MMFTN123 VBSEMI | Alldatasheet
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Technical content
N-Channel 100-V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET ® Power MOSFET Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (mA) 100 2.8 at VGS = 10 V 260 SOT -23 G S D Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on F R4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit U nit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C ID 260 mATA = 100 °C 150 Pulsed Drain Currenta IDM 800 Power Dissipationb TA = 25 °C PD 0.37 WTA = 100 °C 0.15 Maximum Junction-to-Ambientb RthJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C N-Channel MOSFET G D S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Cond itions Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12 .5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µAVDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 1000 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta ID(on) VGS = 10 V, VDS = 7.5 V 500 mAVGS = 4.5 V, VDS = 10 V 300 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 200 mA ΩVGS = 4.5 V, ID = 150 mA Forward Transconductancea gfs VDS = 10 V, ID = 100 mA 100 mS Diode Forward Voltage VSD IS = 100 mA, VGS = 0 V 1.3 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID ≅ 150 mA 0.5 nC Input Capacitance Ciss VDS = 25 V, VGS = 0 V f = 1 MHz pFOutput Capacitance Coss 7 Reverse Transfer Capacitance Crss 2.0 Switchinga, b, c Tur n-On Tim e td(on) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω ns Turn-Off Time td(off) 30 2.8 3.0 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charg e 0.0 0.2 0.4 0.6 0.8 1.0 012 345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 10 V 3 V 5 V 4 V
6 V7 V
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 200 400 600 800 1000 ID - Drain Current (mA) V GS = 4.5 V V GS = 10 V - On-Resistance (Ω)RDS(on) VDS = 10 V ID = 250 mA - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Res istance vs. Junction Temperature 300 600 900 1200 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (mA)ID T J = - 55 °C 125 °C 25 °C 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss VGS = 0 V 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 TJ - Junction Temperature (°C) V GS = 10 V at 500 mA V GS = 4.5 V at 200 mA (Normalized) - On-ResistanceRDS(on) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise not ed Source-Drain Diode Forward Voltage T hreshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.0 0.3 0.6 0.9 TJ = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = - 55 °C V GS = 0 V TJ = 25 °C Variance (V)VGS(th) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Am bient 02468 10 V GS - Gate-to-Source Voltage (V) ID = 500 mAID = 200 mA - On-Resistance (Ω)RDS(on) 0.01 2.5 100 600 0.1 Power (W) Time (s) 1.5 0.5 T A = 25 °C Normalized Thermal Transient Imped ance, Junction-to-Ambient 10 10 -3 10 -2 1 10 60010 -1 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Ther mal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th JA = 350 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
Normalized Thermal Transien t Impedance, Junction-to-Foot 10 -3 10 -2 1 1010 -1 10 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T r ansient Thermal Impedance THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Note
- The characteristics shown in the two gr aphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for gene ral guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal im pedance charac teristics which are de veloped fr om empirical m easurements. The la tter is va lid for the part mounted on printed circui t board - FR 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Re v. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw MMFTN123 A ll data sheet.com
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