BFR93A

BFR93A_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14

1997 Oct 29

NPN 6 GHz wideband transistor

1997 Oct 29 2

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A

FEATURES

• High power gain
• Low noise figure
• Very low intermodulation distortion.

APPLICATIONS

• RF wideband amplifiers and oscillators.

DESCRIPTION

NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT23. page MSB003Top view Marking code: R2p. QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V IC collector current (DC) − 35 mA Ptot total power dissipation T s ≤ 95 °C − 300 mW C re feedback capacitance I C = 0; VCE = 5 V; f = 1 MHz 0.6 − pF fT transition frequency I C = 30 mA; VCE = 5 V; f = 500 MHz 6 − GHz G UM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C1 3 − dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C7 − dB F noise figure I C = 5 mA; VCE = 8 V; f = 1 GHz;Γs = Γopt; Tamb =2 5°C 1.9 − dB VO output voltage d im = −60 dB; IC = 30 mA; VCE =8V ; R L =7 5Ω ; Tamb =2 5°C; fp +fq − fr = 793.25 MHz 425 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 35 mA Ptot total power dissipation T s ≤ 95 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − +175 °C

1997 Oct 29 3

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and . 2. Measured on the same die in a SOT37 package (BFR91A). 3. dim = −60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V O at dim = −60 dB; fp = 795.25 MHz; Vq =V O −6 dB at fq = 803.25 MHz; Vr =V O −6 dB at fr = 805.25 MHz; measured at fp +fq − fr = 793.25 MHz. 4. IC = 30 mA; VCE = 8 V; RL =7 5Ω ; Tamb =2 5°C; Vp = 200 mV at fp = 250 MHz; Vq = 200 mV at fq = 560 MHz; measured at fp +fq = 810 MHz. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =5V −− 50 nA hFE DC current gain I C = 30 mA; VCE = 5 V 40 90 − C c collector capacitance I E =ie = 0; VCB =5V ; f=1M H z − 0.7 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 1.9 − pF C re feedback capacitance I C =ic = 0; VCE = 5 V; f = 1 MHz; Tamb =2 5°C − 0.6 − pF fT transition frequency I C = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz G UM maximum unilateral power gain (note 1) IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 13 − dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 7 − dB F noise figure (note 2) I C = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt; Tamb =2 5°C − 1.9 − dB IC = 5 mA; VCE = 8 V; f = 2 GHz; Γs = Γopt; Tamb =2 5°C − 3 − dB VO output voltage notes 2 and 3 − 425 − mV d2 second order intermodulation distortion notes 2 and 4 −− 50 − dB G UM 10 log S 21

1 S 11

–  1 S 22 –

1997 Oct 29 4

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. L 1=L 3=5 µH choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. handbook, full pagewidth MBB251 18 Ω 1.5 nF 10 kΩ L2 1 nF75 Ω input 270 Ω 1 nF 1.5 nF 1 nF 0.68 pF3.3 pF DUT 75 Ω output VCCVBB Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MBG246 150 Ptot (mW) Ts (o C) Fig.4 DC current gain as a function of collector current. VCE = 5 V; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 120 MCD087 hFE I (mA)C

1997 Oct 29 5

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.5 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 048 1 6 0.8 MBB252 0.6 0.4 0.2 C c (pF) V CB (V) Fig.6 Transition frequency as a function of collector current; typical values. VCE = 5 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 4 0 MCD089 I (mA)C (GHz) Tf Fig.7 Gain as a function of collector current; typical values. VCE = 8 V; f = 500 MHz. handbook, halfpage 10 20 40 IC (mA) gain (dB) MBB255 MSG G UM Fig.8 Gain as a function of collector current; typical values. VCE = 8 V; f = 1 GHz. handbook, halfpage 10 20 40 MBB256 gain (dB) I (mA)C MSG G UM

1997 Oct 29 6

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.9 Gain as a function of frequency; typical values. IC = 10 mA; VCE =8V . handbook, halfpage50 MBB257 102 103 104 gain (dB) f (MHz) MSG G UM G max Fig.10 Gain as a function of frequency; typical values. IC = 30 mA; VCE =8V . handbook, halfpage50 MBB258 102 103 104 gain (dB) f (MHz) MSG G UM G max Fig.11 Circles of constant noise figure; typical values. IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C. handbook, halfpage 02 0 4 0 8 0 MBB253 G (mS)S B S (mS) Fig.12 Circles of constant noise figure; typical values. IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C. handbook, halfpage 20 40 60 MBB254 G (mS)S B S (mS) 2.5 3.0 3.5 2.3 F = 4.0 dB

1997 Oct 29 7

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.13 Minimum noise figure as a function of collector current; typical values. VCE =8V . handbook, halfpage4 MCD094 101 F (dB) I (mA)C f = 2 GHz

500 MHz

1 GHz

Fig.14 Minimum noise figure as a function of frequency; typical values. VCE =8V . handbook, halfpage4 MCD095 F (dB) f (MHz) 5 mA 10 mA 10 410 310 2 I = 30 mAC Fig.15 Intermodulation distortion; typical values. VCE = 8 V; VO = 425 mV (52.6 dBmV); fp +fq−fr = 793.25 MHz; Tamb =2 5°C. Measured in MATV test circuit (see Fig.2) handbook, halfpage MBB263 (dB) 01 0 2 0 4 0 I (mA)C d im Fig.16 Second order intermodulation distortion; typical values. VCE = 8 V; VO = 200 mV (46 dBmV); fp +fq−fr = 810 MHz; Tamb =2 5°C. Measured in MATV test circuit (see Fig.2) handbook, halfpage 01 0 2 0 4 0 MBB264 I (mA)C d 2 (dB)

1997 Oct 29 8

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.17 Common emitter input reflection coefficient (S11). IC = 30 mA; VCE = 8 V; Zo =5 0Ω ; Tamb =2 5°C. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MBB259 500 200

100 MHz

10.2 10 52 0.5 1200 800 1000 Fig.18 Common emitter forward transmission coefficient (S21). IC = 30 mA; VCE = 8 V; Tamb =2 5°C. handbook, full pagewidth MBB261 ϕ ϕ 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o 100 10 20 30 200 500 8001000

1200 MHz

1997 Oct 29 9

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A Fig.19 Common emitter reverse transmission coefficient (S12). IC = 30 mA; VCE = 8 V; Tamb =2 5°C. handbook, full pagewidth MBB262 ϕ ϕ 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o 200 1200 0.05 0.1 0.15 Fig.20 Common emitter output reflection coefficient (S22). IC = 30 mA; VCE = 8 V; Zo =5 0Ω ; Tamb =2 5°C. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MBB260 10.2 10 520.5 1200 8001000 500 200

1997 Oct 29 10

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

1997 Oct 29 11

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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