S24H30 SII | Alldatasheet
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8-word X8-bit Serial NON-VOLATILE RAM The S-24H30R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory (E2PROM) to backup the SRAM. The organization is 8-word x 8- bit (total 64 bits) and data can be transferred serially by a data bus. Data is stored from SRAM to E2PROM by the store signal or an instruction from a CPU, and is recalled from E2PROM to SRAM by the recall signal or instruction from a CPU. The SRAM data can be read or written separately from non-volatile data stored in the E2PROM. M@ Features + Ideal as a peripheral for + +5-V single power supply microcomputers (+5 V+10%) Static timing ; + Low current consumption Minimum inputoutput interface Operating : 5 mA typ. Compatible with serial port as Store : 5 mA typ. Intel 8051 Standby : 1A max. + Non-volatile functions can be Sleep : 1 pA max. controlled by software or hardware + Compact 8 pin DIP/SOP + Erroneous store protection + E2PROM store cycles: - All inputs and outputs are compatible 104 or 105 times with TTL + E2PROM data retention: 10 years + High drive output Seiko Instruments Inc. 2-1 @® 4123443 0001769 7T3 mf
. bias under bias $-24H301 -50to +95 fosputwiose [vow | Yeo |v Recommended Operating Conditions Table 2 righ level inputvotiage ck MOF [20 | —- [vel v | Low level input voltage cz, 0, TORE, Wea | 00 | — [os | v | Operating temperature Topr avant =f - [ws | = | Seiko Instruments Inc. 2-3 M@™ 8123443 0001771 35]
@ DC Electrical Characteristics Table 3 S-24H30R: Ta= °C to +70°C, Vec= +5V 410% S-24H30I: Ta=-40°C to +85°C, Voc = +5V + 10% fewewen | [atweeowooree| —[— [1 | m| CE = GND, Other inputs Standby current sa | are GND of Vec BA Freee we | jemositor=r00me | = [= [or] v | Low level output voltage Vor CMOS : lox = 100 vA imeem | — [= Loew High level output voltage Vou Data Hold Characteristics Table 4 Data hold voltage CES 0.2V, RECALLE Vcc-0.2V [as | — [ss] v | a Data hold mode vi itcou ta cE Vig ---n-- A d---- nnn enn n nnn n epee Vox Vu ween nnn eee n nn nn nnn don nn nnn eee fone e Figure 3 Data hold timing chart 2-4 Seiko Instruments Inc. M® 8123443 0001772 298
(Ta = 25°C, f= 1.0 MHz, Vcc = 5 V) ee de femme [cw fur - | - | pw lonmnapnione | con foueow | - |= | fw | @ AC Electrical Characteristics Table 6 Measurement conditions Inoipuieraatine | [ww fiowiennewige | as | as |v] fourputioad | arms toonr | rire toopr | | 1. Data input/output timing Table 7 [ee [win [oe [0 a fesniewa [oon [os | — | = | | kiowievepasewats [wa [ee | — | = |» | Psnronine [wr [ow | = [= |e | kwawidine we = P= envi pws Poe | - P-L fevouime ws foe | fo | feces fw [ee [= [=e | Seiko Instruments Inc. 2-5 ME 4123443 0001773 124
- Store Cycle Table 9 fsocdutieime | we = f= Le bm | Store times: 104/105 Data retention : 10 years tst tste STORE ALLL L/ bo Figure 6 Hardware store instruction Set Table 10 Instruction Symbol Format Function hilo Write enable latch reset | wRDS | 1xxxx000 [Reset write enable latch (Disable write and store) Write enable latch set 1XXXx100 [Set write enable latch (Enable write and store) [Read | READ | 1AAAXI1x [Read data from RAM address AAA write write | 1AAAX011 [Write data into RAM address AAA 1XXXX001 [Store RAM data in E2PROM X: Don‘tcare A: Address bit Seiko Instruments Inc. 2-7 MB 41423443 0001775 TT?
- Internal latches The S-24H30R/I has two latches, one of which controls write operation of the SRAM, and both of which control permission/inhibition of store operation of the E2PROM.
1.1 Previous recall latch
The previous recall latch controls permission/inhibition of store operation of E2PROM. It is reset when the power is turned on, and it inhibits store operation of the E2PROM. it is set by executing the software recall instruction or hardware recall, and it permits store operation of the E2PROM.
1.2 Write enable latch
The write enable latch controls permission/inhibition of both store operation of the E2PROM and write operation of the SRAM. It is reset when the power is turned on or by executing WARDS instruction, and it inhibits both store operation of the E2PROM and write operation of the SRAM. It is set by executing WREN instruction, and it permits both store operation of the E2PROM and write operation of the SRAM. When store operation of the E2PROM is completed, the write enable latch is automatically reset. Therefore, in order to execute store operation again, it is necessary to execute WREN instruction and to set the write enable latch.
