RD02MUS1_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING 0.2+/-0.05 0.2+/-0.05 0.9+/-0.1 INDEX MARK (Gate) 6.0+/-0.15 4.9+/-0.15 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1.0+/-0.05 (0.25) 3.5+/-0.05 2.0+/-0.05 (0.25) (0.22) (0.22)

DESCRIPTION

RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

FEATURES

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT RD02MUS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 21.9 W Pin Input Power Zg=Zl=50Ω 0.1 W ID Drain Current - 1.5 A Tch Junction temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resisitance Junction to case 5.7 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate Voltage drain current VDS=17V, VGS=0V - - 100 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V Pout1 Output power VDD=7.2V, Pin=50mW, 2 3 - W ηD1 Drain efficiency f=175MHz Idq=200mA 55 65 - % Pout2 Output power VDD=7.2V, Pin=50mW, 2 3 - W ηD2 Drain efficiency f=520MHz Idq=200mA 50 65 - % Load VSWR tolerance VDD=9.2V,Po=2W(PinControl) f=175MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Load VSWR tolerance VDD=9.2V,Po=2W(PinControl) f=520MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) On PCB(*1) On PCB(*1) with Heat-sink *1:The material of the PCB Glass epoxy (t=0.6 mm) Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01 2 345 Vgs(V) Ids(A),GM(S) Ta=+25°C Vds=7.2V Ids GM Vds-Ids CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 02 4 6 8 10 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz -10 -5 0 5 10 15 20 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 Бd(%) Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA Po η̳Gp Pin-Po CHARACTERISTICS @f=175MHz 0.0 1.0 2.0 3.0 4.0 0 204 0 608 0 100 Pin(mW) Pout(W) , Idd(A) 100 Бd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=7.2V Idq=200mA Pin-Po CHARACTERISTICS @f=520MHz -10 -5 0 5 10 15 20 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 Бd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA Po Gp Pin-Po CHARACTERISTICS @f=520MHz 0.0 1.0 2.0 3.0 4.0 0 204 0 608 0 100 Pin(mW) Pout(W) , Idd(A) 100 Бd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=200mA Vdd-Po CHARACTERISTICS @f=175MHz 24 68 10 12 Vdd(V) Po(W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Idd(A) Po Idd Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Vdd-Po CHARACTERISTICS @f=520MHz 24 68 10 12 Vdd(V) Po(W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Idd(A) Po Idd Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 23 456 Vgs(V) Ids(A),GM(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=175MHz) 5m m Micro strip line width=2.2m m/50OHM,er:2.7,t=0.8m m Note:Board material-Teflon substrate C1,C2:1000 pF,0.00 22uF in parallel 12 mm 68O HM 19 mm RF- OUT C1 10 uF,50V 33m m 12m m 3m m 13. 5m m L1: En ameled w ire 5Turns,D:0.43m m,2.46m mO.D 240 pF 4.7kOHM 15 mm Vgg Vdd 62 pF RF- IN 62 pF 3m m 39p F 43pF 3m m RD0 2MVS1 11 .5mm 10p F 10pF L2: Enameled wire 3Turns,D:0.43mm,2.46mmO.D L3: En ameled w ire 9Turns,D:0.43m m,2.46 mmO.D

175 MHz

6.5m m 5m m 5m m TEST CIRCUIT(f=520MHz) Micro st rip line width=2.2m m/50 OHM,er:2.7,t=0.8mm Note:Board material-Teflon substrate C1,C2:1000 pF, 0.022u F in parallel 40 .5mm 68O HM 19 mm RF -OUT C1 10u F,50V 20m m 2m m 10 mm 11m m 4.5m m L1 : Enameled w ire 9T urns,D:0.43m m,2.46m mO.D 24 0pF 4.7kOHM 19m m Vg g Vdd 62p FRF- IN 62p F 26. 5m m 43 pF6p F 18pF 3m m RD02M US1 52 0MHz

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Po wer Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* 175MHz Zout* 175MHz Zin* Zout* Z o=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* Zout* Z o=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* 520MHz Zout*

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Pow er Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD02MSU1 S-PARAMETER DATA (@Vdd=7.5V, Id=200mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22 RD02MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=200mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 RoHS Compliance,Silicon MOSFET Pow er Transistor 175MHz,520MHz,2W RD02MUS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !