RFP2N10L

RFP2N10L VBSEMI | Alldatasheet

Document overview

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Technical content

N-Channel 100-V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  175 °C Junctio n Temperature  Low Thermal Resistance Package  100 % R g Tested

APPLICATIONS

 Isolated DC/DC Converte rs PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω)I D (A) 100 0.092 at VGS = 10 V 18 N-Channel MOSFET G D S Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage de rating. d. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless ot herwise noted Parameter Symbol Limit Uni t Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 125 °C 15 Pulsed Drain Current IDM 68 Avalanche Current L = 0.1 mH IAS 18 Single Pulse Avalanche Energyb EAS 200 mJ Maximum Power Dissi pationb TC = 25 °C PD W TA = 25 °Cd 3.75 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit U nit Junction-to-Ambient PCB Mount (TO-263)d RthJA 40 °C/W Junction-to-Case (Dr ain) RthJC 0.4 RoHS COMPLIANT T O-220AB Top View GD S 105 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

Notes: a. Pulse test; pulse w idth ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol Test Cond itions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A 0.127 ΩVGS = 10 V, ID = 20 A, TJ = 125 °C 0.110 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.121 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pFOutput Capacitance Coss 260 Reverse Transfer Capacitance Crss 110 Total Gate Chargec Qg VDS = 100 V, VGS = 10 V, ID = 65 A nCGate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg 0.5 1.7 3.3 Ω Tur n- On Delay Timec td(on) VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω nsRise Timec tr 120 Turn-Off Delay Ti mec td(off) 25 Fall Tim ec tf 50 Source-Drain Diode Ratings an d Characteristics TC = 25 °Cb Continuous Current IS 18 A Pulsed Current ISM 68 Forward Voltagea VSD IF = 65 A, VGS = 0 V 1.0 1.5 V Reverse Recov ery Time trr IF = 50 A, di/dt = 100 A/µs 130 200 ns Peak Re verse Recovery Current IRM(REC) 81 2A Reverse Recover y Charge Qrr 0.52 1.2 µC 4.8 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted Output Characteristics Transc onductance Capacitance 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 6 V 2 V - Drain Current (A)I D 5 V 3 V 120 150 180 0 20 40 60 80 100 120 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 200 400 600 800 1000 1200 1400 0 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Cu rrent Gate Charge 100 120 140 012 34567 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 25 °C - 55 °C TC = 125 °C 0.00 0.10 0.20 0.30 0.40 0 20 40 60 80 100 120 ID - Drain Current (A) VGS = 10 V - On-Resistance (Ω)rDS(on) 0 25 50 75 100 125 150 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 100 V ID = 65 A 40 60 80 100 120 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted On-Resistance vs. Junction Temperatu re Avalanche Current vs. Time rDS(on) - On-Resistance (Normalized) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A tin (s) 1000 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Dio de Forward Voltage Drain Source Breakdown vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 0.3 0.6 0.9 1.2 TJ = 25 °CTJ = 150 °C 180 190 200 210 220 230 240 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (V)V(BR)DSS ID = 1.0 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

Maximum Avalanche and Drain Current vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Drain Current (A)I D Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS minimum V GS at which rDS(on) is specified 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Drain Current (A)I D 1 ms 10 ms 100 ms DC 10 µs 100 µs 100 rDS(on) Limited* Normalized Thermal Transient Im pedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dimensi on including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP2N10L A ll data sheet.com