BFR93AW

BFR93AW_15 JMNIC | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14

1995 Sep 18

NPN 5 GHz wideband transistor

1995 Sep 18 2

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW

FEATURES

• High power gain
• Gold metallization ensures excellent reliability
• SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Marking code: R2. Fig.1 SOT323 handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 15 V VCEO collector-emitter voltage open base −− 12 V IC collector current (DC) −− 35 mA Ptot total power dissipation up to Ts =9 3°C; note 1 −− 300 mW hFE DC current gain I C = 30 mA; VCE =5V 4 0 9 0 − C re feedback capacitance I C = 0; VCE = 5 V; f = 1 MHz; Tamb =2 5°C − 0.6 − pF fT transition frequency I C = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz G UM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 13 − dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − dB F noise figure I C = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − 1.5 − dB Tj junction temperature −− 150 °C

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 35 mA Ptot total power dissipation up to T s =9 3°C; see Fig.2; note 1− 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Fig.2 Power derating curve. 0 50 100 200 200 MLB540 150 T ( C)os P tot (mW) 300 400 100 THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITION VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =9 3°C; note 1 190 K/W

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW CHARACTERISTICS Tj=2 5°C (unless otherwise specified). Note 1. G UM is the maximum unilateral power gain, assuming s12 is zero and SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB =5V −− 50 nA hFE DC current gain I C = 30 mA; VCE = 5 V 40 90 − C c collector capacitance I E =ie = 0; VCB = 5 V; f = 1 MHz− 0.7 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 2.3 − pF C re feedback capacitance I C = 0; VCE = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency I C = 30 mA; VCE =5V ; f = 500 MHz 45 − GHz G UM maximum unilateral power gain; note 1 IC = 30 mA; VCE =8V ; f = 1 GHz; Tamb =2 5°C − 13 − dB IC = 30 mA; VCE =8V ; f = 2 GHz; Tamb =2 5°C − 8 − dB F noise figure I C = 5 mA; VCE =8V ; f = 1 GHz;Γs = Γopt − 1.5 − dB IC = 5 mA; VCE =8V ; f = 2 GHz;Γs = Γopt − 2.1 − dB G UM 10 s21 1s 11 2–() 1s 22

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.3 DC current gain as a function of collector current; typical values. VCE =5V . handbook, halfpage 01 0 2 0 3 0 120 MCD087 hFE I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. MBG203 C re (pF) 0.8 0.6 0.4 0.2 12 16 VCB (V) Fig.5 Transition frequency as a function of collector current; typical values. VCE = 5 V; f = 500 MHz; Tamb =2 5°C. MBG204 10 2101 fT (GHz) IC (mA)

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.6 Gain as a function of collector current; typical values. VCE = 8 V; f = 500 MHz. 10 20 MBG202 G UM MSG IC (mA) gain (dB) Fig.7 Gain as a function of collector current; typical values. VCE = 8 V; f = 1 GHz. 10 20 MBG201 MSG G UM gain (dB) IC (mA) Fig.8 Gain as a function of frequency; typical values. VCE = 8 V; IC = 10 mA. handbook, halfpage50 MBG200 102 103 104 f (MHz) G UM G max MSG gain (dB) Fig.9 Gain as a function of frequency; typical values. VCE = 8 V; IC =3 0m A . handbook, halfpage50 MGB207 102 103 104 f (MHz) G UM G max MSG gain (dB)

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =8V . handbook, halfpage MGC901 101

1 GHz

500 MHz

f = 2 GHz F (dB) IC (mA) Fig.11 Minimum noise figure as a function of collector current; typical values. VCE =8V . handbook, halfpage MGC900 f (MHz) 10 410 310 2 IC = 30 mA 10 mA 5 mA F (dB) Fig.12 Common emitter noise figure circles; typical values. f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo =5 0Ω. handbook, full pagewidth MGC879 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 0.2 0.5 F = 4 dB F = 3 dB F = 2 dB optΓ F = 1.4 dBmin 0.2 1 5 o180 0.2 0.5

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.13 Common emitter noise figure circles; typical values. f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo =5 0Ω. handbook, full pagewidth MGC880 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 21 5 180o 0.5 0.50.2 0.2 F = 2.5 dB F = 3 dB F = 4 dB 0.2 optΓ F = 2 dBmin G = 13 dB msΓ G = 13.8 dBmax G = 12 dB G = 11 dB f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo =5 0Ω. Fig.14 Common emitter noise figure circles; typical values. handbook, full pagewidth MGC881 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 21 5 180o 0.5 0.2 0.2 (4) (3) (2) (5) (6) (7) (8) (1) 0.2 0.5 (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γ ms ;G max = 8.1 dB. (6) G = 7 dB. (7) G = 6 dB. (8) G = 5 dB.

1995 Sep 18 9

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.15 Common emitter input reflection coefficient (s11); typical values. VCE = 8 V; IC = 30 mA; Zo =5 0Ω . handbook, full pagewidth MGC878 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 0.2 0.5 0.2 o180 0.2 1 0.5

40 MHz

3 GHz

VCE = 8 V; IC = 30 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. handbook, full pagewidth MGC898 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o

40 MHz 3 GHz

1995 Sep 18 10

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Fig.17 Common emitter reverse transmission coefficient (s12); typical values. VCE = 8 V; IC = 30 mA. handbook, full pagewidth MGC899 0 o 90o 135o 180 o 90o 45o 135o 45o VCE = 8 V; IC = 30 mA; Zo =5 0Ω . Fig.18 Common emitter output reflection coefficient (s22); typical values. handbook, full pagewidth MGC877 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2 0.2 1 5

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW PACKAGE OUTLINE Dimensions in mm. Fig.19 SOT323. handbook, full pagewidth 0.25 0.10 B0.2 0.2 A A M M 0.65 1.3 2.2 1.8 0.40 0.30 B1.35 1.15 2.2 2.0 detail X X 1.1 max0.1 0.0 1.0 0.8 0.3 0.1 0.2 MBC871

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Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.