S1002

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www.sii-ic.com VOLTAGE DETECTOR WITH SENSE PIN © Seiko Instruments Inc., 2014 Rev.1.1_00 Seiko Instruments Inc. 1 The S-1002 Series is a high-accuracy voltage detector develo ped using CMOS technology. The detection voltage is fixed internally with an accuracy of ±1.0% (−VDET(S) ≥ 2.2 V). It operates with current consumption of 500 nA typ. Apart from the power supply pin, the detection voltage input pi n (SENSE pin) is also prepared, so the output is stable even if the SENSE pin falls to 0 V. Two output forms Nch open-drain output and CMOS output are available.  Features

• Detection voltage: 1.0 V to 5.0 V (0.1 V step)
• Detection voltage accuracy: ±1.0% (2.2 V ≤ −VDET(S) ≤ 5.0 V) ±22 mV (1.0 V ≤ −VDET(S) < 2.2 V)
• Current consumption: 500 nA typ.
• Operation voltage range: 0.95 V to 10.0 V
• Hysteresis width: 5% ± 2%
• Output form: Nch open-drain output (Active "L") CMOS output (Active "L")
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free  Applications
• Power supply monitor for microcomputer and reset for CPU
• Constant voltage power supply monitor for TV, Blu-ray recorder and home appliance
• Power supply monitor for portable devices such as notebook PC, digital still camera and mobile phone  Packages
• SOT-23-5
• SC-82AB

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 3  Product Name Structure Users can select the output form, detection volta ge value, and package type for the S-1002 Series. Refer to " 1. Product name " regarding the contents of product name, " 2. Function list of product types " regarding the product types, " 3. Packages " regarding the package drawings and " 4. Product name list " regarding details of product name. 1. Product name S-1002 x x xx I - xxxx U Package abbreviation and IC packing specifications*1 M5T1: SOT-23-5, Tape N4T1: SC-82AB, Tape Detection voltage value 10 to 50 (e.g., when the detection voltage is 1.0 V, it is expressed as 10.) Environmental code U: Lead-free (Sn 100%), halogen-free Operation temperature I: Ta = −40°C to +85°C Output form*3 N: Nch open-drain output (Active "L")*4 C: CMOS output (Active "L") *4 Pin configuration*2 A, B *1. Refer to the tape drawing. *2. Refer to " Pin Configurations". *3. Refer to "2. Function list of product types ". *4. If you request the product with output logic active "H", contact our sales office. 2. Function list of product types Table 1 Product Type Output Form Output Logic Pin Configuration Package NA Nch open-drain output Active "L" A SOT-23-5 NB Active "L" B SOT-23-5, SC-82AB CA CMOS output Active "L" A SOT-23-5 CB Active "L" B SOT-23-5, SC-82AB 3. Packages Table 2 Package Drawing Codes Package Name Dimension Tape Reel SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD SC-82AB NP004-A-P-SD NP004-A-C-SD NP004-A-C-S1 NP004-A-R-SD

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 4 4. Product name list 4. 1 S-1002 Series NA type Output form: Nch open-drain output (Active "L") Table 3 Detection Voltage SOT-23-5

