V DO pin output voltage V DO DO V SS − 0.3 to VDD + 0.3 V CO pin output voltage V CO CO V VM − 0.3 to VDD + 0.3 V Power dissipation SOT-23-5 PD − 250 (When not mounted on board) mW − 600P *1 mW SNT-6A − 400P *1 mW Operation ambient temperature T opr − −40 to +85 °C Storage temperature T stg − −55 to +125 °C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 0 50 100 150 700 400 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 200 600 500 300 100 SNT-6A SOT-23-5 Figure 4 Power Dissipation of Package (When Mounted on Board)

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 10  Electrical Characteristics 1. Except detection delay time (Ta = +25°C) Table 9 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Detection Voltage Overcharge detection voltage VCU 3.90 V to 4.50 V, adjustable VCU − 0.025 VCU VCU + 0.025 V 1 1 3.90 V to 4.50 V, adjustable, Ta = −5°C to +55°C P VCU − 0.03 VCU VCU + 0.03 V 1 1 Overcharge release voltage VCL 3.80 V to 4.43 V, adjustable VCL ≠ VCU VCL − 0.05 VCL VCL + 0.05 V 1 1 VCL = VCU VCL − 0.025 VCL VCL + 0.025 V 1 1 Overdischarge detection voltage VDL 2.00 V to 3.00 V, adjustable VDL − 0.05 VDL VDL + 0.05 V 2 2 Overdischarge release voltage VDU 2.00 V to 3.40 V, adjustable VDU ≠ VDL VDU − 0.10 VDU VDU + 0.10 V 2 2 VDU = VDL VDU − 0.05 VDU VDU + 0.05 V 2 2 Discharge overcurrent detection voltage VDIOV 0.05 V to 0.30 V, adjustable VDIOV − 0.015 VDIOV VDIOV + 0.015 V 3 2 Load short-circuiting detection voltage P *2 VSHORT − 0.30 0.50 0.70 V 3 2 Charge overcurrent detection voltage VCIOV − −0.13 −0.1 −0.07 V 4 2

0 V Battery Charge Function

0 V battery charge starting charger voltage V0CHA 0 V battery charge function

"available" 1.2 − − V 11 2

0 V battery charge inhibition battery voltage V0INH 0 V battery charge function

"unavailable" − − 0.5 V 12 2 Internal Resistance Resistance between VM pin and VDD pin RVMD V DD = 1.8 V, VVM = 0 V 100 300 900 kΩ 6 3 Resistance between VM pin and VSS pin RVMS V DD = 3.5 V, VVM = 1.0 V 10 20 40 k Ω 6 3 Input Voltage Operation voltage between VDD pin and VSS pin VDSOP1 − 1.5 − 8 V − − Operation voltage between VDD pin and VM pin VDSOP2 − 1.5 − 28 V − − Input Current (With Power-down Function) Current consumption during operation IOPE V DD = 3.5 V, VVM = 0 V 1.0 3.0 5.5 μA 5 2 Current consumption during power-down IPDN V DD = VVM = 1.5 V − − 0.2 μA 5 2 Input Current (Without Power-down Function) Current consumption during operation IOPE V DD = 3.5 V, VVM = 0 V 1.0 3.0 5.5 μA 5 2 Current consumption during overdischarge IOPED V DD = VVM = 1.5 V 0.3 2.0 3.5 μA 5 2 Output Resistance CO pin resistance "H" RCOH V CO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5 5 10 k Ω 7 4 CO pin resistance "L" RCOL V CO = 0.5 V, VDD = 4.5 V, VVM = 0 V 2.5 5 10 k Ω 7 4 DO pin resistance "H" RDOH V DO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5 5 10 k Ω 8 4 DO pin resistance "L" RDOL V DO = 0.5 V, VDD = VVM = 1.8 V 2.5 5 10 k Ω 8 4 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. *2. In any conditions, load short-circuiting detection voltage (V SHORT) is higher than discharge overcurrent detection voltage (VDIOV).

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 11 2. Except detection delay time (Ta = −40°C to +85°CP Table 10 (Ta = −40°C to +85°CP P unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Detection Voltage Overcharge detection voltage V CU 3.90 V to 4.50 V, adjustable VCU − 0.060 VCU VCU + 0.040 V 1 1 Overcharge release voltage V CL 3.80 V to 4.43 V, adjustable VCL ≠ VCU VCL − 0.08 VCL VCL + 0.065 V 1 1 VCL = VCU VCL − 0.06 VCL VCL + 0.04 V 1 1 Overdischarge detection voltage V DL 2.00 V to 3.00 V, adjustable VDL − 0.11 VDL VDL + 0.13 V 2 2 Overdischarge release voltage VDU 2.00 V to 3.40 V, adjustable VDU ≠ VDL VDU − 0.15 VDU VDU + 0.19 V 2 2 VDU = VDL VDU − 0.11 VDU VDU + 0.13 V 2 2 Discharge overcurrent detection voltage VDIOV 0.05 V to 0.30 V, adjustable VDIOV − 0.021 VDIOV VDIOV + 0.024 V 3 2 Load short-circuiting detection voltage P *2 VSHORT − 0.16 0.50 0.84 V 3 2 Charge overcurrent detection voltage VCIOV − −0.14 − 0.1 −0.06 V 4 2 "available" 1.7 − − V 11 2 "unavailable" − − 0.3 V 12 2 Internal Resistance Resistance between VM pin and VDD pin RVMD V DD = 1.8 V, VVM = 0 V 78 300 1310 kΩ 6 3 Resistance between VM pin and VSS pin RVMS V DD = 3.5 V, VVM = 1.0 V 7.2 20 44 kΩ 6 3 Input Voltage Operation voltage between VDD pin and VSS pin VDSOP1 − 1.5 − 8 V − − Operation voltage between VDD pin and VM pin VDSOP2 − 1.5 − 28 V − − Input Current (With Power-down Function) Current consumption during operation IOPE V DD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA 5 2 Current consumption during power-down IPDN V DD = VVM = 1.5 V − − 0.3 μA 5 2 Input Current (Without Power-down Function) Current consumption during operation IOPE V DD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA 5 2 Current consumption during overdischarge IOPED V DD = VVM = 1.5 V 0.2 2.0 3.8 μA 5 2 Output Resistance CO pin resistance "H" RCOH V CO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2 5 15 kΩ 7 4 CO pin resistance "L" RCOL V CO = 0.5 V, VDD = 4.5 V, VVM = 0 V 1.2 5 15 kΩ 7 4 DO pin resistance "H" RDOH V DO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2 5 15 kΩ 8 4 DO pin resistance "L" RDOL V DO = 0.5 V, VDD = VVM = 1.8 V 1.2 5 15 kΩ 8 4 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. *2. In any conditions, load short-circuiting detection voltage (V SHORT) is higher than discharge overcurrent detection voltage (VDIOV).

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 12 3. Detection delay time 3. 1 S-8211CAA, S-8211CAH, S-8211CAI, S-8211C AJ, S-8211CAK, S-8211CAL, S-8211CAM, S-8211CAN, S-8211CAR, S-8211CAS, S-8211CAU, S-8211CAY, S-8211CAZ, S-8211CBA, S-8211CBB, S-8211CBF, S-8211CBH, S-8211CBW, S-8211CCB, S-8211CCD, S-8211CCG, S-8211CCK, S-8211CCN, S-8211CCQ, S-8211CCR, S-8211CCT, S-8211CCV, S-8211CDA, S-8211CDB, S-8211CDC, S-8211CDG, S-8211CDJ, S-8211CDM, S-8211CDN, S-8211CDO Table 11 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 120 150 180 ms 9 5 Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 83 150 255 ms 9 5 Discharge overcurrent detection delay time tDIOV − 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 3. 2 S-8211CAB, S-8211CAV Table 12 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 120 150 180 ms 9 5 Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT − 450 560 670 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time t CU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time t DL − 83 150 255 ms 9 5 Discharge overcurrent detection delay time t DIOV − 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT − 260 560 940 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 13 3. 3 S-8211CAD, S-8211CCW Table 13 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 115 143 172 ms 9 5 Overdischarge detection delay time tDL − 30 38 46 ms 9 5 Discharge overcurrent detection delay time tDIOV − 14.5 18 22 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 82 143 240 ms 9 5 Overdischarge detection delay time tDL − 20 38 65 ms 9 5 Discharge overcurrent detection delay time tDIOV − 10 18 30 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 3. 4 S-8211CAE, S-8211CAT, S-8211CAX, S-8211CBR, S-8211CBV, S-8211CBZ, S-8211CCM, S-8211CCY, S-8211CCZ Table 14 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 120 150 180 ms 9 5 Discharge overcurrent detection delay time tDIOV − 14.5 18 22 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 83 150 255 ms 9 5 Discharge overcurrent detection delay time tDIOV − 10 18 30 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 14 3. 5 S-8211CAF, S-8211CAO, S-8211CAP, S-8211CA Q, S-8211CBD, S-8211CBJ, S-8211CBO, S-8211CCC, S-8211CCF, S-8211CCI, S-8211CCS, S-8211CCU, S-8211CCX, S-8211CDE, S-8211CDF, S-8211CDH, S-8211CDI, S-8211CDK, S-8211CDL Table 15 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 30 38 46 ms 9 5 Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 20 38 65 ms 9 5 Discharge overcurrent detection delay time tDIOV − 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 3. 6 S-8211CAW, S-8211CDD Table 16 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 120 150 180 ms 9 5 Discharge overcurrent detection delay time tDIOV − 3.6 4.5 5.4 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 83 150 255 ms 9 5 Discharge overcurrent detection delay time tDIOV − 2.5 4.5 7.7 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 15 3. 7 S-8211CBN Table 17 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 458 573 687 ms 9 5 Overdischarge detection delay time tDL − 120 150 180 ms 9 5 Discharge overcurrent detection delay time tDIOV − 3.6 4.5 5.4 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 3.6 4.5 5.4 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 334 573 955 ms 9 5 Overdischarge detection delay time tDL − 83 150 255 ms 9 5 Discharge overcurrent detection delay time tDIOV − 2.5 4.5 7.7 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 2.5 4.5 7.7 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 3. 8 S-8211CCE, S-8211CCH, S-8211CCJ Table 18 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 61 75 90 ms 9 5 Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 41 75 128 ms 9 5 Discharge overcurrent detection delay time tDIOV − 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 16 3. 9 S-8211CDP Table 19 Item Symbol Condition Min. Typ. Max. Unit Test Condition Test Circuit Delay Time (Ta = +25°C) Overcharge detection delay time tCU − 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL − 240 300 360 ms 9 5 Discharge overcurrent detection delay time tDIOV − 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT − 240 300 360 μs 10 5 Charge overcurrent detection delay time tCIOV − 7.2 9 11 ms 10 5 Delay Time (Ta = −40°C to +85°C)P Overcharge detection delay time tCU − 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL − 166 300 510 ms 9 5 Discharge overcurrent detection delay time tDIOV − 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT − 150 300 540 μs 10 5 Charge overcurrent detection delay time tCIOV − 5 9 15 ms 10 5 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 17  Test Circuits Caution Unless otherwise specified, the output voltage levels "H" and "L" at CO pin (V CO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to V VM and the DO pin level with respect to VSS. 1. Overcharge detection voltage, overcharge release voltage (Test condition 1, test circuit 1) Overcharge detection voltage (V CU) is defined as the voltage between the VDD pin and VSS pin at which V CO goes from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge release voltage (VCL) is defined as the volt age between the VDD pin and VSS pin at which V CO goes from "L" to "H" when the voltage V1 is then gradually de creased. Overcharge hysteresis voltage (V HC) is defined as the difference between overcharge detection voltage (VCU) and overcharge release voltage (VCL). 2. Overdischarge detection voltage, overdischarge release voltage (Test condition 2, test circuit 2) Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and VSS pin at which VDO goes from "H" to "L" when the voltage V1 is gradually decreas ed from the starting condition of V1 = 3.5 V, V2 = 0 V. Overdischarge release voltage (VDU) is defined as the volt age between the VDD pin and VSS pin at which V DO goes from "L" to "H" when the voltage V1 is then gradu ally increased. Overdischarge hysteresis voltage (VHD) is defined as the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL). 3. Discharge overcurrent detection voltage (Test condition 3, test circuit 2) Discharge overcurrent detection voltage (V DIOV) is defined as the voltage bet ween the VM pin and VSS pin whose delay time for changing V DO from "H" to "L" lies between the minimum and the maximum value of discharge overcurrent delay time when the voltag e V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V. 4. Load short-circuiting detection voltage (Test condition 3, test circuit 2) Load short-circuiting detection voltage (V SHORT) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of load short-circuiting delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V. 5. Charge overcurrent detection voltage (Test condition 4, test circuit 2) Charge overcurrent detection voltage (VCIOV) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VCO from "H" to "L" lies between the minimum and the maximum value of charge overcurrent delay time when the voltage V2 is decreased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V. 6. Current consumption during operation (Test condition 5, test circuit 2) The current consumption during operation (I OPE) is the current that fl ows through the VDD pin (I DD) under the set conditions of V1 = 3.5 V and V2 = 0 V (normal status).

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 18 7. Current consumption during power-down, current consumption during overdischarge (Test condition 5, test circuit 2) 7. 1 With power-down function The current consumption during power-down (I PDN) is the current that flows through the VDD pin (I DD) under the set condition of V1 = V2 = 1.5 V (overdischarge status). 7. 2 Without power-down function The current consumption during overdischarge (I OPED) is the current that flows through the VDD pin (I DD) under the set condition of V1 = V2 = 1.5 V (overdischarge status). 8. Resistance between VM pin and VDD pin (Test condition 6, test circuit 3) The resistance between VM pin and VDD pin (R VMD) is the resistance between VM pin and VDD pin under the set conditions of V1 = 1.8 V, V2 = 0 V. 9. Resistance between VM pin and VSS pin (Test condition 6, test circuit 3) The resistance between VM pin and VSS pin (R VMS) is the resistance between VM pin and VSS pin under the set conditions of V1 = 3.5 V, V2 = 1.0 V. 10. CO pin resistance "H" (Test condition 7, test circuit 4) The CO pin resistance "H" (R COH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 = 3.0 V. 11. CO pin resistance "L" (Test condition 7, test circuit 4) The CO pin resistance "L" (R COL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V, V3 = 0.5 V. 12. DO pin resistance "H" (Test condition 8, test circuit 4) The DO pin resistance "H" (R DOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V4 = 3.0 V. 13. DO pin resistance "L" (Test condition 8, test circuit 4) The DO pin resistance "L" (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V. 14. Overcharge detection delay time (Test condition 9, test circuit 5) The overcharge detection delay time (t CU) is the time needed for V CO to change from "H" to "L" just after the voltage V1 momentarily increases (within 10 μs) from overcharge detection voltage (V CU) − 0.2 V to overcharge detection voltage (VCU) + 0.2 V under the set condition of V2 = 0 V. 15. Overdischarge detection delay time (Test condition 9, test circuit 5) The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (V DL) + 0.2 V to overdischarge detection voltage (VDL) − 0.2 V under the set condition of V2 = 0 V.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 19 16. Discharge overcurrent detection delay time (Test condition 10, test circuit 5) Discharge overcurrent detection delay time (t DIOV) is the time needed for V DO to go to "L" after the voltage V2 momentarily increases (within 10 μs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V. 17. Load short-circuiting detection delay time (Test condition 10, test circuit 5) Load short-circuiting detection delay time (t SHORT) is the time needed for V DO to go to "L" after the voltage V2 momentarily increases (within 10 μs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V. 18. Charge overcurrent detection delay time (Test condition 10, test circuit 5) Charge overcurrent detection delay time (t CIOV) is the time needed for V CO to go to "L" after the voltage V2 momentarily decreases (within 10 μs) from 0 V to − 0.3 V under the set conditions of V1 = 3.5 V, V2 = 0 V. 19. 0 V battery charge starting charger voltage (0 V battery charge function "available") (Test condition 11, test circuit 2) The 0 V charge starting charger voltage (V 0CHA) is defined as the voltage between the VDD pin and VM pin at which VCO goes to "H" (V VM + 0.1 V or higher) when the voltage V2 is gradua lly decreased from the starting condition of V1 = V2 = 0 V. 20. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable") (Test condition 12, test circuit 2) The 0 V battery charge inhibition battery voltage (V 0INH) is defined as the voltage between the VDD pin and VSS pin at which V CO goes to "H" (V VM + 0.1 V or higher) when the voltage V1 is gradually increased from the starting conditions of V1 = 0 V, V2 = −4 V.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 21  Operation Remark Refer to " Battery Protection IC Connection Example". 1. Normal status The S-8211C Series monitors the voltage of the batte ry connected between the VDD pin and VSS pin and the voltage difference between the VM pin and VSS pin to cont rol charging and discharging. When the battery voltage is in the range from overdisc harge detection voltage (V DL) to overcharge detection voltage (V CU), and the VM pin voltage is in the range from the charge overcurrent detection voltage (V CIOV) to discharge overcurrent detection voltage (VDIOV), the S-8211C Series turns both the charging and di scharging control FETs on. This condition is called the normal status, and in this condition charging and discharging can be carried out freely. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (R VMS) between the VM pin and VSS pin are not connected in the normal status. Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short the VM pin and VSS pin, or set the VM pin’s voltage at the level of the charge overcurrent detection voltage (V CIOV) or more and the discharge overcurrent detection voltage (V DIOV) or less by connecting the charger. The S-8211C Series then returns to the normal status. 2. Overcharge status When the battery voltage becomes higher than overcharge detection voltage (V CU) during charging in the normal status and detection continues for the overcharge detection delay time (t CU) or longer, the S-8211C Series turns the charging control FET off to stop charging. This condition is called the overcharge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (R VMS) between the VM pin and VSS pin are not connected in the overcharge status. The overcharge status is released in the following two cases ( (1) and (2) ). (1) In the case that the VM pin voltage is higher t han or equal to the charge ov ercurrent detection voltage (V CIOV), and is lower than the discharge ov ercurrent detection voltage (V DIOV), the S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge release voltage (VCL). (2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV), the S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge detection voltage (VCU). The discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more than the VSS pin voltage due to the V f voltage of the parasitic diode, because the discharge current flows through the parasitic diode in the charging contro l FET. If this VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV), the S-8211C Series releases the overcharge status when the battery voltage is lower than or equal to the overcharge detection voltage (VCU). For the actual application boards, changi ng the battery voltage and the charger voltage simultaneously enables to measure the overcharge release voltage (V CL). In this case, the charger is always necessary to have the equivalent voltage level to the battery voltage. The charger keeps VM pin vo ltage higher than or equal to the charge overcurrent detection voltage (V CIOV) and lower than or equal to the discharge overcurrent detection voltage (V DIOV). The S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge release voltage (VCL). Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (V CU) and the battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is connected, discharge overcurrent detection and load short-circuiting detection do not function until the battery voltage falls below overcharge detection voltage (V CU). Since an actual battery has an internal impedance of tens of m Ω, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and discharge overcurrent detection and load short- circuiting detection function. 2. When a charger is connected after overcharge detection, the overcharge status is not released even if the battery voltage is below overcharge release voltage (V CL). The overcharge status is released when the VM pin voltage goes over the charge overcurrent detection voltage (V CIOV) by removing the charger.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 22 3. Overdischarge status 3. 1 With power-down function When the battery voltage falls below overdischarge detection voltage (V DL) during discharging in the normal status and the detection continues for the overdischarge detection delay time (t DL) or longer, the S-8211C Series turns the discharging control FET off to stop discharging. This c ondition is called the overdischarge status. Under the overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the S-8211C Series (RVMD). When voltage difference between the VM pin and V DD pin then is 1.3 V typ. or lower, the current consumption is reduced to the po wer-down current consumption (I PDN). This condition is called the power-down status. The resistance (R VMS) between the VM pin and VSS pin is not connected in the power-down status and the overdischarge status. The power-down status is released when a charger is connected and the voltage difference between the VM pin and VDD pin becomes 1.3 V typ. or higher. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower than −0.7 V typ., the S-8211C Series releases the overdisc harge status and turns the discharging FET on when the battery voltage reaches overdischarge detection voltage (V DL) or higher. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower than −0.7 V typ., the S-8211C Series releases the over discharge status when the battery voltage reaches overdischarge release voltage (VDU) or higher. 3. 2 Without power-down function When the battery voltage falls below overdischarge detection voltage (V DL) during discharging in the normal status and the detection continues for the overdischarge detection delay time (t DL) or longer, the S-8211C Series turns the discharging control FET off to stop discharging. This c ondition is called the overdischarge status. Under the overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the S-8211C Series (RVMD). The resistance (RVMS) between the VM pin and VSS pin is not connected in the overdischarge status. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower than −0.7 V typ., the S-8211C Series releases the overdisc harge status and turns the discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower than −0.7 V typ., the S-8211C Series releases the over discharge status when the battery voltage reaches overdischarge release voltage (VDU) or higher. 4. Discharge overcurrent status (discharge overcurrent, load short-circuiting) When a battery in the normal status is in the status where the VM pin voltage is equal to or higher than the discharge overcurrent detection voltage (VDIOV) because the discharge current is higher than the specified value and the status lasts for the discharge overcurrent detection delay time (t DIOV), the discharge control FET is turned off and discharging is stopped. This status is called the discharge overcurrent status. In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the S-8211C Series. However, the VM pin voltage is at the V DD potential due to the load as long as the load is connected. When the load is disconnected completely, the VM pin returns to the VSS potential. If the S-8211C Series detects that t he VM pin voltage returns to dischar ge overcurrent detection voltage (V DIOV) or lower, the discharge overcurrent status is restored to the normal status. The S-8211C Series will be restored to the normal status fr om discharge overcurrent detection status even when the VM pin voltage becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger. The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge overcurrent status.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 23 5. Charge overcurrent status When a battery in the normal status is in the status wher e the VM pin voltage is lower than the charge overcurrent detection voltage (V CIOV) because the charge current is higher than the specified val ue and the status lasts for the charge overcurrent detection delay time (t CIOV), the charge control FET is tur ned off and charging is stopped. This status is called the charge overcurrent status. The S-8211C Series will be restored to the normal status from the charge overcurrent status when the VM pin voltage returns to charge overcurrent detection voltage (VCIOV) or higher by removing the charger. The charge overcurrent detection function does not work in the overdischarge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (R VMS) between the VM pin and VSS pin are not connected in the charge overcurrent status. 6. 0 V Battery charge function "available" This function is used to recharge a connected battery wh ose voltage is 0 V due to self-discharge. When the 0 V battery charge starting charger voltage (V 0CHA) or a higher voltage is applied between the EB + and EB − pins by connecting a charger, the charging control FET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn- on voltage due to the charger voltage, th e charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes equa l to or higher than overdischarge release voltage (V DU), the S-8211C Series enters the normal status. Caution 1. Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function. 2. The 0 V battery charge function has higher priority than the charge overcurrent detection function. Consequently, a product in which use of the 0 V battery charge function is enabled charges a battery forcibly and the charge overcurrent cannot be detected when the battery voltage is lower than overdischarge detection voltage (V DL). 7. 0 V Battery charge function "unavailable" This function inhibits recharging when a bat tery that is internally short-circuit ed (0 V battery) is connected. When the battery voltage is the 0 V battery charge inhibition battery voltage (V 0INH) or lower, the charging control FET gate is fixed to the EB − pin voltage to inhibit charging. When the battery vo ltage is the 0 V battery charge inhibition battery voltage (V0INH) or higher, charging can be performed. Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 24 8. Delay circuit The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter. Remark 1. The discharge overcurrent detection delay time (t DIOV) and the load short-circuiting detection delay time (tSHORT) start when the discharge overcurrent detection voltage (V DIOV) is detected. When the load short- circuiting detection voltage (VSHORT) is detected over the load short- circuiting detection delay time (tSHORT) after the detection of discharge overcurrent detection voltage (V DIOV), the S-8211C Series turns the discharging control FET off within the load short-circuiting detection delay time (t SHORT) from the time of detecting VSHORT. DO Pin VM Pin VDD VDD Time VDIOV VSS VSS VSHORT Load short-circuiting detection delay time (tSHORT) Time tD 0 ≤ tD ≤ tSHORT Figure 10 2. With power-down function When any overcurrent is detected and the overcurrent continues fo r longer than the overdischarge detection delay time (tDL) without the load being released, the status changes to the power-down status at the point where the battery voltage falls below overdischarge detection voltage (VDL). When the battery voltage falls below overdischarge detection voltage (V DL) due to overcurrent, the S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is still lower than the over discharge detection voltage (V DL), the S-8211C Series shifts to the power-down status. Without power-down function When any overcurrent is detected and the overcurrent continues fo r longer than the overdischarge detection delay time (tDL) without the load being released, the stat us changes to the overdischarge status at the point where the battery voltage falls below overdischarge detection voltage (VDL). When the battery voltage falls below overdischarge detection voltage (V DL) due to overcurrent, the S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is still lower than the over discharge detection voltage (V DL), the S-8211C Series shifts to the overdischarge status.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 25  Timing Charts 1. Overcharge detection, overdischarge detection VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage VSS CO pin voltage VDD DO pin voltage VSS Charger connection Load connection Status*1 Overcharge detection delay time (tCU) Overdischarge detection delay time (tDL) VDIOV VSS VM pin voltage VDD VEB− VDD VCIOV VEB− *1. (1): Normal status (2): Overcharge status (3): Overdischarge status Remark The charger is assumed to charge with a constant current. Figure 11

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 26 2. Discharge overcurrent detection VDD VSS VSHORT (1) (2) (1) (1) Load short-circuiting detection delay time (tSHORT) (2) VDIOV Discharge overcurrent detection delay time (tDIOV) VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage VSS CO pin voltage VDD DO pin voltage VSS Load connection Status*1 VM pin voltage VDD *1. (1): Normal status (2): Discharge overcurrent status Remark The charger is assumed to charge with a constant current. Figure 12

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 27 3. Charge overcurrent detection VDD DO pin voltage VSS VDD VSS CO pin voltage VDD VSS VM pin voltage VCIOV Status*1 (3) (1) Charger connection VEB− VEB− Charge overcurrent detection delay time (tCIOV) VCU VDU (VDL + VHD) VDL VCL (VCU − VHC) Battery voltage (2) Load connection (1) (1) (2) Overdischarge detection delay time (tDL) Charge overcurrent detection delay time (tCIOV) *1. (1): Normal status (2): Charge overcurrent status (3): Overdischarge status Remark The charger is assumed to charge with a constant current. Figure 13

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 28  Battery Protection IC Connection Example Battery C1 VSS DO VDD CO VM S-8211C Series FET1 FET2 EB− EB+ Figure 14 Table 20 Constants for External Components Symbol Part Purpose Min. Typ. Max. Remark FET1 N-channel MOS FET Discharge control − − − Threshold voltage ≤ Overdischarge detection voltage*1 P Gate to source withstand voltage ≥ Charger voltage P FET2 N-channel MOS FET Charge control − − − Threshold voltage ≤ Overdischarge detection voltage*1 Gate to source withstand voltage ≥ Charger voltage*2 R1 Resistor ESD protection, For power fluctuation 100 Ω 220 Ω 330 Ω Resistance should be as small as possible to avoid lowering the overcharge detection accuracy due to current consumption. C1 Capacitor For power fluctuation 0.022 μF 0.1 μF 1.0 μF Connect a capacitor of 0.022 μF or higher between VDD pin and VSS pin.*4 R2 Resistor Protection for reverse connection of a charger 300 Ω 2 k Ω 2 k Ω Select as large a resistance as possible to prevent current when a charger is connected in reverse. *1. If the threshold voltage of an FET is low, the FET may not cut the charge current. If an FET with a threshold voltage equal to or higher than the overdischarge detection volt age is used, discharging may be stopped before overdischarge is detected. *2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. *3. If a high resistor is connected to R1, the voltage between VDD pin and VSS pin may exceed the absolute maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 100 Ω or higher as R1 for ESD protection. *4. If a capacitor of less than 0.022 μF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be sure to connect a capacitor of 0.022 μF or higher to C1. *5. If a resistor of 2 k Ω or higher is connected to R2, the charge current may not be cut when a high-voltage charger is connected. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 29  Precautions

The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation.
Do not apply an electrostatic discharge to this IC that ex ceeds the performance ratings of the built-in electrostatic protection circuit.
SII claims no responsibility for any and all disputes arisi ng out of or in connection with any infringement by products including this IC of patents owned by a third party.

