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Technical content
Variable frequency operation Low Start-up Current(Typ.100uA ) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 20) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Frequency Modulation for low EMI Advanced Burst-Mode Operation
FEATURES
( SEMIHOW POWER SWITCH ) May 2013 APPLICATION SMPS for STB, SVR, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter
DESCRIPTION
Symbol Parameter Value Units VDSS Drain-Source Voltage 800 9 ID Drain Current – Continuous (TC = 25ఁ͚͑ 2.0 $ Drain Current – Continuous (TC = 100ఁ͚͑ 1.3 $ IDM Drain Current – Pulsed (Note 1) 8 $ VGS Gate-Source Voltage ρ30 9 EAS Single Pulsed Avalanche Energy (Note 2) 68 P- VCC(MAX) Maximum Supply voltage 20 9 VFB Analog Input Voltage Range -0.3 To V SD 9 PD Power Dissipation (TC = 25ଇ) - Derate above 25ଇ 42 : 0.33 :ഒ TJ Operating Junction Temperature +160 ഒ TA Operating Ambient Temperature -25 to +85 ഒ TSTG Storage Temperature Range -55 to +150 ഒ Absolute Maximum Ratings Ta=25qC, unless otherwise specified Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=51mH, IAS=2.0A , VDD=50V, RG=25:, Starting TJ =25qC
Notes : 1. Pulse Test : Pulse Width ȝV'XW\\&\\FOH Symbol Parameter Test Conditions Min Typ Max Units RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.0 A͑ -- 5.0 6.0 വ On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 ᒺ 650 -- -- 9 IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V͑ -- -- 50 ᒺ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz͑ -- 320 420 ᓂ Coss Output Capacitance -- 40 55 ᓂ Crss Reverse Transfer Capacitance -- 8.5 11.0 ᓂ Dynamic Characteristics td(on) Turn-On Time VDS = 325 V, ID = 2.0 A, RG = 25 വ -- 20 -- ᓩ Tr Turn-On Rise Time -- 25 -- ᓩ td(off) Turn-Off Delay Time -- 40 -- ᓩ tf Turn-Off Fall Time -- 30 -- ᓩ Qg Total Gate Charge VDS = 325V, ID = 2.0 A, VGS = 10 V -- 9.0 12.0 Q& Qgs Gate-Source Charge -- 2.3 -- Q& Qgd Gate-Drain Charge -- 3.5 -- Q& Switching Characteristics Electrical Characteristics ( SenseFET Part ) Ta=25qC, unless otherwise specified RS 1
Notes : 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process Symbol Parameter Test Conditions Min Typ Max Units VSTART Start Threshold Voltage VFB = GND͑ 14 15 16 9 VSTOP Stop Threshold Voltage VFB = GND͑ 8.4 9 9.6 9 UVLO Section FOSC Initial Accuracy 57 64 71 .+] -- Frequency Change With Temperature (Note 2) -25πCdTa d+85πC -- r5 r10 DMAX Maximum Duty Cycle 73 77 82 Oscillator Section IFB Feedback Source Current Ta=25πC, 0V<Vfb<3V͑ 0.7 0.9 1.1 P$ VSD Shutdown Feedback Voltage Vfb>6.5V͑ 5.4 6 6.6 9 Idelay Shutdown Delay Current Ta=25πC, 5VGVfbGVSD͑ 45 6 P$ FEEDBACK Section Reference Section Electrical Characteristics ( Control Part ) Ta=25qC, unless otherwise specified VREF Reference Output Voltage (Note 1) Ta=25πC͑ 4.8 5 5.2 9 Vref/'T Temperature Stability (Note 1 , 2) -25πCdTa d+85πC -- 0.3 0.6 mV/ πC IOVER Peak Current Limit Max. inductor current 1.05 1.2 1.34 $ Protection Section VOVP Over Voltage Protection VCC !20V͑ 20 -- 23 9 TSD Thermal Shutdown Temperature (Tj) (Note 1) -- 140 160 -- πC Protection Section ISTART Start-up Current VCC = 14V͑ -- 100 170 P$ IOP Operating Supply Current (Control Part Only) VCC20V͑ -- 3 6 P$
SPGP0265APackage Dimension