S5470 SII | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 24

Technical content

www.sii-ic.com ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC © Seiko Instruments Inc., 2012 Rev.1.2_00 Seiko Instruments Inc. 1 The S-5470 Series, developed by CMOS technology, is a photocurr ent detection IC with an ultra-low current consumption. It detects 0.7 nA typ. photocu rrent generated by an external photodiode (PD) or LED. It also has a function to detect the difference of photocurrent level between two external photodiodes (PDs) or LEDs. Due to its ultra-low current consumption and low-voltage oper ation, the S-5470 Series is suitable for battery-operated small mobile device applications. „ Features

  • Ultra-low current consumption: I DD ≤ 0.1 nA typ.
  • Micro-photocurrent detection: I DET = 0.7 nA typ.
  • Wide operation voltage range: VDD = 0.9 V to 5.5 V
  • Detection of certain photocurrent level: Detects certai n level of photocurrent gene rated by external photodiode (PD) or LED
  • Detection of photocurrent level difference: Detects the difference of photocurrent level between external photodiodes (PDs) or LEDs
  • External parts: One or two external photodiodes (PDs) or LEDs *1
  • Lead-free (Sn 100%), halogen-free *2 *1. The required number of PDs or LEDs changes with operation. Regarding selection of PD and LED, refer to " 3. Selection of PD or LED " in "„ Application Circuits ". *2. Refer to "„ Product Name Structure " for details. „ Applications
  • Shading detection
  • Light and darkness detection
  • Non-contact switch for portable and wireless device „ Package
  • SOT-23-5

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 3 „ Product Name Structure Users can select the output form and output logic for the S-5470 Series. Refer to " 1. Product name " regarding the contents of the product name, " 2. Package " regarding the package drawings, " 3. Product name list " regarding details of the product name. 1. Product name S-5470 x 21 I - M5T1 U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications M5T1: SOT-23-5, Tape Operation temperature I: Ta = −40°C to +85°C Detection mode 21: Current amplifier cu rrent amplification ratio × 2 Output form and output logic A: CMOS output (Active "H") B: CMOS output (Active "L") C: Nch open-drain out put (Active "H") D: Nch open-drain out put (Active "L") *1. Refer to the tape drawing. 2. Package Table 1 Package Drawing Codes Package Name Dimension Tape Reel SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD 3. Product name list Table 2 Product Name Output Form Output Logic Detection Mode S-5470A21I-M5T1U CMOS output Active "H" Curre nt amplifier current amplification ratio × 2 S-5470B21I-M5T1U CMOS output Active "L" Curre nt amplifier current amplification ratio × 2 S-5470C21I-M5T1U Nch open-drain output Active "H " Current amplifier current amplification ratio × 2 S-5470D21I-M5T1U Nch open-drain output Active "L " Current amplifier current amplification ratio × 2 Remark Please contact our sales office for products other than the above.

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC S-5470 Series Rev.1.2_00 Seiko Instruments Inc. 4 „ Pin Configuration 1. SOT-23-5 Table 3 Pin No. Symbol Description

1 VDD Power supply pin

2 VSS GND pin

3 INM Reference current input pin

4 INP Detection current input pin 13 2

5 OUT Output pin

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 5 „ Absolute Maximum Ratings Table 4 (Ta = +25°C unless otherwise specified) Item Symbol Absolute Maximum Rating Unit Power supply voltage VDD V SS − 0.3 to VSS + 7.0 V Input voltage VINP, VINM V SS − 0.3 to VSS + 7.0 V CMOS output product VSS − 0.3 to VDD + 0.3 V Output voltage Nch open-drain output product VOUT VSS − 0.3 to VSS + 7.0 V ISOURCE 20 mA Output pin current ISINK 20 mA Power dissipation PD 600*1 mW Operation ambient temperature Topr −40 to +85 °C Storage temperature Tstg −55 to +125 °C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefor e not be exceeded under any conditions. 0 50 100 150 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 200 100 300 500 700 400 600 Figure 4 Power Dissipation of Package (When Mounted on Board)