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 30  Characteristics (Typical Data) 1. Current consumption 1. 1 IOPE vs. Ta 1. 2 I PDN vs. Ta −40 −25 0 25 50 7585 Ta [°C] IOPE [μA] −40 −25 0 25 50 7585 Ta [°C] 0.16 0.14 0.12 0.10 0.08 0.06 IPDN [μA] 0.04 0.02 1. 3 IOPE vs. VDD 0 2 4 6 VDD [V] IOPE [μA] 2. Overcharge detection / release voltage, overdischarge detection / release voltage, overcurrent detection voltage, and delay time 2. 1 VCU vs. Ta 2. 2 V CL vs. Ta −40 −25 0 25 50 75 85 Ta [°C] 4.350 4.345 4.340 4.335 4.330 4.325

4.300 VCU [V]

4.320 4.315 4.310 4.305 −40−25 0 25 50 75 85 Ta [°C] 4.125 4.115 4.105 4.095 4.085 4.075

4.025 VCL [V]

4.065 4.055 4.045 4.035 2. 3 VDU vs. Ta 2. 4 V DL vs. Ta −40 −25 0 25 50 75 85 Ta [°C] 2.95 2.94 2.93 2.92 2.91 2.90

2.85 VDU [V]

2.89 2.88 2.87 2.86 −40 −25 0 25 50 7585 Ta [°C] 2.60 2.58 2.56 2.54 2.52 2.50 2.40 VDL [V] 2.48 2.46 2.44 2.42

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 31 2. 5 tCU vs. Ta 2. 6 t DL vs. Ta −40 −25 0 25 50 7585 Ta [°C] 1.50 1.45 1.40 1.35 1.30 1.25 1.00 tCU [s] 1.20 1.15 1.10 1.05 −40 −25 0 25 50 7585 Ta [°C] 200 190 180 170 160 150 100 tDL [ms] 140 130 120 110 2. 7 VDIOV vs. Ta 2. 8 t DIOV vs. VDD −40 −25 0 25 50 7585 Ta [°C] 0.175 0.170 0.165 0.160 0.155 0.150

0.125 VDIOV [V]

0.145 0.140 0.135 0.130 3.0 3.5 4.0 4.5 VDD [V] tDIOV [ms] 2. 9 tDIOV vs. Ta 2. 10 V CIOV vs. Ta −40 −25 0 25 50 7585 Ta [°C] tDIOV [ms] −40−25 0 25 50 7585 Ta [°C] −0.05 −0.06 −0.07 −0.08 −0.09 −0.10 −0.15 VCIOV [V] −0.11 −0.12 −0.13 −0.14 2. 11 tCIOV vs. VDD 2. 12 t CIOV vs. Ta 3.0 3.5 4.0 4.5 VDD [V] tCIOV [ms] tCIOV [ms] −40−25 0 25 50 7585 Ta [°C]

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 32 2. 13 VSHORT vs. Ta 2. 14 t SHORT vs. VDD 0.75 0.70 0.65 0.60 0.55 0.50

0.25 VSHORT [V]

0.45 0.40 0.35 0.30 −40 −25 0 25 50 7585 Ta [°C] 3.0 3.5 4.0 4.5 VDD [V] 0.65 0.63 0.61 0.59 0.57 0.55 0.45 tSHORT [ms] 0.53 0.51 0.49 0.47 2. 15 tSHORT vs. Ta −40 −25 0 25 50 7585 Ta [°C] 1.0 0.9 0.8 0.7 0.6 0.5 tSHORT [ms] 0.4 0.3 0.2 0.1

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 33 3. CO pin / DO pin 3. 1 ICOH vs. VCO 3. 2 I COL vs. VCO −0.1 −0.2 −0.5 ICOH [mA] −0.3 −0.4 0 1 2 3 4 VCO [V] 0.5 0.4 0.3 ICOL [mA] 0.2 0.1 0 1 2 3 4 VCO [V] 3. 3 IDOH vs. VDO 3. 4 I DOL vs. VDO 0 1 2 3 4 VDO [V] −0.05 −0.10 −0.15 −0.30 IDOH [mA] −0.20 −0.25 0 0.5 1.0 1.5 VDO [V] 0.20 0.15 0.10 IDOL [mA] 0.05

BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.7.7_00 Seiko Instruments Inc. 34  Marking Specifications 1. SOT-23-5 123 Top view (1) (2) (3) (4) (1) to (3): Product code (refer to Product name vs. Product code) (4): Lot number Product name vs. Product code Product Name Product Code (1) (2) (3) S-8211CAA-M5T1x R Z A S-8211CAB-M5T1x R Z B S-8211CAD-M5T1x R Z D S-8211CAE-M5T1x R Z E S-8211CAF-M5T1x R Z F S-8211CAH-M5T1x R Z H S-8211CAI-M5T1x R Z I S-8211CAJ-M5T1x R Z J S-8211CAK-M5T1x R Z K S-8211CAL-M5T1x R Z L S-8211CAM-M5T1x R Z M S-8211CAN-M5T1x R Z N S-8211CAO-M5T1x R Z O S-8211CAP-M5T1x R Z P S-8211CAQ-M5T1x R Z Q S-8211CAR-M5T1x R Z R S-8211CAS-M5T1x R Z S S-8211CAT-M5T1x R Z T Product Name Product Code (1) (2) (3) S-8211CAU-M5T1x R Z U S-8211CAV-M5T1x R Z V S-8211CAY-M5T1x R Z Y S-8211CAZ-M5T1x R Z Z S-8211CBV-M5T1x R 7 V S-8211CCD-M5T1U R 8 D S-8211CCJ-M5T1U R 8 J S-8211CCK-M5T1U R 8 K S-8211CCQ-M5T1U R 8 Q S-8211CCR-M5T1U R 8 R S-8211CCT-M5T1U R 8 T S-8211CCV-M5T1U R 8 V S-8211CCW-M5T1U R 8 W S-8211CDB-M5T1U R 6 B S-8211CDD-M5T1U R 6 D S-8211CDG-M5T1U R 6 G S-8211CDJ-M5T1U R 6 J S-8211CDN-M5T1U R 6 N Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products.

