ME25N06

ME25N06 VBSEMI | Alldatasheet

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• TrenchFET ® Power MOSFET  175 °C Jun c tion Temperature PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a 0.025 at VGS = 10 V 35 0.030 at VGS = 4.5 V 30 TO-252 SGD Top View Drain Connected to Tab N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol L imit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C ID A TC = 100 °C 28 Pulsed Drain Current IDM 100 Continuous Source Current (Diode Conductio n) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ Maximum P ower Dissipation TC = 25 °C PD 100 WTA = 25 °C 3a Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 sec RthJA 18 22 °C/WSteady State 40 50 Maximum Junction-to-Case RthJC 3.2 4 Available RoHS* COMPLIANT N-Channel 6 0-V (D-S) MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unle ss otherwise noted Parameter Symb ol T est Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.0 3.0 Gate-Body Lea kage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) V DS = 5 V, VGS = 10 V 50 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 15 A 0.025 0.031 Ω VGS = 10 V, ID = 15 A, TJ = 125 °C 0.055 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.069 VGS = 4.5 V, ID = 10 A 0.030 0.045 Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 20 S Dynamica Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 670 pFOutput Capacitance Coss 140 Reverse Transfe r Capacitance Crss 60 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 23 A 11 1 7 nCGate-S ource Chargec Qgs 3 Gate-Drain Chargec Qgd 3 Tur n-On Delay Timec td(on) VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 81 5 nsRise Timec tr 15 25 Turn-Off Dela y Timec td(off) 30 45 Fall T imec tf 25 40 Source-Drain Diode Rating s and Characteristics (TC = 25 °C) Pulsed Current ISM 50 A Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V Reve rse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com

S 25 °C unless noted Output Characteristics Tra nsconductance Capacitance 100 0 2468 1 0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 10 thru 6 V 4 V 5 V 3 V 0 5 10 15 20 25 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 200 400 600 800 1000 0 1 02 03 0 4 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Ciss Coss Transfer Characteristics On-Resistan ce vs. Drain Current Gate Charge 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 25 °C - 55 °C TC = 125 °C 0.00 0.02 0.04 0.06 0.08 0.10 0 1 02 03 04 0 5 0 - On-Resistance (Ω) ID - Drain Current (A) rDS(on) VGS = 4.5 V VGS = 10 V 02468 1 0 1 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS VDS = 30 V ID = 23 A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C unless noted On-Resistance vs. Junction Te mperature r DS ( on) - On-Resistance (Normalized) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction T emperature ( °C) V GS = 10 V I D = 15 A Source-Drain Dio de Forward Voltage - Source Current (A)I S VSD - Source-to-Drain Voltage (V) 100 TJ = 25 °CTJ = 150 °C www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com

vs. Amb ient Temperature 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C - Drain Current (A)I D Safe Operating Area VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified - Drain Current (A)I D 100 0.1 0.1 1 10 100 TC = 25 °C Single Pulse 1 ms 10 ms 100 ms dc *rDS(on) Limited 10 µs 100 µs Normalized Thermal Transien t Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 ME25N06 A ll data sheet.com