S816

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www.sii-ic.com EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR © Seiko Instruments Inc., 1996-2014 Rev.6.1_00 Seiko Instruments Inc. 1 The S-816 Series, developed using the CMOS technology, is an external transistor type positive voltage regulator which incorporates an overcurrent protection circuit and an ON/OFF circuit. A low drop-out type regulator with an output current ranging from several hundreds of mA to 1 A can be configured with the PNP transistor driven by this IC. Despite the features of the S-816 Series, which is low current consumption, the improvement in its transient response characteristics of the IC with a newly deviced phase compensation circuit made it possible to employ the products of the S-816 Series even in applications where heavy input variation or load variation is experienced. The S-816 Series regulator serves as an ideal power supply unit for portable devices when coupled with the small SOT-23-5 package, providing numerous outstanding features, including low current consumption. Since the S-816 Series can accommodate an input voltage of up to 16 V, it is also suitable when operating via an AC adapter.  Features

• Output voltage: 2.5 V to 6.0 V, selectable in 0.1 V step
• Input voltage: 16 V max.
• Output voltage accuracy: ± 2.0%
• Current consumption: During operation: 30 μA typ., 40 μA max. During power-off: 1 μA max.
• Built-in overcurrent (base current) protection circuit
• Built-in ON/OFF circuit: Ensures long battery life.
• Built-in current source (10 μA): No need for a base-emitter resistance.
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free, Sn 100%, halogen-free*1 *1. Refer to “ Product Name Structure” for details.  Applications
• Power supply for on-board such as battery device for portable telephone, electronic notebook, PDA
• Constant voltage power supply for camera, video equipment and portable communication equipment
• Power supply for CPU
• Post-regulator for switching regulator
• Main regulator in multiple-power supply system  Package
• SOT-23-5

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 2 Seiko Instruments Inc.  Block Diagram EXT VOUT VSS VIN Vref Current Source Overcurrent Protection Circuit Pull-Up Reisitance Error Amplifier Sink Driver ON/OFF Remark 1. To ensure you power cutoff of the external transistor when the device is powered down, the EXT output is pulled up to VIN by a pull-up resistance (approx. 0.5 MΩ) inside the IC. 2. The diode inside the IC is a parasitic diode. Figure 1

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 3  Product Name Structure 1. Product Name S-816A xx A MC - xxx T2 x Environmental code U : Lead-free (Sn 100%), halogen-free G : Lead-free (for details, please contact our sales office) IC direction in tape specifications Product code Package code MC : SOT-23-5 Output voltage 25 to 60 (e.g., when the output voltage is 2.5 V, it is expressed as 25.) *1. Refer to the tape drawing. 2. Package Package Name Drawing Code Package Tape Reel SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD 3. Product Name List Table 1 Output Voltage (V) Product Name Output Voltage (V) Product Name 2.5 V±2.0% S-816A25AMC-BAAT2x 4.3 V±2.0% S-816A43AMC-BAST2x 2.6 V±2.0% S-816A26AMC-BABT2x 4.4 V±2.0% S-816A44AMC-BATT2x 2.7 V±2.0% S-816A27AMC-BACT2x 4.5 V±2.0% S-816A45AMC-BAUT2x 2.8 V±2.0% S-816A28AMC-BADT2x 4.6 V±2.0% S-816A46AMC-BAVT2x 2.9 V±2.0% S-816A29AMC-BAET2x 4.7 V±2.0% S-816A47AMC-BAWT2x 3.0 V±2.0% S-816A30AMC-BAFT2x 4.8 V±2.0% S-816A48AMC-BAXT2x 3.1 V±2.0% S-816A31AMC-BAGT2x 4.9 V±2.0% S-816A49AMC-BAYT2x 3.2 V±2.0% S-816A32AMC-BAHT2x 5.0 V±2.0% S-816A50AMC-BAZT2x 3.3 V±2.0% S-816A33AMC-BAIT2x 5.1 V±2.0% S-816A51AMC-BBAT2x 3.4 V±2.0% S-816A34AMC-BAJT2x 5.2 V±2.0% S-816A52AMC-BBBT2x 3.5 V±2.0% S-816A35AMC-BAKT2x 5.3 V±2.0% S-816A53AMC-BBCT2x 3.6 V±2.0% S-816A36AMC-BALT2x 5.4 V±2.0% S-816A54AMC-BBDT2x 3.7 V±2.0% S-816A37AMC-BAMT2x 5.5 V±2.0% S-816A55AMC-BBET2x 3.8 V±2.0% S-816A38AMC-BANT2x 5.6 V±2.0% S-816A56AMC-BBFT2x 3.9 V±2.0% S-816A39AMC-BAOT2x 5.7 V±2.0% S-816A57AMC-BBGT2x 4.0 V±2.0% S-816A40AMC-BAPT2x 5.8 V±2.0% S-816A58AMC-BBHT2x 4.1 V±2.0% S-816A41AMC-BAQT2x 5.9 V±2.0% S-816A59AMC-BBIT2x 4.2 V±2.0% S-816A42AMC-BART2x 6.0 V±2.0% S-816A60AMC-BBJT2x Remark 1. x: G or U 2. Please select products of environmental code = U for Sn 100%, halogen-free products.

