ME2602

ME2602 VBSEMI | Alldatasheet

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• Halogen-free According to IEC 612 49-2-21 Definition  TrenchFET ® Power MOSFETs  175 °C Maximum Junction Tempera ture  Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 100 0.100 at VGS = 10 V 5.0 0.120 at VGS = 4.5 V 4.5 Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unle ss otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 100 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)a TA = 25 °C ID 5.0 4.5 ATA = 70 °C 3.5 3.0 Pulsed Drain Current IDM 25 Avalanche Current IAS 15 Single Pulse Avalanche Energy EAS 11 mJ Maximum Po wer Dissipationa TA = 25 °C PD 3.3 1.7 WTA = 70 °C 2.3 1.2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum J unction-to-Ambient a t ≤ 10 s RthJA 36 45 °C/WSteady State 75 90 Maximum Junction-to-F oot (Drain) Steady State RthJF 17 20 N-Channel MOSFET G D S SOT-223 G D S D N-Channel 100-V (D-S) MOSFET ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. P ulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, un less otherwise noted Paramet er Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate Threshold Vo ltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V , VGS = 0 V, TJ = 55 °C 20 On-State Drain Currenta ID(on) V DS ≥ 5 V , VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6.0 A Ω VGS = 10 V, ID = 4.0 A, TJ = 125 °C 0.110 VGS = 10 V, ID = 4.0 A, TJ = 175 °C 0.140 VGS = 4.5 V, ID = 3.1 A 0.120 Forward Transconductancea gfs VDS = 15 V, ID = 4.0 A 25 S Diode Forwar d Voltagea VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 4.0 A 18 27 nCGate-Source Charge Qgs 3.4 Gate-Drain Charge Qgd 5.3 Gate Resistan ce Rg VGS = 0.1 V, f = 5 MHz 0.5 1.4 2. 4 Ω Tur n-On Delay Time td(on) VDD = 50 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 10 20 ns Rise Time tr 10 20 Turn-Off Delay T ime td(off) 25 50 Fall Ti me tf 12 24 Source-Drain Reve rse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 50 80 Output Characteristics 3.0 VGS = 10 V thru 5 V 4 V 2 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 012345 - 55 °C 25 °C ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 150 °C 1.5 3 0.122 ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C, unless otherwise noted On-Resistance vs. Dra in Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 8 16 24 32 40 VGS = 4.5 V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 10 V 04 8 12 16 20 ID = 6.0 V VDS = 30 V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) 2.0 2.5 0.00 0.5 1.0 1.5 TJ = 25 °CTJ = 175 °C IS - Source Current (A) VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Jun ction Temperature On-Resistance vs. Gate-to-Source Voltage 300 600 900 1200 1500 1800 2100 C rss Coss Ciss C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 6.0 A RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246 8 10 ID = 6.0 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 15 30 45 60 75 90 ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 1.2 - 0.8 - 0.4 0.0 0.4 0.8 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA VGS(th) Variance (V) TJ - Temperature (°C) Single Pulse Power 0.01 10 10000.1 Time (s) )W( r ewo P 100 Normalized Therma l Transient Impedance, Junction-to-Ambient 10-3 10 -2 11 0 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) evi t c e ff E d e z i l a m r oN t n e i s n a r T e c n a d e p m I l a m r e h T 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) evitceff E d e z i l a m r oN t n e i s n a r T e c n a d e p m I l a m r e h T ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

SOT-223 (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. D B 0.10 (0.004) M C M H 0.10 (0.004) M C B M 0.20 (0.008) M C A M 0.10 (0.004) M C B M 3 x B e 1 2 3 A E C A 0.08 (0.003) θ 4 x L 4 x C MILLIMETERS INCHES DIM. MIN. MAX . MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 - 0.036 - L1 0.061 BSC 0.0024 BSC θ - 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. ME2602 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com