MA1916

MA1916 DYNEX | Alldatasheet

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The purpose of the MA1916 is to encode serial data to allow error correction when the data is transmitted over a noisy communication link. As the name suggests, the unit contains two encoding elements. The Reed-Solomon encoder appends a checksum to a block of data, guarding against burst errors in a message. The convolution encoder continuously creates two code bits for each data bit it receives, increasing the noise immunity by doubling the band width of the message. The unit also contains a test pattern generator which can be connected to check the functionality of the RS encoder and to provide a message timing signal (SMC_OUT). Protection against a long error-burst can be increased by interleaving a number of message packets passing through the RS encoder. The MA1916 provides pin selectable interleave depths of 1, 4 or 5. Interleave depths of greater than 5 do not significantly improve performance. The MA1916 is designed to conform to the CCSDS standard for telemetry 101.0.B.2. It is manufactured in a radiation hard low power CMOS technology. This makes it ideal for use in satellite communications systems. The encoder reduces the risk of data corruption and allows the designer to minimize the transmitter power needed to establish an effective communications link.

FEATURES

n Radiation Hard CMOS-SOS Technology n Low Power Consumption n Latch-up Free n High SEU Immunity n CCSDS Standard RS (255, 223) n Selectable Interleave Depths of 1, 4 or 5 n 5MBit/sec Input Data Rate Figure 1: Block Diagram MA1916 Radiation Hard Reed-Solomon & Convolution Encoder Replaces June 1999 version, DS3590 -4.0 DS3590-5.0 January 2000

The function of the Reed-Solomon (RS) encoder is to take a block of 223 bytes of serial data and to append a checksum of 32 bytes. The purpose of the checksum is to allow error correction within the data block. One important feature of the Reed-Solomon algorithm is that it allows correction of a burst error which corrupts upto 16 consecutive bytes. If a number of messages are interleaved this length can be increased. The MA1916 provides pin selectable interleave depths of 1, 4 or 5 blocks (see Table 1), each of 223 bytes. An interleave depth of 5 is the maximum recommended by the CCSDS standard. This will allow correction of up to 80 sequencial bytes in a data packet. The RS encoder operates from a clock input CLK which must be driven at twice the input data rate. Internally CLK is divided to give a clock CLKS which runs at half the frequency. This signal is available as an output and is used to time data into the RS encoder. A high input on SMC is used to tell the RS encoder that data to be encoded is present on the MSG pin (see Figure 2). While SMC is high the data on MSG is buffered and appears on RSE_OUT as well as being clocked into the encoder. As soon as SMC goes low the checksum is clocked out of the encoder onto RSE_OUT. While SMC is high the RSE_OUT signal follows the input MSG. When SMC is low RSE_OUT is produced from the exclusive-OR of MSG and the checksum signal. For this reason MSG must be held low while the encoder outputs the checksum. A gap can be left between successive data packets by holding SMC and MSG low after the checksum has been sent. Alternatively, synchronisation code can be inserted before a data block by holding SMC low and placing the code on MSG. As soon as SMC goes high any further data on MSG is assumed to form part of a message and will be encoded accordingly. Note: External logic must guarantee the SMC is high for the correct period, ie only while 223 x I bytes (I = interleave depth) of data are clocked through. Otherwise when SMC falls an invalid checksum will be produced. SEL_A SEL_B Interleave SMC_OUT Period (Bytes) I = Depth SMC_OUT = 1 SMC_OUT = 0 0 0 5 5 x 223 5 x 32 0 1 4 4 x 223 4 x 32 1 0 1 1 x 223 1 x 32 1 1 5 5 x 223 5 x 32 I = Interleave depths of 1, 4 or 5 SYNC: If SMC is low and no checksum is being output any data on MSG will appear on RSE_OUT. This feature can be used to insert a synchronisation sequence before a data block. DATA: Data block 223 x I bytes in length. CHECKSUM: The checksum is 32 x I bytes long and appended to the data by the RS encoder. Figure 2: Reed-Solomon Encoder Operation Table 1: Interleave Length Defined by SEL_A and SEL_B