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 4 Seiko Instruments Inc.  Pin Configuration SOT-23-5 Top view 1 2 3 5 4 Figure 2 Table 2 Pin No. Symbol Description

1 EXT Output Pin for Base-Current Control

2 VSS GND Pin

3 ON/OFF ON/OFF Pin (Active "H")

4 VIN IC Power Supply Pin

5 VOUT Output Voltage Monitoring Pin

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 5  Absolute Maximum Ratings Table 3 (Ta=25°C unless otherwise specified) Item Symbol Absolute Maximum Ratings Unit VIN Pin Voltage VIN VSS−0.3 to VSS+18 V VOUT Pin Voltage VOUT VSS−0.3 to VSS+18 V ON/OFF Pin Voltage VON/OFF VSS−0.3 to VSS+18 V EXT Pin Voltage VEXT VSS−0.3 to VIN+0.3 V EXT Pin Current IEXT 50 mA Power Dissipation PD 250 (When not mounted on board) mW 600*1 mW Operation Ambient Temperature Range Topr −40 to +85 °C Storage Temperature Tstg −40 to +125 °C *1. When mounted on board [Mounted on board] (1) Board size : 114.3 mm × 76.2 mm × t1.6 mm (2) Board name : JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. (1) When mounted on board (2) When not mounted on board 0 50 100 150 600 400 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 200 100 300 500 700 0 50 100 150 300 200 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 100 250 150 Figure 3 Power Dissipation of Package

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 6 Seiko Instruments Inc.  Electrical Characteristics Table 4 (Ta=25°C unless otherwise specified) Item Symbol Conditions Min. Typ. Max. Unit Test circuit Input Voltage VIN ⎯ ⎯ ⎯ 16 V 1 Output Voltage VOUT VIN =VOUT +1 V, IOUT =50 mA, VON/OFF ="H" VOUT ×0.98 VOUT VOUT ×1.02 V 1 Maximum Output Current (PNP Drop-Out Voltage *1 ΔVdrop I OUT =100 mA ⎯ 100 ⎯ mV 1 Load Regulation (PNP Output) *1 ΔVOUT V IN =VOUT +1 V, 1 mA < IOUT < 1 A ⎯ ⎯ 60 mV 1 Line Regulation (PNP Output) *1 INOUT OUT V V V Δ • Δ IOUT =50 mA, VOUT +1 V < VIN < 16 Output Voltage Temperature Coefficient Ta VOUT Δ Δ VIN =VOUT +1 V, IOUT =50 mA, VON/OFF ="H", Ta=−40 to 85°C ⎯ ±0.15 ⎯ mV/°C 1 Current Consumption during Operation I SS VIN =VOUT +1 V, VON/OFF ="H" ⎯ 30 40 μA 1 Current Consumption during Power-off I STB VIN =16 V, VON/OFF ="L" ⎯ ⎯ 1 μA 1 EXT Output Source Constant Current I SRC VIN =VOUT +1 V, VON/OFF ="H", VEXT =VOUT, VOUT =VOUT ×0.95 ⎯ −10 ⎯ μA 2 EXT Output Pull-Up Resistance R UP VIN =16 V, VON/OFF ="L" 0.25 0.50 1.00 MΩ 2 EXT Output Sink Current ISINK VIN =VOUT +1 V, VON/OFF ="H", VOUT =VOUT ×0.95 ⎯ 10 ⎯ mA 2 Leakage Current during EXT Output Off I OFF VIN =VEXT =VOUT +1 V, VOUT =0 V, VON/OFF ="L" ⎯ ⎯ 0.1 μA 2 EXT Output Sink Overcurrent Set Value I MAX VIN =VEXT =7 V, VON/OFF ="H", VOUT =VOUT ×0.95 12 16 20 mA 2 ON/OFF Pin Input Voltage VSH VIN =VOUT +1 V, VOUT =0 V, Check VEXT ="L" 2.4 ⎯ ⎯ V VSL VIN =VOUT +1 V, VOUT =0 V, Check VEXT ="H" ⎯ ⎯ 0.3 ON/OFF Pin Input Current ISH VON/OFF =VOUT +1 V ⎯ ⎯ 0.1 μA 2 ISL VON/OFF =0 V ⎯ ⎯ −0.1 *1. The characteristics vary with the associated external components. The characteristics given above are those obtained when the IC is combined with A TOSHIBA Semiconductor & Storage Products Company 2SA1213-Y for the PNP transistor and a 10 μF tantalum capacitor for the output capacitor (CL).

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 9 2.2. Overcurrent Protection Circuit The overcurrent protection function of the S-816 Series monitors the EXT pin sink current (base current of the external PNP transistor) with an overcurrent protection circuit incorporated in the IC, and limits that current (EXT pin sink current). As the load current increases, the EXT pin sink current (base current of the external PNP transistor) also grows larger to maintain the output voltage. The overcurrent protection circuit clamps and limits the EXT pin sink current to the EXT output sink overcurrent set value (I MAX) in order to prevent it from increasing beyond that value. The load current at which the overcurrent protection function works is represented by the following equation: I OUT_MAX = IMAX × hFE In this case, hFE is the DC amplification factor of the external PNP transistor. IOUT_MAX represents the maximum output current of this regulator. If it is attempted to obtain a higher load current, the output voltage will fall. Note that within the overcurrent protection function of this IC, the external PNP transistor may not be able to be protected from collector overcurrents produced by an EXT-GND short-circuiting or other phenomenon occurring outside the IC. To protect the external PNP transistor from such collector overcurrents, it will be necessary to choose a transistor with a larger power dissipation than I OUT_MAX × VIN, or to add an external overcurrent protection circuit. With regard to this external overcurrent protection circuit, refer to "1. Overcurrent Protection Circuit" in " Application Circuits". 2.3. Phase Compensation Circuit The S-816 Series performs phase compensation with a phase compensation circuit, incorporated in the IC, and the ESR (Equivalent Series Resistance) of an output capacitor, to secure stable operation even in the presence of output load variation. A uniquely devised phase compensation circuit has resulted in improved transient response characteristics of the IC, while preserving the same feature of low current consumption. This feature allows the IC to be used in applications where the input variation or load variation is heavy. Because the S-816 Series is designed to perform the phase compensation, utilizing the ESR of an output capacitor, such output capacitor (C L) should always be placed between VOUT and VSS. Since each capacitor to be employed has an optimum range of their own characteristics, be sure to choose components for the IC with your all attention. For details, refer to " Selection of Associated External Components".