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC S-5470 Series Rev.1.2_00 Seiko Instruments Inc. 6 „ Electrical Characteristics Table 5 (Ta = +25°C, VDD = 3.0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD Ta = −40°C to +85°C 0.9 − 5.5 V − VINP = VSS, VINM = VSS − 0.01 10 nA 1 Current consumption I DD VINP = 1.0 V, VINM = VSS − 0.02 10 nA 1 Detection current IDET − 0.52 0.7 0.88 nA 2 Release current IREL − IDET × 0.7 IDET × 0.8 IDET × 0.9 nA 2 Detection current temperature coefficient Itc Ta = −40°C to +85°C − ±0.5 − % /°C − IINP V INP = 1.0 V 20 − − μA 3 Input current IINM V INM = 1.0 V 10 − − μA 3 Current amplifier current amplification ratio × 2 GINM − 1.8 2.0 2.2 Times 4 VDD = 0.9 V 0.01 0.4 − mA 5 Source current ISOURCE CMOS output product V OUT = VDD − 0.3 V VDD = 3.0 V 3.5 4.8 − mA 5 Output response time t OD − − − 15 ms −

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 11 3. Temperature characteristics of detection current The shaded area in Figure 17 shows the temperature characteristics of the detection voltage in the operation temperature range. −40 +25 +0.5%/°C IDET [nA] +85 Ta [°C] −0.5%/°C IDET25 *1. IDET25: Detection current value at Ta = + 25°C Figure 17 Temperature Characteristics of Detection Current

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 15 3. Selection of PD or LED Use PD or LED whose generation voltage is 1.0 V or more under usable light quantity. Moreover, as for the test circuit shown in Figure 24 , select PD or LED that satisfies the conditions below with detection or measurement of the quantity of light incidence in usage environment.

  • Certain photocurrent level detector I DET ≤ I
  • Photocurrent level difference detector 1 nA ≤ I ≤ 20 μA Light incidence 1 V I A D1, D2 Figure 24 Caution 1. Select PD and LED after thorough evaluation with actual application. SII shall not take responsibility for operation and characteristics of PD and LED. 2. As for the circuit of detecting photocurrent difference, shown in Figure 22 and Figure 23, use the two PDs or the two LEDs that have the same characteristics in generation voltage and in generation current, respectively.

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC S-5470 Series Rev.1.2_00 Seiko Instruments Inc. 16 „ Precautions

  • Use the S-5470 Series with the output current of 20 mA or less.
  • The S-5470 Series may malfunction if the power supply voltage changes suddenly.
  • As for the detecting circuit of the photocurrent difference (Refer to " Figure 22, Figure 23 Example Photocurrent Level Difference Detector "), use the S-5470 Series when input current of INP pin is 20 μA or less and input current of INM pin is 10 μA or less. In case of input current excess, note that the S-5470 Series might malfunction.
  • The output in the S-5470 Series is unstable in lower voltage than the minimum operation voltage. At the time of power-on, use the S-5470 Series after output stabilization.
  • Set a capacitor of 0.1 μF or more between the VDD pi n and VSS pin for stabilization.
  • Since INP pin and INM pin is easy to be affected by disturbance noise, perform countermeasures such as mounting external parts to ICs as close as possible.
  • If power impedance is high, the S-5470 Series may malfunction due to voltage drop caused by feed-through current. Set wire patterns carefully for lower power impedance.
  • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.
  • SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 17 „ Characteristics (Typical Data) 1. Detection current vs. Temperature 2. Detection current vs. Power supply voltage V DD = 3.0 V Ta = +25°C IDET [nA] 0.2 0.4 0.6 0.8 1.0 −4 0 0 2 55 07 5 85−25 Ta [°C] IDET [nA] 0.4 0.2 0.6 0.8 1.0 02 3 4 5 61 V DD [V] 3. Release current vs. Temperature 4. Release current vs. Power supply voltage V DD = 3.0 V Ta = +25°C IREL [nA] 0.2 0.4 0.6 0.8 1.0 −4 0 0 2 55 07 5 85−25 Ta [°C] IREL [nA] 0.4 0.2 0.6 0.8 1.0 02 3 4 5 61 V DD [V] 5. Current consumption vs. Temperature V DD = 3.0 V IDD [nA] 1.0 2.0 3.0 −4 0 0 2 55 07 5 85−25 Ta [°C] VINP = 1 V VINP = 0 V

