2SC4762 JMNIC | Alldatasheet
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Technical content
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762
DESCRIPTION
- With TO-3P(H)IS package
- High speed
- High voltage
- Low saturation voltage
- Bult-in damper type
APPLICATIONS
- Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current ±7 A ICM Collector current-Peak ±14 A IB Base current 3.5 A PC Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JM nic
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SC4762 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-base breakdown voltage I E=300mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=5A IB=1A 5 V VBEsat Base-emitter saturation voltage I C=5A IB=1A 1.5 V ICBO Collector cut-off current V CB=1500V; IE=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 83 250 mA hFE-1 DC current gain I C=1A ; VCE=5V 8 12 hFE-2 DC current gain I C=5A ; VCE=5V 5 9 Cob Collector output capacitance I E=0 ; VCB=10V,f=1MHz 170 pF VF Forward voltage(damper diode) I F=5A 1.25 1.8 V fT Transition frequency I E=0.1A ; VCE=10V 1 3 MHz Switching times (inductive load) ts Storage time 4.0 5.5 μs tf Fall time ICP=5A;IB1(end) =1A fH=31.5kHz 0.2 0.5 μs
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SC4762 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)