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 10 Seiko Instruments Inc.  Selection of Associated External Components 1. External PNP Transistor Select an external transistor according to the conditions of input voltage, output voltage, and output current. A low-saturation voltage PNP transistor with "hFE" ranging from 100 to 300 will be suitable for this IC. The parameters for selection of the external PNP transistor include the maximum collector-base voltage, the maximum collector-emitter voltage, the DC amplification factor (h FE), the maximum collector current and the collector dissipation. The maximum collector-base voltage and the maximum collector-emitter voltage are determined by the input voltage range in each specific application to be employed. You may select a transistor with an input voltage at least several volts higher than the expected maximum input voltage. The DC amplification factor (h FE) affects the maximum output current that can be supplied to the load. With an internal overcurrent protection circuit of this IC, the base current is clamped, and will not exceed the overcurrent set value (IMAX). Select a transistor which is capable of delivering the required maximum output current to the intended application, with hfe and maximum collector current. (Refer to " Overcurrent Protection Circuit") Likewise, select a transistor, based on the maximum output current and the difference between the input and output voltages, with due attention to the collector dissipation. 2. Output Capacitor (CL) The S-816 Series performs phase compensation by an internal phase compensation circuit of IC, and the ESR (Equivalent Series Resistance) of an output capacitor for to secure stable operation even in the presence of output load variation. Therefore, always place a capacitor (C L) of 4.7 μF or more between VOUT and VSS. For stable operation of the S-816 Series, it is essential to employ a capacitor with an ESR having optimum range. Whether an ESR is larger or smaller than that optimum range (approximately 0.1 Ω to 5 Ω), this could produce an unstable output, and cause a possibility of oscillations. For this reason, a tantalum electrolytic capacitor is recommended. When a ceramic capacitor or an OS capacitor having a low ESR is selected, it will be necessary to connect an additional resistance that serves for the ESR in series with the output capacitor, as illustrated in Figure 9. The resistance value that needs to be added will be from 0.1 Ω to 5 Ω, but this value may vary depends on the service conditions, and should be defined through careful evaluation in advance. In general, our recommendation is 0.3 Ω or so. An aluminum electrolytic capacitor tends to produce oscillations as its ESR increases at a low temperature. Beware of this case. When this type of capacitor is employed, make thorough evaluation of it, including its temperature characteristics. OUTIN R ≅ 0.3 Ω CL S-816 Series EXT VOUT VSS VIN ON/OFF Figure 9 Caution The above connection diagram and constant will not guarantee successful operation. Perform through evaluation using the actual application to set the constant.

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 11  Standard Circuit EXT VOUT VSS VIN Vref Current Source Overcurrent Protection Circuit Pull-Up Resistance Error Amplifier Sink Driver ON/OFF Remark The diode inside the IC is a parasitic diode. Figure 10 Caution The above connection diagram does not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constant.

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 12 Seiko Instruments Inc.  Precautions

• The overcurrent protection function of this IC detects and limits the sink current at the EXT pin inside the IC. Therefore, it does not work on collector overcurrents which are caused by an EXT-GND short- circuiting or other phenomenon outside the IC. To protect the external PNP transistor from collector overcurrents perfectly, it is necessary to provide another external overcurrent protection circuit.
• This IC performs phase compensation by using an in ternal phase compensator circuit and the ESR of an output capacitor. Therefore, always place a capacitor of 4.7 μF or more between VOUT and VSS. A tantalum type capacitor is recommended for this purpose. Moreover, to secure stable operation of the S-816 Series, it will be necessary to employ a capacitor having an ESR (Equivalent Series Resistance) covered in a certain optimum range (0.1 Ω to 5 Ω). Whether an ESR is larger or smaller than that optimum range, this could result in an unstable output, and cause a possibility of oscillations. Select a capacitor through careful evaluation made according to the actual service conditions.
• Overshoot may occur in the output voltage momentarily if the voltage is rapidly raised at power-on or when the power supply fluctuates. Sufficiently evaluate the output voltage at power-on with the actual device.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.
• Make sure that the power dissipation inside the IC d ue to the EXT output sink current (especially at a high temperature) will not surpass the power dissipation of the package.
• SII claims no responsibility for any disputes arisin g out of or in connection with any infringement by products including this IC of patents owned by a third party.

