2SC2331 JMNIC | Alldatasheet
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Technical content
Product Specification www.jmnic.com Silicon Power Transistors 2SC2331
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1008
- Low collector saturation voltage
- Fast switching speed
APPLICATIONS
- Switching regulators
- DC/DC converters
- High frequency power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2.0 A ICM Collector current-Peak 4.0 A IB Base current 1.0 A PT Total power dissipation Ta=25℃ 1.5 W PT Total power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Base-emitter sustaining voltage I C=1.0A ,IB=0.1A,L=1mH 100 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage I C=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current V CB=100V; IE=0 10 μA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE-1 DC current gain I C=0.1A ; VCE=5V 40 hFE-2 DC current gain I C=1A ; VCE=5V 40 200 Switching times resistive load ton Turn-on time 0.5 μs ts Storage time 1.5 μs tf Fall time IC=1.0A IB1=- IB2=0.1A RL=50Ω;VCC≈50V 0.5 μs hFE-2 Classifications M L K 40-80 60-120 100-200
Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)