RD15HVF1

RD15HVF1_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING note(3) ʶ ʶ :Copper of the ground work is exposed in case of frame separation. ʶ ."9 note: (1)Torelance of no designation means typical value. Dimension in mm. (3) (2) :Dipping area EFH ʶ PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) ʶ ʶ ʶ ʶ ʶ ʶ .*/ 1 2 ."9 ʶ .*/ .*/

DESCRIPTION

RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.

FEATURES

High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD15HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 48 W Pin Input power Zg=Zl=50Ω 1.5(Note2) W ID Drain current - 4 A Tch Channel temperature - 150 °C Tstg Storage temperature - -40 to +150 °C Rth j-c Thermal resistance junction to case 2.6 °C/W Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 100 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.5 2.0 2.5 V Pout1 Output power VDD=12.5V, Pin=0.6W, 15 18 - W ηD1 Drain efficiency f=175MHz,Idq=0.5A 55 60 - % Pout2 Output power VDD=12.5V, Pin=3W, 15 18 - W ηD2 Drain efficiency f=520MHz,Idq=0.5A 50 55 - % Load VSWR tolerance VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Load VSWR tolerance VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds-Ids CHARACTERISTICS 02 46 8 10 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V Vgs=10V Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 02 46 8 10 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vdd-Po CHARACTERISTICS 4 6 8 101 21 4 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm Pin-Po CHARACTERISTICS 01 2 3 4 5 6 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=12.5V Idq=0.5A Vdd-Po CHARACTERISTICS 46 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm Pin-Po CHARACTERISTICS 0.0 0.5 1.0 1.5 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A Pin-Po CHARACTERISTICS 01 0 20 30 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A Po ̞̳̳ Gp Pin-Po CHARACTERISTICS 0 10 203 04 0 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=520MHz Vdd=12.5V Idq=0.5A Po ̞̳̳ Gp

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 024 68 10 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C TEST CIRCUIT(f=175MHz) L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 25pF 25pF 92 95 56pF 25pF 25pF 25pF25pF10pF 8.2kOHM 100 micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Note:Board material-Teflon substrateC1:2200pF 10uF in parallel RF-OUT L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 100OHM Vgg Vdd RF-IN 56pF Dimensions:mm 25pF 82pF 100 9.1kOHM C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 175MHz RD15HVF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=520MHz) RD15HVF1 520MHz L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire C3:2200pF,330uF in parallel C2:2200pF*2 in parallel 100 56pF Dimensions:mm 56pF RF-IN VddVgg 100OHM L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RF-OUT C1:2200pF 10uF in parallel Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm 100 8.2kOHM 5pF 15pF10pF 12pF L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 9.1kOHM

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=175MHz Zout f=175MHz Zin Zo=50ohm Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Pow er Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !