MTP3055E SYC | Alldatasheet

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Technical content

N-CHANNEL 60V - 0.1Ω -1 2 AT O - 2 2 0 STripFET™ POWER MOSFET ■ TYPICAL R DS (on) = 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet TYPE V DSS R DS(on) ID MTP3055E 60 V < 0.15 Ω 12 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 60 V VDGR Drain-gate Voltage (RGS =2 0kΩ 60 V VGS Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 12 A IDm Drain Current (pulsed) at TC = 100°C 9A IDM (/circle6 ) Drain Current (pulsed) 48 A PTOT Total Dissipation at TC = 25°C 40 W Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C TO-220 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W Rthj-amb Rthc-s Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 °C/W °C/W Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 12 A EAS Single pulse Avalanche Energy (starting Tj= 25°C, ID =IAR,VDD =2 5V 50 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating x 0.8, TC =1 2 5° C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250 µA 2 2.9 4 V R DS(on) Static Drain-source On Resistance VGS =1 0V ,ID =7A 0.1 0.15 Ω ID(on) On State Drain Current VDS> ID(on) XR DS(on)max VGS = 10V 12 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =ID(on) XR DS(on)max ,ID =6A 4 6S C iss Input Capacitance VDS =2 5V ,f=1M H z ,VGS =0 760 pF C oss Output Capacitance 100 pF C rss Reverse Transfer Capacitance 30 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING RESISTIVE LOAD SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Time Rise Time Turn-off-Delay Time Fall Time V DD =3 0V ,ID =7A R G =5 0Ω VGS = 10V (see test circuit) ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge ID = 12 A,VGS =1 0V , VDD =4 0 V (see test circuit) nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 12 A ISDM (2) Source-drain Current (pulsed) 48 A VSD (1) Forward On Voltage ISD =1 2A ,VGS =0 2V trr Q rr Reverse Recovery Time Reverse Recovery Charge ISD = 12 A, di/dt = 100 A/µs, VDD =3 0V ,Tj= 150°C 0.17 ns µC Safe Operating Area Thermal Impedance

Static Drain-source On ResistanceTransconductance Output Characteristics Gate Charge vs Gate-source Voltage Capacitance Variations Transfer Characteristics

Source-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C