RFP2N15 VBSEMI | Alldatasheet
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a. Repetitive rating; pulse widt h limi ted by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 4.8 A (see fig. 12). c. I SD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Wh en mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 200 RDS(on) ()V GS = 10 V 0.85 Qg (Max.) (nC) 13 Qgs (nC) 3.0 Qgd (nC) 7.9 Configurat ion Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SY MBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 5.0 ATC = 100 °C 4.0 Pulsed Dra in Currenta IDM 20 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount) e 0.020 Single Puls e Avalanche Energy b EAS 161 mJ Repetitive Avalanche Current a IAR 4.8 A Repetiti ve Avalanche Energy a EAR 4.2 mJ Maximum Po wer Dissipation TC = 25 °C PD
42 W Maximum Power
Dissipation (PCB mount) e TA = 25 °C 2.5 Peak Dio de Recovery dV/dt c dV/dt 5.0 V/ns Operatin g Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Sold ering Recommendations (Peak temperature) d for 10 s 260 N-Channel 200 V (D-S) MOSFET
FEATURES
- TrenchFET ® Power MOSFET 175 °C Jun c tion Temperature PWM Optimized 100 % R g Tested Compliant to Ro HS Directive 2002/95/EC
APPLICATIONS
Primary Side Switch T O-220AB T op V i e w GD S RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
a. Wh e n mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maxi mum Junction-to-Ambient RthJA -- 1 10 °C/WMaximum Junction-to-Ambient (PCB mount) a RthJA -- 5 0 Maximum Junction-to-Cas e (Drain) RthJC -- 3 .0 SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER SYMB OL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Dra in-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temper ature Coefficient VDS/TJ Reference to 25 °C, I D = 1 mA - 0. 29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 2 5 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 2 Drain-Source On-State Resistance RDS(on) V GS = 10 V I D = 2.9 A b - 0.85 Forwar d Transconductance gfs VDS = 50 V, ID = 2.9 A b 1.7 - - S Dynamic Input Capa citance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 185 - pFOutput Ca pacitance Coss - 100 - Rev erse Transfer Capacitance Crss -3 0- Total Gate Charge Qg VGS = 10 V ID = 4.8 A, VDS = 160 V, see fig. 6 and 13 b nC Gate-Sou rce Charge Qgs -- 3 . 0 Gate-Drain Charge Qgd -- 7 . 9 Turn-On D elay Time td(on) VDD = 100 V, ID = 4.8 A, RG = 18 , RD = 20 , see fig. 10 b -7 . 2- nsRise T ime tr -2 2- Turn-Off Delay Time td(off) -1 9 - Fall Time tf -1 3- Inte rnal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- Drain-Sour ce Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the i ntegral reverse p - n junction diode -- 4 . 8 A Pulsed Diode Forward Current a ISM -- 1 9 Body Diode Voltage VSD TJ = 25 °C, IS = 4.8 A, VGS = 0 V b -- 1 . 8 V Bo dy Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs b - 150 300 ns B ody Diode Reverse Recovery Charge Q rr -0 .91 1 . 8 μ C Forward Turn-On Time ton Intrinsic turn-on time is negligib le (turn-on is dominated by LS and LD) D S G S D G - - 13.0 RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
ARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Char acteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Ty pical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
Fig. 5 - Typica l Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
Fig. 9 - Maxim um Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
Fig. 12a - Un clamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
- M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. RFP2N15 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com