DIM300XCM45-F000 DYNEX | Alldatasheet

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DS5918 1.2 December 2007 (LN25834) /c1/c2/c3/c4/c5/c6/c5/c7/c8/c5/c9/c10/c11/c12/c4/c13/c5/c14/c4/c15/c16/c17/c7/c12/c18/c19/c17/c20/c7/c21/c5/c22/c16/c15/c16/c20/c4/c18/c23/c5/c10/c7/c18/c18/c16/c12/c3/c20/c7/c12/c5/c24/c7/c2/c18/c23/c5/c22/c16/c12/c17/c7/c25/c12/c23/c5/c26/c12/c16/c20/c4 /c18/c5/c27/c16/c12/c3/c18/c7/c15/c23/c5/c22/c28/c29/c5/c30/c22/c31 /c32/c4/c25/c33/c5/c34/c35/c35/c36/c37/c38/c39/c6/c40/c41/c41/c36/c40/c38/c38/c40/c38/c38/c5/c5/c31/c2/c13/c33/c5/c34/c35/c35/c36/c37/c38/c39/c6/c40/c41/c41/c36/c40/c38/c38/c40/c40/c38 /c42/c42/c42/c43/c18/c11/c12/c4/c13/c44/c4/c15/c16/c43/c17/c7/c15 /c24/c4/c3/c16/c44/c20/c4/c21/c4/c18/c5/c16/c12/c5/c45/c12/c3/c25/c2/c12/c18/c5/c2/c12/c18/c5/c46/c2/c25/c4/c44/c33/c5/c28/c7/c5/c30/c9/c41/c35/c29/c41/c29/c5/c24/c4/c3/c16/c44/c20/c4/c21/c4/c18/c5/c47/c8/c8/c16/c17/c4/c33/c5/c10/c7/c18 /c18/c16/c12/c3/c20/c7/c12/c5/c24/c7/c2/c18/c23/c5/c22/c16/c12/c17/c7/c25/c12/c23/c5/c26/c12/c16/c20/c4/c18/c5/c27/c16/c12/c3/c18/c7/c15/c23/c5/c22/c28/c29/c5/c30/c22/c31

FEATURES

/G1 10µs Short Circuit Withstand /G1 Soft Punch Through Silicon /G1 Lead Free construction /G1 Isolated MMC Base with AlN Substrates /G1 High Thermal Cycling Capability /G1 High isolation module

APPLICATIONS

/G1 High Reliability Inverters /G1 Motor Controllers /G1 Traction Drives /G1 Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-direction al switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. The DIM300XCM45-F000 is a 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated ba se plate and low inductance construction enabling circ uit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM300XCM45-F000 Note: When ordering, please use the complete part number KEY PARAMETERS V CES 4500V V CE(sat) * (typ) 2.9 V I C (max) 300A I C(PK) (max) 600A *(measured at the power busbars and not the auxiliary terminals) Fig. 1 Chopper circuit diagram Outline type code: X (See package details for further information) Fig. 2 Electrical connections - (not to scale)

2/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of t he package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage V GE =0V 4500 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase =100 ° C 300 A IC(PK) Peak collector current 1ms, T case=115 ° C 600 A Pmax Max.transistor power dissipation Tcase =25 ° C, Tj =150 ° C 5.2 kW I2t Diode I 2t value (Diode arm) V R =0,tp =10ms,Tj =125 ° C 51 kA 2s Visol Isolation voltage-per module Commoned terminals to base plate. AC RMS,1 min,50Hz 10.2 kV QPD Partial discharge-per module IEC1287.V1 =6900V, V2 =5100V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Critical Tracking Index) > 600 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance -transistor (per switch) Continuous dissipation - junction to case - 24 ° C/kW Rth(j-c) Thermal resistance -diode (per switch) Continuous dissipation - junction to case - 48 ° C/kW Rth(c-h) Thermal resistance -case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - 8 ° C/kW Tj Junction temperature Transistor - - 150 ° C Diode - - 125 ° C Tstg Storage temperature range - -40 - 125 ° C Screw torque Mounting M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/7 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