BATTERY PROTECTION IC FOR 1-CELL PACK Rev.7.7_00 S-8211C Series Seiko Instruments Inc. 35 2. SNT-6A Top view 13 2 64 5 (1) (2) (3) (4) (5) (6) (1) to (3): Product code (refer to Product name vs. Product code) (4) to (6): Lot number Product name vs. Product code Product Name Product Code (1) (2) (3) S-8211CAA-I6T1U R Z A S-8211CAB-I6T1U R Z B S-8211CAD-I6T1U R Z D S-8211CAE-I6T1U R Z E S-8211CAF-I6T1U R Z F S-8211CAH-I6T1U R Z H S-8211CAI-I6T1U R Z I S-8211CAJ-I6T1U R Z J S-8211CAK-I6T1U R Z K S-8211CAL-I6T1U R Z L S-8211CAM-I6T1U R Z M S-8211CAN-I6T1U R Z N S-8211CAO-I6T1U R Z O S-8211CAP-I6T1U R Z P S-8211CAQ-I6T1U R Z Q S-8211CAR-I6T1U R Z R S-8211CAS-I6T1U R Z S S-8211CAT-I6T1U R Z T S-8211CAU-I6T1U R Z U S-8211CAV-I6T1U R Z V S-8211CAW-I6T1U R Z W S-8211CAX-I6T1U R Z X S-8211CAY-I6T1U R Z Y S-8211CAZ-I6T1U R Z Z S-8211CBA-I6T1U R 7 A S-8211CBB-I6T1U R 7 B S-8211CBD-I6T1U R 7 D S-8211CBF-I6T1U R 7 F S-8211CBH-I6T1U R 7 H S-8211CBJ-I6T1U R 7 J S-8211CBN-I6T1U R 7 N S-8211CBO-I6T1U R 7 O Product Name Product Code (1) (2) (3) S-8211CBR-I6T1U R 7 R S-8211CBV-I6T1U R 7 V S-8211CBW-I6T1U R 7 W S-8211CBZ-I6T1U R 7 Z S-8211CCB-I6T1U R 8 B S-8211CCC-I6T1U R 8 C S-8211CCD-I6T1U R 8 D S-8211CCE-I6T1U R 8 E S-8211CCF-I6T1U R 8 F S-8211CCG-I6T1U R 8 G S-8211CCH-I6T1U R 8 H S-8211CCI-I6T1U R 8 I S-8211CCJ-I6T1U R 8 J S-8211CCM-I6T1U R 8 M S-8211CCN-I6T1U R 8 N S-8211CCS-I6T1U R 8 S S-8211CCU-I6T1U R 8 U S-8211CCW-I6T1U R 8 W S-8211CCX-I6T1U R 8 X S-8211CCY-I6T1U R 8 Y S-8211CCZ-I6T1U R 8 Z S-8211CDA-I6T1U R 6 A S-8211CDC-I6T1U R 6 C S-8211CDE-I6T1U R 6 F S-8211CDF-I6T1U R 6 E S-8211CDH-I6T1U R 6 H S-8211CDI-I6T1U R 6 I S-8211CDK-I6T1U R 6 K S-8211CDL-I6T1U R 6 L S-8211CDM-I6T1U R 6 M S-8211CDO-I6T1U R 6 O S-8211CDP-I6T1U R 6 P

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X32/X2E/X39/XB1/X30/X2E/X32 /X31/X2E/X39/XB1/X30/X2E/X32 /X30/X2E/X39/X35/XB1/X30/X2E/X31 /X30/X2E/X34/XB1/X30/X2E/X31 /X30/X2E/X31/X36/X20/X2B/X30/X2E/X31 /X20/X2D/X30/X2E/X30/X36/X31/X32/X33 /X34/X35 /X4E/X6F/X2E/X20/X4D/X50/X30/X30/X35/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X31/X2E/X32 /X4D/X50/X30/X30/X35/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X31/X2E/X32 /X53/X4F/X54/X32/X33/X35/X2D/X41/X2D/X50/X4B/X47/X20/X44/X69/X6D/X65/X6E/X73/X69/X6F/X6E/X73 /X6D/X6D

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /XF8/X31/X2E/X35 /X2B/X30/X2E/X31 /X2D/X30 /X32/X2E/X30/XB1/X30/X2E/X30/X35 /XF8/X31/X2E/X30 /X2B/X30/X2E/X32 /X2D/X30 /X34/X2E/X30/XB1/X30/X2E/X31 /X31/X2E/X34/XB1/X30/X2E/X32 /X30/X2E/X32/X35/XB1/X30/X2E/X31 /X33/X2E/X32/XB1/X30/X2E/X32 /X31/X32/X33 /X34/X35 /X4E/X6F/X2E/X20/X4D/X50/X30/X30/X35/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X32/X2E/X31 /X4D/X50/X30/X30/X35/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X32/X2E/X31 /X53/X4F/X54/X32/X33/X35/X2D/X41/X2D/X43/X61/X72/X72/X69/X65/X72/X20/X54/X61/X70/X65 /X46/X65/X65/X64/X20/X64/X69/X72/X65/X63/X74/X69/X6F/X6E /X34/X2E/X30/XB1/X30/X2E/X31/X28/X31/X30/X20/X70/X69/X74/X63/X68/X65/X73/X3A/X34/X30/X2E/X30/XB1/X30/X2E/X32/X29 /X6D/X6D

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/X46/X65/X65/X64/X20/X64/X69/X72/X65/X63/X74/X69/X6F/X6E /X34/X2E/X30/XB1/X30/X2E/X31/X32/X2E/X30/XB1/X30/X2E/X30/X35 /X34/X2E/X30/XB1/X30/X2E/X31 /XF8/X31/X2E/X35 /X2B/X30/X2E/X31 /X20/X2D/X30 /XF8/X30/X2E/X35 /X31/X2E/X38/X35/XB1/X30/X2E/X30/X35 /X30/X2E/X36/X35/XB1/X30/X2E/X30/X35 /X30/X2E/X32/X35/XB1/X30/X2E/X30/X35 /X35/XB0 /X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X6D/X6D /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X50/X47/X30/X30/X36/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X31/X2E/X30 /X53/X4E/X54/X2D/X36/X41/X2D/X41/X2D/X43/X61/X72/X72/X69/X65/X72/X20/X54/X61/X70/X65 /X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X31/X2E/X30 /X2B/X30/X2E/X31 /X20/X2D/X30 /X31/X32 /X34 /X33 /X35/X36