1.0 V ± 22 mV S-1002NA10I-M5T1U

1.1 V ± 22 mV S-1002NA11I-M5T1U

1.2 V ± 22 mV S-1002NA12I-M5T1U

1.3 V ± 22 mV S-1002NA13I-M5T1U

1.4 V ± 22 mV S-1002NA14I-M5T1U

1.5 V ± 22 mV S-1002NA15I-M5T1U

1.6 V ± 22 mV S-1002NA16I-M5T1U

1.7 V ± 22 mV S-1002NA17I-M5T1U

1.8 V ± 22 mV S-1002NA18I-M5T1U

1.9 V ± 22 mV S-1002NA19I-M5T1U

2.0 V ± 22 mV S-1002NA20I-M5T1U

2.1 V ± 22 mV S-1002NA21I-M5T1U

2.2 V ± 1.0% S-1002NA22I-M5T1U 2.3 V ± 1.0% S-1002NA23I-M5T1U 2.4 V ± 1.0% S-1002NA24I-M5T1U 2.5 V ± 1.0% S-1002NA25I-M5T1U 2.6 V ± 1.0% S-1002NA26I-M5T1U 2.7 V ± 1.0% S-1002NA27I-M5T1U 2.8 V ± 1.0% S-1002NA28I-M5T1U 2.9 V ± 1.0% S-1002NA29I-M5T1U 3.0 V ± 1.0% S-1002NA30I-M5T1U 3.1 V ± 1.0% S-1002NA31I-M5T1U 3.2 V ± 1.0% S-1002NA32I-M5T1U 3.3 V ± 1.0% S-1002NA33I-M5T1U 3.4 V ± 1.0% S-1002NA34I-M5T1U 3.5 V ± 1.0% S-1002NA35I-M5T1U 3.6 V ± 1.0% S-1002NA36I-M5T1U 3.7 V ± 1.0% S-1002NA37I-M5T1U 3.8 V ± 1.0% S-1002NA38I-M5T1U 3.9 V ± 1.0% S-1002NA39I-M5T1U 4.0 V ± 1.0% S-1002NA40I-M5T1U 4.1 V ± 1.0% S-1002NA41I-M5T1U 4.2 V ± 1.0% S-1002NA42I-M5T1U 4.3 V ± 1.0% S-1002NA43I-M5T1U 4.4 V ± 1.0% S-1002NA44I-M5T1U 4.5 V ± 1.0% S-1002NA45I-M5T1U 4.6 V ± 1.0% S-1002NA46I-M5T1U 4.7 V ± 1.0% S-1002NA47I-M5T1U 4.8 V ± 1.0% S-1002NA48I-M5T1U 4.9 V ± 1.0% S-1002NA49I-M5T1U 5.0 V ± 1.0% S-1002NA50I-M5T1U

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 5 4. 2 S-1002 Series NB type Output form: Nch open-drain output (Active "L") Table 4 Detection Voltage SOT-23-5 SC-82AB

1.0 V ± 22 mV S-1002NB10I-M5T1U S-1002NB10I-N4T1U

1.1 V ± 22 mV S-1002NB11I-M5T1U S-1002NB11I-N4T1U

1.2 V ± 22 mV S-1002NB12I-M5T1U S-1002NB12I-N4T1U

1.3 V ± 22 mV S-1002NB13I-M5T1U S-1002NB13I-N4T1U

1.4 V ± 22 mV S-1002NB14I-M5T1U S-1002NB14I-N4T1U

1.5 V ± 22 mV S-1002NB15I-M5T1U S-1002NB15I-N4T1U

1.6 V ± 22 mV S-1002NB16I-M5T1U S-1002NB16I-N4T1U

1.7 V ± 22 mV S-1002NB17I-M5T1U S-1002NB17I-N4T1U

1.8 V ± 22 mV S-1002NB18I-M5T1U S-1002NB18I-N4T1U

1.9 V ± 22 mV S-1002NB19I-M5T1U S-1002NB19I-N4T1U

2.0 V ± 22 mV S-1002NB20I-M5T1U S-1002NB20I-N4T1U

2.1 V ± 22 mV S-1002NB21I-M5T1U S-1002NB21I-N4T1U

2.2 V ± 1.0% S-1002NB22I-M5T1U S-1002NB22I-N4T1U 2.3 V ± 1.0% S-1002NB23I-M5T1U S-1002NB23I-N4T1U 2.4 V ± 1.0% S-1002NB24I-M5T1U S-1002NB24I-N4T1U 2.5 V ± 1.0% S-1002NB25I-M5T1U S-1002NB25I-N4T1U 2.6 V ± 1.0% S-1002NB26I-M5T1U S-1002NB26I-N4T1U 2.7 V ± 1.0% S-1002NB27I-M5T1U S-1002NB27I-N4T1U 2.8 V ± 1.0% S-1002NB28I-M5T1U S-1002NB28I-N4T1U 2.9 V ± 1.0% S-1002NB29I-M5T1U S-1002NB29I-N4T1U 3.0 V ± 1.0% S-1002NB30I-M5T1U S-1002NB30I-N4T1U 3.1 V ± 1.0% S-1002NB31I-M5T1U S-1002NB31I-N4T1U 3.2 V ± 1.0% S-1002NB32I-M5T1U S-1002NB32I-N4T1U 3.3 V ± 1.0% S-1002NB33I-M5T1U S-1002NB33I-N4T1U 3.4 V ± 1.0% S-1002NB34I-M5T1U S-1002NB34I-N4T1U 3.5 V ± 1.0% S-1002NB35I-M5T1U S-1002NB35I-N4T1U 3.6 V ± 1.0% S-1002NB36I-M5T1U S-1002NB36I-N4T1U 3.7 V ± 1.0% S-1002NB37I-M5T1U S-1002NB37I-N4T1U 3.8 V ± 1.0% S-1002NB38I-M5T1U S-1002NB38I-N4T1U 3.9 V ± 1.0% S-1002NB39I-M5T1U S-1002NB39I-N4T1U 4.0 V ± 1.0% S-1002NB40I-M5T1U S-1002NB40I-N4T1U 4.1 V ± 1.0% S-1002NB41I-M5T1U S-1002NB41I-N4T1U 4.2 V ± 1.0% S-1002NB42I-M5T1U S-1002NB42I-N4T1U 4.3 V ± 1.0% S-1002NB43I-M5T1U S-1002NB43I-N4T1U 4.4 V ± 1.0% S-1002NB44I-M5T1U S-1002NB44I-N4T1U 4.5 V ± 1.0% S-1002NB45I-M5T1U S-1002NB45I-N4T1U 4.6 V ± 1.0% S-1002NB46I-M5T1U S-1002NB46I-N4T1U 4.7 V ± 1.0% S-1002NB47I-M5T1U S-1002NB47I-N4T1U 4.8 V ± 1.0% S-1002NB48I-M5T1U S-1002NB48I-N4T1U 4.9 V ± 1.0% S-1002NB49I-M5T1U S-1002NB49I-N4T1U 5.0 V ± 1.0% S-1002NB50I-M5T1U S-1002NB50I-N4T1U

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 6 4. 3 S-1002 Series CA type Output form: CMOS output (Active "L") Table 5 Detection Voltage SOT-23-5

1.0 V ± 22 mV S-1002CA10I-M5T1U

1.1 V ± 22 mV S-1002CA11I-M5T1U

1.2 V ± 22 mV S-1002CA12I-M5T1U

1.3 V ± 22 mV S-1002CA13I-M5T1U

1.4 V ± 22 mV S-1002CA14I-M5T1U

1.5 V ± 22 mV S-1002CA15I-M5T1U

1.6 V ± 22 mV S-1002CA16I-M5T1U

1.7 V ± 22 mV S-1002CA17I-M5T1U

1.8 V ± 22 mV S-1002CA18I-M5T1U

1.9 V ± 22 mV S-1002CA19I-M5T1U

2.0 V ± 22 mV S-1002CA20I-M5T1U

2.1 V ± 22 mV S-1002CA21I-M5T1U

2.2 V ± 1.0% S-1002CA22I-M5T1U 2.3 V ± 1.0% S-1002CA23I-M5T1U 2.4 V ± 1.0% S-1002CA24I-M5T1U 2.5 V ± 1.0% S-1002CA25I-M5T1U 2.6 V ± 1.0% S-1002CA26I-M5T1U 2.7 V ± 1.0% S-1002CA27I-M5T1U 2.8 V ± 1.0% S-1002CA28I-M5T1U 2.9 V ± 1.0% S-1002CA29I-M5T1U 3.0 V ± 1.0% S-1002CA30I-M5T1U 3.1 V ± 1.0% S-1002CA31I-M5T1U 3.2 V ± 1.0% S-1002CA32I-M5T1U 3.3 V ± 1.0% S-1002CA33I-M5T1U 3.4 V ± 1.0% S-1002CA34I-M5T1U 3.5 V ± 1.0% S-1002CA35I-M5T1U 3.6 V ± 1.0% S-1002CA36I-M5T1U 3.7 V ± 1.0% S-1002CA37I-M5T1U 3.8 V ± 1.0% S-1002CA38I-M5T1U 3.9 V ± 1.0% S-1002CA39I-M5T1U 4.0 V ± 1.0% S-1002CA40I-M5T1U 4.1 V ± 1.0% S-1002CA41I-M5T1U 4.2 V ± 1.0% S-1002CA42I-M5T1U 4.3 V ± 1.0% S-1002CA43I-M5T1U 4.4 V ± 1.0% S-1002CA44I-M5T1U 4.5 V ± 1.0% S-1002CA45I-M5T1U 4.6 V ± 1.0% S-1002CA46I-M5T1U 4.7 V ± 1.0% S-1002CA47I-M5T1U 4.8 V ± 1.0% S-1002CA48I-M5T1U 4.9 V ± 1.0% S-1002CA49I-M5T1U 5.0 V ± 1.0% S-1002CA50I-M5T1U

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 7 4. 4 S-1002 Series CB type Output form: CMOS output (Active "L") Table 6 Detection Voltage SOT-23-5 SC-82AB

