RD16HHF1

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MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION OUTLINE DRAWING note(3) ʶ ʶ :Copper of the ground work is exposed in case of frame separation. ʶ ."9 note: (1)Torelance of no designation means typical value. Dimension in mm. (3) (2) :Dipping area EFH ʶ PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) ʶ ʶ ʶ ʶ ʶ ʶ .*/ 1 2 ."9 ʶ .*/ .*/ RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

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High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. RoHS COMPLIANT RD16HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/- 20 V Pch Channel dissipation Tc=25°C 56.8 W Pin Input power Zg=Zl=50Ω 0.8 W ID Drain to source current - 5 A Tch Channel temperature - 150 °C Tstg Storage temperature - -40 to +150 °C Rth j-c Thermal resistance junction to case 2.2 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.7 - 4.7 V Pout Output power VDD=12.5V, Pin=0.4W, 16 19 - W ηD Drain efficiency f=30MHz, Idq=0.5A 55 65 - % Load VSWR tolerance VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Ta=+25°C f=1MHz Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 024 68 10 Vgs(V) Ids(A) Vds=10V Ta=+25°C Vds VS. Crss CHARACTERISTICS 01 0 20 30 Vds(V) Crss(pF) Vds VS. Coss CHARACTERISTICS 100 01 0 20 30 Vds(V) Coss(pF) Vds VS. Ciss CHARACTERISTICS 0 102 03 0 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Ta=+25°C f=1MHz Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 02468 10 Vds(V) Ids(A) Ta=+25°C Vgs=10V Vgs=8V Vgs=7V Vgs=5V Vgs=6V Vgs=9V

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin(W) Pout(W) Idd(A) 100 Бd(%) Po ηd Idd Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Pin-Po CHARACTERISTICS -10 0 10 20 30 Pin(dBm) Po(dBm) , Gp(dB),Idd(A) 100 Бd(%) Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Po ̞̳̳ Gp Vdd-Po CHARACTERISTICS 4 6 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=30MHz Pin=0.4W Idq=0.5A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 24 6 8 10 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=30MHz) RD 16HHF1 C2:470pF*2 in par allel C1:100pF,0.022uF,0.1uF in parallel Note:Board material-teflon substrate L5:5Turns,I.D5.6mm, D0.9mm, P=1mm c opper wire L4:4Turns,I.D5.6mm, D0.9mm, P=0.5mm c opper wire L3:9Turns,I.D5.6mm, D0.9mm c opp er wire L1:10Turns,I.D8mm,D0.9mm copper wire L2:10Turns,I.D6mm, D1.6mm s ilver plateted copp er wire RF-OUTRF-IN 10 0 20 0pF 10 0pF 1 oh m 22 0pF 20p F 82 pF 1K ohm 8.2K ohm 1.5 Di mensions:mm Vd dVg g 330 uF,50V micro strip line width=4.2mm/ 50 ohm,er:2.7,t=1.6mm 100 pF220p F 10uF,50V *3pcs 10 0pF 20 0pF 88 pF 10 0 68 pF

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=30MHz Zout Zo=50Њ f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD16HHF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC 10 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !