RD33FG DYNEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
www.dynexsemi.com
FEATURES
I Optimised For High Current Rectifiers I High Surge Capability I Very Low On-state Voltage
APPLICATIONS
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: RD33FG03 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. KEY PARAMETERS VRRM 600V IF(AV) (max) 3997A IFSM (max) 46750A RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 Fig. 1 Package outline Outline type code: G (See Package Details for further information) Conditions VRSM = VRRM600 500 400 300 200 100 RD33FG06 RD33FG05 RD33FG04 RD33FG03 RD33FG02 RD33FG01 Part and Ordering Number Repetitive Peak Reverse Voltage VRRM V
www.dynexsemi.com Symbol IF(AV) IF(RMS) IF IF(AV) IF(RMS) IF Test Conditions Half wave resistive load Half wave resistive load Units A A A A A A Max. 3830 6010 6080 2710 4260 4210 Parameter Mean forward current RMS value Continuous (direct) forward current Mean forward current RMS value Continuous (direct) forward current Single Side Cooled Double Side Cooled CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 3997 A - 6278 A - 6358 A Half wave resistive load 2831 A - 4447 A - 4401 A Tcase = 85˚C unless otherwise stated
www.dynexsemi.com Units mA A µC V m Ω Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature range Clamping force Parameter Surge (non-repetitive) forward current I 2t for fusing Surge (non-repetitive) forward current I 2t for fusing Test Conditions 10ms half sine, Tcase = 175˚C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 175˚C VR = 0 Symbol IFSM I2t IFSM I2t SURGE RATINGS Units kA A2s kA A2s Max. 37.4 7.0 x 106 46.75 10.93 x 106 Test Conditions At VRRM , Tcase = 200˚C IF = 1000A, dIRR /dt = 3A/µs, Tcase = 200˚C, VR = 100V At Tvj = 200˚C At Tvj = 200˚C Parameter Peak reverse current Peak reverse recovery current Total stored charge Threshold voltage Slope resistance CHARACTERISTICS Symbol IRM Irr Q S VTO rT Max. 160 0.6 0.0872 Min. Test Conditions Double side cooled DC Single side cooled Anode DC Cathode DC Clamping force 12.0kN Double side (with mounting compound) Single side Forward (conducting) Reverse (blocking) THERMAL AND MECHANICAL RATINGS Symbol R th(j-c) R th(c-h) Tvj Tstg Fm Units ˚CW ˚CW ˚CW ˚CW ˚CW kN Max. 0.032 0.064 0.064 0.008 0.016 225 200 200 13.2 Min. –55 10.8
www.dynexsemi.com CURVES Fig. 2 Maximum (limit) forward characteristics Fig. 3 Power dissipation Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt 500 1000 1500 2000 2500 3000 Instantaneous forward voltage, V F - (V) Instantaneous forward current, IF - (A) Tj = 200˚C 1000 2000 3000 4000 0 500 1000 1500 2000 2500 3000 3500 4000 Mean forward current, IF(AV) - (A) Mean power dissipation - (W) dc 1/2 wave 3 phase 6 phase 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 Stored charge QS - (µC) Conditions: Tj = 200˚C VR = 100V IF = 2000A IRM Q S IF dI/dt 1000 100 Reverse recovery current IRR - (A) Max. QS Max. IRR
www.dynexsemi.com Fig. 6 Maximum (limit) transient thermal impedanceFig. 5 Surge (non-repetitive) forward current vs time (with 50% VRRM @ Tcase = 175˚C) 11 0 1 2 3 5 1 0 2 0 5 0 I2t value - (A2s x 106) ms Cycles at 50Hz Duration Peak half sine forward current - (kA) I2t = Î2 x t I2t 0.1 0.01
0.001 Thermal Impedance - Junction to case (˚C/W)
0.001 0.01 0.1 1.0 10 Time - (s) Double side cooled Anode side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.032 0.034 0.044 0.057 Anode side 0.064 0.066 0.076 0.089
www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø 3.6 x 2.0 deep (in both electrodes) Ø 34 nom 27.0 25.4 Cathode AnodeØ 34 nom Ø 58.5 max Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Note: 1. Package maybe supplied with pins and/or tags.
www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5415-2 Issue No. 2.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.