1.0 V ± 22 mV S-1002CB10I-M5T1U S-1002CB10I-N4T1U

1.1 V ± 22 mV S-1002CB11I-M5T1U S-1002CB11I-N4T1U

1.2 V ± 22 mV S-1002CB12I-M5T1U S-1002CB12I-N4T1U

1.3 V ± 22 mV S-1002CB13I-M5T1U S-1002CB13I-N4T1U

1.4 V ± 22 mV S-1002CB14I-M5T1U S-1002CB14I-N4T1U

1.5 V ± 22 mV S-1002CB15I-M5T1U S-1002CB15I-N4T1U

1.6 V ± 22 mV S-1002CB16I-M5T1U S-1002CB16I-N4T1U

1.7 V ± 22 mV S-1002CB17I-M5T1U S-1002CB17I-N4T1U

1.8 V ± 22 mV S-1002CB18I-M5T1U S-1002CB18I-N4T1U

1.9 V ± 22 mV S-1002CB19I-M5T1U S-1002CB19I-N4T1U

2.0 V ± 22 mV S-1002CB20I-M5T1U S-1002CB20I-N4T1U

2.1 V ± 22 mV S-1002CB21I-M5T1U S-1002CB21I-N4T1U

2.2 V ± 1.0% S-1002CB22I-M5T1U S-1002CB22I-N4T1U 2.3 V ± 1.0% S-1002CB23I-M5T1U S-1002CB23I-N4T1U 2.4 V ± 1.0% S-1002CB24I-M5T1U S-1002CB24I-N4T1U 2.5 V ± 1.0% S-1002CB25I-M5T1U S-1002CB25I-N4T1U 2.6 V ± 1.0% S-1002CB26I-M5T1U S-1002CB26I-N4T1U 2.7 V ± 1.0% S-1002CB27I-M5T1U S-1002CB27I-N4T1U 2.8 V ± 1.0% S-1002CB28I-M5T1U S-1002CB28I-N4T1U 2.9 V ± 1.0% S-1002CB29I-M5T1U S-1002CB29I-N4T1U 3.0 V ± 1.0% S-1002CB30I-M5T1U S-1002CB30I-N4T1U 3.1 V ± 1.0% S-1002CB31I-M5T1U S-1002CB31I-N4T1U 3.2 V ± 1.0% S-1002CB32I-M5T1U S-1002CB32I-N4T1U 3.3 V ± 1.0% S-1002CB33I-M5T1U S-1002CB33I-N4T1U 3.4 V ± 1.0% S-1002CB34I-M5T1U S-1002CB34I-N4T1U 3.5 V ± 1.0% S-1002CB35I-M5T1U S-1002CB35I-N4T1U 3.6 V ± 1.0% S-1002CB36I-M5T1U S-1002CB36I-N4T1U 3.7 V ± 1.0% S-1002CB37I-M5T1U S-1002CB37I-N4T1U 3.8 V ± 1.0% S-1002CB38I-M5T1U S-1002CB38I-N4T1U 3.9 V ± 1.0% S-1002CB39I-M5T1U S-1002CB39I-N4T1U 4.0 V ± 1.0% S-1002CB40I-M5T1U S-1002CB40I-N4T1U 4.1 V ± 1.0% S-1002CB41I-M5T1U S-1002CB41I-N4T1U 4.2 V ± 1.0% S-1002CB42I-M5T1U S-1002CB42I-N4T1U 4.3 V ± 1.0% S-1002CB43I-M5T1U S-1002CB43I-N4T1U 4.4 V ± 1.0% S-1002CB44I-M5T1U S-1002CB44I-N4T1U 4.5 V ± 1.0% S-1002CB45I-M5T1U S-1002CB45I-N4T1U 4.6 V ± 1.0% S-1002CB46I-M5T1U S-1002CB46I-N4T1U 4.7 V ± 1.0% S-1002CB47I-M5T1U S-1002CB47I-N4T1U 4.8 V ± 1.0% S-1002CB48I-M5T1U S-1002CB48I-N4T1U 4.9 V ± 1.0% S-1002CB49I-M5T1U S-1002CB49I-N4T1U 5.0 V ± 1.0% S-1002CB50I-M5T1U S-1002CB50I-N4T1U

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 8  Pin Configurations 1. S-1002 Series NA / CA type 1. 1 SOT-23-5 13 2 Top view Figure 3 Table 7 Pin Configuration A Pin No. Symbol Description

1 OUT Voltage detection output pin

2 VDD Power supply pin

3 VSS GND pin

4 NC*1 No connection

5 SENSE Detection voltage input pin

*1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 2. S-1002 Series NB / CB type 2. 1 SOT-23-5 13 2 Top view Figure 4 Table 8 Pin Configuration B Pin No. Symbol Description

2 VSS GND pin

3 VDD Power supply pin

4 SENSE Detection voltage input pin

5 NC*1 No connection

*1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 2. 2 SC-82AB Top view Figure 5 Table 9 Pin Configuration B Pin No. Symbol Description

1 SENSE Detection voltage input pin

3 OUT Voltage detection output pin

4 VSS GND pin

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 9  Absolute Maximum Ratings Table 10 (Ta = +25°C unless otherwise specified) Item Symbol Abso lute Maximum Rating Unit Power supply voltage V DD − VSS 12.0 V SENSE pin input voltage V SENSE V SS − 0.3 to 12.0 V Output voltage Nch open-drain output product VOUT VSS − 0.3 to 12.0 V CMOS output product V SS − 0.3 to VDD + 0.3 V Output current I OUT 50 mA Power dissipation SOT-23-5 PD 600*1 mW SC-82AB 350*1 mW Operation ambient temperature T opr −40 to +85 °C Storage temperature T stg −40 to +125 °C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefor e not be exceeded under any conditions. 0 50 100 150 Power Dissipation (PD) [mW] Ambient Temperature (Ta) [°C] 200 100 300 500 700 SOT-23-5 SC-82AB 400 600 Figure 6 Power Dissipation of Package (When Mounted on Board)

