DIM1200ASM45-TF000 DYNEX | Alldatasheet

Document overview

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Technical content

Replaces DS6248-2 DS6248-3 August 2023 (LN42736) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com

FEATURES

  • 10µs Short Circuit Withstand
  • High Thermal Cycling Capability
  • High Current Density Enhanced DMOS SPT
  • Isolated AlSiC Base With AlN Substrates
  • Lead Free Construction

APPLICATIONS

  • High Reliability Inverters
  • Motor Controllers
  • Traction Drives
  • Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi -directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1200ASM45-TF000 is a single switch 4500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and util ise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM1200ASM45-TF000 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 4500V VCE(sat) * (typ) 3.5V IC (max) 1200A IC(PK) (max) 2400A * Measured at the auxiliary terminals Fig. 1 Circuit configuration Outline type code: A (See Fig. 11 for further information) Fig. 2 Package 2(G) 1(E) 3(C) 5(C) 4(E) 8(E) 6(E) 7(C) 9(C)

2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maxim um Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum R atings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 4500 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase = 80°C 1200 A IC(PK) Peak collector current 1ms, Tcase = 110°C 2400 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 125°C 12.5 kW I2t Diode I2t value VR = 0, tp = 10ms, Tj = 125°C 460 kA2s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 7.4 kV QPD Partial discharge – per module IEC1287, V1 = 4800V, V2 = 3500V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance – transistor Continuous dissipation - junction to case - - 8 °C/kW Rth(j-c) Thermal resistance – diode Continuous dissipation - junction to case - - 16 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 6 °C/kW Tj Junction temperature Transistor - - 125 °C Diode - - 125 °C Tstg Storage temperature range - -40 - 125 °C Screw torque Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 4 mA VGE = 0V, VCE = VCES, Tcase = 125°C 90 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 1 μA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.8 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1200A 3.5 V VGE = 15V, IC = 1200A, Tj = 125°C 4.4 V IF Diode forward current DC 1200 A IFM Diode maximum forward current tp = 1ms 2400 A VF Diode forward voltage IF = 1200A 2.9 V IF = 1200A, Tj = 125°C 3.1 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 150 nF Qg Gate charge ±15V 17 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 12 nF LM Module inductance 10 nH RINT Internal transistor resistance 90 μ SCData Short circuit current, ISC Tj = 125°C, VCC = 3400V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9 4800 A Note: * L is the circuit inductance + LM

4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1200A VGE = ±15V VCE = 2800V RG(ON) = 2.4 RG(OFF) = 2.7 Cge = 220nF LS ~ 165nH 2350 ns tf Fall time 400 ns EOFF Turn-off energy loss 2000 mJ td(on) Turn-on delay time 850 ns tr Rise time 290 ns EON Turn-on energy loss 5400 mJ Qrr Diode reverse recovery charge IF = 1200A VCE = 2800V dIF/dt = 3000A/μs 1050 μC Irr Diode reverse recovery current 1100 A Erec Diode reverse recovery energy 1470 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1200A VGE = ±15V VCE = 2800V RG(ON) = 2.4 RG(OFF) = 2.7 Cge = 220nF LS ~ 165nH 2450 ns tf Fall time 350 ns EOFF Turn-off energy loss 2250 mJ td(on) Turn-on delay time 850 ns tr Rise time 300 ns EON Turn-on energy loss 6700 mJ Qrr Diode reverse recovery charge IF = 1200A VCE = 2800V dIF/dt = 3000A/μs 1900 μC Irr Diode reverse recovery current 1175 A Erec Diode reverse recovery energy 3100 mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Collector-emitter voltage, VCE - (V) Collector current, IC - (A) 0 1 2 3 4 5 6 400 800 1200 1600 2000 2400 TJ = 25C Vge = 20V Vge = 15V Vge = 12V Vge = 10V Collector - emitter voltage, VCE - (V) Collector current, IC - (A) 0 1 2 3 4 5 6 7 8 400 800 1200 1600 2000 2400 TJ = 125C VGE = 20V VGE = 15V VGE = 12V VGE = 10V Collector current, IC - (A) Switching Energy, ESW - (J) 0 400 800 1200 1600 2000 2400 Conditions TCASE = 125°C VCE = 2800V Rg(on) = 2.4 Rg(off) = 2.7 CGE = 220nF VGE = +/-15V EON (J) EOFF (J) Erec (J) Gate Resistance, RG - () Switching Energy, ESW - (J) 1 2 3 4 5 6 7 Conditions TCASE = 125°C IC = 1200A VCE = 2800V CGE = 220nF VGE = +/-15V EON (J) EOFF (J) Erec (J)

6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Forward Voltage, Vf - (V) Forward Current, If - (A) 0 1 2 3 4 5 400 800 1200 1600 2000 2400 25C 125C Collector emitter voltage, Vce - (V) Collector current, Ic - (A) 0 1000 2000 3000 4000 5000 300 600 900 1200 1500 1800 2100 2400 2700 TCASE = 125C VGE = ±15V Rg(of f ) = 2.7 Cge = 220nF Chip Module Reverse Voltage, VR - (V) Reverse recovery current, Irr - (A) 0 1000 2000 3000 4000 5000 300 600 900 1200 1500 1800 2100 2400 2700 Tj = 125°C Pulse width, tp - (s) Transient thermal impedance, Zth(j-c) - (°C/kW) 0.001 0.01 0.1 1 10 0.1 100 IGBT Ri(°C/kW) 0.60 1.16 2.19 4.09 i(ms) 2.24 16.6 68.1 240 Diode Ri(°C/kW) 1.21 2.33 4.39 8.18 i(ms) 2.24 16.6 68.1 240 Rth IGBT Rth Diode

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 1700g Module Outline Type Code: A Fig. 11 Module outline drawing screwing depth max. 16 external connection external connection 3(C) 2(G) 1(E) 5(C) 7(C) 4(E) 6(E) 9(C) 8(E) 61.2±0.3 screwing depth max. 8 8 x 73 x M4 6 x M8 external connection external connection 3(C) 2(G) 1(E) 7(C) 9(C) 6(E) 8(E) 5(A) 4(C) 5 ±0.2 48 ±0.5 61.2±0.3 59.2 ±0.214 ±0.2 12 ±0.2 Ø 18 ±0.1 44 ±0.4 124 ±0.1 140 ±0.5 190 ±0.5 171±0.15 57±0.1 41 ±0.218 ±0.2 38±0.5

8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the produc t and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled docu ment and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of li fe, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extr eme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be suppl ied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and prod uct names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Tel: +44(0)1522 502753 / 502901 Web: http://www.dynexsemi.com Email: powersolutions@dynexsemi.com  Dynex Semiconductor Ltd. 2018 Technical Documentation – Not for resale.