PA110BDA

PA110BDA VBSEMI | Alldatasheet

Document overview

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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  175 °C Junction Temperature  PWM Optimize d  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A) 100 0. at VGS = 10 V N-Channel MOSFET G D S Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C ID A TC = 125 °C 13 Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction) IS 3 Avalanche Current IAS 3 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ Maximum Power Dissipation TC = 25 °C PD 96b WTA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambienta t  10 s RthJA 15 18 °C/WSteady State 40 50 Junction-to-Case (Drain) RthJC 0.85 1.1 151 T O-252 S GD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of ope rating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 40 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 3 A 0. VGS = 10 V, ID = 3 A, TJ = 125 °C 0. VGS = 10 V, ID = 3 A, TJ = 175 °C 0.140 VGS = 4.5 V ID = 3 A 0. Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 35 S Dynamica Input Capacitance Ciss VGS = 0 V, VDS = 25 V, F = 1 MHz 950 pFOutput Capacitance Coss 120 Reverse Transfer Capacitance Crss 60 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 3 A 24 41 nCGate-Source Chargec Qgs 8 Gate-Drain Chargec Qgd 12 Gate Resistance Rg 0.5 2.9  Tur n-On Delay Timec td(on) VDD = 50 V, RL = 5.2 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 15 25 nsRise Timec tr 50 75 Turn-Off Delay Timec td(off) 30 45 Fall Timec tf 60 90 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM 5 A Diode Forward Voltageb VSD IF = 3 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 3 A, dI/dt = 100 A/µs 180 250 ns 114 120 120 1.0 2.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless oth erwise noted) Output Characteristics Transconductance Cap acitance VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 02468 1 0 4 V VGS = 10 V thru 5 V 2 V 3 V 0 1 02 03 04 0 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 300 600 900 1200 1500 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge VGS - Gate-to-Source Voltage (V) - D r a i n Current (A)I D 0123456 -5 5 ° C TC = 125 °C 25 °C - On-Resistance () ID - Drain Current (A) RDS(on) 0.0 0.1 0.2 0.3 0.4 0 1 02 03 04 0 VGS = 10 V V GS = 5 V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 0 1 02 03 04 05 06 0 VDS = 100 V ID = 19 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) THERMAL RATINGS On-Resistance vs. Junction Temperature 0.0 0.05 0.1 0.15 0.2 0.25 0.3 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature ( )°C VGS = 10 V ID = 5 A RDS(on) - On-Resistance (Normalized) Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) - S ource Current (A)I S 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C Maximum Avalanche Drain Current vs. Case Temperature TC - Case Temperature (°C) - Drain Current (A)I D 0 25 50 75 100 125 150 175 Safe Operating Area 0.1 00 0 1 0 1 1 1 . 0 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms 1 s, DC 100 µs 10 µs 100 1 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 1010-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.05 0.02 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

• Dimension L3 is for refere nc e only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw PA110BDA A ll data sheet.com