RD00HHS1_15 JMNIC | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING LOT No. 0.4+/-0.07 12 3 0.4+/-0.07

0.8 MIN

0.5+/-0.07 1.5+/-0.1

0.1 MAX

1.5+/-0.1 2.5+/-0.1 TYPE NAME 1.6+/-0.1 0.1 4.4+/-0.1 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4 1.5+/-0.1 3.9+/-0.3

DESCRIPTION

RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

FEATURES

Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V ±10 V Pch Channel dissipation Tc=25°C 3.1 W Pin Input power Zg=Zl=50Ω 10 mW ID Drain current - 200 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 40 °C/W Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V Pout Output power VDD=12.5V, Pin=4mW, 0.3 0.7 - W ηD Drain efficiency f=30MHz,Idq=50mA 55 65 - % Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) On PCB(*1) On PCB(*1) with Heat-sink *1:The material of the PCB Glass epoxy (t=0.6 mm) Vgs-Ids CHARACTERISTICS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012 345 Vgs(V) Ids(A) Ta=+25°C Vds=10V Vds-Ids CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 024 68 10 Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=4V Vgs=3V Vgs=10V Vds VS. Ciss CHARACTERISTICS 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS -20 -15 -10 -5 0 5 10 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 Бd(%) Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA Po Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 024 6 8 10 Pin(mW) Pout(W) , Idd(A) 100 Бd(%) Po ηd Idd Ta=25°C f=30MHz Vdd=12.5V Idq=50mA Vdd-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 24 68 10 12 14 Vdd(V) Po(W) 120 Idd(mA) Po Idd Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01 2 345 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Vgs-gm CHARACTORISTICS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012 345 Vgs(V) gm(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=30MHz) 82pF L4: LA L04N A1R0(1uH ) L3: LA L04NAR39(0.39uH) L2: LA L04NAR39(0.39uH) 22m m 330uF ,50V 40pF 8m m4m m 7.5m m 15O HM 2.5m m7m m 10uF ,50V 10pF40pF 9m m 13m m 9mm 180pF Micro s trip li ne w idth= 1.0m m/50O HM,er:4.8,t=0.6m m Note:Board m aterial-glass ep ox i subs trate C1,C2:100pF ,0.022uF ,0.1uF in parallel RF-OUT 1k OHM 7m m 14m m L1: LA L04N AR27(0.27m H) Vg g Vd d 470pF RF-IN 470pF 3m m 15pF 220pF 6m m RD0 0HHS 1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S22S12S21S11

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Pow er Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !