P16M40CT SEMIWELL | Alldatasheet
Document overview
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Technical content
Features
/Gb1d Plastic material meets UL94V-0 /Gb1d Metal silicon junction /Gb1d Very low forward voltage drop /Gb1d High current / High surge capability /Gb1d Guarding for over voltage protection /Gb1d Lead solderable per MIL-STD202,method 208 guaranteed /Gb1d Lead temperature for soldering purpose 250°C Max for 10 second /Gb1d Weight : 2.2 gram (approximately) General Description The P16M40CT schottky Rectifier has been designed for applcations requiring low forward voltage drop and switching power supply, dc-dc converter, free-wheeling diode, battery charging, polarity protection application. Symbol /G33a/G33a/G33a/G33a /G33a/G33a/G33a/G33a /G33a/G33a/G33a/G33a TO-220 /Gd58 P16M40CTP16M40CTP16M40CTP16M40CT SemiWell Semiconductor 16A Schottky Barrier Rectifier copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. /Gd58/Gb98 /Gb98 PROVISIONAL 1 2 3
Electrical Characteristics
Symbol Parameter Min Typ Max Units IR Reverse Leakage Current V R = VRRM TC = 25 °C T C = 125 °C - - 1 50 mA VF Forward Voltage Drop I F = 8 A TC = 25 °C I F = 8 A TC = 125 °C I F = 16 A TC = 25 °C I F = 16 A TC = 125 °C - - 0.55 0.50 0.70 0.62 V CT Typical Junction Capacitance @ fT=1MHZ , VR=4V , Tj =25/Gb07 700 PF P16M40CTP16M40CTP16M40CTP16M40CT
Peak Forward Surge Current, IFSM[A] Reverse Voltage, VR[V] 0 25 50 75 100 125 150 Average forward Current, IF(AV)[A] Case Temperature, TC[]/Gb45 0.1 1 10 100 100 1000 . Notes/Gb54 1. TJ = 25/Gb45 2. F = 1MHz 3. Vsig = 50mVP-P Junction capacitance, CJ[pF] Reverse Voltage, VR[V] 0 8 16 24 32 40 48 56 0.01 0.1 TJ=125/Gb45 75[ ]/Gb45 25[ ]/Gb45 Reverse Current, IR[mA] Reverse Voltage, VR[V] 0.1 125/Gb45 TJ=25/Gb45 Forward Voltage Drop, VF[V] Forward Current, IF[A] Fig 1. VF-IF Characteristic Fig 2. VR-IR Characteristic Fig 3. Typical junctiion capacitance Fig 4. Forward current derating curve Fig 5. Maximum non-repetitive forward surge current per diode P16M40CTP16M40CTP16M40CTP16M40CT