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Technical content

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 K A G

FEATURES

 Repetitive Peak Off-State Voltage: 600V  R.M.S On–State Current (IT(RMS) = 1A)  Low Gate Trigger Current: 200uA

Applications

Leakage detector, Electronic Ballast or protection circuit. General Description Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detection circuits. MCR100-8 Silicon Controlled Rectifier VDRM = 600 V IT(RMS) = 1 A ITSM = 11 A IGT = 200uA TO-92 Symbol Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit VDRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 V VRRM Repetitive Peak Reverse Voltage 600 V IT(AV) Average On-State Current Full sine wave, TC = 80.4oC 0.64 A IT(RMS) R.M.S. On-State Current 1 A ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 10/11 A I2t Fusing Current t = 10ms 0.5 A2S PGM Forward Peak Gate Power Dissipation TJ = 125 °C, pulse width ≤ 1.0us 2 W PG(AV) Forward Average Gate Power Dissipation TJ = 125 °C, t = 8.3ms 0.1 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 1.0us 1 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 1.0us 5 V TJ Operating Junction Temperature -40~+125 oC TSTG Storage Temperature -40~+150 oC

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 Thermal Characteristics Electrical Characteristics (TC=25℃ unless otherwise specified ) Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Symbol Parameter Conditions Min Typ Max Unit IDRM Repetitive Peak Off-State Current VD = VDRM TC=25oC - - 50 uA TC=125oC - - 5 mA IRRM Repetitive Peak Reverse Current VD = VDRM TC=25oC - - 50 uA TC=125oC - - 5 mA IGT Gate Trigger Current VD = 12V, RL=330Ω - - 200 uA VGT Gate Trigger Voltage VD = 12V, RL=330Ω - - 1.0 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 1.4A, IG = 5mA - 1.2 1.6 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 10 - - V/us IH Holding current IT= 0.2A - - 2 mA Symbol Parameter Conditions Min Typ Max Unit RθJC Thermal Resistance Junction to Case 56 oC/W RθJA Thermal Resistance Junction to Ambient 150 oC/W

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 Junction temperature, TJ[ o X 100(%)VGT(t o VGT(25 o 1 10 100 50Hz 60Hz Surge on state current, ITSM [A] Time [cycles] 1 10 100 1000 0.1 25[ o PG(AV)(0.1W) PGM(2W) VGD Gate voltage, VG [V] Gate current, IG [mA] 100 110 120 130 180 o150 o 120 o90 o o o Maximum allowable case temperature, TC [ o Average on state current, IT(AV) [A] 0.0 0.2 0.4 0.6 0.8 1.0 180 o 150 o 120 o o o o Power dissipation, PD [W] Average on-state current, IT(AV) [A] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 X 100(%) IGT(t o IGT(25 o Junction temperature, TJ [ o Typical Characteristics Fig 1. Average Current vs. Power dissipation Fig 2. Average current vs. Case Temperature Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 0.1 125 o C Instantaneous on state current, IT[A] Instantaneous on state voltage, VT[V] o C Thermal impedance [ o C/W] Pulse Time [sec] Typical Characteristics Fig 7. Instantaneous on state current vs. Instantaneous on state voltage Fig 8. Thermal Impedance vs. pulse time Measurement of gate trigger current Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. RS=0.167Ω VTO=1.05V RG RL VD VG

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 Package Dimension 4.58±0.25 3.71±0.2 0.46±0.1 1.27typ 1.27typ 1.02±0.1 3.71±0.25 3.6±0.25 4.58±0.2514.47±0.5 TO-92 BULK

◎ SEMIHOW REV.A0,March 2012 MCR100- 8 H P P2F1 F2 P1 W0 W2 W Item Symbol Dimension [mm] Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 Lead pitch FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 27.0 max Tape feed hole diameter D0 4.0 ±0.2 TO-92 TAPING Package Dimension