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC S-5470 Series Rev.1.2_00 Seiko Instruments Inc. 18 6. Current consumption vs. Power supply S-5470A21I Ta = +25°C S-5470B21I Ta = +25°C IDD [nA] 0.05 0.04 0.02 0.03 0.01 0.06 0 2345 61 VDD [V] VINP = 0 V VINP = 1 V VDD [V] 0 6 0.06 IDD [nA] 5 4 3 2 1 0.05 0.04 0.03 0.02 0.01 VINP = 1 V VINP = 0 V S-5470C21I Ta = +25°C S-5470D21I Ta = +25°C VDD [V] 0 6 0.06 IDD [nA] 5 4 3 2 1 0.05 0.04 0.03 0.02 0.01 VINP = 0 V VINP = 1 V VDD [V] 0 6 0.06 IDD [nA] 5 4 3 2 1 0.05 0.04 0.03 0.02 0.01 VINP = 1 V VINP = 0 V 7. Current amplifier current amplication ratio vs. Temperature V DD = 3.0 V GINM [times] 1.6 1.8 2.0 2.2 2.4 −4 0 0 2 55 07 5 85−25 Ta [°C]

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 S-5470 Series Seiko Instruments Inc. 19 8. Output response time vs. Power supply voltage S-5470A21I Ta = +25°C S-5470B21I Ta = +25°C tOD [ms] 0.75 0.50 0.25 1.00 1.25 0 2345 61 V DD [V] VINP = 0 V → 1 V VINP = 1 V → 0 V VDD [V] 0 6 1.25 tOD [ms] 5 4 3 2 1 1.00 0.75 0.50 0.25 VINP = 1 V → 0 V VINP = 0 V → 1 V S-5470C21I Ta = +25°C S-5470D21I Ta = +25°C VDD [V] 0 6 1.25 tOD [ms] 5 4 3 2 1 1.00 0.75 0.50 0.25 VINP = 0 V → 1 V VINP = 1 V → 0 V VDD [V] 0 6 1.25 tOD [ms] 5 4 3 2 1 1.00 0.75 0.50 0.25 VINP = 1 V → 0 V VINP = 0 V → 1 V 9. Source current vs. Power supply voltage 10. Sink current vs. Power supply voltage ISOURCE [mA] 0 2345 61 VDD [V] Ta = +25°C Ta = +85°C Ta = −40°C ISINK [mA] 02 3 4 5 61 VDD [V] Ta = +85°C Ta = +25°CTa = −40°C

ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC S-5470 Series Rev.1.2_00 Seiko Instruments Inc. 20 „ Marking Specification 1. SOT-23-5 (1) to (3): Product code (Refer to Product name vs. Product code ) (4): Lot number 123 Top view (1) (2) (3) (4) Product name vs. Product code Product Code Product Name (1) (2) (3) S-5470A21I-M5T1U Y H A S-5470B21I-M5T1U Y H I S-5470C21I-M5T1U Y H Q S-5470D21I-M5T1U Y H Y

