DIM1500ASM33-TL001 DYNEX | Alldatasheet

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Technical content

DS6103-1 June 2013 (LN30625) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com

FEATURES

 Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN Substrates

APPLICATIONS

 High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi -directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM 1500ASM33-TL001 is a Low V CE(sat) single switch 3300V, n -channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM1500ASM33-TL001 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 3300V VCE(sat) * (typ) 2.0V IC (max) 1500A IC(PK) (max) 3000A * Measured at the auxiliary terminals Fig. 1 Circuit configuration Outline type code: A (See Fig. 11 for further information) Fig. 2 Package 2(G) 1(E) 3(C) 5(C) 4(E) 8(E) 6(E) 7(C) 9(C)

2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be follow ed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 3300 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase = 115°C 1500 A IC(PK) Peak collector current 1ms, Tcase = 140°C 3000 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 15.6 kW I2t Diode I2t value VR = 0, tp = 10ms, Tj = 150ºC 720 kA2s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 10.2 kV QPD Partial discharge – per module IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance – transistor Continuous dissipation - junction to case - - 8 °C/kW Rth(j-c) Thermal resistance – diode Continuous dissipation - junction to case - - 16 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 6 °C/kW Tj Junction temperature Transistor - - 150 °C Diode - - 150 °C Tstg Storage temperature range - -40 - 125 °C Screw torque Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 5 mA VGE = 0V, VCE = VCES, Tcase = 125°C 90 mA VGE = 0V, VCE = VCES, Tcase = 150°C 150 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 1 μA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.7 V VCE(sat) † Collector-emitter saturation voltage VGE = 15V, IC = 1500A 2.0 V VGE = 15V, IC = 1500A, Tj = 125°C 2.6 V VGE = 15V, IC = 1500A, Tj = 150°C 2.8 V IF Diode forward current DC 1500 A IFM Diode maximum forward current tp = 1ms 3000 A VF † Diode forward voltage IF = 1500A 2.4 V IF = 1500A, Tj = 125°C 2.5 V IF = 1500A, Tj = 150°C 2.4 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 260 nF Qg Gate charge ±15V Including external Cge 25 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 6 nF LM Module inductance 10 nH RINT Internal transistor resistance 90 μ SCData Short circuit current, ISC Tj = 150°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9 5500 A Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM

4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.65 Rg(OFF) = 1.5 CGE = 330nF LS ~ 150nH 2700 ns tf Fall time 610 ns EOFF Turn-off energy loss 3750 mJ td(on) Turn-on delay time 960 ns tr Rise time 430 ns EON Turn-on energy loss 2400 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V dIF/dt = 4000A/μs 850 μC Irr Diode reverse recovery current 920 A Erec Diode reverse recovery energy 1000 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.65 Rg(OFF) = 1.5 CGE = 330nF LS ~ 150nH 2750 ns tf Fall time 590 ns EOFF Turn-off energy loss 4050 mJ td(on) Turn-on delay time 1000 ns tr Rise time 460 ns EON Turn-on energy loss 3100 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V dIF/dt = 4000A/μs 1400 μC Irr Diode reverse recovery current 1160 A Erec Diode reverse recovery energy 1700 mJ Tcase = 150°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.65 Rg(OFF) = 1.5 CGE = 330nF LS ~ 150nH 2760 ns tf Fall time 590 ns EOFF Turn-off energy loss 4400 mJ td(on) Turn-on delay time 940 ns tr Rise time 460 ns EON Turn-on energy loss 3400 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V dIF/dt = 4000A/μs 1600 μC Irr Diode reverse recovery current 1200 A Erec Diode reverse recovery energy 1950 mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 1700g Module Outline Type Code: A Fig. 11 Module outline drawing screwing depth max. 16 external connection external connection 3(C) 2(G) 1(E) 5(C) 7(C) 4(E) 6(E) 9(C) 8(E) 61.2±0.3 screwing depth max. 8 8 x 73 x M4 6 x M8 external connection external connection 3(C) 2(G) 1(E) 7(C) 9(C) 6(E) 8(E) 5(A) 4(C) 5 ±0.2 48 ±0.5 61.2±0.3 59.2 ±0.214 ±0.2 12 ±0.2 Ø 18 ±0.1 44 ±0.4 124 ±0.1 140 ±0.5 190 ±0.5 171±0.15 57±0.1 41 ±0.218 ±0.2 38±0.5

8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the produc t and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled docu ment and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature produ ct failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting i n fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status if it is not yet fully approved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for vo lume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product ha s been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 Tel: +44(0)1522 502753 / 502901 Web: http://www.dynexsemi.com Email: Power_solutions@dynexsemi.com  Dynex Semiconductor Ltd. 2013. Technical Documentation – Not for resale.