PA110BV VBSEMI | Alldatasheet

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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET 1 0 0 % U I S T e s t e d

APPLICATIONS

 High Frequency Boost Converter  LED Backlight for LCD TV Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady stat e conditions is 85 °C/W. d. Based on T C = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)d Qg (Typ.) 100 0.124 at VGS = 10 V 4.2 4.6 nC 0.128 at VGS = 4.5 V 3.9 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.2 A TC = 70 °C 3.5 TA = 25 °C 3.0a, b TA = 70 °C 2.4a, b Pulsed Drain Current IDM 16 Continuous Source-Drain Diode Current TC = 25 °C IS 4.0 TA = 25 °C 2a, b Single Avalanche Current L = 0.1 mH IAS 6 A Single Avalanche Energy EAS 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 4.8 WTC = 70 °C 3 TA = 25 °C 2.4a, b TA = 70 °C 1.5a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t  10 s R thJA 42 53 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 21 26 D S D D G D SO-8 Top View 1 S S N-Channel MOSFET G D S PA110BV www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 110 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 7.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 8A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 2.7 A VGS 4.5 V, ID = 2.5 A Forward Transconductancea gfs VDS = 10 V, ID = 2.7 A 7S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 470 pFOutput Capacitance Coss 50 Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 2.7 A 7.1 11 nCVDS = 50 V, VGS = 6 V, ID = 2.7 A 4.6 7 Gate-Source Charge Qgs 1.7 Gate-Drain Charge Qgd 2 Gate Resistance Rg f = 1 MHz 3  Tur n-On Delay Time td(on) VDD = 50 V, RL = 23.8  ID  2.1 A, VGEN = 6 V, Rg = 1  10 15 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tf 10 15 Tur n-On Delay Time td(on) VDD = 50 V, RL = 23.8  ID  2.1 A, VGEN = 10 V, Rg = 1  10 15 Rise Time tr 10 15 Turn-Off Delay Time td(off) 12 20 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4 A Pulse Diode Forward Current ISM 8 Body Diode Voltage VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 50 80 ns Body Diode Reverse Recovery Charge Qrr 75 120 nC Reverse Recovery Fall Time ta 28 ns Reverse Recovery Rise Time tb 22 PA110BV www.VBsemi.com 0.124 0.128 1 3 V g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge VGS = 10 V thru 6 V 4 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 5 V - On-Resistance ()RDS(on) 0.00 0.05 0.10 0.15 0.20 0.25 02468 ID - Drain Current (A) VGS = 10 V VGS = 4.5V 024 68 ID = 2.7 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 50 V VDS = 80 V 024 68 VDS = 50 V VDS = 80 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0123456 TC = 125 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID - 55 °C 100 200 300 500 600 0 1 02 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) rss Coss Ciss C - Capacitance (pF) C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2.7 A TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) PA110BV www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C TJ = 25 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 2.0 2.4 2.8 3.2 3.6 4.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 02468 1 0 ID = 2.7 A - On-Resistance ()RDS(on) VGS - Gate-to-Source Voltage (V) Power (W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area, Junction-to-Ambient - Drain Current (A)I D 0.01 0 0 0 10 111 . 0 0.1 TA = 25 °C Single Pulse 10 ms 1 s DC 100 µs 100 1 ms VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Limited by R *DS(on) BVDSS Limited 10 s 100 ms PA110BV www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) PA110BV www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1010-110-4 1 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse PA110BV www.VBsemi.com g A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 EC N: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S PA110BV www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index PA110BV www.VBsemi.com g A ll data sheet.com

All products due to improve reliability, function or design or fo r other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees , and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclo sure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the p roduct for any particular purpose of any goods or continuous production. To the maximum extent permi tted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising ou t of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchanta bility guarantee. Statement on certain types of applications are based on knowled ge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the T aiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-bindin g. It is the customer's responsibility to verify specific product features in the products described in the specification i s appropriate for use in a particular application. Parameter data sheets and technical specifications can be prov ided may vary depending on the application and performance over time. All operating parameters, including typic al parameters must be made by customer's technical experts validated for each customer application. Pro duct specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limi ted to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wh erein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such a pplications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are rela ted to product design applications and other terms and conditions in writing. The information provided in this document and the company's prod ucts without a license, express or implied, by estoppel or otherwise, to any intellectual property rights gran ted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respect ive representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the pr oducts are determined to be oHS compliant and meets the definition of restrictions under Dire ctive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazar dous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifi edasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHS Directive2002/95/EC.We confirm that all products identified as consistent with the Directiv e 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its prod ucts comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Pl ease note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709 PA110BV www.VBsemi.com A ll data sheet.com