MTP30P06V

MTP30P06V VBSEMI | Alldatasheet

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Technical content

P-Channel 60 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 6124 9-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Complia nt to RoHS Directive 2002/95/EC

APPLICATIONS

P o w e r Sw i t c h  Load Switch in High Current Applications  DC/DC Converters Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. Whe n mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) - 60 0.0600 at VGS = - 10 V - 30 670.0850 at VGS = - 4.5 V - 24 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles s otherwise noted) Parameter Symbol Limit U nit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 30 A TC = 70 °C - 29 Pulsed Drain Current (t = 300 µs) IDM - 100 Avalanche Current IAS - 32 Single Avalanche Energya L = 0.1 mH EAS 51 mJ Maximum Po wer Dissipationa TC = 25 °C PD 41.7b W TA = 25 °Cc 2.1 Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limi t Unit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/W Junction-to-Cas e (Drain) RthJC 3 TO-220AB Top View GD S S G D P-Channel MOSFET MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. Pu lse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbol Test Co nditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 14 A 0.055 VGS = - 4.5 V, ID = - 12 A 0.075 Forward Tra nsconductancea gfs VDS = - 20 V, ID = - 14 A 40 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 30 V, f = 1 MHz 2765 pFOutput Capacitance Coss 330 Reverse Transfe r Capacitance Crss 280 Total Gate Chargec Qg VDS = - 30 V, VGS = - 10 V, ID = - 14 A 67 100 nCGate-Source Chargec Qgs 13.5 Gate-Drain Chargec Qgd 14 Gate Resistance Rg f = 1 MHz 0.5 2.5 5  Tur n-On Delay Timec td(on) VDD = - 30 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  10 20 nsRise Timec tr 11 20 Turn-Off Dela y Timec td(off) 42 63 Fall T imec tf 12 20 Drain-Source Bod y Diode Ratings and Characteristics TC = 25 °Cb Continuous Current IS - 36 A Pulsed Current ISM - 100 Forward Voltagea VSD IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V Reverse Reco very Time trr IF = - 10 A, dI/dt = 100 A/µs 38 57 ns Peak R everse Recovery Current IRM(REC) 2.3 3.5 A Reverse Recove ry Charge Qrr 40 60 nC MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Output Characteristics Transfer Characteristics T ransconductance 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-So urce Voltage (V) VGS = 10 V thr u 4 V VGS = 3 V 0.2 0.4 0.6 0.8 1.0 0 0.7 1.4 2.1 2.8 3.5 ID - Drain Current (A) VGS - Gate-to-Source Volt age (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 6 12 18 24 30 gfs - Transconductance (S) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C On-Resistance vs. Drain Cur rent On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.005 0.010 0.015 0.020 0.025 0.030 0 2 04 06 08 0 1 0 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0.010 0.016 0.022 0.028 0.034 0.040 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 14 A 0 1 42 84 25 67 0 VGS - Gate-to-Source Volt age (V) Qg - Total Gate C harge (nC) VDS = 32 V VDS = 10 V VDS = 20 V ID = 14 A MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless ot herwise noted) Source-Drain Diode Fo rward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 860 1720 2580 3440 4300 0 1 02 03 04 0 C - Capacitance (pF) VDS - Drain-to-So urce Voltage (V) Ciss Coss Crss 0.7 1.0 1.3 1.6 1.9 2.2 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) -O n - R e si s t a n c e(Normalized) TJ - Junction Temperature (°C) ID = 14 A VGS = 10 V VGS = 4.5 V Threshold Voltage Drain Source Breakdo wn vs. Junction Temperature Current Derating 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T e m p e ra t u r e (°C) ID = 250 μA - 50 - 25 0 25 50 75 100 125 150 VDS (V) Drain-to-Source Voltage TJ -T em p e ra t u r e (°C) ID = 250 μA 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Single Pulse Avalanche Current Capability vs . Time 100 IDAV (A) Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-So urce Voltage (V) * VGS > minimum VGS at which RDS(on) is specified DC, 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Im pedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Normalized Effective T ransient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. MTP30P06V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com