The convolution encoder generates 2 serial bits of output data for each bit it reads in. The coding operates cyclically over a length of 7 bits. It increases the bandwidth of the signal but establishes a correlation between succesive bits in the output signal. The convolution encoder operates continuously using CE_CLK to read data in on CE_IN and to write the encoded data to CE_OUT. If required the output of the Reed-Solomon encoder can be fed directly into the convolution encoder by connecting RSE_OUT to CE_ IN and CLKS to CE_CLK. TEST GENERATOR The MA1916 contains its own built-in test pattern generator, this can be connected to the RS encoder for in service testing. The test generator supplies test patterns and the SMC signal according to the inputs on T0-2 (see Table 2) and the interleave depth selected using SEL_A and SEL_B. Figure 3 shows the necessary connections for feeding test patterns through both the RS and the convolution encoder. Figure 3: Test Configuration Table 2: Test Pattern on MSG_OUT Defined by T0-2 PIN DESCRIPTION VDD and GND (Power and Ground) The MA1916 uses a single power supply of 5V ±10%. CLK (Clock) This input supplies a clock signal to the RS encoder and the Test generator. It requires a signal with a nominal 50% duty cycle running at twice the input data rate for the RS encoder. The rising edge of CLK is used to generate the internal CLKS signal which clocks data through the RS encoder. n_RST (Reset) This active low signal is a reset supplied to the RS encoder, the test generator and the convolution encoder. It should be noted that the reset does not clear the check sum in the RS encoder and a complete dummy data packet should be run through before valid data is sent. SEL_A and SEL_B (Interleave Depth Select) These inputs define the interleave depth of a message passing through the RS encoder They also specify the message length to be produced by the test generator (see Table 1). The inputs are connected to internal pulldown resistors. T 0-2 (Test Pattern Select) These inputs select the pattern to be produced by the test generator (see Table 2). Each input is connected to an internal pull-down resistor. T 3 (Production Test Input) This input is used for production testing only It has an internal pull-down resistor and should be left unconnected . MSG_OUT (Test Message Output) This output pin carries the test patterns defined by the inputs To-2 and produced by the test generator. This signal can be connected directly to MSG for testing purposes. Interleave Depth T2 T1 T0 Test I = 5 (1115 bytes) I = 4 (892 bytes) I = 1 (223 bytes)

000 N / A 0

0 0 1 1 (1, 2, 3, 4, 5) x 223 (1, 2, 3, 4) x 223 (1) x 223 0 1 0 2 (0) x 222 x 5, (0) x 4, (7B) (0) x 222 x 4, (0) x 3, (7B) (0) x 222, 7B 0 1 1 3 (0) x 222 x 5, (7B, AF, 99, FA, B7) (0) x 222 x4, (7B, AF, 99, FA) (0) x 222, 7B 1 0 0 4 (0) x 221 x 5, (7B) x 5, (47) x 5 (0) x 221 x 4, (7B) x 4, (47) x 4 (0) x 222, 7B Other N/A

DC CHARACTERISTICS AND RATINGS Parameter Min Max Units Supply Voltage -0.5 7 V Input Voltage -0.3 V DD +0.3 V Current Through Any Pin -20 +20 mA Operating Temperature -55 125 °C Storage Temperature -65 150 °C CE_CLK (Convolution Encoder Clock) The CE_CLK input drives the timing of the convolution encoder. Data is read in on CE_IN on the rising edge of CE_CLK and output on CE_OUT on both the rising and falling edge of CE_CLK. Note: The output data rate is twice the input data rate. A 50% duty cycle clock is required. If this is provided by the CLKS output, data can be read directly from RSE_OUT to the CE_IN input (see figure 3). CE_OUT (Convolution Encoder Output) This signal carries the output data from the convolution encoder. The data rate on CE_OUT is twice that of CE_IN. CLK_OUT (Clock Out) CLK_OUT is a buffered output of the CLK input signal. If CLKS is connected to CE_CLK to drive the convolution encoder, CE_OUT can be captured on the falling edge of CLK_OUT. Note: Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions, or at any other condition above those indicated in the operations section of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3: Absolute Maximum Ratings Symbol Parameter Conditions Min Typ Max Units VDD Supply Voltage - 4.5 5.0 5.5 V VIH CMOS Input High Voltage V DD = 5.5V 0.8 V DD -V DD V VIL CMOS Input Low Voltage V DD = 5.5V V SS - 0.2 V DD V VOH CMOS Output High Voltage V DD = 5V, IOH = -1.0mA V DD -0.5 - - V VOL CMOS Output Low Voltage V DD = 5V, IOL = 4.0mA - - 0.4 V IIL Input Leakage Current V DD = 5.5V, VIN = VSS or VDD -10 - 10 µA IPDL Input Pull-Down Current V DD = 5.5V, VIN = VSS or VDD -20 - 150 µA IDD1 Static Power Supply Current V DD = 5.5V - 0.1 2.5 mA IDD2 Dynamic Power Supply Current CLK = 10MHz, VDD = 5.5V - 3 10 mA Notes: 1. VDD = 5V±10%, over full operating temperature range. 2. Total dose radiation not exceeding 1x105 Rads(Si) 3. Mil-Std-883, method 5005, subgroups 1, 2, 3 Table 4: DC Electrical Characteristics AC CHARACTERISTICS No. Parameter Min. Max. Units