1.3 Both the previous recall latch and the write enable latch must be set for permission of
store operation. Software recall instruction set Set: permission Hardware recall operation f Reset : inhibition E2PROM Previous recall store operation latch control Reset WREN instruction SRAM Write enable write operation Power-on latch Set: permission control WRODS instruction Reset ae Store operation completed Reset: inhibition Figure 7 Internal latch 2-8 Seiko Instruments Inc. WM 8123443 0001776 933 ;
- SRAM mode
2.1 Read
The data is read from the SRAM with READ instruction. Inputting a start bit, 3-bit address and 4-bit instruction code causes 8-bit data output on DO. In S-24H30R/, a bi-directional serial interface can be made by connecting DI and DO. See Figure 8 for the timing.
2.2 Write
The data is written into the SRAM with WRITE instruction. 8-bit data is input on DI following a start bit, 3-bit address and 4-bit instruction code. See Figure 9 for the timing. The write enable latch must be set before WRITE instruction. 3. E2PROM mode Data is input to and output from the E2PROM through the SRAM.
3.1 Store
The SRAM data is copied into the E2PROM when STO instruction is executed or STORE goes low. The SRAM data does not change after STO instruction. Since the data stored in the E2PROM is non-volatile, it is retained even if power is turned off. In the case that store operation is performed while data is output on DO and during read operation of the SRAM, DO becomes high-impedance. During store operation, all other operations are inhibited. Both the previous recall latch and the write enable latch must be set for store operation.
3.2 Recall
The E2PROM data is recopied into the SRAM when RECALL goes low or RCL instruction is executed. In the case that recall operation is performed while data is output on DO and during read operation of SRAM, DO becomes high-impedance. During recall operation, all other operations are inhibited. 4. Sleep mode Executing SLEEP instruction disables operation of the SRAM. The E2PROM dala is retained. The sleep mode can be exited by recall operation. Since the S-24H30R/I is in standby status and the current consumption is low when CE is at GND level, it is not necessary to set to sleep mode in order to reduce the current consumption during non-operation. Seiko Instruments Inc. 2-9 M@™@ 6123443 0001777 67T
- Operation timing After CE rose, when SK clock rises and DI becomes high, a start bit is recognized and the fetch of an instruction starts. Data is fetched to DI terminal at the rise of SK clock.
5.1 Read
DO is output at the fall of the 8th clock, and others are output at the rise of the clock. i SK Be of 7 PL LPL Se Le Sree freL_frs]_fre|_ a ol TYREE NRT TV siz po — (DOXA X23 XN Xe Kz X00) X : Don’t care Figure 8 Read mode timing
5.2 Write
Data is written to the SRAM at the rise of the SK clock. cE fo SK ge OL PLL LsL yell LJeLieLfoL IL afi Sais Sie eS o TMG (7 EYE) Figure 9 Write mode timing
5.3 Other operation modes
CE must be low between instructions. a rr o TOC OQRICQKE YX} Figure 10 Other operation mode 2-10 Seiko Instruments Inc. M@™ 4123443 0001775 70b
Interface with CPU with Serial Port - When SK and DI are high at the rise of CE, high of DI is regarded as a start bit and the clock 1 generates and the high of Dl is fetched. When DI is low, Di is regarded as a Start bit after DI becomes high at the rise of SK. + After power on or after instruction is performed, DI must be set 1 for preparing the fetch of the start bit of a next instruction. Figures 11 to 13 show the timings of write/read, and other operation modes, and interfacing examples are shown on the next page. c Fetch data Fetch CPU data -CLK1 sx ie 3LJaLisLieLi7 ne " " " " ° . 17 oI O )) 1 sttbeNAXAXAXX/ 1 1\\ Xx NIXK XX XK XX KX XX XXX Hi-Z bo He <e Xoo X2X3X 4X5 XE XT KG DY °7 Fetch CPU data Dummy bit Need not to be fetched Figure 11 Read mode timing ce Fetch data Write to SRAM ~CLK1 0 19 ALLELES eLLILIBLRLI 0 “ONE XAXEXENG/T 1 Va XDXTXEXSXEXEXENT 7 Dummy bit Figure 12 Write mode timing Execute instruction ce Fetch data —CLKI sk ° & 3| JaLjsLie_j7Ljsv 9
0 ONE KX KEKE XE XE XE
Dummy bit; Recommended to be set to “1” for fetching the start bit of next instruction Figure 13 Other operation mode timing Seiko Instruments Inc. 2-11 M@™ 8123443 0001779 bye me
The maximum speed of the SK clock (fgkmax) is expressed by the following formula: tsk tosu + tonu + tep Max. For example, when interfacing with NEC »PD75XX series, fgxmax is as follows: uPD75XX series tpsy : 300 ns min. tou : 450 ns min. S-24H30R/ tpp: Ons min. , 300 ns max. fskmax = J. tt = 952kHz tsk 300+450+300 ~ 105ys Seiko Instruments Inc. 2-13 @™§ 6123443 0001781 2TO mm
Dimensions (Unit:mm) 1. S-24H30R/I (8-pin DIP) 9.6 max. Cif Cy fy 18 ~ - 6.7 max. a 0.3 I OCT, TAA Fy 4.5 max. 3.1 min. 0.5 2.54 7.62 Figure 17 2. S-24H30RF/IF (8-pin SOP) 5.15 max. 0.55 ee po i °
16 H YO Ha
i127 [| #15 0.35 Figure 18 2-14 Seiko Instruments Inc. MB 6123443 0001782 137
- S-24H30R/I (8-pin DIP) [ | Oooo 1to 9: Product name 10 to 12 : Lot No. u 2 304 5 6 13 : Assembly mark [| [ | [| [| [ | [| 14: Last column of year 15 : Month of manufacture: January = 1, February = 2, 7 8 9 10 11 12 March = 3, April= 4, May=5, June=6, [ | July = 7,August = 8, September = 9, October = X, November = Y, December =Z 13014 «15 2. S-24H30RF/F (8-pin SOP) [| [| [| [| [ | 1 to 10 : Product name 11: Month of manufacture: January = 1, February = 2, 123 45 March=3, April=4, May=5, June=6, July=7, [ | [ | [ ] [ | [| August= 8, September = 9, October = X, November = Y, December = Z 6 7 8 9 10 — 12 to 13: Lot No. WW 120«13 Seiko Instruments Inc. 2-15 @® 8123443 0001783 073 mm
@ Characteristics 1. DC characteristics 1.1 Operating current consumption Icc — 1.2 Operating current consumption Ico — Ambient temperature Ta Power supply voltage Voc SN , / lec 4 4 ™ a LLL (mA) : , VA : LE -40 0 85 2 3 4 5 6 Ta(°C) Vec(V) 1.3 Operating current consumption I¢c — 1.4 Sleep/standby current consumption SK frequency fsx Is_/Igg — Ambient temperature Ta Ta=25°C Veco =5.5V 6 1.0 lec (mA) Isu/Isp 4 (pA) 4 — Vcc =5.5V 0 — 10k 100k = 1M 40 9 race) fsx (Hz) 2-16 Seiko Instruments Inc. M =4123443 0001784 TOT
1.5 Store current consumption Isto — 1.6 Store current consumption Isto — Ambient temperature Ta Power supply voltage Vcc | Tht | a 4 4 A Isto = -40° (mA) iS Vec=5.5V | (ma) Ta=-40°C 2 |[-—~. A 0 iil 0 =40 0 85 4 5 6 Ta(’c) Vee (Vv)
1.7 Store inhibition voltage Vwi —
(vy) ° 40 85 - ° Ta(’c) Seiko Instruments Inc. 2-17 MM! 4123443 0001785 54h
1.8 Input voltage Vin — 1.9 Input voltage Vin — Ambient temperature Ta Power supply voltage Vcc 2.0 2.0 Vin | Vin -40 85
0 Tac) 4 5 6
Vc (V) 1.10 High level output current lon — 1.11 Low level output current lo. — Ambient temperature Ta Ambient temperature Ta
10 T {| ft 10 Lit
\\ ~— Vcc =4.5V \\ x Vcc =4.5V OH = low. Voi = 0.4V (ma) ~ Vou =2.4V (aay > fou ° 40 0 85 ° 40 0 85 Ta(°C) Ta (°C) 2-18 Seiko Instruments Inc. M™ 4123443 0001786 332
1.12 High level output voltage Von — 1.13 Low level output voltage Vo. — Ambient temperature Ta Ambient temperature Ta 45 06 | [| Vou Vor ™) Vcc =4.5V 2) . ] | -40 0 85 -40 85 Tara ° Tare) Seiko Instruments Inc. 2-19 MB 6123443 0001787 719 a
- AC characteristics 2.1 SK pulse width tsk — 2.2 SK pulse width tsk — Ambient temperature Ta Power supply voltage Voc tsk tsk (ns) (us) Ta = 85°C Vcc =4.5V os rr | os ian =40 85 ° Ta(°C) 4 5 6 Vec(V) 2.3 Input data setup time tps — 2.4 Input data hold time toy — Ambient temperature Ta Ambient temperature Ta tos tou (ns) (ns) Vcc =4.5V mai ) al Zao 85 =40 0 85 ° Tare) Tat) 2-20 Seiko Instruments Inc. M@ 4123443 0001788 655
2.5 SK data valid time tpp — 2.6 Recall pulse width tacp ~— Ambient temperature Ta Ambient temperature Ta 200 il 100 fil ted tree ™ | (ns) Ff Vcc = 4.5V 0 0 a -40 0 85 -40 0 85 Ta (°C) Ta (°C) 2.7 Recall cycle time tacc — 2.8 Store time tst — Ambient temperature Ta Ambient temperature Ta tree tsr (us) “| (ms) LiL | al 0 0 -40 0 85 -40 it 85 Ta(°c) Ta (°C) Seiko Instruments Inc. 2-21 M@@ 8123443 0001789 55) a
- Endurance characteristics Minimum store voltage 4 ™) ++ +t + | a ttt ey Ty 0 10 102 103 104 105 106 Store cycles 2-22 Seiko Instruments Inc. @™® =8123443 0001790 203 mm