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 10  Electrical Characteristics 1. Nch open-drain output product Table 11 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Detection voltage*1 −VDET 0.95 V ≤ VDD ≤ 10.0 V 1.0 V ≤ −VDET(S) < 2.2 V −VDET(S) − 0.022 −VDET(S) −VDET(S) + 0.022 V 1 2.2 V ≤ −VDET(S) ≤ 5.0 V −VDET(S) × 0.99 −VDET(S) −VDET(S) × 1.01 V 1 Hysteresis width V HYS − −VDET × 0.03 −VDET × 0.05 −VDET × 0.07 V 1 Current consumption*2 ISS V DD = 10.0 V, VSENSE = −VDET(S) + 1.0 V − 0.50 0.90 μA 2 Operation voltage V DD − 0.95 − 10.0 V 1 Output current I OUT Output transistor Nch VDS *3 = 0.5 V VSENSE = 0.0 V VDD = 0.95 V 0.59 1.00 − mA 3 VDD = 1.2 V 0.73 1.33 − mA 3 VDD = 2.4 V 1.47 2.39 − mA 3 VDD = 4.8 V 1.86 2.50 − mA 3 Leakage current I LEAK Output transistor Nch VDD = 10.0 V, VDS *3 = 10.0 V, VSENSE = 10.0 V − − 0.08 μA 3 Detection voltage temperature coefficient*4 Δ−VDET ΔTa • −VDET Ta = −40°C to +85°C − ±100 ± 350 ppm/°C 1 Detection delay time*5 tDET V DD = 5.0 V − 40 − μs 4 Release delay time*6 tRESET V DD = 5.0 V −VDET(S) ≤ 2.4 V − 40 − μs 4

2.4 V < −VDET(S) − 80 − μs 4

*1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the cent er value of the detection voltage range in Table 3 or Table 4) *2. The current flowing through the SENSE pin resistance is not included. *3. V DS: Drain-to-source voltage of the output transistor *4. The temperature change of the detection voltage [mV/ °C] is calculated by using the following equation. Δ−VDET ΔTa []mV/°C *1 = −VDET(S) (typ.)[]V *2 × Δ−VDET ΔTa • −VDET []ppm/°C *3 ÷ 1000 *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient *5. The time period from when the pulse voltage of 6.0 V → −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 kΩ. *6. The time period from when the pulse voltage of 0 V → −VDET(S) + 2.0 V or 6.0 V is applied to the SENSE pin to when VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 kΩ.

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 11 2. CMOS output product Table 12 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Detection voltage*1 −VDET 0.95 V ≤ VDD ≤ 10.0 V 1.0 V ≤ −VDET(S) < 2.2 V −VDET(S) − 0.022 −VDET(S) −VDET(S) + 0.022 V 1 2.2 V ≤ −VDET(S) ≤ 5.0 V −VDET(S) × 0.99 −VDET(S) −VDET(S) × 1.01 V 1 Hysteresis width V HYS − −VDET × 0.03 −VDET × 0.05 −VDET × 0.07 V 1 Current consumption*2 ISS V DD = 10.0 V, VSENSE = −VDET(S) + 1.0 V − 0.50 0.90 μA 2 Operation voltage V DD − 0.95 − 10.0 V 1 Output current I OUT Output transistor Nch VDS *3 = 0.5 V VSENSE = 0.0 V VDD = 0.95 V 0.59 1.00 − mA 3 VDD = 1.2 V 0.73 1.33 − mA 3 VDD = 2.4 V 1.47 2.39 − mA 3 VDD = 4.8 V 1.86 2.50 − mA 3 Output transistor Pch VDD = 4.8 V 1.62 2.60 − mA 5 VDS *3 = 0.5 V VSENSE = 10.0 V VDD = 6.0 V 1.78 2.86 − mA 5 Detection voltage temperature coefficient*4 Δ−VDET ΔTa • −VDET Ta = −40°C to +85°C − ±100 ± 350 ppm/°C 1 Detection delay time*5 tDET V DD = 5.0 V − 40 − μs 4 Release delay time*6 tRESET V DD = 5.0 V −VDET(S) ≤ 2.4 V − 40 − μs 4 *1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the cent er value of the detection voltage range in Table 5 or Table 6) *2. The current flowing through the SENSE pin resistance is not included. *3. V DS: Drain-to-source voltage of the output transistor *4. The temperature change of the detection voltage [mV/ °C] is calculated by using the following equation. Δ−VDET ΔTa []mV/°C *1 = −VDET(S) (typ.)[]V *2 × Δ−VDET ΔTa • −VDET []ppm/°C *3 ÷ 1000 *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient *5. The time period from when the pulse voltage of 6.0 V → −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2. *6. The time period from when the pulse voltage of 0 V → −VDET(S) + 2.0 V or 6.0 V is applied to the SENSE pin to when VOUT reaches VDD / 2.