1 CLK hlgh to CLKS - 25 ns

2 CLK high to SYZ or SZY - 30 ns

3 SMC hold after CLK low 0 - ns

4 SMC setup to CLK low 30 - ns

5 MSG set up to CLKS high 10 - ns

6 MSG hold after CLKS high 10 - ns

7 MSG to RSE_OUT propagation delay - 30 ns

8 CLKS to RSE_OUT (SMC low) - 25 ns

9 CLK to CLK_OUT propagation delay - 25 ns

10 CE_IN setup to CE_CLK hlgh 10 - ns

11 CE_IN hold after CE_CLK high 10 - ns

12 CE_CLK to CE_OUT - 25 ns

13 CLK CYCLE TIME 100 - ns

Table 5: AC Electrical Characteristics Note: Mil-Std-883, method 5005, subgroups 9, 10, 11

Symbol Parameter Conditions Min. Typ. Max. Units C IN Input Capacitance V l = 0V - 3 5 pF C OUT Output Capacitance V I/O = 0V - 5 7 pF Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured. Table 6: Capacitance Symbol Parameter Conditions FT Functionality V DD = 4.5V - 5.5V, Frequency = 1MHz VIL = VSS , VIH = VDD , VOL = VOH = VDD /2 Temperature = -55°C to +125°C, Radiation to 1MRad Total Dose Mil-Std-883, method 5005, subgroups 7, 8A, 8B Table 7: Functionality Subgroup Definition

1 Static characteristics specified in Table 4 at +25°C

2 Static characteristics specified in Table 4 at +125°C

3 Static characteristics specified in Table 4 at -55°C

7 Functional characteristics specified in Table 7 at +25°C

8A Functional characteristics specified in Table 7 at +125°C 8B Functional characteristics specified in Table 7 at -55°C

9 Switching characteristics specified in Table 5 at +25°C

10 Switching characteristics specified in Table 5 at +125°C

11 Switching characteristics specified in Table 5 at -55°C

Table 8: Definition of Subgroups

Figure 8: 28-Lead Ceramic DIL (Solder Seal) - Package Style C OUTLINES AND PIN ASSIGNMENTS Ref Millimetres Inches A1 0.38 - 1.53 0.015 - 0.060 b 0.35 - 0.59 0.014 - 0.023 c 0.20 - 0.36 0.008 - 0.014 e1 - 15.24 Typ. - - 0.600 Typ. - H 4.71 - 5.38 0.185 - 0.212 XG404 D W A e b Z H A 1 15° M E C Seating Plane 114 2815 TOP VIEW

Figure 9: 28-Lead Ceramic Flatpack (Solder Seal) - Package Style F Ref Millimetres Inches b 0.38 - 0.48 0.015 - 0.019 c 0.10 - 0.18 0.004 - 0.007 D 18.08 - 18.49 0.712 - 0.728 L 7.62 - 9.91 0.300 - 0.390 M 12.50 - 12.09 0.492 - 0.508 XG530 M b e D L A Q c Pin 1 Z M E

Figure 10: Flatpack Pinout 1T 2 2T 1

3 CE_CLKS

4 CE_IN

5 CE_OUT

6 TEST_POINT

7 N/C

8 ST1

9 GND

10 SEL_A

11 STZ

12 SEL_B

13 SZY

14 n_RST 28MSG_OUT 27CLK_OUT 26SMC 25RSE_OUT 24SYZ 23T3 22CLKS 21VDD 20N/C 19T0 18MSG 17CLK 16READY 15SMC_OUT Bottom View RADIATION TOLERANCE Total Dose Radiation Testing For product procured to guaranteed total dose radiation levels, each wafer lot will be approved when all sample devices from each lot pass the total dose radiation test. The sample devices will be subjected to the total dose radiation level (Cobalt-60 Source), defined by the ordering code, and must continue to meet the electrical parameters specified in the data sheet. Electrical tests, pre and post irradiation, will be read and recorded. Dynex Semiconductor can provide radiation testing compliant with Mil-Std-883 test method 1019, Ionizing Radiation (Total Dose). Total Dose (Function to specification)* 1x105 Rad(Si) Transient Upset (Stored data loss) 5x10 10 Rad(Si)/sec Transient Upset (Survivability) >1x10 12 Rad(Si)/sec Neutron Hardness (Function to specification) >1x1015 n/cm2 Single Event Upset** <1x10 -10 Errors/bit day Latch Up Not possible * Other total dose radiation levels available on request ** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit Table 9: Radiation Hardness Parameters

S R Q H Radiation Hard Processing 100 kRads (Si) Guaranteed 300 kRads (Si) Guaranteed 1000 kRads (Si) Guaranteed Radiation Tolerance C F L Ceramic DIL (Solder Seal) Flatpack (Solder Seal) Leadless Chip Carrier Package Type QA/QCI Process (See Section 9 Part 4) Test Process (See Section 9 Part 3) Assembly Process (See Section 9 Part 2) L C D E B S Rel 0 Rel 1 Rel 2 Rel 3/4/5/STACK Class B Class S Reliability Level MAx1916xxxxx For details of reliability, QA/QC, test and assembly options, see ‘Manufacturing Capability and Quality Assurance Standards’ Section 9.

ORDERING INFORMATION

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