RFP4N35 VBSEMI | Alldatasheet

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  • Low Gate Charge Q g Results in Simple Drive Requirement  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche Voltage and Current  Compliant to RoHS directive 2002/95/EC Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω)V GS = 10 V 1.7 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single Available RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID AContinuous Drain Current TC = 100 °C 4.2 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.48 W/°C Single Pulse Avalanche Energyb EAS 325 mJ Repetitive Avalanche Currenta IAR 4 A Repetitive Avalanche Energya EAR 6m J Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 2.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

S N-Channel MOSFET G D T O-220AB Top View GD S 4.5 N-Channel 650 V (D-S) MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 5 °C/W Maximum Junction-to-Case (Drain) RthJC -2 .1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 650 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, I D = 1 mAd - 670 - mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 25 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) V GS = 10 V ID = 3.1 Ab - - Ω Forward Transconductance gfs VDS = 50 V, ID = 3.1 A 3.9 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1017 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -7 . 0- Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1912 - VDS = 520 V, f = 1.0 MHz - 48 - Effective Output Capacitance Coss eff. VDS = 0 V to 520 Vc -8 4- Total Gate Charge Qg VGS = 10 V ID = 3.2 A, VDS = 400 V see fig. 6 and 13b -- 4 8 nC Gate-Source Charge Qgs -- 1 2 Gate-Drain Charge Qgd -- 1 9 Turn-On Delay Time td(on) VDD = 325 V, ID = 3.2 A RG = 9.1 Ω, RD = 62 Ω, see fig. 10b -1 4 - ns Rise Time tr -2 0- Turn-Off Delay Time td(off) -3 4- Fall Time tf -1 8- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode A Pulsed Diode Forward Currenta ISM -- 2 1 Body Diode Voltage VSD TJ = 25 °C, IS = 3.2 A, VGS = 0 Vb -- 1 . 5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µsb - 493 739 ns Body Diode Reverse Recovery Charge Q rr -2 . 1 3 . 2 µ C Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G 7 1. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Tr ansfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.1 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 V = 100V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 2.0 3.5 5.0 5.5 8.0 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 3.2A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-So urce Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 400 800 1200 1600 2000 1 10 100 1000 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 3.2 A V = 130VDS V = 325VDS V = 520VDS 0.1 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 T , Case Temperature ( C) I , Drain Current (A) D VDS Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V - VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (s) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) A R G IAS 0.01 Ωtp D.U.T. LVDS - VDD Driver A 15 V 20 V tp V DS IAS E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche Cu rrent Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 25 50 75 100 125 150 200 400 600 800 Starting T , Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 2.3A 3.3A 700 720 740 760 780 800 0123456 A DSav avI , Avalanche Current (A) V , Avalanche Voltage (V) QG QGS QGD VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor crurent D = P.W. Period * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD

  • dV/dt controlled by RG
  • Driver same type as D.U.T.
  • ISD controlled by duty factor "D"
  • D.U.T. - device under test D.U.T. Circuit layout considerations
  • Low stray inductance
  • Ground plane
  • Low leakage inductance current transformer E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com
  • M = 1.32 mm to 1.62 mm (dim ension including protru si on) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP4N35 A ll data sheet.com