MCR100-8 SEMIWELL | Alldatasheet
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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. 2. Gate 1. Cathode Symbol SemiWell Semiconductor Sensitive Gate Silicon Controlled Rectifiers TO-92 1 2 3 3. Anode Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C 200 VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.2 1.7 V IGT Gate Trigger Current (2) VAK = 6 V, RL=100 Ω TC = 25 °C TC = - 40 °C 200 500 VGT Gate Trigger Voltage (2) VD = 7 V, RL=100 Ω TC = 25 °C TC = - 40 °C 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage VD = 0.67 VDRM , Exponential waveform, RGK = 1000Ω TJ = 125 °C 500 800 ─ V/㎲ di/dt Critical Rate of Rise On-State Current ITM = 2A ; Ig = 10mA ── 50 A/㎲ IH Holding Current VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C 5.0 mA Rth(j-c) Thermal Impedance Junction to case ── 60 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 150 °C/W MCR100-8 ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement.
-50 0 50 100 150 0.1 IGT(t o IGT(25 o Junction Temperature[ o Rθ (J-C) Transient Thermal Impedance [ o C/W] Time (sec) 125 o C o C On-State Current [A] On-State Voltage [V] 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] IGM(1A) VGD(0.2V) PG(AV)(0.1W) PGM(2W) VGM(5V) o C Gate Voltage [V] Gate Current [mA] MCR100-8 Fig 2. Maximum Case T emperature θ : Conduction Angle 360° θ 2ππ Fig 3. Typical Forward Voltage Fig 4. Thermal Response Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 1. Gate Characteristics -50 0 50 100 150 0.1 VGT(t o VGT(25 o Junction Temperature[ o
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 θ = 180 o θ = 120 o θ = 90 o θ = 60 o θ = 30 o Max. Average Power Dissipation [W] Average On-State Current [A] -50 0 50 100 150 0.1 IH(t o IH(25 o Junction Temperature[ o MCR100-8 Fig 7. Typical Holding Current Fig 8. Power Dissipation
Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 1. Cathode 2. Gate 3. Anode A B C G E F D MCR100-8 H J I