PT60QHX45 DYNEX | Alldatasheet

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APPLICATIONS

FEATURES

IT(AV) 1000A ITSM 22500A dI/dt 10,000A/ µs Outline type code: H. See Package Details for further information. PT60QHx45 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM , VRRM tp = 10ms Lower voltage grades available. Type Number Repetitive Peak Voltages VDRM /VRRM V CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value Units Max. Half wave resistive load, Tcase = 80oC 1000 A Tcase = 80oC 1570 A Fig.1 Package outline PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000

Clamping force 19.5kN with mounting compound Thermal resistance - case to heatsinkR th(c-h) 0.003Double side - oC/W SURGE RATINGS Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. UnitsSymbol Parameter ITSM Surge (non-repetitive) on-state current I2tI 2t for fusing ITSM Surge (non-repetitive) on-state current I2t I2t for fusing 2.52 x 106 A2s 22.5 kA 15.8 x 106 A2s 17.8 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units 125 oC Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Thermal resistance - junction to caseR th(j-c) Symbol Parameter Clamping force 18 22 kN –55 125 oC On-state (conducting) - 135 oC Double side cooled - 0.013 oC/W DYNAMIC CHARACTERISTICS ParameterSymbol Conditions Typ. Max. Units IRRM /IDRM Peak reverse and off-state current At V RRM /VDRM , Tcase = 125oC From 67% VDRM to 40kA Gate source 60A t r = 1.5µs to 1A, Tj = 25oC dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Rgk ≤ 1.5Ω - 100 mA - 175 V/ µs Non-repetitive - 10000 A/ µsRate of rise of on-state currentdI/dt VT(TO) Threshold voltage At T vj = 125oC rT On-state slope resistance At T vj = 125oC 1.5-V - 0.67 m Ω GATE TRIGGER CHARACTERISTICS AND RATINGS VDRM = 5V, Tcase = 25oC ConditionsParameterSymbol VGT Gate trigger voltage V DRM = 5V, Tcase = 25oC IGT Gate trigger current 1.0 V Max. Units Typ.

Fig.2 Maximum (limit) on-state characteristics

ORDERING INFORMATION

P Package outline type code x lead length (see table, right)

45 Voltage x100

Lead length (x) O C D E F G H J K L No lead 10" 12" 16" 18" 20" 24" 30" 40" 200mm 250mm 300mm 400mm 450mm 500mm 600mm 750mm 1000mm Instantaneous on-state voltage, VT - (V) 1000 2000 3000 4000 5000 Measured under pulse conditions Instantaneous on-state current, IT - (A) 1: Tj = 25˚C Max 2: Tj = 125˚C Max

1010.10.010.001 Time - (s) 0.1 0.01 0.001

0.0001 Thermal impedance - (˚C/W) Conduction

d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0130 0.0141 0.0170 0.0200 Double side cooled 100 Fig.3 Maximum (limit) transient thermal impedance - junction to case

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 – 0.05 x 2.0 – 0.1 deep (One in each electrode) 26 – 0.5 9.6 15˚ Cathode Aux. Tube Gate Tube Cathode Anode Ø62.85 Ø100 Ø62.85 Nominal weight: 820g Clamping force: 20kN –10% Package outine type code: H

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.