RD01MUS2

RD01MUS2_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING LOT No. 0.4+/-0.07 12 3

0.8 MIN

1.5+/-0.1

0.1 MAX

1.5+/-0.1 2.5+/-0.1 TYPE NAME 1.6+/-0.1 П 4.4+/-0.1 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4 3.9+/-0.3 1.5+/-0.1

DESCRIPTION

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.

FEATURES

• High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
• High Efficiency: 65%typ.
• Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD01MUS2-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V -5/+10 V Pch Channel dissipation Tc=25°C 3.6 W Pin Input Power Zg=Zl=50Ω 60 mW ID Drain Current - 600 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 34.5 °C/W SCHEMATIC DRAWING Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 50 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V Pout Output power VDD=7.2V, Pin=30mW 0.8 1.4 - W ηd Drain efficiency f=520MHz,Idq=100mA 50 65 - % Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) On PCB(*1) On PCB(*1) with Heat-sink *1:The material of the PCB Glass epoxy (t=0.6 mm) Vds-Ids CHARACTERISTICS 0.5 1.5 2.5 02 4 6 8 10 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V Vgs=10V Vgs-Ids CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 01 23 45 Vgs(V) Ids(A) Ta=+25°C Vds=10V Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vdd-Po CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 46 8 10 12 14 Vdd(V) Po(W) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Idd(A) Po Idd Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm Pin-Po CHARACTERISTICS -10 0 10 20 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) ηd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA Po Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 02 0 40 60 Pin(mW) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=100mA Vgs-Ids CHARACTORISTICS 2 23 4 5 6 Vgs(V) Ids(A),GM(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=520MHz) 4m m 4m m 5m m 68pF Micro strip line w idth=1.0m m/50O HM,er:4.8,t=0.6mm Note:Board material-glass epox i subs trate C1 ,C2: 1000 pF,0.022 uF in parallel L1 25. 5m m

68 OHM

C1 10u F,50V 3m m 13 mm 4m m 6.5m m 17. 5m m L1: Enameled wire 5Tu rns,D:0.43m m,2.46 mmO.D 240p F 4.7kOHM 11m m Vg g Vdd 62pFRF -IN 62pF 30 mm 24pF 3pF 10 pF 5.5m m RD01MUS1RD01MUS2 INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* 520MHz Zout*

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22 RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,1W RD01MUS2 MITSUBISHI ELECTRIC 17 Jan. 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !