PHP30NQ15T VBSEMI | Alldatasheet

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N-Channel 150 V (D-S) MOSFET

FEATURES

  • TrenchFET® power MOSFET
  • Package wi th low thermal resistance
  • 100 % Rg and UIS tested Notes a. Pac k age limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) at VGS = 10 V 0.075 ID (A) 20 Configuration S ingle Package TO-220 TO-220AB Top View S S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u nless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 14 Continuous Source Current (Diode Conduction) a IS 50 Pulsed Drai n Current b IDM 60 Single Pulse A valanche Energy L = 0.1 mH IAS 30 Single Puls e Avalanche Current EAS 45 mJ Maximum Power Dissipation b TC = 25 °C PD

107 W TC = 125 °C 35

torage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE R ATINGS PARAMETER SYMBOL LIMIT UNI T Junction-to-Ambient PCB Mount c RthJA 50 °C/WJunction-to-Case (Drain) RthJC 1.4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

a. Puls e te st; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, u nless otherwise noted) PARAMETER SYMB OL T EST CONDITIONS MIN. TYP. MAX. UNIT Static Drai n-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 150 - - V Gate-Sou rce Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 - 3.5 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 150 V - - 1 μA VGS = 0 V V DS = 150 V, TJ = 125 °C - - 5 0 VGS = 0 V V DS = 150 V, TJ = 175 °C - - 2 50 On-S tate Drain Current a I D(on) V GS = 10 V VDS ≥ 5 V 30 - - A Drain-So urce On-State Resistance a R DS(on) VGS = 10 V ID = 12 A - - 0.080 ΩVGS = 10 V I D = 12 A, TJ = 125 °C - - 0.116 VGS = 10 V I D = 12 A, TJ = 175 °C - - 0.158 Forward Tr ansconductance b gfs VDS = 12 V, ID = 15 A - 33 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 1286 1660 pF Output Capacitance Coss Revers e Transfer Capacitance Crss Total Gate Charge c Qg VGS = 10 V VDS = 75 V, ID = 20 A nC Gate-Sourc e Charge c Qgs Gate-Drain Charge c Qgd Gate Resistanc e Rg f = 1 MHz 0.35 1.0 3.2 Ω Tu rn-On Delay Time c td(on) VDD = 75 V, RL = 3 Ω ID ≅ 20A, V GEN = 10 V, Rg = 1 Ω -1 1 17 nsRise Ti me c tr -2 1 3 3 Turn-Off Delay Time c td(off) -2 0 3 0 Fall Time c tf -1 2 2 0 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 6 5 A Forwar d Voltage VSD IF = 20 A, VGS = 0 V - 0.85 1.5 V - 165 200 - 82 120 - 27 50 - 7.5 - - 10.2 - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

ACTERISTICS (TA = 25 °C, unless o therwise noted) Output Characteristics Transf er Characteristics On-Resistance vs. Drain Current Transfer Characteristics Transconductance Capacitance 0 2 4 6 8 10 ID - Drain Current (A VDS -D r a i n- t o -Source Voltage (V) VGS = 10 V thru 5V VGS = 4V VGS = 3 0 2 4 6 8 10 ID - Drain Current (A VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.03 0.06 0.09 0.12 0.15 0 10 20 30 40 50 RDS(on) -O n - R esis tance (Ω) ID -D r a i n C u r r e n t ( A ) VGS = 10 V 0 2 4 6 8 10 ID - Drain Current (A VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 5 10 15 20 25 gfs -T r a nsconducta nce (S) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 500 1000 1500 2000 2500 3000 0 15 30 45 60 75 C - Capacitance (pF) VDS -D r a i n- t o -Source Voltage (V) Ciss Coss Crss E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

ACTERISTICS (TA = 25 °C, unless o therwise noted) Gate Charge Source Drain Diode Forward Voltage Threshold Vo ltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 8 16 24 32 40 VGS - Gate-to-Source Voltage (V) Qg -T o t a l G ate Charge (nC) ID = 20A VDS = 75 V 0.001 0.01 0.1 100 0.0 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C -2 . 0 -1 . 4 -0 . -0 . 2 0.4 1.0 - 50 - 25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ -T e m p er a t u r e (°C) ID = 250 μA ID = 5 mA 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) -O n - R esis tance (Normalized) TJ - Junction Temperature (°C) ID = 12 A VGS = 10 V 0.00 0.05 0.10 0.15 0.20 02468 1 0 RDS(on) -O n - R esis tance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 150 160 170 180 190 200 - 50 - 25 0 25 50 75 100 125 150 175 ID = 10 mA VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Safe Operati ng Area Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 100 1000 0.01 0.1 1 10 100 1000 ID - Drain Cu rrent (A) VDS -D r a i n- t o -Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Puls e BVDSS Limited 10 ms 100 μs 100 ms, 1 s, 10 s, DC Square Wave Pulse Dur ation (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Tr ansient Thermal Impedance 1000 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1001 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Note

  • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective T ransient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com
  • M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PHP30NQ15T A ll data sheet.com