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 15 3. Hysteresis width (V HYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at point B − the voltage at point A = V HYS in "Figure 22 Timing Chart of S-1002 Series NA / NB Type " and "Figure 24 Timing Chart of S-1002 Series CA / CB Type "). Setting the hysteresis width between the detection voltage and the release voltage, prevents malfunction caused by noise on the input voltage. 4. Feed-through current The feed-through current is a current that flows instantaneously to the VDD pin at the time of detection and release of a voltage detector. The feed-through current is larg e in CMOS output product, small in Nch open-drain output product. 5. Oscillation In applications where an input resistor is connected ( Figure 20 ), taking a CMOS output (active "L") product for example, the feed-through current which is generated when the output goes from "L" to "H" (at the time of release) causes a voltage drop equal to [feed-through current] × [input resistance]. Since the VDD pin and the SENSE pin are shorted as in Figure 20 , the SENSE pin voltage drops at the time of release. Then the SENSE pin voltage drops below the detection voltage and the output goes from "H" to "L". In this status, the feed-through current stops and its resultant voltage drop disappears, and the output goes from "L" to "H". The feed-through current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. (CMOS output product) RA VIN GND VDD RB VDD VSS OUTSENSE Figure 20 Example for Bad Implementation Due to Detection Voltage Change

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 18 2. SENSE pin 2. 1 Error when detection voltage is set externally By connecting a node that was resistance-divided by the resistor (R A) and the resistor (R B) to the SENSE pin as seen in Figure 25, the detection voltage can be set externally. For conventional products without the SENSE pin, R A cannot be too large since the resistance-divided node must be connected to the VDD pin. This is because a feed-through current will flow through the VDD pin when it goes from detection to release, and if R A is large, problems such as oscillation or larger error in the hysteresis width may occur. In the S-1002 Series, R A and RB are easily made larger since the resistance-divided node can be connected to the SENSE pin through which no feed-through cu rrent flows. However, be careful of error in the current flowing through the internal resistance (R SENSE) that will occur. Although RSENSE in the S-1002 Series is large (5 M Ω min.) to make the error small, R A and R B should be selected such that the error is within the allowable limits. 2. 2 Selection of R A and RB In Figure 25 , the relation between the external setting detection voltage (V DX) and the actual detection voltage (−VDET) is ideally calculated by the equation below. VDX = −VDET × ()1 + RA RB

• ·· (1) However, in reality there is an error in the current flowing through R SENSE. When considering this error, the relation between V DX and −VDET is calculated as follows. VDX = −VDET × ()1 + RA RB || RSENSE = −VDET ×  1 + RA RB × RSENSE RB + RSENSE = −VDET × ()1 + RA RB + RA RSENSE By using equations (1) and (2), the error is calculated as −VDET × RA RSENSE The error rate is calculated as follows by dividing the error by the right-hand side of equation (1). RA × RB RSENSE × (RA + RB) × 100 [%] = RA || RB RSENSE × 100 [%] ··· (3) As seen in equation (3), the smaller the resistance values of R A and R B compared to R SENSE, the smaller the error rate becomes. Also, the relation between the external setting hysteresis width (V HX) and the hysteresis width (V HYS) is calculated by equation below. Error due to R SENSE also occurs to the relation in a similar way to the detection voltage. VHX = V HYS × ()1 + RA RB
• ·· (4) VSS OUT VDD SENSE RA RB VDX −VDET RSENSE Figure 25 Detection Voltage External Setting Circuit Caution If R A and R B are large, the SENSE pin input impedance becomes higher and may cause a malfunction due to noise. In this case, connect a capacitor between the SENSE pin and the VSS pin.

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 21 3. Other characteristics 3. 1 Temperature characteristics of detection voltage The shaded area in Figure 31 shows the temperature characteristics of detection voltage in the operation temperature range. −40 +25 +0.945 mV/°C −VDET [V] +85 Ta [°C] −0.945 mV/°C −VDET25 *1. −VDET25 is a detection voltage value at Ta = +25°C. Figure 31 Temperature Characteristics of Detection Voltage (Example for −VDET = 2.7 V) 3. 2 Temperature characteristics of release voltage The temperature change Δ+VDET ΔTa of the release voltage is calculated by using the temperature change Δ−VDET ΔTa of the detection voltage as follows: Δ+VDET ΔTa = +VDET −VDET Δ−VDET ΔTa The temperature change of the release voltage and the detection voltage has the same sign consequently. 3. 3 Temperature characteristics of hysteresis voltage The temperature change of the hysteresis voltage is expressed as Δ+VDET ΔTa − Δ−VDET ΔTa and is calculated as follows: Δ+VDET ΔTa − Δ−VDET ΔTa = VHYS −VDET Δ−VDET ΔTa