T case = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units VGE =0V,VCE =VCES 2 mA ICES Collector cut-off current VGE =0V,VCE =VCES ,Tcase =125 ° C 60 mA IGES Gate leakage current VGE = ± 20V,VCE =0V 4 uA VGE(TH) Gate threshold voltage IC =80mA,VGE =VCE 5.5 6.5 7.0 V VGE =15V,IC =300A 2.9 V VCE(sat) † Collector-emitter saturation voltage VGE =15V,IC =300A,TVJ =125 ° C 3.5 V IF Free-wheel/Anti-parallel Diode forward current DC 300 A IFM Free-wheel/Anti-parallel Diode maximum forward current tp =1ms 600 A IF =300A 3.0 V VF Free-wheel/Anti-parallel Diode forward voltage IF =300A,TVJ =125 ° C 3.1 V Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 65 nF Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 0.9 nF LM Inductance per arm -- 30 nH RINT Internal transistor resistance 270 µ/G1 Tj /G2125 ° C,VCC /G23000V, I 1 1400 A SCData Short circuit I SC t p = 10 us, I 2 VCE(max)=VCES – L*.di/dt IEC 60747-9 1250 A Note: † Measured at the power busbars and not the auxiliary terminals *L is the circuit inductance + L M

4/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time I C =300A 5.0 us tf Fall time V GE =±15V 250 ns EOFF Turn-off energy loss V CE =2250V 750 mJ td(on) Turn-on delay time RG(ON) =10/G1 RG(OFF)=22/G1 850 ns tr Rise time C ge =55nF 220 ns EON Turn-on energy loss L ~200nH 900 mJ Qg Gate charge 10 uC Qrr Diode reverse recovery charge IF =300A,VCE =2250V, 240 uC Irr Diode reverse recovery current dIF/dt =1500A/us 350 A Erec Diode reverse recovery energy 300 mJ Tcase = 125° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time I C =300A 5.2 us tf Fall time V GE =±15V 250 ns EOFF Turn-off energy loss V CE =2250V 850 mJ td(on) Turn-on delay time RG(ON) =10/G1 RG(OFF)=22/G1 800 ns tr Rise time C ge =55nF 220 ns EON Turn-on energy loss L ~200nH 1350 mJ Qrr Diode reverse recovery charge IF =300A,VCE =2250V, 430 uC Irr Diode reverse recovery current dIF/dt =1500A/us 410 A Erec Diode reverse recovery energy 530 mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/7 www.dynexsemi.com 100 150 200 250 300 350 400 450 500 Collector-emitter voltage, Vce (V) Collector current, Ic (A) Vg=10V Vg=12V Vg=15V Vg=20V Tcase = 25° C 100 200 300 400 500 600 Collector-emitter voltage, Vce (V) Collector current, Ic (A) Vge=10V Vge=12V Vge=15V Vge=20V Tcase =125° C Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200 250 300 Collector current, Ic (A) Switching energy, Esw (mJ) Eon (mJ) Eoff (mJ) Erec (mJ) Conditions Vcc = 2250V Tc = 125° C Cge = 55nF Vge = +/- 15V Rg(on) = 10 Rg(off) = 22 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 40 50 60 Gate resistance, Rg (Ohms) Switching energy, - Esw (mJ) Eon (mJ) Eoff (mJ) Erec (mJ) Conditions: Vcc = 2250V Tc = 125° C Cge = 55nF Vge = +/- 15V Ic = 300A Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

6/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 100 150 200 250 300 350 400 450 500 550 600 Forward voltage, VF (V) Forward current, IF (A) 25ºC 125ºC 100 200 300 400 500 600 700 4000 4200 4400 4600 4800 5000 Collector emitter voltage, Vce (V) Collector current, Ic (A) Tcase = 125° C Vge = +/-15V Rg(off) =22ohms Module Chip Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 100 150 200 250 300 350 400 450 500 0 1000 2000 3000 4000 5000 Reverse voltage, VR -(V) Reverse recoery current, Irr-(A) Tj = 125 ºC 100 0.001 0.01 0.1 1 10 Time, (s) Transient thermal impedance, Zthj-c (° C/kW) Rth IGBT Rth Diode R 1.29 4.5 5.21 12.93 /c1 0.14 4.12 23.41 146.3 R 0.645 2.25 2.605 6.465 /c1 0.14 4.12 23.41 146.3 IGBT Diode Fig. 9 Diode reverse bias safe operating area Fig. 1 0 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/7 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1100g Module outline type code: X Fig. 11 Outline drawing

8/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semic onductors. Data with respect to air natural, force d air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)15 22 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. Inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.