MTP5N40E VBSEMI | Alldatasheet

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FEATURES

  • Lower Gate Ch arge Qg Results in Simpler Drive Reqirements Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limi ted by maximum junction temperature (see fig. 11). c. ISD  14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()V GS = 10 V 0.660 Qg (Max.) (nC) 81 Qgs (nC) 20 Qgd (nC) 36 Configurat ion Single N-Channel MOSFET G D S TO-220AB G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S Y MBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 8.1 Pulsed Dr ain Currenta IDM 50 Linear Derating Factor 2.0 W/°C Single P ulse Avalanche Energyb EAS 560 mJ Aval anche Currenta IAR 13 A Repetitive A valanche Energya EAR 25 mJ Maximum Power Dissipation TC = 25 °C PD 250 W Peak Diode Recovery dV/dtc dV/dt 9.2 V/ns Operatin g Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 So ldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

/$IBOOFM507 %4 Power MOSFET MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction tem perature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C oss eff. is a fi xed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESI STANCE RATINGS PARAMETER SYMB OL TYP. MAX. UNIT Maximum Juncti on-to-Ambient RthJA -6 2 °C/WCase-to-Si nk, Flat, Greasd Surface RthCS 0.50 - Maximum Junction-to -Case (Drain) RthJC -0 .50 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TES T CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdow n Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperatur e Coefficient VDS/TJ Reference to 25 ° C , ID = 1 mA - 0.55 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS V GS = ± 20V Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-S ource On-State Resistance RDS(on) V GS = 10 V ID = 8.4 Ab - 0.660  Forwar d Transconductance gfs VDS = 50 V, ID = 8.4 A 8.1 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1910 - pF Ou tput Capacitance Coss - 290 - Rev erse Transfer Capacitance Crss -1 1- Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 2730 - VDS = 400 V, f = 1.0 MHz - 82 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 160 - Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b -- 81 nC Gate-Source Char ge Qgs -- 20 Gate-Drain Charge Qgd -- 36 Turn-On Dela y Time td(on) VDD = 250 V, ID = 14 A, Rg = 7.5, see fig . 10b -1 5- ns Rise Ti me tr -3 9- Turn-O ff Delay Time td(off) -3 9- Fall T ime tf -3 1- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode A Pulsed Diode Forward Currenta ISM -- 5 6 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb -- 1 . 5 V Bo dy Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, TJ = 125 °C, dI/dt = 100 A/μsb - 370 550 ns Bod y Diode Reverse Recovery Charge Q rr -4 .4 6. 5 μ C Body Diode Reverse Recovery Current I RRM -2 1 3 1 A Fo rward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G - - ± nA100 MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature ID, Drain-to-Source Current (A) 91095_01 20 µs Pulse Width TJ = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) 1 10 102 10-2 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 0.1 0.1 102 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T J = 150 °C 91095_02 4.5 V 1 10 102 0.1 0.1 102 20 µs Pulse Width VDS = 50 V ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 6 8 10 12 14 164 91095_03 TJ = 25 °C TJ = 150 °C 102 0.1 ID = 13 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 91095_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Fig. 5 - Typical C apacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 10 102 C, Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91095_05 105 102 103 104 1 103 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 12.5 7.5 2.5 0 12 60483624 VDS = 100 V VDS = 250 V VDS = 400 V 91095_06 ID = 14 A VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) VGS = 0 V 91095_07 TJ = 25 °C TJ = 150 °C 102 0.1 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse 102 103 0.1 10 102 103 104 91095_08 MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Fig. 9 - Maxi mum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 150 ID, Drain Current (A) TC, Case Temperature (°C) 91095_09 1251007550 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-3 10-5 10-4 10-3 10-2 0.1 1 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t 1/t2 2. Peak TJ = PDM x ZthJC + TC Single Pulse (Thermal Response) D = 0.50 0.20 0.05 0.02 0.01 91095_11 0.10 10-2 MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Fig. 12a - Uncl amped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A RG IAS 0.01 Ωtp D.U.T. LVDS - VDD Driver 15 V 20 V IAS VDS tp 25 50 75 100 125 150 230 460 690 920 1150 Starting Tj, Junction Temperature (°C) EAS, Single Pulse Avalanche Energy (mJ) ID TOP BOTTOM 6.3A 8.9A 14A QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

  • M* = 0.0 52 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C DIM. MILLIMETERS INCH ES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 MTP5N40E E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

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