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◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary  Variable frequency operation  Low Start-up Current(Typ.100uA )  Pulse by Pulse Current Limiting  Over Current Protection  Over Voltage Protection (Min. 20)  Internal Thermal Shutdown Function  Under Voltage Lockout  Internal High Voltage Sense FET  Auto-Restart Mode  Frequency Modulation for low EMI  Advanced Burst-Mode Operation

FEATURES

VER : Preliminary ( SEMIHOW POWER SWITCH ) DEC 2009 APPLICATION  SMPS for STB, SVR, DVD & DVCD  SMPS for Printer, Facsimile & Scanner  Adaptor The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter

DESCRIPTION

◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 650 V ID Drain Current – Continuous (TC = 25℃) 3.0 A Drain Current – Continuous (TC = 100℃) 2.4 A VGD Gate - source Voltage ±30 V IDM Drain Current – Pulsed (Note 1) 12 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 358 mJ VCC(MAX) Maximum Supply voltage 20 V VFB Analog Input Voltage Range -0.3 To VSD V PD Power Dissipation (TC = 25℃) - Derate above 25℃ 75 W

0.6 W/℃

TJ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃ SPGP0365A SPGN0365A Symbol Parameter Value Units VDSS Drain-Source Voltage 650 V ID Drain Current – Continuous (TC = 25℃) 0.42 A Drain Current – Continuous (TC = 100℃) 0.28 A VGD Gate - source Voltage ±30 V IDM Drain Current – Pulsed (Note 1) 3 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 127 mJ VCC(MAX) Maximum Supply voltage 20 V VFB Analog Input Voltage Range -0.3 To VSD V PD Power Dissipation (TC = 25℃) - Derate above 25℃ 1.56 W

0.0125 W/℃

TJ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃

◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Symbol Parameter Test Conditions Min Typ Max Units RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A -- 3.6 4.5 Ω On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 ㎂ 650 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 50 ㎂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 950 1230 ㎊ Coss Output Capacitance -- 550 710 ㎊ Crss Reverse Transfer Capacitance -- 120 155 ㎊ Dynamic Characteristics td(on) Turn-On Time VDS = 325 V, ID = 1 A, RG = 25 Ω (Note 4,5) -- 18 -- ㎱ Tr Turn-On Rise Time -- 12 -- ㎱ td(off) Turn-Off Delay Time -- 80 -- ㎱ tf Turn-Off Fall Time -- 22 -- ㎱ Qg Total Gate Charge VDS = 325V, ID = 1 A, VGS = 10 V (Note 4,5) -- 13 17 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Switching Characteristics Electrical Characteristics ( SenseFet Part ) TC=25 °C unless otherwise specified

◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Notes ; 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process Symbol Parameter Test Conditions Min Typ Max Units VSTART Start Threshold Voltage VFB = GND 14 15 16 V VSTOP Stop Threshold Voltage VFB = GND 8.4 9 9.6 V UVLO Section FOSC Initial Accuracy 57 64 71 KHz -- Frequency Change With Temperature (Note 2) -25°C ≤ Ta ≤ +85°C -- ±5 ±10 % DMAX Maximum Duty Cycle 73 77 82 % Oscillator Section IFB Feedback Source Current Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA VSD Shutdown Feedback Voltage Vfb>6.5V 5.4 6 6.6 V Idelay Shutdown Delay Current Ta=25°C, 5VδVfbδVSD 4 5 6 mA FEEDBACK Section Reference Section Electrical Characteristics ( Control Part ) TC=25 °C unless otherwise specified VREF Reference Output Voltage (Note 1) Ta=25°C 4.8 5 5.2 V Vref/∆T Temperature Stability (Note 1 , 2) -25°C ≤ Ta ≤ +85°C -- 0.3 0.6 mV/°C IOVER Peak Current Limit Max. inductor current 1.62 2.0 2.38 A Protection Section VOVP Over Voltage Protection VCC > 20V 20 -- 23 V TSD Thermal Shutdown Temperature Protection Section ISTART Start-up Current VCC = 14V -- 100 170 µΑ IOP Operating Supply Current (Control Part Only) V CC < 20V -- 3 6 mA

Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000 Ciss = Cgs + Cgd (Cds = shorted)

◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary Package Dimension

◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPGN0365A/SPGP0365A-Preliminary