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 14 Seiko Instruments Inc. The detection of the overcurrent is done by the sense resistance (RS) and the PNP transistor (Tr1). When Tr1 comes on, triggered by a voltage drop of RS, the NPN transistor (Tr2) also comes on, according to the time constants of the capacitor (C2) and resistance (R2). This causes the ON/OFF pin to turn to OFF level, and the regulating operation to stop, and interrupting the current to the load. When the load current is cut off, the voltage drop of RS stops. This makes Tr1 off again, and also makes the NPN transistor (Tr2) off. In this condition, the ON/OFF pin returns to ON level, according to the time constants of the capacitor (C1) and resistance (R1). This delay time in which ON/OFF pin returns to ON level from OFF level is the time in which the load current remains cut off. If an overcurrent flows again after the ON/OFF pin has assumed ON level following the delay time and the regulating operation has been restarted, the circuit will again suspend the regulating operation and resume the intermittent operation. This intermittent operation will be continued till the overcurrentt is eliminated, and once the overcurrent disappears, the normal operation will be restored. The overcurrent detection value (IOUT_MAX) is represented by the following equation: IOUT_MAX = |VBE1| / RS In this case, RS denotes the resistance value of the sense resistance, and VBE1 denotes the base-emitter saturation voltage of Tr1. For the PNP transistor (Tr1) and the NPN transistor (Tr2), try to select those of small-signal type that offer a sufficient withstand voltage against the input voltage (V IN). The on-time (tON) and the off-time (tOFF) of the intermittent operation are broadly expressed by the following equations: tOFF = −1 × C1 × R1 × LN ( 1 − VSH / VIN ) In this case, VBE2 denotes the base-emitter saturation voltage of Tr2, VIN denotes the input voltage, and VSH denotes the inversion voltage ("L"→"H") of the OFF ON/ pin. Set the on-time value that does not cause the overcurrent protection to be activated by a rush current to the load capacitor. Then, compute the ratio between the on-time and the off-time from the maximum input voltage of the appropriate application and the power dissipation of the external PNP transistor, and decide the off-time with reference to the on-time established earlier. Take the equation above as a rough guide, because the actual on-time (t ON) and off-time (tOFF) should be defined and checked using the utilizing components. 2. External Adjustment of Output Voltage The S-816 Series allows you to adjust the output voltage or to set its value over the output voltage range (6 V) of the products of this series, when external resistances RA, RB and capacitor CC are added, as illustrated in Figure 13. Moreover, a temperature gradient can be obtained by inserting a thermistor or other element in series with external resistances RA and RB. VIN C IN − CL ON/OFF VIN EXT VOUT VSS OUT CC RA RB Error amplifier Vref Figure 13

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 15 The S-816 Series has an internal impedance resulting from R1 and R2 between the VOUT and the VSS pin, as shown in Figure 13. Therefore, the influence of the internal resistances (R1, R2) of the IC has to be taken into consideration in defining the output voltage (OUT). The output voltage (OUT) is expressed by the following equation: OUT = VOUT + VOUT × RA ÷ ( RB // *1 RI ) *1. "//" denotes a combined resistance in parallel. In this case, VOUT is the output voltage value of the S-816 Series, RA and RB is the resistance values of the external resistances, and RI is the resistance value (R1+R2) of the internal resistances in the IC. The accuracy of the output voltage (OUT) is determined by the absolute accuracy of external connecting resistances RA and RB, the output voltage accuracy (VOUT ±2.0%) of the S-816 Series, and deviations in the absolute value of the internal resistance (RI) in the IC. The maximum value (OUTmax) and the minimum value (OUTmin) of the output voltage (OUT), including deviations, are expressed by the following equations: OUTmax = V OUT × 1.02 + VOUT × 1.02 × RAmax ÷ ( RBmin // RImin ) OUTmin = VOUT × 0.98 + VOUT × 0.98 × RAmin ÷ ( RBmax // RImax ) Where RAmax, RAmin, RBmax and RBmin denote the maximum and minimum of the absolute accuracy of external resistances RA and RB, and RImax and RImin denote the maximum and minimum deviations of the absolute value of the internal resistance (RI) in the IC, respectively. The deviations in the absolute value of internal resistance (RI) in the IC vary with the output voltage set value of the S-816 Series, and are broadly classified as follows:

