ME3502

ME3502 VBSEMI | Alldatasheet

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• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET 1 0 0 % Rg Tested  Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (A) N-Channel 20 0.022 at VGS = 10 V 5. 0.036 at VGS = 4.5 V 4.2 P-Channel - 20 0.030 at VGS = - 10 V - 3.4 0.079 at VGS = - 4.5 V - 2.5 TSOP-6 Top View 2.85 mm 3 mm D2G2 S1S2 D1G1 N-Channel MOSFET P-Channel MOSFET Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID 5. - 3.4 A TA = 70 °C 4.0 - 2.3 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C PD 1.15 WTA = 70 °C 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 93 110 °C/WSteady State 130 150 Maximum Junction-to-Lead Steady State RthJL 75 90 N- and P-Channel V (D-S) MOSFET ME3502 www.VBsemi.com 15 10 0 2 g A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 VVDS = VGS, ID = - 250 µA P-Ch - 0.7 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nAP-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V N-Ch 1 µA VDS = - 24 V, VGS = 0 V P-Ch - 1 VDS = 24 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 55 °C P-Ch - 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V N-Ch 3.7 AVDS = - 5 V, VGS = - 10 V P-Ch - 3 Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 2.5 A N-Ch 0.022 Ω VGS = - 10 V, ID = - 1.8 A P-Ch 0. VGS = 4.5 V, ID = 2.0 A N-Ch 0.030 VGS = - 4.5 V, ID = - 1.2 A P-Ch 0.079 Forward Transconductancea gfs VDS = 10 V, ID = 2.5 A N-Ch 4.3 SVDS = - 15 V, ID = - 1.8 A P-Ch 2.4 Diode Forward Voltagea VSD IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 VIS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10 Dynamicb Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A N-Ch 2.1 3.2 nC P-Ch 2.4 3.6 Gate-Source Charge Qgs N-Ch 0.7 P-Ch 0.9 Gate-Drain Charge Qgd N-Ch 0.7 P-Ch 0.8 Gate Resistance Rg N-Ch 0.5 2.4 ΩP-Ch 3 11 Tur n-On Delay Time td(on) N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω N-Ch 7 11 ns P-Ch 8 12 Rise Time tr N-Ch 9 14 P-Ch 12 18 Turn-Off Delay Time td(off) N-Ch 13 20 P-Ch 12 18 Fall Time tf N-Ch 5 8 P-Ch 7 11 Source-Drain Reverse Recovery Time trr IF = 1.05 A, dI/dt = 100 A/µs N-Ch 35 60 IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 30 60 ME3502 www.VBsemi.com 055 g A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 V thru 5 V 4 V

3 V2 V

0.00 0.01 0.02 0.03 0.04 0.05 01234567 RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V - On-Resistance (Ω) 01234 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 15 V ID = 1.8 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C TC = - 55 °C 125 °C 100 150 200 250 300 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) VGS = 10 V ID = 2.5 A ME3502 www.VBsemi.com g A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 ID = 2.5 A - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) ID = 2 A 0.01 10 300.1 Power (W) Time (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 10-3 10-2 1 10 60010-110-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM ME3502 www.VBsemi.com g A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Output Characteristics On-Resistance vs. Drain Current 0 1234 5 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 10 V thru 7 V

2 V 3 V

0.0 0.06 0.07 0.08 0.09 0.1 0.2 01234567 RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V - On-Resistance (Ω) Transfer Characteristics Capacitance 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = - 55 °C 125 °C 25 °C 120 180 240 300 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss ME3502 www.VBsemi.com g A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 012345 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 15 V ID = 1.8 A 1.2 1.5 0.1 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA Variance (V)VGS(th) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 5 50 75 100 125 150 VGS = 10 V ID = 1.8 A TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) 0.0 0.06 0.07 0.08 0.09 0.1 0.2 02468 1 0 VGS - Gate-to-Source Voltage (V) - On-Resistance (Ω)RDS(on) ID = 1.8 A ID = 1 A 0.01 10 300.1 Power (W) Time (s) ME3502 www.VBsemi.com g A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 10-3 10-2 1 10 60010-110-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance ME3502 www.VBsemi.com g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 ME3502 www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) ME3502 www.VBsemi.com g A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. ME3502 www.VBsemi.com A ll data sheet.com