RFP12P10

RFP12P10 VBSEMI | Alldatasheet

Document overview

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Technical content

P-Channel 100 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS Directive 2002/95 /EC

APPLICATIONS

P o w e r S w i t c h  Load Switch in High Current Applications  DC/DC Converters Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) - 100 0. at V GS = - 10 V - 18 370.180 at VGS = - 4.5 V - 14 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 18 A TC = 70 °C - 13 Pulsed Drain Current (t = 300 µs) IDM - 100 Avalanche Current IAS - 10 Single Avalanche Energya L = 0.1 mH EAS 31 mJ Maximum Power Dissipationa TC = 25 °C PD 11.7b W TA = 25 °Cc 1.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/W Junction-to-Case (Drain) RthJC 9 TO-220AB GD S S G D P-Channel MOSFET 167 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may ca use permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Ma x. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 18 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 14 A 0. VGS = - 4.5 V, ID = - 12 A 0.180 Forward Transconductancea gfs VDS = - 20 V, ID = - 14 A 20 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 20 V, f = 1 MHz 1765 pFOutput Capacitance Coss 330 Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg VDS = - 20 V, VGS = - 10 V, ID = - 14 A 67 100 nCGate-Source Chargec Qgs 13.5 Gate-Drain Chargec Qgd 14 Gate Resistance Rg f = 1 MHz 0.5 2.5 5  Tur n-On Del ay Timec td(on) VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  10 20 nsRise Timec tr 11 20 Turn-Off Delay Timec td(off) 42 63 Fall Timec tf 12 20 Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS - 18 A Pulsed Current ISM - 100 Forward Voltagea VSD IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs 38 57 ns Peak Reverse Recove ry Current IRM(REC) 2.3 3.5 A Reverse Recovery Charge Qrr 40 60 nC 167 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Transconduc tance 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.2 0.4 0.6 0.8 1.0 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 6 12 18 24 30 gfs - Transconductance (S) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C On-Resistance vs. Drain Current On-Resistance vs. Gate-to- Source Voltage Gate Charge 0.150 0.200 0.250 0.300 0.350 0.400 0 2 04 06 08 0 1 0 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0.010 0.016 0.022 0.028 0.034 0.040 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 14 A 0 1 42 84 25 67 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 32 V VDS = 10 V VDS = 20 V ID = 14 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Ju nction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 800 1600 1700 1800 1900 0 1 02 03 04 0 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.7 1.0 1.3 1.6 1.9 2.2 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) -O n - R e s i s t a n c e(Nor malized) TJ - Junction Temperature (°C) ID = 14 A VGS = 10 V VGS = 4.5 V Threshold Voltage Drain Source Breakdown vs. Junction Temperatur e Current Derating 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T e m p e r a t u r e (°C) ID = 250 μA - 50 - 25 0 25 50 75 100 125 150 VDS (V) Drain-to-Source Voltage TJ -T em p e r a t u r e (°C) ID = 250 μA 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Single Pulse Avalanche Current Capability vs. Time 100 IDAV (A) Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified DC, 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dim ension including pr otrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4 .65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RFP12P10 A ll data sheet.com