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X32/X2E/X39/XB1/X30/X2E/X32 /X31/X2E/X39/XB1/X30/X2E/X32 /X30/X2E/X39/X35/XB1/X30/X2E/X31 /X30/X2E/X34/XB1/X30/X2E/X31 /X30/X2E/X31/X36/X20/X2B/X30/X2E/X31 /X20/X2D/X30/X2E/X30/X36/X31/X32/X33 /X34/X35 /X4E/X6F/X2E/X20/X4D/X50/X30/X30/X35/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X31/X2E/X32 /X4D/X50/X30/X30/X35/X2D/X41/X2D/X50/X2D/X53/X44/X2D/X31/X2E/X32 /X53/X4F/X54/X32/X33/X35/X2D/X41/X2D/X50/X4B/X47/X20/X44/X69/X6D/X65/X6E/X73/X69/X6F/X6E/X73 /X6D/X6D

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /XF8/X31/X2E/X35 /X2B/X30/X2E/X31 /X2D/X30 /X32/X2E/X30/XB1/X30/X2E/X30/X35 /XF8/X31/X2E/X30 /X2B/X30/X2E/X32 /X2D/X30 /X34/X2E/X30/XB1/X30/X2E/X31 /X31/X2E/X34/XB1/X30/X2E/X32 /X30/X2E/X32/X35/XB1/X30/X2E/X31 /X33/X2E/X32/XB1/X30/X2E/X32 /X31 /X32 /X33 /X34/X35 /X4E/X6F/X2E/X20/X4D/X50/X30/X30/X35/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X32/X2E/X31 /X4D/X50/X30/X30/X35/X2D/X41/X2D/X43/X2D/X53/X44/X2D/X32/X2E/X31 /X53/X4F/X54/X32/X33/X35/X2D/X41/X2D/X43/X61/X72/X72/X69/X65/X72/X20/X54/X61/X70/X65 /X46/X65/X65/X64/X20/X64/X69/X72/X65/X63/X74/X69/X6F/X6E /X34/X2E/X30/XB1/X30/X2E/X31/X28/X31/X30/X20/X70/X69/X74/X63/X68/X65/X73/X3A/X34/X30/X2E/X30/XB1/X30/X2E/X32/X29 /X6D/X6D

/X4E/X6F/X2E /X54/X49/X54/X4C/X45 /X53/X43/X41/X4C/X45 /X55/X4E/X49/X54 /X53/X65/X69/X6B/X6F/X20/X49/X6E/X73/X74/X72/X75/X6D/X65/X6E/X74/X73/X20/X49/X6E/X63/X2E /X31/X32/X2E/X35/X6D/X61/X78/X2E /X39/X2E/X30/XB1/X30/X2E/X33 /XF8/X31/X33/XB1/X30/X2E/X32 /X28/X36/X30/XB0/X29 /X28/X36/X30/XB0/X29 /X51/X54/X59/X2E /X33/X2C/X30/X30/X30 /X4E/X6F/X2E/X20/X4D/X50/X30/X30/X35/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X31 /X4D/X50/X30/X30/X35/X2D/X41/X2D/X52/X2D/X53/X44/X2D/X31/X2E/X31 /X53/X4F/X54/X32/X33/X35/X2D/X41/X2D/X52/X65/X65/X6C /X45/X6E/X6C/X61/X72/X67/X65/X64/X20/X64/X72/X61/X77/X69/X6E/X67/X20/X69/X6E/X20/X74/X68/X65/X20/X63/X65/X6E/X74/X72/X61/X6C/X20/X70/X61/X72/X74 /X6D/X6D

www.sii-ic.com

  • The information described herein is subject to change without notice.
  • Seiko Instruments Inc. is not responsible for any pr oblems caused by circuits or diagrams described herein whose related industrial properties, patents, or ot her rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarant ee the success of any specific mass-production design.
  • When the products described herein are regulated produ cts subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority.
  • Use of the information described he rein for other purposes and/or repr oduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited.
  • The products described herein cannot be used as par t of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equi pment, vehicle equipment, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior written permission of Seiko Instruments Inc.
  • The products described herein are not designed to be radiation-proof.
  • Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may oc cur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.