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 22  Precautions

• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.
• In CMOS output product of the S-1002 Series, the feed-through current flows at the time of detection and release. If the VDD pin input impedance is high, malfunction may occur due to the voltage drop by the feed-through current when releasing.
• In CMOS output product, oscillation may occur if a pull-down resistor is connected and falling speed of the SENSE pin voltage (V SENSE) is slow near the detection voltage when the VDD pin and the SENSE pin are shorted.
• When designing for mass production using an applicati on circuit described herein, the product deviation and temperature characteristics of the external parts should be taken into consideration. SII shall not bear any responsibility for patent infringements related to products using the circuits described herein.
• SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 23  Characteristics (Typical Data) 1. Detection voltage ( −VDET), Release voltage (+VDET) vs. Temperature (Ta) S-1002Cx10 V DD = 5.0 V 1.2 VDET, VDET [V] 40 85 755025025 Ta [C] 1.1 1.0 0.9 0.8 VDET VDET S-1002Cx24 V DD = 5.0 V 2.6 VDET, VDET [V] 40 85 755025025 Ta [C] 2.5 2.4 2.3 2.2 VDET VDET S-1002Cx50 V DD = 5.0 V 5.4 VDET, VDET [V] 40 85 755025025 Ta [C] 5.2 5.0 4.8 4.6 VDET VDET 2. Hysteresis width (V HYS) vs. Temperature (Ta) S-1002Cx10 V DD = 5.0 V VHYS [%] 40 85 755025025 Ta [C] 7.0 6.0 5.0 4.0 3.0 S-1002Cx24 V DD = 5.0 V VHYS [%] 40 85 755025025 Ta [C] 7.0 6.0 5.0 4.0 3.0 S-1002Cx50 V DD = 5.0 V VHYS [%] 40 85 755025025 Ta [C] 7.0 6.0 5.0 4.0 3.0

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 24 3. Detection voltage ( −VDET) vs. Power supply voltage (V DD) S-1002Cx10 1.030 1.020 1.010 1.000 0.990 0.980 0.970 V DD [V] VDET [V] Ta = 85C Ta = 25C Ta = 40C S-1002Cx24 2.430 2.420 2.410 2.400 2.390 2.380 2.370 V DD [V] VDET [V] Ta = 85C Ta = 25C Ta = 40C S-1002Cx50 5.050 VDD [V] VDET [V] 5.025 5.000 4.975 4.950 Ta = 85C Ta = 25C Ta = 40C 4. Hysteresis width (V HYS) vs. Power supply voltage (V DD) S-1002Cx10 VDD [V] 7.0 6.0 5.0 4.0 3.0 VHYS [%] Ta = 85CTa = 25C Ta = 40C S-1002Cx24 VDD [V] 7.0 6.0 5.0 4.0 3.0 VHYS [%] Ta = 85CTa = 25C Ta = 40C S-1002Cx50 VDD [V] 7.0 6.0 5.0 4.0 3.0 VHYS [%] Ta = 85CTa = 25C Ta = 40C

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 25 5. Current consumption (I SS) vs. Power supply voltage (V DD) S-1002Cx10 Ta = +25°C, V SENSE = −VDET(S) − 0.1 V (during detection) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx10 Ta = +25°C, V SENSE = −VDET(S) + 0.1 V (during release) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx24 Ta = +25°C, V SENSE = −VDET(S) − 0.1 V (during detection) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx24 Ta = +25°C, V SENSE = −VDET(S) + 0.1 V (during release) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx50 Ta = +25°C, V SENSE = −VDET(S) − 0.1 V (during detection) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx50 Ta = +25°C, V SENSE = −VDET(S) + 0.1 V (during release) 1.00 VDD [V] 0.80 0.60 0.40 0.20 0.00 ISS [A]

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 26 6. Current consumption (I SS) vs. SENSE pin input voltage (V SENSE) S-1002Cx10 Ta = +25°C, V DD = −VDET(S) + 1.0 V, VSENSE = 0.0 V → 10.0 V 1.00 VSENSE [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx24 Ta = +25°C, V DD = −VDET(S) + 1.0 V, VSENSE = 0.0 V → 10.0 V 1.00 VSENSE [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] S-1002Cx50 Ta = +25°C, V DD = −VDET(S) + 1.0 V, VSENSE = 0.0 V → 10.0 V 1.00 VSENSE [V] 0.80 0.60 0.40 0.20 0.00 ISS [A] 7. Current consumption (I SS) vs. Temperature (Ta) S-1002Cx10 V DD = −VDET(S) + 1.0 V, V SENSE = −VDET(S) + 1.0 V (during release) 0.30 40 85 755025025 Ta [C] 0.25 0.20 0.15 0.10 0.05 0.00 ISS [A] S-1002Cx24 V DD = −VDET(S) + 1.0 V, V SENSE = −VDET(S) + 1.0 V (during release) 0.30 40 85 755025025 Ta [C] 0.25 0.20 0.15 0.10 0.05 0.00 ISS [A] S-1002Cx50 V DD = −VDET(S) + 1.0 V, V SENSE = −VDET(S) + 1.0 V (during release) 0.30 −40 85 7550250−25 Ta [°C] 0.25 0.20 0.15 0.10 0.05 0.00 ISS [µA]

