DIM400DDM12-A000 DYNEX | Alldatasheet

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DS5532-3.1 January 2009(LN26558) /c1/c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 /c1/c1/c1/c1 /c1/c1 /c1/c1 /c1/c1/c1 /c1/c1/c1 /c1/c1 1/8

FEATURES

/G1 10µs Short Circuit Withstand /G1 Non Punch Through Silicon /G1 Lead Free construction /G1 Isolated MMC Base with AlN Substrates /G1 High Thermal Cycling Capability

APPLICATIONS

/G1 High Reliability Inverters /G1 Motor Controllers /G1 Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-direction al switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM400DDM12-A000 is a dual switch 1200V, n- channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised f or traction drives and other applications requiring hi gh thermal cycling capability. The module incorporates an electrically isolated ba se plate and low inductance construction enabling circ uit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM400DDM12-A000 Note: When ordering, please use the complete part number KEY PARAMETERS V CES 1200V V CE(sat) * (typ) 2.2 V I C (max) 400A I C(PK) (max) 800A *(measured at the power busbars and not the auxiliary terminals) Fig. 1 Circuit configuration Outline type code: D (See Fig. 11 for further information) Fig. 2 Package

2/8: This device is sensitive to electrostatic dischar ge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of t he package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage V GE =0V 1200 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase =85 ° C 400 A IC(PK) Peak collector current 1ms, T case=115 ° C 800 A Pmax Max.transistor power dissipation Tcase =25 ° C, Tj =150 ° C 3470 kW I2t Diode I 2t value V R = 0V, tp =10ms, Tj = 125° C 25 KA 2s Visol Isolation voltage-per module Commoned terminals to base plate. AC RMS, 1 min,50Hz 2500 V QPD Partial discharge-per module IEC1287.V1 =1300V, V2 =1000V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index) 175 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance -transistor (per switch) Continuous dissipation - junction to case 36 ° C/kW Rth(j-c) Thermal resistance -diode (per switch) Continuous dissipation - junction to case 80 ° C/kW Rth(c-h) Thermal resistance -case to heatsink (per module) Mounting torque 5Nm (with mounting grease) 8 ° C/kW Tj Junction temperature Transistor 150 ° C Diode 125 ° C Tstg Storage temperature range 125 ° C Screw torque Mounting M6 5 Nm Electrical connections – M4 2 Nm Electrical connections – M8 10 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

T case = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE =0V,VCE =VCES 0.5 mA VGE =0V,VCE =VCES ,Tcase =125 ° C 12 mA IGES Gate leakage current VGE = ±/c1 20V,VCE =0V 2 uA VGE(TH) Gate threshold voltage IC =20mA,VGE =VCE 4.5 5.5 6.5 V VCE(sat) † Collector-emitter saturation voltage VGE =15V,IC =400A 2.2 2.8 V VGE =15V,IC =400A,Tcase =125 ° C 2.6 3.2 V IF Diode forward current DC 400 A IFM Diode maximum forward current tp =1ms 800 A VF † Diode forward voltage IF =400A 2.1 2.4 V IF =400A,Tcase =125 ° C 2.1 2.4 V Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 20 nF LM Module inductance -- 20 nH RINT Internal transistor resistance 0.27 µ/G1 2750 A SCData Short circuit current, I SC Tj = 125º C, VCC = 900V tp /G1/G2/G3/G4/G5/G6/G2Vge /G1/G2/G3/G7/G8 VCE(max) = VCES – L * x di/dt /G1/G2/G3/G4/G5/G6/G7/G8/G9/G10I2 2250 A Note: † Measured at the power busbars and not the auxiliary terminals *L is the circuit inductance + L M

4/8: This device is sensitive to electrostatic dischar ge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time I C =400A 710 ns tf Fall time V GE =±15V 70 ns EOFF Turn-off energy loss V CE =600V 60 mJ td(on) Turn-on delay time RG(ON) =RG(OFF)=3.3/G1 190 ns tr Rise time 100 ns Qg Gate charge L ~100nH 4 uC EON Turn-on energy loss 40 mJ Qrr Diode reverse recovery charge IF =400A,VCE =600V, 55 uC Irr Diode reverse recovery current dIF/dt =4700A/us 300 A Erec Diode reverse recovery energy 17 mJ Tcase = 125° C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time I C =400A 890 ns tf Fall time V GE =±15V 100 ns EOFF Turn-off energy loss V CE =600V 60 mJ td(on) Turn-on delay time RG(ON) =RG(OFF)=3.3/G1 440 ns tr Rise time 125 ns EON Turn-on energy loss L ~100nH 60 mJ Qrr Diode reverse recovery charge IF =400A,VCE =600V, 85 uC Irr Diode reverse recovery current dIF/dt =4000A/us 320 A Erec Diode reverse recovery energy 32 mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

6/8: This device is sensitive to electrostatic dischar ge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 1 0 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 4 x M8 screwing depth max 16 screwing depth max 8 6 x M4 6 x O7 7(C) 1(E) 3(C) 5(E)5(E) 6(G) 10(E) 2(C) 4(E) 12(C) 11(G) 130 ±0.5 114 ±0.1 57 ±0.25 57 ±0.25 124±0.25 140±0.5 30 ±0.2 16 ±0.2 18 ±0.2 44 ±0.2 57 ±0.253 ±0.2 40 ±0.2 5 ±0.2 29.2 ±0.5 5.25 ±0.3 35 ±0.211.5 ±0.2 14 ±0.2 55.2 ±0.3 11.85 ±0.2 +1.5 -0.0 28 ±0.5 20 ±0.1 Nominal weight: 1050g Module outline type code: D Figure 11 Outline drawing

8/8: This device is sensitive to electrostatic dischar ge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semic onductors. Data with respect to air natural, force d air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)15 22 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. Inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.