• Output voltage (VOUT) 2.5 V to 2.7 V  3.29 MΩ to 21.78 MΩ
• Output voltage (VOUT) 2.8 V to 3.1 V  3.29 MΩ to 20.06 MΩ
• Output voltage (VOUT) 3.2 V to 3.7 V  2.23 MΩ to 18.33 MΩ
• Output voltage (VOUT) 3.8 V to 5.1 V  2.23 MΩ to 16.61 MΩ
• Output voltage (VOUT) 5.2 V to 6.0 V  2.25 MΩ to 14.18 MΩ If a value of RI given by the equation shown below is taken in calculating the output voltage (OUT), a median voltage deviation of the output voltage (OUT) will be obtained. RI = 2 ÷ ( 1 ÷ (Maximum value of internal resistance of IC) + 1 ÷ (Minimum value of internal resistance of IC) ) The closer the output voltage (OUT) and the output voltage set value (VOUT) of the IC are brought to each other, the more the accuracy of the output voltage (OUT) remains immune to deviations in the absolute accuracy of external resistances (R A, RB) and the absolute value of the internal resistance (RI) of the IC. In particular, to suppress the influence of deviations in the internal resistance (RI), the resistance values of external resistances (RA, RB) need to be limited to a much smaller value than that of the internal resistance (RI). However, since reactive current flows through the external resistances (RA, RB), there is a tradeoff between the accuracy of the output voltage (OUT) and the reactive current. This should be taken into consideration, according to the requirements of the intended application. Note that when larger value (more than 1 MΩ) is taken for the external resistances (RA, RB), IC is vulnerable to external noise. Check the influence of this value well with the actual application. Furthermore, add a capacitor CC in parallel to the external resistance RA in order to avoid output oscillations and other types of instability. (Refer to Figure 13) Make sure that the capacitance value of CC is larger than the value given by the following equation: Caution The above connection diagram and constant will not guarantee successful operation. Perform through evaluation using the actual application to set the constant.

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 16 Seiko Instruments Inc.  Characteristics (Typical Data) 1. Input Voltage (VIN) - Output Voltage (VOUT) VIN-VOUT S-816A30AMC (IOUT=50 mA) VIN-VOUT S-816A50AMC (IOUT=50 mA) Ta=−40°C Ta=85°C Ta=25°C 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 2 4 6 8 10 12 14 16 V IN (V) VOUT (V) Ta=85°C Ta=−40°C Ta=25°C 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 2 4 6 8 10 12 14 16 V IN (V) VOUT (V) VIN-VOUT S-816A30AMC (Ta=25°C) VIN-VOUT S-816A50AMC (Ta=25°C) IOUT=1 mA IOUT=100 mA IOUT=500 mA IOUT=1 A 3.10 3.05 3.00 2.95 2.90 2.85 V IN (V) VOUT (V) IOUT=1AIOUT=1 mA IOUT=100 mA IOUT=500 mA 5.10 5.05 5.00 4.95 4.90 4.85 V IN (V) VOUT (V) 2. Output Current (IOUT) - Output Voltage (VOUT) IOUT-VOUT S-816A30AMC (VIN=4 V) IOUT-VOUT S-816A50AMC (VIN=6 V) Ta=85°C Ta=25°C Ta=−40°C 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 1 10 100 1000 I OUT (mA) VOUT (V) Ta=25°C Ta=85°C Ta=−40°C 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 1 10 100 1000 I OUT (mA) VOUT (V)

