RD00HVS1_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING LOT No. 0.4+/-0.07 12 3

0.8 MIN

1.5+/-0.1

0.1 MAX

1.5+/-0.1 2.5+/-0.1 TYPE NAME 1.6+/-0.1 П 4.4+/-0.1 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4 3.9+/-0.3 1.5+/-0.1

DESCRIPTION

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

FEATURES

Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD00HVS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-10 V Pch Channel dissipation Tc=25°C 3.1 W Pin Input Power Zg=Zl=50Ω 20 mW ID Drain Current - 200 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 40 °C/W Note : Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25deg.C , UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V Pout Output power VDD=12.5V, Pin=5mW, 0.5 0.8 - W ηD Drain efficiency f=175MHz,Idq=50mA 50 60 - % Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) On PCB(*1) On PCB(*1) with Heat-sink *1:The material of the PCB Glass epoxy (t=0.6 mm) Vds-Ids CHARACTERISTICS 0.5 1.5 02468 10 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V Vgs=10V Vgs-Ids CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 012345 Vgs(V) Ids(A) Ta=+25°C Vds=10V Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS -15 -10 -5 0 5 10 15 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 Бd(%) Ta=+25°C f=175MHz Vdd=12.5V Idq=50mA Po Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 Pin(mW) Pout(W) , Idd(A) 100 120 Бd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=12.5V Idq=50mA Vdd-Po CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 1.4 46 8 10 12 14 Vdd(V) Po(W) 120 160 200 240 280 Idd(mA) Po Idd Ta=25°C f=175MHz Pin=5mW Idq=50mA Zg=ZI=50 ohm Pin-Po CHARACTERISTICS -15 -10 -5 0 5 10 15 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 Бd(%) Ta=+25°C f=520MHz Vdd=12.5V Idq=50mA Po Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 Pin(mW) Pout(W) , Idd(A) 100 120 140 Бd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=12.5V Idq=50mA Vdd-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4 6 8 10 12 14 Vdd(V) Po(W) 120 160 200 240 280 320 Idd(mA) Po Idd Ta=25°C f=520MHz Pin=15mW Idq=50mA Zg=ZI=50 ohm

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=175MHz) Micro st rip line w idth=1.0m m/50 OHM,er:4.8,t=0.6mm Note:Board material-glass epox i substrate L4: Enameled wire 7Turns,D:0.43mm,2.46mmO.D L2 :LQG11A6 8N(68nH,murata) L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D 20 .5mm

270 OHM

  1. 0mm RF -out C1 C2 10uF,50V 10. 5m m 4.5mm 4m m 4m m 6.5mm 15 mm L1: Enameled wire 4Turns,D:0.43mm,2.46mmO.D 240pF 4.7kOHM 18. 0mm Vg g Vd d 250pFRF-in 180 pF 2m m 18pF10pF 3p F 4m m 5m m 4.0mm RD00H VS1 C1,C2:1000pF,0.022uF in parallel 19. 5mm 18p F TEST CIRCUIT(f=520MHz) NN 3%)74 NN 3'JO Q' 7EE7HH NN L0). NN 3'PVU NN 8-JOFXJEUI NN $Q' V'JOQBSBMMFM/PUF#PBSENBUFSJBM(MBTTFQPYZDPQQFSDMBEMBNJOBUFT'3 .JDSPTUSJQMJOFXJEUI NN 0). FS U NN .)[ NN NN NN O)O) NN Q' Q' NN NN Q' Q' NN

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22 RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 175MHz,0.5W RD00HVS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !