RD02MUS1B_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING 0.2+/-0.05 0.2+/-0.05 0.9+/-0.1 INDEX MARK (Gate) 6.0+/-0.15 4.9+/-0.15 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1.0+/-0.05 (0.25) 3.5+/-0.05 2.0+/-0.05 (0.25) (0.22) (0.22)

DESCRIPTION

R D 0 2 M U S 1 B i s a M O S F E T t y p e t r a n s i s t o r specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.

FEATURES

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. çççç çççç çççç RoHS COMPLIANT RD02MUS1B-101,T112ç is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25 °C 21.9 W Pin Input Power Zg=Zl=50 Ω 0.1 W ID Drain Current - 1.5 A Tch Junction temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 5.7 °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Drain cutoff current V DS=17V, VGS=0V - - 100 uA IGSS Gate cutoff current V GS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage V DS=12V, IDS=1mA 1 1.8 3 V Pout1 Output power 2 3 - W ηD1 Drain efficiency VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA 55 65 - % Pout2 Output power 2 3 - W ηD2 Drain efficiency VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA 50 65 - % Load VSWR tolerance VDD=9.2V,Po=2W(Pin Control) f=175MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Load VSWR tolerance VDD=9.2V,Po=2W(Pin Control) f=520MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) On PCB(*1) On PCB(*1) with Heat-sink *1:The material of the PCB Glass epoxy (t=0.6 mm) Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 Vgs(V) Ids(A),GM(S) Ta=+25°C Vds=7.2V Ids GM Vds-Ids CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V Vgs=10V

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz - 1 0- 5 0 5 1 01 52 0 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA Po ηｄ Gp Pin-Po CHARACTERISTICS @f=175MHz 0.0 1.0 2.0 3.0 4.0 0 2 04 06 08 0 1 0 0 Pin(mW) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=7.2V Idq=200mA Pin-Po CHARACTERISTICS @f=520MHz -10 -5 0 5 10 15 20 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA Po ηｄ Gp Pin-Po CHARACTERISTICS @f=520MHz 0.0 1.0 2.0 3.0 4.0 0 2 04 06 08 0 1 0 0 Pin(mW) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=200mA Vdd-Po CHARACTERISTICS @f=175MHz 3579 1 1 1 3 Vdd(V) Po(W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Idd(A) Po Idd Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Vdd-Po CHARACTERISTICS @f=520MHz 3579 1 1 1 3 Vdd(V) Po(W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Idd(A) Po Idd Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=175MHz) TEST CIRCUIT(f=520MHz) 5mm Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm Note:Board material-Teflon substrate C1,C2:1000 pF,0.0022uF in parallel 12mm 68OHM 19mm RF-OUT C1 10uF,50V 33mm 12mm 3mm 13.5mm L1: Enameled wire 5Turns,D:0.43mm,2.46mmO.D 240pF 4.7kOHM 15mm Vgg Vdd 62pF RF-IN 62pF 3mm 39pF 43pF 3mm RD02MVS1 11.5mm 10pF 10pF L2: Enameled wire 3Turns,D:0.43mm,2.46mmO.D L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D 175MHz 6.5mm 5mm 5mm RD02MUS1B Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8m m Note:Board material-Teflon substrate C1,C2:1000pF,0.022uF in parallel 40.5mm 68OHM 19mm RF-OUT C1 10uF,50V 20mm 2mm 10mm 11mm 4.5mm L1: Enameled wire 9Turns,D:0.43mm,2.46mmO.D 240pF 4.7kOHM 19mm Vgg Vdd 62pFRF-IN 62pF 26.5mm 43pF6pF 18pF 3mm RD02MUS1 520MHz B

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* 175MHz Zout* 175MHz Zin* Zout* Z o = 5 0 ΩΩΩΩ Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* Zout* Z o = 5 0 ΩΩΩΩ Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* 520MHz Zout* output impedance output impedance

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !