PBR941B

PBR941B_15 JMNIC | Alldatasheet

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Preliminary specification 2001 Jan 18 DISCRETE SEMICONDUCTORS PBR941B UHF wideband transistor book, halfpage M3D088

2001 Jan 18 2

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B

FEATURES

• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. PINNING SOT23 PIN DESCRIPTION 1b a s e 2 emitter 3 collector handbook, halfpage MSB003Top view Fig.1 Simplified outline (SOT23). Marking code : LBp QUICK REFERENCE DATA Note 1. T s is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cre feedback capacitance I C =0 ; VCB =6V ; f=1M H z − 0.3 − pF fT transition frequency I C =1 5m A ; VCE =6V ; fm =1G H z 7 9 − GHz GUM maximum unilateral power gain I C =1 5m A ; VCE =6V ; Tamb =2 5 °C; f = 1 GHz − 16 − dB NF noise figure ΓS = Γopt; IC =5m A ; VCE =6V ; f=1G H z − 1.5 2.5 dB Ptot total power dissipation T s =6 0 °C; note 1 −− 360 mW Rth j-s thermal resistance from junction to soldering point −− 320 K/W

2001 Jan 18 3

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.5 V IC collector current (DC) − 50 mA IC(AV) average collector current − 50 mA Ptot total power dissipation T s =6 0 °C; note 1 − 360 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 320 K/W

2001 Jan 18 4

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B CHARACTERISTICS Tj =2 5 °C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming s 12 is zero. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage I C =1 0 0µA; IE =0 2 0 −− V V(BR)CEO collector-emitter breakdown voltage IC =1 0 0µA; IB =0 1 0 −− V V(BR)EBO emitter-base breakdown voltage I E =1 0 µA; IC =0 1 . 5 −− V VBEF forward base-emitter voltage I E =2 5m A −− 1.05 V ICBO collector-base leakage current V CB =1 0V ; IE =0 −− 100 nA IEBO emitter-base leakage current V EB =1V ; IC =0 −− 100 nA hFE DC current gain I C =5m A ; VCE = 6 V 100 150 200 IC =1 5m A ; VCE =6V − 150 − AC characteristics Cre feedback capacitance I C =0 ; VCB =6V ; f=1M H z − 0.3 − pF fT transition frequency I C =1 5m A ; VCE =6V ; fm =1G H z 7 9 − GHz |s21|2 insertion gain I C =1 5m A ; VCE = 6 V; f = 1 GHz 13 15 − dB GUM maximum unilateral power gain; note 1 IC =1 5m A ; VCE =6V ; Tamb =2 5 °C; f = 1 GHz − 16 − dB IC =1 5m A ; VCE =6V ; Tamb =2 5 °C; f = 2 GHz − 10 − dB NF noise figure ΓS = Γopt; IC =5m A ; VCE =6V ; f=1G H z − 1.5 2.5 dB ΓS = Γopt; IC =5m A ; VCE =6V ; f=2G H z − 2.1 − dB GUM 10 s21 2

2001 Jan 18 5

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, halfpage 0 50 100 Ts (°C) Ptot (mW) 200 400 300 100 200 150 MDA871 Fig.2 Power derating as a function of soldering point temperature. handbook, halfpage IC (mA) 10 50 160 120 20 30 40 MCD974 hFE Fig.3 DC current gain as a function of collector current; typical values. VCE =6V . handbook, halfpage 04 1 2 0.5 0.4 MGS498 0.3 0.2 0.1 VCB (V) Cre (pF) Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC =I c =0 ; f=1M H z . handbook, halfpage 05 0 10 20 30 40 IC (mA) fT (GHz) MCD975 Fig.5 Transition frequency as a function of collector current; typical values. VCE =6V ; fm =1G H z ; Tamb =2 5 °C.

2001 Jan 18 6

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, halfpage 01 0 2 0 4 0 gain (dB) GUM MSG MGS500 IC (mA) Gmax Fig.6 Gain as a function of collector current; typical values. f=1G H z ; VCE =6V . GUM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. handbook, halfpage50 MGS501 102 103 104 gain (dB) f (MHz) GUM MSG Gmax Fig.7 Gain as a function of frequency; typical values. IC =5m A ; VCE =6V . GUM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. handbook, halfpage50 MGR502 102 103 104 gain (dB) f (MHz) GUM MSG Gmax Fig.8 Gain as a function of frequency; typical values. IC =1 5m A ; VCE =6V . GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. handbook, halfpage50 MGS503 102 103 104 gain (dB) f (MHz) GUM MSG Gmax Fig.9 Gain as a function of frequency; typical values. IC =3 0 m A ; VCE =6V . GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.

2001 Jan 18 7

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, halfpage4 MGS504 NF (dB) (2) (3) (1) (5) (6) (4) 10−1 11 0 1 0 2 IC (mA) Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =6V . (1) f = 2 GHz. (2) f = 1.5 GHz. (3) f = 1 GHz. (4) f = 900 MHz. (5) f = 800 MHz. (6) f = 500 MHz. handbook, halfpage4 MGS505 102 103 104 NF (dB) f (MHz) (2) (3) (1) Fig.11 Minimum noise figure as a function of frequency; typical values. VCE =6V . (1) I C =3 0m A . (2) I C =1 5m A . (3) I C =5m A .

2001 Jan 18 8

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth MGS506 0.2 0.6 0.4 0.8 1.0 1.0 −0.2 −0.5 0.5 1 2 5180° −135° −90° −45° 45° 90° unstable region load unstable region source (2) (3) (4) (5) Γopt (6) (1) +0.2 +0.5135° Fig.12 Common emitter available gain, noise and stability circles; typical values. f=1G H z ; VCE =6V ; IC =5m A ; Zo =5 0 Ω. (1) G = 17 dB. (2) G = 16 dB. (3) G = 15 dB. (4) NF = 1.6 dB. (5) NF = 1.8 dB. (6) NF = 2 dB. handbook, full pagewidth MGS507 0.2 0.6 0.4 0.8 1.0 1.0 +0.5 −0.5 0.2 1 2 5180° −135° −90° −45° 45° 90° 135° (2) (3) (4) (5) (6) (7) unstable region load unstable region source (1) Γopt +0.2 0.5 −0.2 Fig.13 Common emitter available gain, noise and stability circles; typical values. f=2G H z ; VCE =6V ; IC =5m A ; Zo =5 0 Ω. (1) G max =1 0 . 9d B . (2) G = 10 dB. (3) G = 9 dB. (4) G = 8 dB. (5) NF = 2.1 dB. (6) NF = 2.3 dB. (7) NF = 2.5 dB.

2001 Jan 18 9

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth MGS508 0.2 0.6 0.4 0.8 1.0 1.0 +0.5 +0.2 −0.2 −0.5 0.2 0.5 1 2 5180° −135° −90° −45° 45° 90° 135°

100 MHz

200 MHz

500 MHz

1 GHz

2 GHz

3 GHz

Fig.14 Common emitter input reflection coefficient (s 11); typical values. VCE =6V ; IC =1 5m A ; Zo =5 0 Ω. handbook, full pagewidth MGS509 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135° Fig.15 Common emitter forward transmission coefficient (s 21); typical values. VCE =6V ; IC =1 5m A .

2001 Jan 18 10

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth MGS510 180° −135° −90° −45° 45° 90° 135° Fig.16 Common emitter reverse transmission coefficient (s 12); typical values. VCE =6V ; IC =1 5m A . handbook, full pagewidth MGS511 0.2 0.6 0.4 0.8 1.0 1.0 +0.5 +0.2 −0.2 −0.5 0.2 0.5 1 2 5180° −135° −90° −45° 45° 90° 135°

500 MHz1 GHz

Fig.17 Common emitter output reflection coefficient (s 22); typical values. VCE =6V ; IC =1 5m A ; Zo =5 0 Ω.

2001 Jan 18 11

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PACKAGE OUTLINE UNIT A1 max. bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X HE E w M v M A B AB 012 m m scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

2001 Jan 18 12

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B DATA SHEET STATUS Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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