MF35

MF35 DYNEX | Alldatasheet

Document overview

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Technical content

APPLICATIONS

n Inverse, Parallel Or Series Connected Diode n Power Supplies n High Frequency Applications

FEATURES

n Fast Recovery Characteristics VOLTAGE RATINGS KEY PARAMETERS VRRM 1200V IF(AV) 40A IFSM 400A Q r 10µC trr 0.2ns 1200 1000 800 600 MF35 - 1200 MF35 - 1000 MF35 - 800 MF35 - 600 Conditions V RSM = VRRM +100V Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF35-1200R. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: DO5. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Units Max. IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Half sine wave resistive load, Tcase = 65oC4 0 A Tcase = 65oC6 3 A Tcase = 65oC5 0 A MF35 Fast Recovery Diode Replaces March 1998 version, DS4625-3.1 DSDS4625-4.0 January 2000

Conditions Max. Units 400 A

800 A 2sI2t for fusingI2t

Surge (non-repetitive) forward currentIFSM ParameterSymbol 10ms half sine; with VRRM ≤ 10V, Tj = 125oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W- 0.2Thermal resistance - case to heatsinkR th(c-h) Thermal resistance - junction to caseR th(j-c) Mounting torque 3.5Nm with mounting compound Symbol Parameter - 0.8 oC/W Min. trr Symbol Typ. UnitsParameter VFM Forward voltage IRM Peak reverse current Reverse recovery time Q R Recovered charge VTO Threshold voltage rT Slope resistance At Tvj = 125 o C - 7.0 m Ω At Tvj = 125 o C - 1.2 V -1 0 µC - 200 ns At VRRM , Tcase = 100oC- m A At 120A peak, Tcase = 25 o C - 2.0 V Conditions Max. CHARACTERISTICS - 125 oC ˚C125-55Storage temperature rangeTstg Tvj Virtual junction temperature Forward (conducting) - 125 oC 10ms half sine; Tj = 125oC Nm3.83.2Mounting torque- Reverse (blocking) IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C, VR = 100V IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C, VR = 100V

Fig.1 Maximum (limit) forward characteristics 0 1.0 2.0 3.0 Instantaneous forward voltage - (V) 100 150 200Instantaneous forward current - (A) Measured under pulse conditions Tj = 125˚C Tj = 25˚C 0 400 800 1200 Rate of rise of forward current - (A/µs) Transient forward voltage - (V) Tcase = 25˚C 200 600 1000 95% 12 3 5 41 0 5 0 Cycles at 50Hz Duration 350 200Peak half sinewave forward current - (A) 250 300

400 Tcase = 125˚C

VR = VRRM Fig.3 Surge (non-repetitive) forward current vs time Fig.4 Maximum transient thermal impedance Fig.2 Forward recovery voltage vs rate of rise of forward voltage 0.001 0.01 0.1 1.0 10 Time - (s) 0.25 0.50 0.75 1.00Thermal impedance - ˚C/W d.c.

Fig.5 Recovery time vs dIR /dt Fig.6 Peak reverse current vs dIR /dt 200 400 600 800 1000 1200Recovery time - (ns) 1 10 100 1000 Rate of rise of reverse current - (A/µs) IF = 100A IF = 50A IF = 10A Tcase = 125˚C (No snubber) Fig.7 Recovered charge vs dIR /dt Peak reverse current - (A) 1 10 100 1000 Rate of change of reverse current - (A/µs) IF = 100A IF = 50A IF = 10A Tcase = 125˚C (No snubber) Recovered charge - (µC) 1 10 100 1000 Rate of change of reverse current - (A/µs) IF = 100A IF = 50A IF = 10A Tcase = 125˚C (No snubber)

Fig.8 Frequency curves - square waveform Fig.9 Frequency curves - square waveform Fig.10 Energy per pulse - square waveform 50Hz 100 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A) 10000 5000 2500 1000 500 300 Tcase = 65˚ 50Hz 100 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A) 10000 5000 2500 1000 500 300 Tcase = 85˚ 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A)

Fig.11 Frequency curves - sine waveform Fig.12 Frequency curves - sine waveform Fig.13 Energy per pulse - sine waveform 50Hz 100 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A) 10000 5000 2500 1000 500 300 Tcase = 65˚ 50Hz 100 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A) 10000 5000 2500 1000 500 300 Tcase = 85˚ 10 100 1000 10000 Pulse width - (µs) 500 100 Peak current - (A)

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hex. 17.35mm AF max 2311.5 Ø4.0 Thread 1/4 in

28 UNF 2A

Weight: 20g ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Thyristor and diode measurement with a multi-meter AN4853 Use of V TO , rT on-state characteristic AN5001

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4625-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.