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 17 3. Temperature (Ta) - Output Voltage (VOUT) Ta-VOUT S-816A30AMC (VIN=4 V, IOUT=50 mA) Ta-VOUT S-816A50AMC (VIN=6 V, IOUT=50 mA) 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 −50 −25 0 25 50 75 100 Ta (°C) V OUT (V) 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 −50 −25 0 25 50 75 100 Ta (°C) V OUT (V) 4. Input Voltage (VIN) - Current Consumption (ISS) VIN-ISS S-816A30AMC (VON/OFF="H") Ta=−40°C Ta=85°C Ta=25°C 0 2 4 6 8 10 12 14 16 V IN (V) ISS (μA) 5. Input Voltage (VIN) - EXT Output Sink Overcurrent Set Value (IMAX) VIN-IMAX S-816A30AMC Ta=−40°C Ta=85°C Ta=25°C 4 6 8 10 12 14 16 V IN (V) IMAX (mA)

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 18 Seiko Instruments Inc. 6. Input Voltage (VIN) - ON/OFF Pin Input Voltage (VSH, VSL) VIN-VSH S-816A30AMC VIN-VSL S-816A30AMC Ta=−40°C Ta=85°C Ta=25°C 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 V IN (V) VSH (V) Ta=−40°C Ta=85°C Ta=25°C 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 V IN (V) VSL (V)

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR Rev.6.1_00 S-816 Series Seiko Instruments Inc. 19  Transient Response Characteristics (Typical Data) 1. Input Transient Response Characteristics (Power-on VIN=0 V → VOUT+1 V, IOUT=0 A, CL=10 μF) S-816A30AMC (VIN =0 V → 4 V) 4 V VIN (2 V/div) 0 V VOUT (2 V/div) 0 V t (100 μs/div) S-816A50AMC (VIN =0 V → 6 V) 6 V VIN (2 V/div) 0 V VOUT (2 V/div) 0 V t (100 μs/div) 2. Input Transient Response Characteristics (Supply voltage variation VIN=VOUT+1 V ↔ VOUT+2 V, CL=10 μF) S-816A30AMC (IOUT =10 mA) 5 V VIN (0.5 V/div) 4 V VOUT (20 mV/div) 3 V t (100 μs/div) S-816A30AMC (IOUT =300 mA) 5 V VIN (0.5 V/div) 4 V VOUT (20 mV/div) 3 V t (100 μs/div) S-816A50AMC (IOUT =10 mA) 7 V VIN (0.5 V/div) 6 V VOUT (20 mV/div) 5 V t (100 μs/div) S-816A50AMC (IOUT =300 mA) 7 V VIN (0.5 V/div) 6 V VOUT (20 mV/div) 5 V t (100 μs/div)

EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.6.1_00 20 Seiko Instruments Inc. 3. Load Transient Response Characteristics (Power-on IOUT=1 mA ↔ 100 mA, CL=10 μF) S-816A30AMC (VIN =4 V) 100 mA IOUT (50 mA/div) 1 mA VOUT (20 mV/div) 3 V t (50 μs/div) S-816A30AMC (VIN =4 V) 100 mA IOUT (50 mA/div) 1 mA VOUT (20 mV/div) 3 V t (50 μs/div) S-816A50AMC (VIN =6 V) 100 mA IOUT (50 mA/div) 1 mA VOUT (20 mV/div) 5 V t (50 μs/div) S-816A50AMC (VIN =6 V) 100 mA IOUT (50 mA/div) 1 mA VOUT (20 mV/div) 5 V t (50 μs/div) 4. ON/OFF Pin Transient Response Characteristics (VON/OFF=0 V → VIN, IOUT=0 A, CL=10 μF) S-816A30AMC (VIN =4 V) 4 V VON/OFF (2 V/div) 0 V VOUT (2 V/div) 0 V t (100 μs/div) S-816A50AMC (VIN =6V ) 6 V VON/OFF (2 V/div) 0 V VOUT (2 V/div) 0 V t (100 μs/div)

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