VOLTAGE DETECTOR WITH SENSE PIN Rev.1.1_00 S-1002 Series Seiko Instruments Inc. 27 8. Nch transistor output current (I OUT) vs. VDS 9. Pch transistor output current (I OUT) vs. VDS S-1002Nx12 Ta = +25°C, V SENSE = 0.0 V (during detection) 20.0 0.0 0.0 6.0 IOUT [mA] VDS [V] 15.0 10.0 5.0 VDD = 6.0 V VDD = 4.8 V VDD = 3.6 V VDD = 2.4 V VDD = 1.2 V VDD = 0.95 V S-1002Cx12 Ta = +25°C, V SENSE = −VDET(S) + 1.0 V (during release) 40.0 0.0 0.0 10.0 IOUT [mA] VDS [V] 2.0 4.0 6.0 8.0 30.0 20.0 10.0 VDD = 8.4 V VDD = 1.2 V VDD = 0.95 V VDD = 7.2 V VDD = 6.0 V VDD = 4.8 V VDD = 3.6 V VDD = 2.4 V 10. Nch transistor output current (I OUT) vs. Power supply voltage (V DD) 11. Pch transistor output current (I OUT) vs. Power supply voltage (V DD) S-1002Nx12 V DS = 0.5 V, V SENSE = 0.0 V (during detection) 4.0 0.0 0.0 10.0 IOUT [mA] VDD [V] 3.0 2.0 1.0 2.0 4.0 6.0 8.0 Ta = 40C Ta = 25CTa = 85C S-1002Cx12 V DS = 0.5 V, V SENSE = −VDET(S) + 1.0 V (during release) 5.0 0.0 0.0 10.0 IOUT [mA] VDD [V] 2.0 4.0 6.0 8.0 4.0 3.0 2.0 1.0 Ta = 40C Ta = 25C Ta = 85C 12. Minimum operation voltage (V OUT) vs. Power supply voltage (V DD) S-1002Nx10 V SENSE = VDD, Pull-up to V DD, Pull-up resistance: 100 k Ω 1.8 0.0 0.0 1.6 VOUT [V] VDD [V] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Ta = 40C Ta = 25C Ta = 85C S-1002Nx10 V SENSE = VDD, Pull-up to 10 V, Pull-up resistance: 100 k Ω 12.0 0.0 0.0 1.6 VOUT [V] VDD [V] 10.0 8.0 6.0 4.0 2.0 Ta = 40C Ta = 25C Ta = 85C 13. Minimum operation voltage (V OUT) vs. SENSE pin input voltage (V SENSE) S-1002Nx10 V DD = 0.95 V, Pull-up to V DD, Pull-up resistance: 100 k Ω 1.8 0.0 0.0 1.6 VOUT [V] VSENSE [V] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Ta = 40C Ta = 25CTa = 85C S-1002Nx10 V DD = 0.95 V, Pull-up to 10 V, Pull-up resistance: 100 k Ω 12.0 0.0 0.0 1.6 VOUT [V] VSENSE [V] 10.0 8.0 6.0 4.0 2.0 Ta = 40C Ta = 25C Ta = 85C Remark V DS: Drain-to-source voltage of the output transistor

VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_00 Seiko Instruments Inc. 28 14. Dynamic response vs. Output pin capacitance (C OUT) S-1002Cx10 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.001 Output pin capacitance [F] 0.01 0.1 0.10.0001 0.010.001 tPHL tPLH S-1002Cx24 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.001 Output pin capacitance [F] 0.01 0.1 0.10.0001 0.010.001 tPHL tPLH S-1002Cx50 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.001 Output pin capacitance [F] 0.01 0.1 0.10.0001 0.010.001 tPLH tPHL S-1002Nx10 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.01 Output pin capacitance [F] 100 0.1 0.10.0001 0.010.001 tPHL tPLH S-1002Nx24 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.01 Output pin capacitance [F] 100 0.1 0.10.0001 0.010.001 tPHL tPLH S-1002Nx50 Ta = +25°C, V DD = −VDET(S) + 1.0 V 0.00001 Response time [ms]0.01 Output pin capacitance [F] 100 0.1 0.10.0001 0.010.001 tPHL tPLH

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