PHP50N03T VBSEMI | Alldatasheet
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Technical content
N-Channel 30 V (D-S) MOSFET
FEATURES
- TrenchFET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested Notes a. Package limit ed. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise note PARAMETER SYMBOL LIMIT UNIT Drain-Source Vo ltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID A TC = 125 °C 50 Continuous Source Current (Diode Conduction) a IS 70 Pulsed Drain Current b IDM 250 Single Pulse Avalanche Curr ent L = 0.1 mH IAS 33 Single Pulse Avalanche Ene rgy EAS 54 mJ Maximum Power Dissipat ion b TC = 25 °C PD W TC = 125 °C 23 Operating Junction and Storage Tem perature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 2.1 TO-263 SDG Top View T O-220AB Top View GDS E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
a. Pulse test; pulse w idth 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise note PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Bre akdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V Gate-Source Threshold Volta ge VGS(th) VDS = VGS, ID = 250 μA 1.0 2.5 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Vol tage Drain Current IDSS VGS = 0 V VDS = 30 V - - 1 μA VGS = 0 V V DS = 30 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 30 V, TJ = 175 °C - - 150 On-State Drain Curr ent a ID(on) V GS = 10 V VDS 5 V 70 - - A Drain-Source On-State Resistance a R DS(on) VGS = 10 V ID = 20 A - 0.007 - VGS = 10 V I D = 20 A, TJ = 125 °C - 0.010 - VGS = 10 V I D = 20 A, TJ = 175 °C - 0.014 VGS = 4.5 V ID = 15 A - 0.010 Forward Transconductance b gfs VDS = 15 V, ID = 15 A - 100 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 1850 2200 pF Output Capacitance Coss Reverse Transfer Capaci tance Crss Total Gate Charge c Qg VGS = 10 V V DS = 20 V, ID = 50 A -4 6 7 5 nC Gate-Source Charge c Qgs -1 0- Gate-Drain Charge c Qgd -8 - Gate Resistance Rg f = 1 MHz 1.3 2.8 4 . 5 Turn-On Delay Time c td(on) VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 -9 1 5 nsRise Time c tr -1 9 3 0 Turn-Off Delay Ti me c td(off) -2 6 4 0 Fall Time c tf -1 0 1 5 Source-Drain Diode Ratings and Ch aracteristics b Pulsed Current a ISM -- 2 0 0 A Forward Voltag e VSD IF = 30 A, VGS = 0 V - 0.87 1.5 V - 260 400 - 95 200 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
CS (TA = 25 °C, unless otherwise noted) Output Characteristics Transconductance Capacit ance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 100 150 200 250 0 4 8 12 16 20 2nd line ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 2nd line VGS = 10 V thru 6 V VGS = 3 V VGS = 4 V VGS = 5 V 100 1000 10000 120 160 200 0 1 02 03 04 05 0 Axis Title 1st line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Current (A) 2nd li ne TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 500 1000 1500 2000 2500 0 6 12 18 24 30 Axis Title 1st line 2nd line 2nd line C - Capacitance (p VDS - Drain-to-Source Voltage (V) 2nd line Crss Coss Ciss 100 1000 10000 100 02468 1 0 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 2nd line TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 0.000 0.002 0.004 0.00 0.008 0.010 0 2 04 06 08 0 1 0 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 2nd li ne VGS = 4.5 V VGS = 10 V 100 1000 10000 0 1 02 03 04 05 0 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 2nd line ID = 50 A VDS = 20 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
CS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Tempera ture On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 100 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) 2nd line ID = 30 A VGS = 10 V VGS = 4.5 V 100 1000 10000 0.01 0.02 0.03 0.04 0.05 02468 1 0 Ax is Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 2nd line TJ = 25 °C TJ = 150 °C 100 1000 10000 0.001 0.01 0.1 100 0 0 .2 Axis Title 1st line 2nd line 2nd line IS - Source Current (A) VSD - Source-to-Drain Voltage (V) 2nd line TJ = 150 °C TJ = 25 °C 100 1000 10000 -1.4 -1.0 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line VGS(th) Variance (V) TJ - Temperature (°C) 2nd line ID = 5 mA ID = 250 μA 100 1000 10000 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) 2nd line ID = 1 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating Area No rmalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 10000 0.01 0.1 100 1000 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TC = 25 °C Single pulse BVDSS limited 100 ms, 1 s, 10 s, DC 10 ms 1 ms 100 μs ID limited 100 1000 10000 0.01 0.1 0.0001 0.00 1 0. 01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized Effective Tr ansient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 PDM t2 t1 Notes: E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Thermal Trans ient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 100 1000 10000 0.01 0.1 0.0001 0.001 0.01 0. 1 1 10 Axis Title 1st line 2nd line Normalized Effective Tr ansient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
- M = 1.32 mm to 1.62 mm (dim ension including pr otrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
- Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x e 2 x b2 2 x b
0.010 A BMM
± 0.004 BM Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A)
2 C C
E B H Seating plane Gauge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN . ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP50N03T A ll data sheet.com