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◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K BVDSS = 80 V RDS(on) typ = 3 mΩ ID = 180 A

FEATURES

80V N-Channel Trench MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 190nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested Jan 2015 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 80 V ID Drain Current – Continuous (TC = 25℃) 180 A Drain Current – Continuous (TC = 100℃) 126 A IDM Drain Current – Pulsed (Note 1) 630 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 1400 mJ EAR Repetitive Avalanche Energy (Note 1) 25 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 250 W

1.67 W/℃

TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 0.6 ℃/W RθJA Junction-to-Ambient -- 40 1.Gate 2. Drain 3. Source TO-220

◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 180 A ISM Pulsed Source-Drain Diode Forward Current -- -- 630 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 80 -- ㎱ Qrr Reverse Recovery Charge -- 120 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 80 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 8100 -- ㎊ Coss Output Capacitance -- 1100 -- ㎊ Crss Reverse Transfer Capacitance -- 720 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 2.3 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 40 V, ID = 30 A, RG = 6 Ω -- 90 -- ㎱ tr Turn-On Rise Time -- 130 -- ㎱ td(off) Turn-Off Delay Time -- 260 -- ㎱ tf Turn-Off Fall Time -- 100 -- ㎱ Qg Total Gate Charge VDS = 64 V, ID = 30 A, VGS = 10 V -- 190 -- nC Qgs Gate-Source Charge -- 30 -- nC Qgd Gate-Drain Charge -- 75 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 3.6 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- 3.0 4.0 mΩ gFS Forward Transconductance VDS = 20, ID = 40 A -- 100 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=35A, VDD=45V, RG=25Ω, Starting TJ =25°C

◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D

◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K Package Dimension 9.19±0.20 φ3.60 ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ TO-220 (A)

◎ SEMIHOW REV.A0,Jan 2015 HRP40N08K ±0.20 2.74±0.20 0.81±0.20 1.27±0.20 1.27±0.20 4.57±0.20 0.40±0.20 2.67±0.20 9.14±0.20 φ3.84 ±0.20 2.54typ 2.54typ TO-220 (B) Package Dimension