/X31/X32/X2E/X35/X6D/X61/X78/X2E /X39/X2E/X30/XB1/X30/X2E/X33 /XF8/X31/X33/XB1/X30/X2E/X32 /X28/X36/X30/XB0/X29 /X28/X36/X30/XB0/X29 /X51/X54/X59/X2E /X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X30 /X50/X47/X30/X30/X36/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X30 /X45/X6E/X6C/X61/X72/X67/X65/X64/X20/X64/X72/X61/X77/X69/X6E/X67/X20/X69/X6E/X20/X74/X68/X65/X20/X63/X65/X6E/X74/X72/X61/X6C/X20/X70/X61/X72/X74 /X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54/X6D/X6D /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X53/X4E/X54/X2D/X36/X41/X2D/X41/X2D/X52/X65/X65/X6C /X35/X2C/X30/X30/X30/X20

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X6D/X6D /X53/X4E/X54/X2D/X36/X41/X2D/X41/X2D/X4C/X61/X6E/X64/X20/X52/X65/X63/X6F/X6D/X6D/X65/X6E/X64/X61/X74/X69/X6F/X6E /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X50/X47/X30/X30/X36/X2D/X41/X2D/X4C/X2D/X53/X44/X2D/X34/X2E/X31/X4E/X6F/X2E/X20/X50/X47/X30/X30/X36/X2D/X41/X2D/X4C/X2D/X53/X44/X2D/X34/X2E/X31 /X30/X2E/X33/X30/X2E/X32 /X30/X2E/X35/X32 /X31/X2E/X33/X36 /X30/X2E/X35/X32 /X31 /X32 /X43/X61/X75/X74/X69/X6F/X6E /X31/X2E/X20/X44/X6F/X20/X6E/X6F/X74/X20/X64/X6F/X20/X73/X69/X6C/X6B/X73/X63/X72/X65/X65/X6E/X20/X70/X72/X69/X6E/X74/X69/X6E/X67/X20/X61/X6E/X64/X20/X73/X6F/X6C/X64/X65/X72/X20/X70/X72/X69/X6E/X74/X69/X6E/X67/X20/X75/X6E/X64/X65/X72/X20/X74/X68/X65/X20/X6D/X6F/X6C/X64/X20/X72/X65/X73/X69/X6E/X20/X6F/X66/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X2E /X32/X2E/X20/X54/X68/X65/X20/X74/X68/X69/X63/X6B/X6E/X65/X73/X73/X20/X6F/X66/X20/X74/X68/X65/X20/X73/X6F/X6C/X64/X65/X72/X20/X72/X65/X73/X69/X73/X74/X20/X6F/X6E/X20/X74/X68/X65/X20/X77/X69/X72/X65/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X75/X6E/X64/X65/X72/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X20/X73/X68/X6F/X75/X6C/X64/X20/X62/X65/X20/X30/X2E/X30/X33/X20/X6D/X6D /X20/X6F/X72/X20/X6C/X65/X73/X73/X20/X66/X72/X6F/X6D/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X73/X75/X72/X66/X61/X63/X65/X2E /X33/X2E/X20/X4D/X61/X74/X63/X68/X20/X74/X68/X65/X20/X6D/X61/X73/X6B/X20/X61/X70/X65/X72/X74/X75/X72/X65/X20/X73/X69/X7A/X65/X20/X61/X6E/X64/X20/X61/X70/X65/X72/X74/X75/X72/X65/X20/X70/X6F/X73/X69/X74/X69/X6F/X6E/X20/X77/X69/X74/X68/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X2E /X34/X2E/X20/X52/X65/X66/X65/X72/X20/X74/X6F/X20/X22/X53/X4E/X54/X20/X50/X61/X63/X6B/X61/X67/X65/X20/X55/X73/X65/X72/X27/X73/X20/X47/X75/X69/X64/X65/X22/X20/X66/X6F/X72/X20/X64/X65/X74/X61/X69/X6C/X73/X2E /X31/X2E/X20 /X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29 /X32/X2E/X20 /X20/X28/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X29 /X30/X2E/X30/X33/X20/X6D/X6D /X53/X4E/X54 /X31/X2E/X20/X50/X61/X79/X20/X61/X74/X74/X65/X6E/X74/X69/X6F/X6E/X20/X74/X6F/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X77/X69/X64/X74/X68/X20/X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29/X2E /X32/X2E/X20/X44/X6F/X20/X6E/X6F/X74/X20/X77/X69/X64/X65/X6E/X20/X74/X68/X65/X20/X6C/X61/X6E/X64/X20/X70/X61/X74/X74/X65/X72/X6E/X20/X74/X6F/X20/X74/X68/X65/X20/X63/X65/X6E/X74/X65/X72/X20/X6F/X66/X20/X74/X68/X65/X20/X70/X61/X63/X6B/X61/X67/X65/X20/X20/X28/X20/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X20/X29/X2E /X31/X2E /X32/X2E/X20 /X28/X31/X2E/X33/X30/X20/X6D/X6D/X20/X7E/X20/X31/X2E/X34/X30/X20/X6D/X6D/X29 /X28/X30/X2E/X32/X35/X20/X6D/X6D/X20/X6D/X69/X6E/X2E/X20/X2F/X20/X30/X2E/X33/X30/X20/X6D/X6D/X20/X74/X79/X70/X2E/X29

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Product Information

S8211C specifications and overview.

Summary

High-accuracy voltage detection circuit

Description

High-accuracy voltage detection circuit

Source title S8211C Datasheet(PDF) - Seiko Instruments Inc

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